Prev. Article Next Article Table of Contents

Letter

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Figures

Your current credentials do not allow retrieval of the full text.

Purchase the full-text

PDF/HTML,
figures/images,
references and tables,
(where available)

Kuan Yen Tan*†, Kok Wai Chan†, Mikko Möttönen†‡§, Andrea Morello†, Changyi Yang

, Jessica van Donkelaar

, Andrew Alves

, Juha-Matti Pirkkalainen†‡, David N. Jamieson

, Robert G. Clark† and Andrew S. Dzurak†

^† Centre of Excellence for Quantum Computer Technology, School of Electrical Engineering and Telecommunications, University of New South Wales, Sydney NSW 2052, Australia

^‡ Department of Applied Physics/COMP, Helsinki University of Technology, P.O. Box 5100, FI-02015 TKK, Finland

^§ Low Temperature Laboratory, Helsinki University of Technology, P.O. Box 3500, FI-02015 TKK, Finland

Centre of Excellence for Quantum Computer Technology, School of Physics, University of Melbourne, Melbourne VIC 3010, Australia

Nano Lett., 2010, 10 (1), pp 11–15

DOI: 10.1021/nl901635j

Publication Date (Web): December 1, 2009

* To whom correspondence should be addressed. E-mail: kuan-yen@student.unsw.edu.au.

Section:

Electric Phenomena

Abstract

We have developed nanoscale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Landé g-factors are consistent with expectations for donors in gated nanostructures.

View: Full Text HTML | Hi-Res PDF | PDF w/ Links