Double Doping of a Low-Ionization-Energy Polythiophene with a Molybdenum Dithiolene ComplexClick to copy article linkArticle link copied!
- Emmy JärsvallEmmy JärsvallDepartment of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, SwedenMore by Emmy Järsvall
- Till BiskupTill BiskupPhysical Chemistry, University of Saarland, Saarbrücken 66123, GermanyMore by Till Biskup
- Yadong ZhangYadong ZhangGeorgia Institute of Technology, School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332-0400, United StatesRenewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United StatesMore by Yadong Zhang
- Renee KroonRenee KroonDepartment of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, SwedenLaboratory of Organic Electronics, Linköping University, 60174 Norrköping, SwedenMore by Renee Kroon
- Stephen BarlowStephen BarlowGeorgia Institute of Technology, School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332-0400, United StatesRenewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United StatesMore by Stephen Barlow
- Seth R. MarderSeth R. MarderGeorgia Institute of Technology, School of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332-0400, United StatesRenewable and Sustainable Energy Institute, University of Colorado Boulder, Boulder, Colorado 80303, United StatesDepartments of Chemical and Biological Engineering and of Chemistry, University of Colorado Boulder, Boulder, Colorado 80303, United StatesMore by Seth R. Marder
- Christian Müller*Christian Müller*Email: [email protected]Department of Chemistry and Chemical Engineering, Chalmers University of Technology, 41296 Göteborg, SwedenMore by Christian Müller
Abstract
Doping of organic semiconductors is crucial for tuning the charge-carrier density of conjugated polymers. The exchange of more than one electron between a monomeric dopant and an organic semiconductor allows the polaron density to be increased relative to the number of counterions that are introduced into the host matrix. Here, a molybdenum dithiolene complex with a high electron affinity of 5.5 eV is shown to accept two electrons from a polythiophene that has a low ionization energy of 4.7 eV. Double p-doping is consistent with the ability of the monoanion salt of the molybdenum dithiolene complex to dope the polymer. The transfer of two electrons to the neutral dopant was also confirmed by electron paramagnetic resonance spectroscopy since the monoanion, but not the dianion, of the molybdenum dithiolene complex features an unpaired electron. Double doping allowed an ionization efficiency of 200% to be reached, which facilitates the design of strongly doped semiconductors while lessening any counterion-induced disruption of the nanostructure.
This publication is licensed under
License Summary*
You are free to share(copy and redistribute) this article in any medium or format and to adapt(remix, transform, and build upon) the material for any purpose, even commercially within the parameters below:
Creative Commons (CC): This is a Creative Commons license.
Attribution (BY): Credit must be given to the creator.
*Disclaimer
This summary highlights only some of the key features and terms of the actual license. It is not a license and has no legal value. Carefully review the actual license before using these materials.
License Summary*
You are free to share(copy and redistribute) this article in any medium or format and to adapt(remix, transform, and build upon) the material for any purpose, even commercially within the parameters below:
Creative Commons (CC): This is a Creative Commons license.
Attribution (BY): Credit must be given to the creator.
*Disclaimer
This summary highlights only some of the key features and terms of the actual license. It is not a license and has no legal value. Carefully review the actual license before using these materials.
License Summary*
You are free to share(copy and redistribute) this article in any medium or format and to adapt(remix, transform, and build upon) the material for any purpose, even commercially within the parameters below:
Creative Commons (CC): This is a Creative Commons license.
Attribution (BY): Credit must be given to the creator.
*Disclaimer
This summary highlights only some of the key features and terms of the actual license. It is not a license and has no legal value. Carefully review the actual license before using these materials.
Introduction
Results and Discussion
mol % dopant | Oox (%) | ηion (%) | Np (1026 m–3) | σ (S cm–1) | μ (cm2 V–1 s–1) |
---|---|---|---|---|---|
5 | 3.4 ± 0.2 | 195 ± 3 | 0.94 ± 0.02 | 0.05 ± 0.01 | 0.003 ± 0.001 |
10 | 7.4 | 200a | 2.0 | 1.1 ± 0.1 | 0.03 ± 0.01 |
20 | 13.1 ± 0.2 | 158 ± 2.3 | 3.6 ± 0.1 | 15 ± 1 | 0.26 ± 0.04 |
For 10 mol % dopant, the calculated value of ηion was larger than physically possible and therefore was set to 200%.
Conclusions
Experimental Section
Materials
Sample Preparation
UV–vis–NIR Absorption Spectroscopy
Electron Paramagnetic Resonance
Electrical Characterization
Supporting Information
The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.2c01040.
UV–vis–NIR spectra as well as angular-dependent and nonsmoothed EPR spectra (PDF)
Terms & Conditions
Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.
Acknowledgments
The authors acknowledge funding from the Swedish Research Council through grant agreement no. 2018-03824 and the National Science Foundation through a DMREF award, DMR-1729737.
References
This article references 38 other publications.
- 1Organic Flexible Electronics: Fundamentals, Devices, and Applications, 1st ed.; Cosseddu, P.; Caironi, M., Eds.; Woodhead Publishing: Duxford, UK, 2021.Google ScholarThere is no corresponding record for this reference.
- 2Simon, D. T.; Gabrielsson, E. O.; Tybrandt, K.; Berggren, M. Organic Bioelectronics: Bridging the Signaling Gap between Biology and Technology. Chem. Rev. 2016, 116, 13009– 13041, DOI: 10.1021/acs.chemrev.6b00146Google Scholar2https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtVyrur7I&md5=57086c8309a7d360d24fb813f44cb03fOrganic Bioelectronics: Bridging the Signaling Gap between Biology and TechnologySimon, Daniel T.; Gabrielsson, Erik O.; Tybrandt, Klas; Berggren, MagnusChemical Reviews (Washington, DC, United States) (2016), 116 (21), 13009-13041CODEN: CHREAY; ISSN:0009-2665. (American Chemical Society)A review. The electronics in people's daily lives rely almost exclusively on electrons as the dominant charge carrier. In stark contrast, biol. systems rarely use electrons but rather use ions and mols. of varying size. Due to the unique combination of both electronic and ionic/mol. cond. in conducting and semiconducting org. polymers and small mols., these materials have emerged in recent decades as excellent tools for translating signals between these two realms and, therefore, providing a means to effectively interface biol. with conventional electronics, thus, the field of org. bioelectronics. Today, org. bioelectronics defines a generic platform with unprecedented biol. recording and regulation tools and is maturing toward applications ranging from life sciences to the clinic. In this Review, the authors introduce the field, from its early breakthroughs to its current results and future challenges.
- 3Lüssem, B.; Riede, M.; Leo, K. Doping of organic semiconductors. Phys. Status Solidi A 2013, 210, 9– 43, DOI: 10.1002/pssa.201228310Google Scholar3https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC38XhvVyrtLbN&md5=3028d24bf630eae80c6ca787ab64e41bDoping of organic semiconductorsLuessem, B.; Riede, M.; Leo, K.Physica Status Solidi A: Applications and Materials Science (2013), 210 (1), 9-43CODEN: PSSABA; ISSN:1862-6300. (Wiley-VCH Verlag GmbH & Co. KGaA)A review. The understanding and applications of org. semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small org. LED (OLED) displays; other areas of application such as OLED lighting and org. photovoltaics are on the verge of broad commercialization. Org. semiconductors are superior to inorg. ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, elec. doping of org. semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorg. semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evapd. org. layers with mol. dopants. Recently, both p- and n-type mol. dopants have been developed that lead to efficient and stable doping of org. thin films. Due to doping, the cond. of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between org. layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and org. solar cells is highlighted in this review. Overall, controlled mol. doping can be considered as key enabling technol. for many different org. device types that can lead to significant improvements in efficiencies and lifetimes.
