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Letter

Crystallographic Etching of Few-Layer Graphene

Sujit S. Datta^†, Douglas R. Strachan*^†^‡, Samuel M. Khamis^† and A. T. Charlie Johnson*^†^‡

Department of Physics and Astronomy, and Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104

Nano Lett., 2008, 8 (7), pp 1912–1915

DOI: 10.1021/nl080583r

Publication Date (Web): June 21, 2008

†

Department of Physics and Astronomy.

* Corresponding author. E-mail: drstrach@sas.upenn.edu (D.S.) and cjohnson@physics.upenn.edu (C.J.).

‡

Department of Materials Science and Engineering.

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

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History

Published In Issue July 09, 2008
Article ASAPJune 21, 2008
Received: February 27, 2008
Revised: June 09, 2008

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Letter

Crystallographic Etching of Few-Layer Graphene