Tunable Graphene Single Electron Transistor

C. Stampfer*, E. Schurtenberger, F. Molitor, J. Gttinger, T. Ihn and K. Ensslin
Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
Nano Lett., 2008, 8 (8), pp 2378–2383
DOI: 10.1021/nl801225h
Publication Date (Web): July 22, 2008
Copyright © 2008 American Chemical Society
* Corresponding author, stampfer@phys.ethz.ch.

Abstract

Abstract Image

We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions, and for the Coulomb blockade resonances. From Coulomb diamond measurements in different device configurations (i.e., barrier configurations) we extract a charging energy of ≈3.4 meV and estimate a characteristic energy scale for the constriction resonances of ≈10 meV.

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History

  • Published In Issue August 13, 2008
  • Article ASAPJuly 22, 2008
  • Received: April 30, 2008

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