- 4Jacobs, I. E.; Moulé, A. J. Controlling molecular doping in organic semiconductors. Adv. Mater. 2017, 29, 1703063 DOI: 10.1002/adma.201703063Google ScholarThere is no corresponding record for this reference.
- 5Scaccabarozzi, A. D.; Basu, A.; Aniés, F.; Liu, J.; Zapata-Arteaga, O.; Warren, R.; Firdaus, Y.; Nugraha, M. I.; Lin, Y.; Campoy-Quiles, M.; Koch, N.; Müller, C.; Tsetseris, L.; Heeney, M.; Anthopoulos, T. D. Doping Approaches for Organic Semiconductors. Chem. Rev. 2022, 122, 4420– 4492, DOI: 10.1021/acs.chemrev.1c00581Google Scholar5https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3MXisFSgtLjJ&md5=1785c05b2620a3f751b0559c1865797aDoping Approaches for Organic SemiconductorsScaccabarozzi, Alberto D.; Basu, Aniruddha; Anies, Filip; Liu, Jian; Zapata-Arteaga, Osnat; Warren, Ross; Firdaus, Yuliar; Nugraha, Mohamad Insan; Lin, Yuanbao; Campoy-Quiles, Mariano; Koch, Norbert; Muller, Christian; Tsetseris, Leonidas; Heeney, Martin; Anthopoulos, Thomas D.Chemical Reviews (Washington, DC, United States) (2022), 122 (4), 4420-4492CODEN: CHREAY; ISSN:0009-2665. (American Chemical Society)A review. Electronic doping in org. materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for org. materials with high elec. cond., paving the way for the pioneering work on pristine org. semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of org. electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of org. semiconductors and their applications. We first review the relevant literature with particular focus on the phys. processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chem. strategies toward the synthesis of mols. with improved functionality. The processing routes toward doped org. films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various org. devices.
- 6Li, J.; Duchemin, I.; Roscioni, O. M.; Friederich, P.; Anderson, M.; Da Como, E.; Kociok-Köhn, G.; Wenzel, W.; Zannoni, C.; Beljonne, D.; Blase, X.; D’Avino, G. Host dependence of the electron affinity of molecular dopants. Mater. Horiz. 2019, 6, 107– 114, DOI: 10.1039/C8MH00921JGoogle Scholar6https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXhvVejurzO&md5=93fc9d3dcb28a274fdda67ff8ce4a8ceHost dependence of the electron affinity of molecular dopantsLi, Jing; Duchemin, Ivan; Roscioni, Otello Maria; Friederich, Pascal; Anderson, Marie; Da Como, Enrico; Kociok-Kohn, Gabriele; Wenzel, Wolfgang; Zannoni, Claudio; Beljonne, David; Blase, Xavier; D'Avino, GabrieleMaterials Horizons (2019), 6 (1), 107-114CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)Charge carriers energetics is key in electron transfer processes such as those that enable the elec. doping of org. semiconductors. In this study, we take advantage of the quant. accuracy of embedded GW calcns. to perform a series of virtual expts. that allow measuring the electron affinity of p-type dopants in different host solids. Our calcns. show that the energy levels of a mol. impurity strongly depend on the host environment as a result of electrostatic intermol. interactions. In particular, the electron affinity of a dopant impurity in a given semiconductor is found to be up to 1 eV lower than that of the pure dopant crystal. This result questions the pertinence of the electron affinity measured for pure dopants in order to predict doping efficiency in a specific host. The role of the Coulomb electron-hole interaction for the dopant-to-semiconductor charge transfer and for the release of doping-induced charges is discussed.
- 7Salzmann, I.; Heimel, G.; Oehzelt, M.; Winkler, S.; Koch, N. Molecular electrical doping of organic semiconductors: fundamental mechanisms and emerging dopant design rules. Acc. Chem. Res. 2016, 49, 370– 378, DOI: 10.1021/acs.accounts.5b00438Google Scholar7https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XitFSjsrY%253D&md5=cc3b2014b0e798e89fa0f673aa011c7dMolecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design RulesSalzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, NorbertAccounts of Chemical Research (2016), 49 (3), 370-378CODEN: ACHRE4; ISSN:0001-4842. (American Chemical Society)A review. Today's information society depends on the authors' ability to controllably dope inorg. semiconductors, such as silicon, thereby tuning their elec. properties to application-specific demands. For optoelectronic devices, org. semiconductors, i.e., conjugated polymers and mols., have emerged as s superior alternative owing to the ease of tuning their optical gap through chem. variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of mol. elec. doping for improving the performance of, for example, org. light-emitting devices or org. solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of mol. doping in org. semiconductors are only little understood compared with their inorg. counterparts. .Here, the authors review the broad range of phenomena obsd. upon molecularly doping org. semiconductors and identify two distinctly different scenarios: the pairwise formation of both org. semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between org. semiconductor and dopant through supramol. hybridization of their resp. frontier MOs on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed from the characteristic and strikingly different signatures of the individual species involved in the resp. doping processes in a variety of spectroscopic techniques. The crit. importance of a statistical view of doping, rather than a bimol. picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorg. and org. semiconductors to be their resp. d. of electronic states and the doping induced changes thereof. Engineering the d. of states of doped org. semiconductors, the Fermi-Dirac occupation of which ultimately dets. the doping efficiency, thus emerges as key challenge. As a 1st step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant mols. as an addnl. design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, resp. In an extended outlook, the authors finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixt. of dopant mols. to org. semiconductors does affect the d. of states: compared with their inorg. counterparts, traps for charge carriers are omnipresent in org. semiconductors due to structural and chem. imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in org. semiconductors owing to their lower dielec. const. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and mols. Once completed, such a picture will provide viable guidelines for synthetic and supramol. chem. that will enable further technol. advances in org. and hybrid org./inorg. devices.
- 8Nell, B.; Ortstein, K.; Boltalina, O. V.; Vandewal, K. Influence of dopant–host energy level offset on thermoelectric properties of doped organic semiconductors. J. Phys. Chem. C 2018, 122, 11730– 11735, DOI: 10.1021/acs.jpcc.8b03804Google Scholar8https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXptlyju7o%253D&md5=a665fe8b25ef7c15a9d82d8840e3752bInfluence of dopant-host energy level offset on thermoelectric properties of doped organic semiconductorsNell, Bernhard; Ortstein, Katrin; Boltalina, Olga V.; Vandewal, KoenJournal of Physical Chemistry C (2018), 122 (22), 11730-11735CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)Increasing the amt. of charge carriers by mol. doping is important to improve the function of several org. electronic devices. In this work, the authors use highly fluorinated fullerene (C60F48) to p-type dope common amorphous mol. host materials. They observe a general relation between the material's elec. cond. and Seebeck coeff., both strongly depending on the energy level offset between the amorphous host and the dopant. This suggests that the doping efficiency at similar doping levels is mainly detd. by the electron transfer yield from host to dopant. Indeed, the dopant anion and host cation absorption strength correlate with the ionization energy (IE) of the host material. Host materials with an IE significantly below the electron affinity of the dopant yield the highest doping efficiency. Surprisingly, the doping efficiency reduces only by about 1 order of magnitude when the IE of the host material is increased by 0.55 eV, which they attribute to the disordered nature of the host materials.
