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Graphene Nanostrip Digital Memory Device

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Daniel Gunlycke,*^† Denis A. Areshkin,^‡ Junwen Li,^§ John W. Mintmire,^§ and Carter T. White*^†

Naval Research Laboratory, Washington, District of Columbia 20375, George Washington University, Washington, District of Columbia 20052, and Oklahoma State University, Stillwater, Oklahoma 74078

Nano Lett., 2007, 7 (12), pp 3608–3611

DOI: 10.1021/nl0717917

Publication Date (Web): November 16, 2007

Section:

Electric Phenomena

Abstract

In equilibrium, graphene nanostrips, with hydrogens sp²-bonded to carbons along their zigzag edges, are expected to exhibit a spin-polarized ground state. However, in the presence of a ballistic current, we find that there exists a voltage range over which both spin-polarized and spin-unpolarized nanostrip states are stable. These states can represent a bit in a binary memory device that could be switched through the applied bias and read by measuring the current through the nanostrip.

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This article has been cited by 7 ACS Journal articles (5 most recent appear below).

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Graphene Epitaxy by Chemical Vapor Deposition on SiC
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  Abstract | Full Text HTML | Hi-Res PDF | PDF w/ Links
Edges Bring New Dimension to Graphene Nanoribbons
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  Abstract | Full Text HTML | Hi-Res PDF | PDF w/ Links
Conductance Anisotropy in Epitaxial Graphene Sheets Generated by Substrate Interactions
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  Michael K. Yakes, Daniel Gunlycke, Joseph L. Tedesco, Paul M. Campbell, Rachael L. Myers-Ward, Charles R. Eddy, Jr., D. Kurt Gaskill, Paul E. Sheehan and Arnaldo R. Laracuente
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Graphene Terahertz Generators for Molecular Circuits and Sensors
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The Journal of Physical Chemistry A2008 112 (51), 13699-13705
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  Abstract | Full Text HTML | Hi-Res PDF | PDF w/ Links