Intrinsic Response of Graphene Vapor Sensors

Yaping Dan, Ye Lu, Nicholas J. Kybert§, Zhengtang Luo and A. T. Charlie Johnson*
Department of Electrical and Systems Engineering, Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, and Department of Physics, University of Warwick, Coventry, CV4 7AL, U.K.
Nano Lett., 2009, 9 (4), pp 1472–1475
DOI: 10.1021/nl8033637
Publication Date (Web): March 6, 2009
Copyright © 2009 American Chemical Society
* To whom correspondence should be addressed. E-mail: cjohnson@physics.upenn.edu., †

Department of Electrical and Systems Engineering, University of Pennsylvania.

, ‡

Department of Physics and Astronomy, University of Pennsylvania.

, §

University of Warwick.

Abstract

Abstract Image

Graphene is a two-dimensional material with extremely favorable chemical sensor properties. Conventional nanolithography typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristics has not yet been determined. Here we show that the contamination layer chemically dopes the graphene, enhances carrier scattering, and acts as an absorbent layer that concentrates analyte molecules at the graphene surface, thereby enhancing the sensor response. We demonstrate a cleaning process that verifiably removes the contamination on the device structure and allows the intrinsic chemical responses of the graphene monolayer to be measured. These intrinsic responses are surprisingly small, even upon exposure to strong analytes such as ammonia vapor.

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History

  • Published In Issue April 08, 2009
  • Article ASAPMarch 06, 2009
  • Received: November 06, 2008
    Revised: February 02, 2009

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