- 9Euvrard, J.; Revaux, A.; Bayle, P.-A.; Bardet, M.; Vuillaume, D.; Kahn, A. The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration. Org. Electron. 2018, 53, 135– 140, DOI: 10.1016/j.orgel.2017.11.020Google Scholar9https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXhvV2qsLnF&md5=2ed763a7e6ecd26eff1f7ea43d3188b1The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentrationEuvrard, Julie; Revaux, Amelie; Bayle, Pierre-Alain; Bardet, Michel; Vuillaume, Dominique; Kahn, AntoineOrganic Electronics (2018), 53 (), 135-140CODEN: OERLAU; ISSN:1566-1199. (Elsevier B.V.)The polymer Poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b)dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl] (PBDTTT-c) p-doped with the mol. dopant tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concns., which limits the performance attainable through org. semiconductor doping. SEM is used to correlate the evolution of hole cond. and hopping transport activation energy with the formation of aggregates in the layer. Transmission Electron Microscopy with energy-dispersive X-ray anal. along with liq.-state NMR expts. are carried out to det. the compn. of the aggregates. This study offers an explanation to the limited efficiency of doping at high dopant concns. and reinforces the need to increase doping efficiency in order to be able to reduce the dopant concn. and not neg. affect cond.
- 10Duong, D. T.; Wang, C.; Antono, E.; Toney, M. F.; Salleo, A. The chemical and structural origin of efficient p-type doping in P3HT. Org. Electron. 2013, 14, 1330– 1336, DOI: 10.1016/j.orgel.2013.02.028Google Scholar10https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXmt1Clsr8%253D&md5=dbe1ccee73b6e2e48528dfd1b29d2623The chemical and structural origin of efficient p-type doping in P3HTDuong, Duc T.; Wang, Chenchen; Antono, Erin; Toney, Michael F.; Salleo, AlbertoOrganic Electronics (2013), 14 (5), 1330-1336CODEN: OERLAU; ISSN:1566-1199. (Elsevier B.V.)We investigate the chem. and structural properties of soln.-processed thin films of P3HT blended with p-type dopant F4TCNQ. The max. in-plane elec. cond. of doped films is obsd. at a molar doping fraction of 0.17, in agreement with the binding mechanism of F4TCNQ:P3HT complexes. Through the use of X-ray diffraction, a previously unreported cryst. phase is obsd. for P3HT films doped above a crit. threshold concn. This cryst. phase involves the incorporation of F4TCNQ mols. into ordered polymer regions and ultimately improves charge dissocn., leading to higher carrier d. in thin film. Finally, optical absorption and X-ray diffraction reveal that the chem. state of P3HT in soln. has a dramatic impact on the elec. and structural properties of the blended films.
- 11Dixon, A. L.; Vezin, H.; Nguyen, T.-Q.; Reddy, G. N. M. Structural insights into Lewis acid- and F4TCNQ-doped conjugated polymers by solid-state magnetic resonance spectroscopy. Mater. Horiz. 2022, 9, 981– 990, DOI: 10.1039/D1MH01574EGoogle Scholar11https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB38Xislyruw%253D%253D&md5=2b5536c04d37fbe501f3fe322f9fbca7Structural insights into Lewis acid- and F4TCNQ-doped conjugated polymers by solid-state magnetic resonance spectroscopyDixon, Alana L.; Vezin, Herve; Nguyen, Thuc-Quyen; Reddy, G. N. ManjunathaMaterials Horizons (2022), 9 (3), 981-990CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)Mol. doping strategies facilitate orders of magnitude enhancement in the charge carrier mobility of org. semiconductors (OSCs). Understanding the different doping mechanisms and mol.-level constraints on doping efficiency related to the material energy levels is crucial to develop versatile dopants for OSCs. Given the compositional and structural heterogeneities assocd. with OSC thin films, insight into dopant-polymer interactions by long-range techniques such as X-ray scattering and electron microscopy is exceedingly challenging to obtain. This study employs short-range probes, solid-state (ss) NMR and EPR spectroscopy, to resolve local structures and intermol. interactions between dopants such as F4TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane), Lewis acid BCF (tris[pentafluorophenyl] borane) and Lewis base conjugated polymer, PCPDTBT (P4) (poly[2,6-(4,4-bis(2-hexadecyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]). Anal. of 1H and 13C ssNMR spectra of P4, P4 : F4TCNQ and P4 : BCF blends indicates that the addn. of dopants induces local structural changes in the P4 polymer, and causes paramagnetism-induced signal broadening and intensity losses. The hyperfine interactions in P4 : BCF and P4 : F4TCNQ are characterized by two-dimensional pulsed EPR spectroscopy. For P4 : F4TCNQ, 19F ssNMR anal. indicates that the F4TCNQ mols. are distributed and aggregated into different local chem. environments.
- 12Kiefer, D.; Kroon, R.; Hofmann, A. I.; Sun, H.; Liu, X.; Giovannitti, A.; Stegerer, D.; Cano, A.; Hynynen, J.; Yu, L.; Zhang, Y.; Nai, D.; Harrelson, T. F.; Sommer, M.; Moulé, A. J.; Kemerink, M.; Marder, S. R.; McCulloch, I.; Fahlman, M.; Fabiano, S.; Müller, C. Double doping of conjugated polymers with monomer molecular dopants. Nat. Mater. 2019, 18, 149– 155, DOI: 10.1038/s41563-018-0263-6Google Scholar12https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1MXmt1Oktbs%253D&md5=f3b09a943b9edecf64ef493a17f35ba3Double doping of conjugated polymers with monomer molecular dopantsKiefer, David; Kroon, Renee; Hofmann, Anna I.; Sun, Hengda; Liu, Xianjie; Giovannitti, Alexander; Stegerer, Dominik; Cano, Alexander; Hynynen, Jonna; Yu, Liyang; Zhang, Yadong; Nai, Dingqi; Harrelson, Thomas F.; Sommer, Michael; Moule, Adam J.; Kemerink, Martijn; Marder, Seth R.; McCulloch, Iain; Fahlman, Mats; Fabiano, Simone; Muller, ChristianNature Materials (2019), 18 (2), 149-155CODEN: NMAACR; ISSN:1476-1122. (Nature Research)Mol. doping is a crucial tool for controlling the charge-carrier concn. in org. semiconductors. Each dopant mol. is commonly thought to give rise to only one polaron, leading to a max. of one donor:acceptor charge-transfer complex and hence an ionization efficiency of 100%. However, this theor. limit is rarely achieved because of incomplete charge transfer and the presence of unreacted dopant. Here, we establish that common p-dopants can in fact accept two electrons per mol. from conjugated polymers with a low ionization energy. Each dopant mol. participates in two charge-transfer events, leading to the formation of dopant dianions and an ionization efficiency of up to 200%. Furthermore, we show that the resulting integer charge-transfer complex can dissoc. with an efficiency of up to 170%. The concept of double doping introduced here may allow the dopant fraction required to optimize charge conduction to be halved.
