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    p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
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    • Ekaterine Chikoidze*
      Ekaterine Chikoidze
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
      *Email for E.C.: [email protected]
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      Orcidhttp://orcid.org/0000-0002-6566-4639
    • Corinne Sartel
      Corinne Sartel
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
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    • Ismail Madaci
      Ismail Madaci
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
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    • Hagar Mohamed
      Hagar Mohamed
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
      Solid State Physics Department, National Research Center, El-Behooth Street 12311 Dokki, Giza, Egypt
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    • Christele Vilar
      Christele Vilar
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
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    • Belén Ballesteros
      Belén Ballesteros
      Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain
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      Orcidhttp://orcid.org/0000-0002-1958-8911
    • Francisco Belarre
      Francisco Belarre
      Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain
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    • Elena del Corro
      Elena del Corro
      Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain
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    • Pablo Vales-Castro
      Pablo Vales-Castro
      Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain
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    • Guillaume Sauthier
      Guillaume Sauthier
      Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain
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    • Lijie Li
      Lijie Li
      College of Engineering, Swansea University, Bay Campus, Fabian Way, Crymlyn Burrows, Swansea SA1 8EN, U.K.
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      Orcidhttp://orcid.org/0000-0003-4630-7692
    • Mike Jennings
      Mike Jennings
      College of Engineering, Swansea University, Bay Campus, Fabian Way, Crymlyn Burrows, Swansea SA1 8EN, U.K.
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    • Vincent Sallet
      Vincent Sallet
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
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      Orcidhttp://orcid.org/0000-0003-0949-8397
    • Yves Dumont
      Yves Dumont
      Groupe d’Etude de la Matière Condensée (GEMaC), Université de Versailles Saint Quentin en Y- CNRS, Université Paris-Saclay, 45 Av. des Etats-Unis, 78035 Versailles Cedex, France
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    • Amador Pérez-Tomás*
      Amador Pérez-Tomás
      Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Barcelona, Spain
      *Email for A.P.-T.: [email protected]
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    Crystal Growth & Design

    Cite this: Cryst. Growth Des. 2020, 20, 4, 2535–2546
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    https://doi.org/10.1021/acs.cgd.9b01669
    Published March 6, 2020
    Copyright © 2020 American Chemical Society
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    Abstract

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    The family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic β-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 1015 cm–3, while hole mobilities were found to be μh = 7–10 cm2/(V s) (in the 680–850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics.

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    Cite this: Cryst. Growth Des. 2020, 20, 4, 2535–2546
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