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Letter

Significant Enhancement of Hole Mobility in [110] Silicon Nanowires Compared to Electrons and Bulk Silicon

A. K. Buin,*^† A. Verma,^‡ A. Svizhenko,^§ and M. P. Anantram^†

Nanotechnology Program, University of Waterloo, 200 University Avenue West, Ontario N2T 1P8, Canada, Department of Electrical Engineering, Texas A&M UniversityKingsville, Texas 78363, and Silvaco Data Systems Inc., 4701 Patrick Henry Drive, Santa Clara, California 95054

Nano Lett., 2008, 8 (2), pp 760–765

DOI: 10.1021/nl0727314

Publication Date (Web): January 19, 2008

Copyright © 2008 American Chemical Society

*

To whom correspondence should be addressed. E-mail: abuin@ ecemail.uwaterloo.ca.

,

†

University of Waterloo.

,

‡

Texas A&M University−Kingsville.

,

§

Silvaco Data Systems Inc.

Abstract

Abstract Image

Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm²/V s, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed those of similar diameter [100] SiNWs, with nearly 2 orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along the [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.

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History

Published In Issue February 13, 2008
Received October 22, 2007
Revised Manuscript Received December 19, 2007

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