- 13Goel, M.; Siegert, M.; Krauss, G.; Mohanraj, J.; Hochgesang, A.; Heinrich, D. C.; Fried, M.; Pflaum, J.; Thelakkat, M. HOMO–HOMO electron transfer: An elegant strategy for p-type doping of polymer semiconductors toward thermoelectric applications. Adv. Mater. 2020, 32, 2003596 DOI: 10.1002/adma.202003596Google Scholar13https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXhvVKgtrnI&md5=876167efc0f58974212d37ef0110fa16HOMO-HOMO Electron Transfer: An Elegant Strategy for p-Type Doping of Polymer Semiconductors toward Thermoelectric ApplicationsGoel, Mahima; Siegert, Marie; Krauss, Gert; Mohanraj, John; Hochgesang, Adrian; Heinrich, David C.; Fried, Martina; Pflaum, Jens; Thelakkat, MukundanAdvanced Materials (Weinheim, Germany) (2020), 32 (43), 2003596CODEN: ADVMEW; ISSN:0935-9648. (Wiley-VCH Verlag GmbH & Co. KGaA)Unlike the conventional p-doping of org. semiconductors (OSCs) using acceptors, here, an efficient doping concept for diketopyrrolopyrrole-based polymer PDPP[T]2-EDOT (OSC-1) is presented using an oxidized p-type semiconductor, Spiro-OMeTAD(TFSI)2 (OSC-2), exploiting electron transfer from HOMOOSC-1 to HOMOOSC-2. A shift of work function toward the HOMOOSC-1 upon doping is confirmed by UPS. Detailed XPS and UV-vis-NIR absorption studies confirm HOMOOSC-1 to HOMOOSC-2 electron transfer. The redn. products of Spiro-OMeTAD(TFSI)2 to Spiro-OMeTAD(TFSI)2 and Spiro-OMeTAD is also confirmed and their relative amts. in doped samples is detd. Mott-Schottky anal. shows two orders of magnitude increase in free charge carrier d. and one order of magnitude increase in the charge carrier mobility. The cond. increases considerably by four orders of magnitude to a max. of 10 S m-1 for a very low doping ratio of 8 mol%. The doped polymer films exhibit high thermal and ambient stability resulting in a max. power factor of 0.07μW m-1 K-2 at a Seebeck coeff. of 140μV K-1 for a very low doping ratio of 4 mol%. Also, the concept of HOMOOSC-1 to HOMOOSC-2 electron transfer is a highly efficient, stable and generic way to p-dope other conjugated polymers.
- 14Krauss, G.; Hochgesang, A.; Mohanraj, J.; Thelakkat, M. Highly Efficient Doping of Conjugated Polymers Using Multielectron Acceptor Salts. Macromol. Rapid Commun. 2021, 42, 2100443 DOI: 10.1002/marc.202100443Google Scholar14https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3MXitlWntL7N&md5=5705cbc1e4040e4d8056c51a0860a43cHighly Efficient Doping of Conjugated Polymers Using Multielectron Acceptor SaltsKrauss, Gert; Hochgesang, Adrian; Mohanraj, John; Thelakkat, MukundanMacromolecular Rapid Communications (2021), 42 (22), 2100443CODEN: MRCOE3; ISSN:1022-1336. (Wiley-VCH Verlag GmbH & Co. KGaA)Chem. doping is a vital tool for tuning electronic properties of conjugated polymers. Most single electron acceptors used for p-doping necessitate high dopant concns. to achieve good elec. cond. However, high-molar doping ratios hamper doping efficiency. Here a new concept of using multielectron acceptor (MEA) salts as dopants for conjugated polymers is presented. Two novel MEA salts are synthesized and their doping efficiency to toward two polymers differing in their dielec. properties are compared with two single electron acceptors such as NOPF6 and magic blue. Cutting-edge methods such as UPS/XPS, impedance spectroscopy, and d. of states anal. in addn. to UV-vis-NIR absorption, spectroelectrochem., and Raman spectroscopy methods are used to characterize the doped systems. The tetracation salt improves the cond. by two orders of magnitude and quadruples the charge carrier concn. compared to single electron acceptors for the same molar ratio. The differences in charge carrier d. and activation energy on doping are delineated. Further, a strong dependency of the carrier release on the polymer polarity is obsd. High carrier densities at reduced dopant loadings and improved doping efficacies using MEA dopants offer a highly efficient doping strategy for conjugated polymers.
- 15Paniagua, S. A.; Baltazar, J.; Sojoudi, H.; Mohapatra, S. K.; Zhang, S.; Henderson, C. L.; Graham, S.; Barlow, S.; Marder, S. R. Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal–organic species. Mater. Horiz. 2014, 1, 111– 115, DOI: 10.1039/C3MH00035DGoogle Scholar15https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvVShsbrO&md5=04a92aad248993ed5ec2c436060abd60Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal-organic speciesPaniagua, Sergio A.; Baltazar, Jose; Sojoudi, Hossein; Mohapatra, Swagat K.; Zhang, Siyuan; Henderson, Clifford L.; Graham, Samuel; Barlow, Stephen; Marder, Seth R.Materials Horizons (2014), 1 (1), 111-115CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)CVD graphene has been n- and p-doped using redox-active, soln.-processed metal-org. complexes. Elec. measurements, photoemission spectroscopies, and Raman spectroscopy were used to characterize the doped films and give insights into the changes. The work function decreased by as much as 1.3 eV with the n-dopant, with contributions from electron transfer and surface dipole, and the cond. significantly increased.
- 16Mohapatra, S. K.; Zhang, Y.; Sandhu, B.; Fonari, M. S.; Timofeeva, T. V.; Marder, S. R.; Barlow, S. Synthesis, characterization, and crystal structures of molybdenum complexes of unsymmetrical electron-poor dithiolene ligands. Polyhedron 2016, 116, 88– 95, DOI: 10.1016/j.poly.2016.04.025Google Scholar16https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XmvFyjtLw%253D&md5=9d72fafaa35554b0ab8ea2fe669913e1Synthesis, characterization, and crystal structures of molybdenum complexes of unsymmetrical electron-poor dithiolene ligandsMohapatra, Swagat K.; Zhang, Yadong; Sandhu, Bhupinder; Fonari, Marina S.; Timofeeva, Tatiana V.; Marder, Seth R.; Barlow, StephenPolyhedron (2016), 116 (), 88-95CODEN: PLYHDE; ISSN:0277-5387. (Elsevier Ltd.)Mo(S2C2(CF3)2)3, 1a, has proven a useful p-dopant in org. electronics. To develop more sol. p-dopants, MoS2-9 was treated with alkynes CF3CCCO2Me and CF3CCCOCF3 to give the dianions of the corresponding tris(dithiolene) complexes, 1b2- and 1c2-, resp., which were then oxidized to neutral molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)-ethane-1,2-dithiolene], 1b, and molybdenum tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene], 1c, using NO+PF-6. The crystal structures of (NEt+4)21b2-, (NEt+4)21c2-, and neutral 1c have been detd. In all three cases, the metal coordination is approx. trigonal prismatic and the major isomer is cis (approx. C3v). The structure of 1b2- is distorted by a twist towards pseudo-octahedral coordination similar to that seen in structures of 1a2- and Mo(S2C2(CO2Me)2)2-3, 1d2-, salts, and that of 1c exhibits marked folds between the planes formed by the ligand atoms and those formed by the Mo and coordinated S atoms, similar to those seen in the structure of 1a. On the other hand, the metal dithiolene core of 1c2- is essentially undistorted from C3v symmetry. The oxidant strength of the neutral mols. increases in the order 1d < 1b < 1a < 1c, with the potentials ranging from -0.02 to +0.39 V vs. the ferrocenium/ferrocene couple.
