Transfer-Free Batch Fabrication of Single Layer Graphene Transistors

Mark P. Levendorf†§, Carlos S. Ruiz-Vargas‡§, Shivank Garg† and Jiwoong Park*†
Department of Chemistry and Chemical Biology, School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853
Nano Lett., Article ASAP
DOI: 10.1021/nl902790r
Publication Date (Web): October 27, 2009
Copyright © 2009 American Chemical Society
* To whom correspondence should be addressed. E-mail: jpark@cornell.edu., †

Department of Chemistry and Chemical Biology.

, ‡

School of Applied and Engineering Physics.

, §

These authors contributed equally to this work.

Abstract

Abstract Image

Full integration of graphene into conventional device circuitry would require a reproducible large scale graphene synthesis that is compatible with conventional thin film technology. We report the synthesis of large scale single layer graphene directly onto an evaporated copper film. A novel fabrication method was used to directly pattern these graphene sheets into devices by simply removing the underlying copper film. Raman and conductance measurements show that the mechanical and electrical properties of our single layer graphene are uniform over a large area, (Ferrari, A. C. et al. Phys. Rev. Lett. 2006, 97, 187401.) which leads to a high device yield and successful fabrication of ultra long (>0.5 mm) graphene channels. Our graphene based devices present excellent electrical properties including a promising carrier mobility of 700 cm2/V·s and current saturation characteristics similar to devices based on exfoliated graphene (Meric, I.. et al. Nat Nanotechnol. 2008, 3, 654−659).

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History

  • Received: August 25, 2009
    Revised: October 7, 2009

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