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Growth of Straight, Atomically Perfect, Highly Metallic Silicon Nanowires with Chiral Asymmetry
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Section:Abstract
In the quest of nano-objects for future electronics, silicon nanowires could possibly take over carbon nanotubes. Here we show the growth by self-organization of straight, massively parallel silicon nanowires having a width of 1.6 nm, which are atomically perfect and highly metallic conductors. Surprisingly, these silicon nanowires display a strong symmetry breaking across their widths with two chiral species that self-assemble in large left-handed and right-handed magnetic-like domains.
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This article has been cited by 5 ACS Journal articles (5 most recent appear below).
Atomic Structure and Energetic Stability of Complex Chiral Silicon Nanowires
Pavel V. Avramov, Soma Minami, Stephan Irle, Leonid A. Chernozatonskii and Keiji MorokumaThe Journal of Physical Chemistry C2010 114 (35), 14692-14696Atomic Structure and Energetic Stability of Complex Chiral Silicon Nanowires
Pavel V. Avramov, Soma Minami, Stephan Irle, Leonid A. Chernozatonskii and Keiji MorokumaThe Journal of Physical Chemistry C2010 114 (35), 14692-14696Atomic and electronic structure and energetic stability of newly proposed pentagonal and hexagonal chiral complex silicon nanowires (NWs) composed of five or six
110
oriented crystalline fragments were studied using the ab initio DFT method. The ...
Defect Formation in Ga-Catalyzed Silicon Nanowires
Sònia Conesa-Boj, Ilaria Zardo, Sònia Estradé, Li Wei, Pierre Jean Alet, Pere Roca i Cabarrocas, Joan R. Morante, Francesca Peiró, Anna Fontcuberta i Morral and Jordi ArbiolCrystal Growth & Design2010 10 (4), 1534-1543Defect Formation in Ga-Catalyzed Silicon Nanowires
Sònia Conesa-Boj, Ilaria Zardo, Sònia Estradé, Li Wei, Pierre Jean Alet, Pere Roca i Cabarrocas, Joan R. Morante, Francesca Peiró, Anna Fontcuberta i Morral and Jordi ArbiolCrystal Growth & Design2010 10 (4), 1534-1543The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution ...
Synthesis of Glycal-Based Chiral Benzimidazoles by VO(acac)2−CeCl3 Combo Catalyst and Their Self-Aggregated Nanostructured Materials
Dilip K. Maiti, Samiran Halder, Palash Pandit, Nirbhik Chatterjee, Dripta De Joarder, Nabyendu Pramanik, Yasmin Saima, Amarendra Patra and Prabir K. MaitiThe Journal of Organic Chemistry2009 74 (21), 8086-8097Synthesis of Glycal-Based Chiral Benzimidazoles by VO(acac)2−CeCl3 Combo Catalyst and Their Self-Aggregated Nanostructured Materials
Dilip K. Maiti, Samiran Halder, Palash Pandit, Nirbhik Chatterjee, Dripta De Joarder, Nabyendu Pramanik, Yasmin Saima, Amarendra Patra and Prabir K. MaitiThe Journal of Organic Chemistry2009 74 (21), 8086-8097VO(acac)2−CeCl3 combo catalyst has been developed for chemoselective cyclocondensation cum oxidation under mild reaction conditions toward synthesis of a new class of optically pure compounds, 2-(2′-C-3′,4′,6′-tri-O-benzyl/methyl-glycal)-1H-...
Burning Match Oxidation Process of Silicon Nanowires Screened at the Atomic Scale
Paola De Padova, Christel Leandri, Sebastien Vizzini, Claudio Quaresima, Paolo Perfetti, Bruno Olivieri, Hamid Oughaddou, Bernard Aufray and Guy Le LayNano Letters2008 8 (8), 2299-2304Burning Match Oxidation Process of Silicon Nanowires Screened at the Atomic Scale
Paola De Padova, Christel Leandri, Sebastien Vizzini, Claudio Quaresima, Paolo Perfetti, Bruno Olivieri, Hamid Oughaddou, Bernard Aufray and Guy Le LayNano Letters2008 8 (8), 2299-2304Silicon oxide nanowires hold great promise for functional nanoscale electronics. Here, we investigate the oxidation of straight, massively parallel, metallic Si nanowires. We show that the oxidation process starts at the Si NW terminations and develops ...
Atomistic Design of Thermoelectric Properties of Silicon Nanowires
Trinh T.M. Vo, Andrew J. Williamson and Vincenzo Lordi, Giulia GalliNano Letters2008 8 (4), 1111-1114Atomistic Design of Thermoelectric Properties of Silicon Nanowires
Trinh T.M. Vo, Andrew J. Williamson and Vincenzo Lordi, Giulia GalliNano Letters2008 8 (4), 1111-1114We present predictions of the thermoelectric figure of merit (ZT) of Si nanowires with diameter up to 3 nm, based upon the Boltzman transport equation and ab initio electronic structure calculations. We find that ZT depends significantly on the wire ...
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History
- Published In Issue January 09, 2008
- Received October 8, 2007
Revised Manuscript Received November 30, 2007
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1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit ...
