III−V Nanowire Growth Mechanism:  V/III Ratio and Temperature Effects

Shadi A. Dayeh, Edward T. Yu,* and Deli Wang*
Department of Electrical and Computer Engineering, University of CaliforniaSan Diego, La Jolla, California 92093
Nano Lett., 2007, 7 (8), pp 2486–2490
DOI: 10.1021/nl0712668
Publication Date (Web): July 4, 2007
Copyright © 2007 American Chemical Society
*

 Corresponding author. E-mail:  ety@ece.ucsd.edu (E.T.Y.); dwang@ ece.ucsd.edu (D.W.).

Abstract

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We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III−V NW growth, support the general validity of the vapor−liquid−solid growth mechanism for III−V NWs, and improve rational control over their growth morphology.

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History

  • Published In Issue August 08, 2007
  • Received May 29, 2007

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