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Letter

Enhanced Ferromagnetic Stability in Cu Doped Passivated GaN Nanowires

H. J. Xiang* and Su-Huai Wei

National Renewable Energy Laboratory, Golden, Colorado 80401

Nano Lett., 2008, 8 (7), pp 1825–1829

DOI: 10.1021/nl080261n

Publication Date (Web): June 7, 2008

* Corresponding author.

Abstract

Density functional calculations are performed to investigate the room temperature ferromagnetism in GaN:Cu nanowires (NWs). Our results indicate that two Cu dopants are most stable when they are near each other. Compared with bulk GaN:Cu, we find that magnetization and ferromagnetism in Cu doped NWs are strongly enhanced because the bandwidth of the Cu t_d band is reduced because of the one-dimensional nature of the NW. The surface passivation is shown to be crucial to sustain the ferromagnetism in GaN:Cu NWs. These findings are in good agreement with experimental observations and indicate that ferromagnetism in this type of systems can be tuned by controlling the size or shape of the host materials.

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Published In Issue July 09, 2008
Article ASAPJune 07, 2008
Received: January 27, 2008
Revised: March 31, 2008

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Letter

Enhanced Ferromagnetic Stability in Cu Doped Passivated GaN Nanowires

Abstract

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Recommend & Share

Related Content

Room-Temperature Ferromagnetism in Cu Doped GaN Nanowires

General Control of Transition-Metal-Doped GaN Nanowire Growth: Toward Understanding the Mechanism of Dopant Incorporation

Observation of Unintentionally Incorporated Nitrogen-Related Complexes in ZnO and GaN Nanowires

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