- 17Qi, Y.; Sajoto, T.; Barlow, S.; Kim, E.-G.; Brédas, J.-L.; Marder, S. R.; Kahn, A. Use of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport Layers. J. Am. Chem. Soc. 2009, 131, 12530– 12531, DOI: 10.1021/ja904939gGoogle Scholar17https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXpvV2nt70%253D&md5=5fac0de719f3555a67f9afc195facacaUse of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport LayersQi, Yabing; Sajoto, Tissa; Barlow, Stephen; Kim, Eung-Gun; Bredas, Jean-Luc; Marder, Seth R.; Kahn, AntoineJournal of the American Chemical Society (2009), 131 (35), 12530-12531CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)Exptl. and theor. results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)3), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopant for org. mol. semiconductors. The electron affinity of the compd., detd. via inverse photoemission spectroscopy, is 5.6 eV, which is 0.4 eV larger than that of the commonly used p-dopant F4-TCNQ. The LUMO level of Mo(tfd)3 is calcd. to be delocalized over the whole mol., which is expected to lead to low pinning potential. Efficient p-doping of a std. hole transport material (α-NPD) is demonstrated via measurements of Fermi level shifts and enhanced cond. in α-NPD:1% Mo(tfd)3. Rutherford backscattering measurements show good stability of the three-dimensional Mo(tfd)3 mol. in the host matrix with respect to diffusion.
- 18Hynynen, J.; Järsvall, E.; Kroon, R.; Zhang, Y.; Barlow, S.; Marder, S. R.; Kemerink, M.; Lund, A.; Müller, C. Enhanced thermoelectric power factor of tensile drawn poly(3-hexylthiophene). ACS Macro Lett. 2019, 8, 70– 76, DOI: 10.1021/acsmacrolett.8b00820Google Scholar18https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXisFyrsr7K&md5=33ea2ed7251d1cd45b6f41be95a700faEnhanced Thermoelectric Power Factor of Tensile Drawn Poly(3-hexylthiophene)Hynynen, Jonna; Jaersvall, Emmy; Kroon, Renee; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Kemerink, Martijn; Lund, Anja; Muller, ChristianACS Macro Letters (2019), 8 (1), 70-76CODEN: AMLCCD; ISSN:2161-1653. (American Chemical Society)The thermoelec. power factor of a broad range of org. semiconductors scales with their elec. cond. according to a widely obeyed power law, and therefore, strategies that permit this empirical trend to be surpassed are highly sought after. Here, tensile drawing of the conjugated polymer, poly(3-hexylthiophene), (P3HT), is employed to create free-standing films with a high degree of uniaxial alignment. Along the direction of orientation, sequential doping with a molybdenum tris(dithiolene) complex leads to a 5-fold enhancement of the power factor beyond the predicted value, reaching up to 16 μW m-1 K-2 for a cond. of about 13 S cm-1. Neither stretching nor doping affect the glass transition temp. of P3HT, giving rise to robust free-standing materials that are of interest for the design of flexible thermoelec. devices.
- 19Untilova, V.; Hynynen, J.; Hofmann, A. I.; Scheunemann, D.; Zhang, Y.; Barlow, S.; Kemerink, M.; Marder, S. R.; Biniek, L.; Müller, C.; Brinkmann, M. High thermoelectric power factor of poly(3-hexylthiophene) through in-plane alignment and doping with a molybdenum dithiolene complex. Macromolecules 2020, 53, 6314– 6321, DOI: 10.1021/acs.macromol.0c01223Google Scholar19https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXhsVajtLfM&md5=82504474af50f8b0649799ecd43821f9High Thermoelectric Power Factor of Poly(3-hexylthiophene) through In-Plane Alignment and Doping with a Molybdenum Dithiolene ComplexUntilova, Viktoriia; Hynynen, Jonna; Hofmann, Anna I.; Scheunemann, Dorothea; Zhang, Yadong; Barlow, Stephen; Kemerink, Martijn; Marder, Seth R.; Biniek, Laure; Muller, Christian; Brinkmann, MartinMacromolecules (Washington, DC, United States) (2020), 53 (15), 6314-6321CODEN: MAMOBX; ISSN:0024-9297. (American Chemical Society)Here we report a record thermoelec. power factor of up to 160μW m-1 K-2 for the conjugated polymer poly(3-hexylthiophene) (P3HT). This result is achieved through the combination of high-temp. rubbing of thin films together with the use of a large molybdenum dithiolene p-dopant with a high electron affinity. Comparison of the UV-vis-NIR spectra of the chem. doped samples to electrochem. oxidized material reveals an oxidn. level of 10%, i.e. one polaron for every 10 repeat units. The high power factor arises due to an increase in the charge-carrier mobility and hence elec. cond. along the rubbing direction. We conclude that P3HT, with its facile synthesis and outstanding processability, should not be ruled out as a potential thermoelec. material.
- 20Yamashita, Y.; Tsurumi, J.; Kurosawa, T.; Ueji, K.; Tsuneda, Y.; Kohno, S.; Kempe, H.; Kumagai, S.; Okamoto, T.; Takeya, J.; Watanabe, S. Supramolecular cocrystals built through redox-triggered ion intercalation in π-conjugated polymers. Commun. Mater. 2021, 2, 45 DOI: 10.1038/s43246-021-00148-9Google Scholar20https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB38XotVCkt78%253D&md5=45655daf5fa42837638a5b8f23d4865eSupramolecular cocrystals built through redox-triggered ion intercalation in π-conjugated polymersYamashita, Yu; Tsurumi, Junto; Kurosawa, Tadanori; Ueji, Kan; Tsuneda, Yukina; Kohno, Shinya; Kempe, Hideto; Kumagai, Shohei; Okamoto, Toshihiro; Takeya, Jun; Watanabe, ShunCommunications Materials (2021), 2 (1), 45CODEN: CMOAGE; ISSN:2662-4443. (Nature Portfolio)Self-organization in π-conjugated polymers gives rise to a highly ordered lamellar structure, in which inter-chain stacking spontaneously forms two-dimensional conjugated sheets. This multi-layer stacked nature of semicryst. polymers allows the inclusion of various functional mols. In particular, redox-triggered ion-intercalation is an ideal system for mol. doping, for which extremely high charge carrier d. has been achieved. Here, we conducted a detailed structural anal. and electron d. simulation to pinpoint exactly where the guest dopants are located periodically in the void space in a polymer's lamellae. Our findings are indicative of an intercalation compd. of layered polymers and a guest intercalant. We show that a homogeneous cocrystal structure can be realized throughout the host polymer medium, which is proved by the observation of coherent carrier transport. The intercalation cocrystal nature gives the best achievable doping level in semicryst. polymers and excellent environmental stability. These findings should open up possibilities for tuning the collective dynamics of functional mols. through intercalation phenomena.
- 21Jacobs, I. E.; Lin, Y.; Huang, Y.; Ren, X.; Simatos, D.; Chen, C.; Tjhe, D.; Statz, M.; Lai, L.; Finn, P. A.; Neal, W. G.; D’Avino, G.; Lemaur, V.; Fratini, S.; Beljonne, D.; Strzalka, J.; Nielsen, C. B.; Barlow, S.; Marder, S. R.; McCulloch, I.; Sirringhaus, H. High-efficiency ion-exchange doping of conducting polymers. Adv. Mater. 2021, 2102988 DOI: 10.1002/adma.202102988Google ScholarThere is no corresponding record for this reference.
