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Graphene Epitaxy by Chemical Vapor Deposition on SiC

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W. Strupinski*1, K. Grodecki12, A. Wysmolek2, R. Stepniewski2, T. Szkopek3, P. E. Gaskell3, A. Grüneis45, D. Haberer4, R. Bozek2, J. Krupka6, and J. M. Baranowski12

¹ Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland

² Faculty of Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland

³ Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, H3A-2A7, Canada

⁴ IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany

⁵ University of Vienna, Strudlhofgasse 4, 1090 Wien, Austria

⁶ Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

Nano Lett., 2011, 11 (4), pp 1786–1791

DOI: 10.1021/nl200390e

Publication Date (Web): March 25, 2011

*E-mail: wlodek.strupinski@itme.edu.pl.

Section:

Crystallography and Liquid Crystals

Abstract

We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades.(1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of 1800 cm²/(V s) and enables the controlled synthesis of a determined number of graphene layers with a defined doping level. The high quality of graphene is evidenced by a unique combination of angle-resolved photoemission spectroscopy, Raman spectroscopy, transport measurements, scanning tunneling microscopy and ellipsometry. Our measurements indicate that CVD grown graphene is under less compressive strain than its epitaxial counterpart and confirms the existence of an electronic energy band gap. These features are essential for future applications of graphene electronics based on wafer scale graphene growth.

Keywords:

Graphene; epitaxy; CVD; sublimation; SiC; carbon deposition

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