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Critical Growth Rate of Hydrate Crystal Growth Inhibitors in the Low Growth Rate Region

  • Michihiro Muraoka*
    Michihiro Muraoka
    Energy Process Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Onogawa, Tsukuba, Ibaraki 305-8569, Japan
    *Email: [email protected]. Tel: +81 29 861 2841. Fax: + 81 29 861 8765.
  • Malcolm A. Kelland
    Malcolm A. Kelland
    Department of Chemistry, Bioscience and Environmental Engineering, Faculty of Science and Technology, University of Stavanger, N-4036 Stavanger, Norway
  • Yoshitaka Yamamoto
    Yoshitaka Yamamoto
    Energy Process Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Onogawa, Tsukuba, Ibaraki 305-8569, Japan
  • , and 
  • Kiyofumi Suzuki
    Kiyofumi Suzuki
    Energy Process Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Cite this: Cryst. Growth Des. 2021, 21, 9, 4979–4985
Publication Date (Web):July 27, 2021
https://doi.org/10.1021/acs.cgd.1c00421
Copyright © 2021 American Chemical Society

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    Abstract

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    We tested poly(N-vinylpyrrolidone) (PVP) K-12, K-15, K-30, K-90, poly(N-vinylcaprolactam) (PVCap), tetrapentylammonium bromide (TPeAB), tetrabutylammonium bromide (TBPB), polyacryloylpyrrolidine (PAP), poly(N-isopropylmethacrylamide) (PNIPMAM), and hyperbranched polyesteramide (PEA) as hydrate crystal growth inhibitors (HCGIs). We used a tetrahydrofuran (THF) sII hydrate system using a unidirectional growth apparatus. The HCGI concentration c = 0.5 wt % and the growth rate V ranged from 0.005 to 10 μm s–1. The growth rates of TPeAB, PVP K-12, K-15, TBPB, and PEA were found to be critical in the region of a low growth rate with the degree of supercooling ΔT approaching 0. However, PVP K-30, K-90, PAP, PNIPMAM, and PVCap remained effective at V = 0.005 μm s–1. These results enhance the persuasiveness for the model that the HCGI effect is explained by the residence time on the crystal surface of HCGI, τ, and time interval t* required to increase the interface curvature. In addition, we determined the threshold growth rate of THF hydrate for examining HCGI performance on sII gas hydrate. Thus, when 0.005 ≤ critical growth rate V* < 0.01 μm s–1, the HCGIs are moderate inhibitors on sII gas hydrate. When V* < 0.005 μm s–1, the HCGIs are strong inhibitors on sII gas hydrate.

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