- 22Euvrard, J.; Revaux, A.; Nobre, S. S.; Kahn, A.; Vuillaume, D. Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3 doped PBDTTT-c. J. Appl. Phys. 2018, 123, 225501 DOI: 10.1063/1.5029810Google Scholar22https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXhtFemtbrK&md5=dd28ddbea73d60f054d11d1b97a7e22cToward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3 doped PBDTTT-cEuvrard, J.; Revaux, A.; Nobre, S. S.; Kahn, A.; Vuillaume, D.Journal of Applied Physics (Melville, NY, United States) (2018), 123 (22), 225501/1-225501/10CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)The authors aim to improve the understanding of the doping mechanism involved in the polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)]] (PBDTTT-c) doped with tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] [Mo(tfd-COCF3)3]. The authors follow the evolution of the hole d. with dopant concn. to highlight the limits of org. semiconductor doping. To enable the use of doping to enhance the performance of org. electronic devices, doping efficiency must be understood and improved. The authors report here a study using complementary optical and elec. characterization techniques, which sheds some light on the origin of this limited doping efficiency at a high dopant concn. Two doping mechanisms are considered, the direct charge transfer and the charge transfer complex. The validity of the model involved as well as its impact on the doping efficiency are discussed. (c) 2018 American Institute of Physics.
- 23Nunes Domschke, T.; Bardagot, O.; Benayad, A.; Demadrille, R.; Carella, A.; Clerc, R.; Pereira, A. Unraveling the mechanism behind air instability in thin semiconducting polymer layers p-doped with molybdenum dithiolene complexes. Synth. Met. 2020, 260, 116251 DOI: 10.1016/j.synthmet.2019.116251Google Scholar23https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1MXisVSrsL7P&md5=2d2ba5075414c0ec3197862e9d63c632Unraveling the mechanism behind air instability in thin semiconducting polymer layers p-doped with molybdenum dithiolene complexesNunes Domschke, Tamara; Bardagot, Olivier; Benayad, Anass; Demadrille, Renaud; Carella, Alexandre; Clerc, Raphael; Pereira, AlexandreSynthetic Metals (2020), 260 (), 116251CODEN: SYMEDZ; ISSN:0379-6779. (Elsevier B.V.)Doping efficiency and stability are crucial requirements for the integration of doped org. semiconductors in optoelectronic devices. This work presents a detailed exptl. study on the air stability of p-doped systems based on a low-bandgap polymer, poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl] (PBDTTT-c) doped with a strong mol. p-dopant, i.e. molybdenum tris[1-(trifluoroethanoyl)-2-(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd-COCF3)3). The elec. cond. and the optical absorption are measured for different dopant concns. in argon atm., and their variations monitored as a function of the air exposure time. The results indicate a clear instability under ambient air related to a dedoping process, which is particularly pronounced in ultra-thin (< 50 nm) doped layers. By evaluating the stability of the p-doped polymer layers under different atmospheres (ambient air, anhyd. air and argon), the detrimental impact of moisture and/or O2(H20)n complexes is highlighted. XPS revealed that the p-doping instability in ambient air can be assigned to changes in the oxidn. state of the metallic center as well as to an intrinsic degrdn. of the dopant mol. This study unravels an important degrdn. mechanism with this class of dopants that should be taken under consideration and solved for future integration of ultrathin p-doped layers in printed electronic devices.
- 24Barrière, F.; Camire, N.; Geiger, W. E.; Mueller-Westerhoff, U. T.; Sanders, R. Use of Medium Effects to Tune the ΔE1/2 Values of Bimetallic and Oligometallic Compounds. J. Am. Chem. Soc. 2002, 124, 7262– 7263, DOI: 10.1021/ja020309dGoogle Scholar24https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XktVKjtrk%253D&md5=7dccf3082653716809854d440bb204c1Use of Medium Effects to Tune the ΔE1/2 Values of Bimetallic and Oligometallic CompoundsBarriere, Frederic; Camire, Nicole; Geiger, William E.; Mueller-Westerhoff, Ulrich T.; Sanders, RichardJournal of the American Chemical Society (2002), 124 (25), 7262-7263CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)The redox potentials of bis(fulvalene)dinickel (1), and the tetrakis(ferrocenyl)nickel dithiolene complex (2) were measured in a variety of nonaq. electrolytes. The difference in E1/2 values of the two successive 1-electron oxidns. of 1 (i.e., ΔE1/2 values) increased from a low of 212 mV in anisole/[NBu4]Cl to a high of 850 mV in CH2Cl2-Na[B(C6H3(CF3)2)4], reflecting an increase of over 1010 in the comproportionation const. (Kcomp = [1+]2/[1][12+]). Six reversible 1-electron processes are possible for compd. 2, the four oxidns. arising from the ferrocenyl substituents, and the two redns. arising from the Ni dithiolene moiety. The E1/2 spreads of the four oxidn. waves and the two redn. waves are both highly sensitive to medium effects. For both 1 and 2, the largest ΔE1/2 values for cationic products are found in solvents of low polarity and donor strength contg. electrolyte salts having large anions and small cations. Conversely, the smallest ΔE1/2 values for anionic products are found under these conditions, culminating in the observation of a single two-electron redn. wave for 2/22- in CH2Cl2-Na[B(C6H3(CF3)2)4]. A combination of solvation and ion-pairing effects must be considered, and may be used to advantage, when using ΔE1/2 values as a measure of electronic interactions between redox centers in compds. contg. two or more electron-transfer sites.
- 25Zokaei, S.; Kroon, R.; Gladisch, J.; Paulsen, B. D.; Sohn, W.; Hofmann, A. I.; Persson, G.; Stamm, A.; Syrén, P.-O.; Olsson, E.; Rivnay, J.; Stavrinidou, E.; Lund, A.; Müller, C. Toughening of a Soft Polar Polythiophene through Copolymerization with Hard Urethane Segments. Adv. Sci. 2021, 8, 2002778 DOI: 10.1002/advs.202002778Google Scholar25https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3MXps1yls7s%253D&md5=0b476b3c0f3193fc4793e8372f53b14eToughening of a Soft Polar Polythiophene through Copolymerization with Hard Urethane SegmentsZokaei, Sepideh; Kroon, Renee; Gladisch, Johannes; Paulsen, Bryan D.; Sohn, Wonil; Hofmann, Anna I.; Persson, Gustav; Stamm, Arne; Syren, Per-Olof; Olsson, Eva; Rivnay, Jonathan; Stavrinidou, Eleni; Lund, Anja; Mueller, ChristianAdvanced Science (Weinheim, Germany) (2021), 8 (2), 2002778CODEN: ASDCCF; ISSN:2198-3844. (Wiley-VCH Verlag GmbH & Co. KGaA)Polar polythiophenes with oligoethylene glycol side chains are exceedingly soft materials. A low glass transition temp. and low degree of crystallinity prevents their use as a bulk material. The synthesis of a copolymer comprising 1) soft polythiophene blocks with tetraethylene glycol side chains, and 2) hard urethane segments is reported. The mol. design is contrary to that of other semiconductor-insulator copolymers, which typically combine a soft nonconjugated spacer with hard conjugated segments. Copolymn. of polar polythiophenes and urethane segments results in a ductile material that can be used as a free-standing solid. The copolymer displays a storage modulus of 25 MPa at room temp., elongation at break of 95%, and a reduced degree of swelling due to hydrogen bonding. Both chem. doping and electrochem. oxidn. reveal that the introduction of urethane segments does not unduly reduce the hole charge-carrier mobility and ability to take up charge. Further, stable operation is obsd. when the copolymer is used as the active layer of org. electrochem. transistors.
