Epitaxial Electrodeposition of Optically Transparent Hole-Conducting CuI on n-Si(111)Click to copy article linkArticle link copied!
- Avishek BanikAvishek BanikDepartment of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, United StatesMore by Avishek Banik
- John Z. TubbesingJohn Z. TubbesingDepartment of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, United StatesMore by John Z. Tubbesing
- Bin LuoBin LuoDepartment of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, United StatesMore by Bin Luo
- Xiaoting ZhangXiaoting ZhangDepartment of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, United StatesMore by Xiaoting Zhang
- Jay A. Switzer*Jay A. Switzer*Email: [email protected]Department of Chemistry and Graduate Center for Materials Research, Missouri University of Science and Technology, Rolla, Missouri 65409-1170, United StatesMore by Jay A. Switzer
Abstract
The expansion of future optoelectronic materials into transparent flexible electronics, perovskite, organic, and tandem photovoltaics depends on the development of high-performance p-type materials with optical transparency. We introduce the epitaxial growth of γ-CuI, a wide band gap p-type semiconductor with the zinc blende structure, on single crystalline Si(111) using a simple, cost-effective, room-temperature electrochemical method. The deposited epitaxial film grows with a high degree of in-plane and out-of-plane order, templated by the Si(111) substrate. A deposition mechanism is proposed, in which epitaxial CuI seed crystals are nucleated on the freshly etched n-Si(111) surface, followed by the simultaneous oxidation of Si to form a thin layer of SiOx and the lateral overgrowth of the CuI seeds into a continuous film. The rectifying p-CuI/SiOx/n-Si heterojunction diode shows an ideality factor of 1.5, a built-in voltage of 0.67 V, and a barrier height of 0.91 eV. The epitaxial CuI film has been epitaxially lifted off by chemical etching to produce textured CuI foils with an out-of-plane and in-plane order that mimics that of single crystals.
Cited By
Smart citations by scite.ai include citation statements extracted from the full text of the citing article. The number of the statements may be higher than the number of citations provided by ACS Publications if one paper cites another multiple times or lower if scite has not yet processed some of the citing articles.
This article is cited by 7 publications.
- Jay A. Switzer, Avishek Banik. Epitaxial Electrodeposition of Ordered Inorganic Materials. Accounts of Chemical Research 2023, 56
(13)
, 1710-1719. https://doi.org/10.1021/acs.accounts.3c00007
- Xiaoting Zhang, Bin Luo, Avishek Banik, John Z. Tubbesing, Jay A. Switzer. Epitaxial Single-Domain Cu-BTC Metal–Organic Framework Thin Films and Foils by Electrochemical Conversion of Cuprous Oxide. ACS Applied Materials & Interfaces 2023, 15
(14)
, 18440-18449. https://doi.org/10.1021/acsami.2c22983
- Jiang Luo, Guodong Ren, Brandon M. Campbell, Dongyan Zhang, Tengfei Cao, Rohan Mishra, Bryce Sadtler. Spontaneous Seed Formation during Electrodeposition Drives Epitaxial Growth of Metastable Bismuth Selenide Microcrystals. Journal of the American Chemical Society 2022, 144
(40)
, 18272-18285. https://doi.org/10.1021/jacs.2c05261
- Bin Luo, Avishek Banik, Eric W. Bohannan, Jay A. Switzer. Epitaxial Electrodeposition of Hole Transport CuSCN Nanorods on Au(111) at the Wafer Scale and Lift-off to Produce Flexible and Transparent Foils. Chemistry of Materials 2022, 34
(3)
, 970-978. https://doi.org/10.1021/acs.chemmater.1c02694
- Chong Wu, Xueping Zhao, Qing Wang, Hai Zhang, Pucun Bai. Domain epitaxial matching of γ-CuI film grown on Al2O3(001) substrate via physical vapor transport. APL Materials 2024, 12
(10)
https://doi.org/10.1063/5.0231188
- Bin Luo, Xiaoting Zhang, John Z. Tubbesing, Avishek Banik, Jay A. Switzer. Epitaxial Electrodeposition of Wide Bandgap Cuprous Bromide on Silver via a Silver Bromide Buffer Layer. Journal of The Electrochemical Society 2022, 169
(9)
, 092512. https://doi.org/10.1149/1945-7111/ac8eeb
- Sandra Ruiz-Gómez, Claudia Fernández-González, Lucas Perez. Electrodeposition as a Tool for Nanostructuring Magnetic Materials. Micromachines 2022, 13
(8)
, 1223. https://doi.org/10.3390/mi13081223
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.