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Letter

Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs

Supporting Info

Liangti Qu, Feng Du and Liming Dai*

Department of Chemical and Materials Engineering, School of Engineering, University of Dayton, 300 College Park, Dayton, Ohio 45469

Nano Lett., 2008, 8 (9), pp 2682–2687

DOI: 10.1021/nl800967n

Publication Date (Web): July 30, 2008

* Corresponding author. E-mail: ldai@udayton.edu.

Abstract

We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.

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Published In Issue September 10, 2008
Article ASAPJuly 30, 2008
Received: April 04, 2008
Revised: June 08, 2008

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Letter

Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs

Abstract

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SciFinder Links

History

Recommend & Share

Related Content

Selective Growth of Well-Aligned Semiconducting Single-Walled Carbon Nanotubes

Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Selective Synthesis Combined with Chemical Separation of Single-Walled Carbon Nanotubes for Chirality Selection

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