- 26Wang, E.; Hou, L.; Wang, Z.; Hellström, S.; Zhang, F.; Inganäs, O.; Andersson, M. R. An Easily Synthesized Blue Polymer for High-Performance Polymer Solar Cells. Adv. Mater. 2010, 22, 5240– 5244, DOI: 10.1002/adma.201002225Google Scholar26https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXhsFClurfP&md5=f2eb255e12121eb15db2986eb7665859An Easily Synthesized Blue Polymer for High-Performance Polymer Solar CellsWang, Ergang; Hou, Lintao; Wang, Zhongqiang; Hellstroem, Stefan; Zhang, Fengling; Inganaes, Olle; Andersson, Mats R.Advanced Materials (Weinheim, Germany) (2010), 22 (46), 5240-5244CODEN: ADVMEW; ISSN:0935-9648. (Wiley-VCH Verlag GmbH & Co. KGaA)The authors report an easily synthesized donor-acceptor (D-A) type of low bandgap polymer based on thiophene and quinoxaline named poly[2,3-bis(3-octyloxyphenyl)quinoxaline-5,8-diyl-thiophene-2,5-diyl] (TQ1) and explore its application in polymer solar cells. This polymer structure and its optical properties have previously been disclosed by Yamamoto et al.(l9). Recently, several similar polymers with different side chains were synthesized with low mol. wts., showing poor photovoltaic performance. In this paper, the authors modify the synthesis of the monomers and also TQ1 and investigate its optical, electrochem. and photovoltaic properties. After early optimization of the prepn. of the solar cells, a max. power point (MPP) up to 6 mW/m2 was achieved with a high VOC of ca. 0.9 V from a blend of TQ1 and [70]PCBM under illumination from an air mass 1.5 global (AM 1.5G) solar simulator (100 mW/cm2).
- 27Kroon, R.; Gehlhaar, R.; Steckler, T. T.; Henriksson, P.; Müller, C.; Bergqvist, J.; Hadipour, A.; Heremans, P.; Andersson, M. R. New quinoxaline and pyridopyrazine-based polymers for solution-processable photovoltaics. Sol. Energy Mater. Sol. Cells 2012, 105, 280– 286, DOI: 10.1016/j.solmat.2012.06.029Google Scholar27https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC38XhtFWht7vO&md5=fb41d26ced86b73565aead4e53aaa201New quinoxaline and pyridopyrazine-based polymers for solution-processable photovoltaicsKroon, Renee; Gehlhaar, Robert; Steckler, Timothy T.; Henriksson, Patrik; Mueller, Christian; Bergqvist, Jonas; Hadipour, Afshin; Heremans, Paul; Andersson, Mats R.Solar Energy Materials & Solar Cells (2012), 105 (), 280-286CODEN: SEMCEQ; ISSN:0927-0248. (Elsevier B.V.)The recently published quinoxaline/thiophene-based polymer TQ1 has been modified on its acceptor unit, either altering the acceptor strength by incorporating a pyridopyrazine, substitution of the acceptor-hydrogens by fluorine, or substitution of the alkoxy side chain by alkyl. The changes in phys., electronic and device properties are discussed. For the polymers incorporating the stronger acceptors a decreased performance is found, where in both cases the current in the devices is compromised. Incorporation of the pyridopyrazine-based acceptor seems to result in more severe or addnl. loss mechanisms compared to the polymer that incorporates the fluorine atoms. A similar performing material is obtained when changing the alkoxy side chain in TQ1 to an alkyl, where the solar cell performance is mainly improved on the fill factor. It is demonstrated that the std. TQ1 structure is easily modified in a no. of ways, showing the versatility and robustness of the std. TQ1 structure and synthesis.
- 28Arvind, M.; Tait, C. E.; Guerrini, M.; Krumland, J.; Valencia, A. M.; Cocchi, C.; Mansour, A. E.; Koch, N.; Barlow, S.; Marder, S. R.; Behrends, J.; Neher, D. Quantitative Analysis of Doping-Induced Polarons and Charge-Transfer Complexes of Poly(3-hexylthiophene) in Solution. J. Phys. Chem. B 2020, 124, 7694– 7708, DOI: 10.1021/acs.jpcb.0c03517Google Scholar28https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXht1alsLnO&md5=b1d21484bf514780f2a2d9c63a6b952fQuantitative Analysis of Doping-Induced Polarons and Charge-Transfer Complexes of Poly(3-hexylthiophene) in SolutionArvind, Malavika; Tait, Claudia E.; Guerrini, Michele; Krumland, Jannis; Valencia, Ana M.; Cocchi, Caterina; Mansour, Ahmed E.; Koch, Norbert; Barlow, Stephen; Marder, Seth R.; Behrends, Jan; Neher, DieterJournal of Physical Chemistry B (2020), 124 (35), 7694-7708CODEN: JPCBFK; ISSN:1520-5207. (American Chemical Society)The mechanism and the nature of the species formed by mol. doping of the model polymer poly(3-hexylthiophene) (P3HT) in its regioregular (rre-) and regiorandom (rra-) forms in soln. are investigated for three different dopants: the prototypical π-electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), the strong Lewis acid tris(pentafluorophenyl)borane (BCF), and the strongly oxidizing complex molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-CO2Me)3). In a combined optical and ESR study, we show that the doping of rreP3HT in soln. occurs by integer charge transfer, resulting in formation of P3HT radical cations (polarons) for all of the dopants considered here. Remarkably, despite the different chem. nature of the dopants and dopant-polymer interaction, the formed polarons exhibit essentially identical optical absorption spectra. The situation is very different for the doping of rraP3HT, where we observe formation of a charge-transfer complex with F4TCNQ and of a "localized" P3HT polaron on nonaggregated chains upon doping with BCF, while there is no indication of dopant-induced species in the case of Mo(tfd-CO2Me)3. We est. the ionization efficiency of the resp. dopants for the two polymers in soln. and report the molar extinction coeff. spectra of the three different species. Finally, we observe increased spin delocalization in regioregular compared to regiorandom P3HT by electron nuclear double resonance, suggesting that the ability of the charge to delocalize on aggregates of planarized polymer backbones plays a significant role in detg. the doping mechanism.
- 29Fekl, U.; Sarkar, B.; Kaim, W.; Zimmer-De Iuliis, M.; Nguyen, N. Tuning of the Spin Distribution between Ligand- and Metal-Based Spin: Electron Paramagnetic Resonance of Mixed-Ligand Molybdenum Tris(dithiolene) Complex Anions. Inorg. Chem. 2011, 50, 8685– 8687, DOI: 10.1021/ic201047kGoogle Scholar29https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXhtVGnu7rO&md5=137ddc2c26aedb716a36d7d5cd5d4dcdTuning of the Spin Distribution between Ligand- and Metal-Based Spin: Electron Paramagnetic Resonance of Mixed-Ligand Molybdenum Tris(dithiolene) Complex AnionsFekl, Ulrich; Sarkar, Biprajit; Kaim, Wolfgang; Zimmer-De Iuliis, Marco; Nguyen, NeilsonInorganic Chemistry (2011), 50 (18), 8685-8687CODEN: INOCAJ; ISSN:0020-1669. (American Chemical Society)ESR spectra of homoleptic and mixed-ligand molybdenum tris(dithiolene) complex anions [Mo(tfd)m(bdt)n]- (n + m = 3; bdt = S2C6H4; tfd = S2C2(CF3)2) showed that the spin d. had mixed metal-ligand character with more ligand-based spin for [Mo(tfd)3]- and a higher degree of metal-based spin for [Mo(bdt)3]-. The magnitude of the isotropic 95,97Mo hyperfine interaction increased continuously, by a factor of 2.5, on going from the former to the latter. The mixed complexes were in between, and the metal character of the spin increased with the bdt content. The expts. were corroborated by d. functional theory computations, which reproduced this steady increase in metal-based character.
- 30Davison, A.; Edelstein, N.; Holm, R. H.; Maki, A. H. Synthetic and Electron Spin Resonance Studies of Six-Coordinate Complexes Related by Electron-Transfer Reactions. J. Am. Chem. Soc. 1964, 86, 2799– 2805, DOI: 10.1021/ja01068a010Google Scholar30https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaF2cXkt12msrs%253D&md5=55df56f9f6234ad1b2696b4e8a0390aaSynthetic and electron spin resonance (E.S.R.) studies of six-coordinate complexes related by electron-transfer reactionsDavison, A.; Edelstein, N.; Holm, R. H.; Maki, A. H.Journal of the American Chemical Society (1964), 86 (14), 2799-805CODEN: JACSAT; ISSN:0002-7863.A new series of 6-coordinate complexes of the general type [MS6-C6R6]2 with R = CF3 (M = Cr, Mo, W, z = 0, 1-, 2-) and R = CN(M = Cr, V, z = 2-; M = Cr; z = 3-)was prepd. These complexes are similar to related bis complexes in that they contain metals stabilized in several different oxidn. states, and complexes of given R and M can be interconverted by simple oxidn.-redn. reactions. The syntheses of all compds. are described in detail, and chem. stabilities are discussed in terms of polarog. half-wave potentials. The results of magnetic susceptibility, E.S.R., and IR studies are discussed. E.S.R. results show the presence of a strong trigonal component in the octahedral ligand field in complexes with a doublet ground state, and are not in agreement with the conventional d01 or (a1*)1 ground state. Probable electronic structures of these complexes are discussed.
- 31Tenderholt, A. L.; Szilagyi, R. K.; Holm, R. H.; Hodgson, K. O.; Hedman, B.; Solomon, E. I. Electronic Control of the “Bailar Twist” in Formally d0-d2 Molybdenum Tris(dithiolene) Complexes: A Sulfur K-edge X-ray Absorption Spectroscopy and Density Functional Theory Study. Inorg. Chem. 2008, 47, 6382– 6392, DOI: 10.1021/ic800494hGoogle Scholar31https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXms1agtrg%253D&md5=fb2b3c2e3d4d4a81799dde053635c05aElectronic Control of the "Bailar Twist" in Formally d-d2 Molybdenum Tris(dithiolene) Complexes: A Sulfur K-edge X-ray Absorption Spectroscopy and Density Functional Theory StudyTenderholt, Adam L.; Szilagyi, Robert K.; Holm, Richard H.; Hodgson, Keith O.; Hedman, Britt; Solomon, Edward I.Inorganic Chemistry (2008), 47 (14), 6382-6392CODEN: INOCAJ; ISSN:0020-1669. (American Chemical Society)Sulfur K-edge X-ray absorption spectroscopy (XAS) and d. functional theory (DFT-GGA) calcns. have been used to det. the electronic structures of a series of Mo tris(dithiolene) complexes, [Mo(mdt)3]z (where mdt = 1,2-dimethylethene-1,2-dithiolate(2-) and z = 2-, 1-, 0), with near trigonal-prismatic geometries (D3h symmetry). These results show that the formally MoIV, MoV, and MoVI complexes actually have a (dz2)2 configuration, i.e., remain effectively MoIV despite oxidn. Comparisons with the XAS data of another set of Mo tris(dithiolene) complexes, [Mo(tbbdt)3]z (where tbbdt = 3,5-di-tert-butylbenzene-1,2-dithiolate(2-) and z = 1-, 0), show that both neutral complexes, [Mo(mdt)3] and [Mo(tbbdt)3], have similar electronic structures while the monoanions do not. Calcns. reveal that the "Bailar twist" present in the crystal structure of [Mo(tbbdt)3]1- (D3 symmetry) but not [Mo(mdt)3]1- (D3h symmetry) is controlled by electronic factors which arise from bonding differences between the mdt and tbbdt ligands. In the former, CI between the Mo dz2 and a deeper energy, occupied ligand orbital, which occurs in D3 symmetry, destabilizes the Mo dz2 to above another ligand orbital which is half-occupied in the D3h [Mo(mdt)3]1- complex. This leads to a metal d1 configuration with no ligand holes (i.e., d1[L3]0h) for [Mo(tbbdt)3]1- rather than the metal d2 configuration with one ligand hole (i.e., d2[L3]1h) for [Mo(mdt)3]1-. Thus, the Bailar twist obsd. in some metal tris(dithiolene) complexes is the result of CI between metal and ligand orbitals and can be probed exptl. by S K-edge XAS.
- 32Connelly, N. G.; Geiger, W. E. Chemical Redox Agents for Organometallic Chemistry. Chem. Rev. 1996, 96, 877– 910, DOI: 10.1021/cr940053xGoogle Scholar32https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28XhsVGhu7Y%253D&md5=205b204d99818aded3c41067d4bf85e3Chemical Redox Agents for Organometallic ChemistryConnelly, Neil G.; Geiger, William E.Chemical Reviews (Washington, D. C.) (1996), 96 (2), 877-910CODEN: CHREAY; ISSN:0009-2665. (American Chemical Society)A review, with >461 refs., showing how one-electron oxidants and reductants have been used in preparative chem. (incorporating both synthetic applications and generation of species for in situ characterization) in nonaq. solns., the usual media for organometallic ET reactions. The authors do not treat photochem.-generated reducing agents which, although generally transient species, may have advantages in some applications.
- 33Hofmann, A. I.; Kroon, R.; Zokaei, S.; Järsvall, E.; Malacrida, C.; Ludwigs, S.; Biskup, T.; Müller, C. Chemical doping of conjugated polymers with the strong oxidant magic blue. Adv. Electron. Mater. 2020, 6, 2000249 DOI: 10.1002/aelm.202000249Google Scholar33https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXhtl2qsrvM&md5=e04dff86a15c6511fff34207b9aeff48Chemical Doping of Conjugated Polymers with the Strong Oxidant Magic BlueHofmann, Anna I.; Kroon, Renee; Zokaei, Sepideh; Jaersvall, Emmy; Malacrida, Claudia; Ludwigs, Sabine; Biskup, Till; Mueller, ChristianAdvanced Electronic Materials (2020), 6 (8), 2000249CODEN: AEMDBW; ISSN:2199-160X. (Wiley-VCH Verlag GmbH & Co. KGaA)Mol. doping of org. semiconductors is a powerful tool for the optimization of org. electronic devices and org. thermoelec. materials. However, there are few redox dopants that have a sufficiently high electron affinity to allow the doping of conjugated polymers with an ionization energy of more than 5.3 eV. Here, p-doping of a broad palette of conjugated polymers with high ionization energies is achieved by using the strong oxidant tris(4-bromophenyl)ammoniumyl hexachloroantimonate (Magic Blue). In particular diketopyrrolopyrrole (DPP)-based copolymers reach a cond. of up to 100 S cm-1 and a thermoelec. power factor of 10μW m-1 K-2. Further, both ESR (EPR) as well as a combination of spectroelectrochem. and chronoamperometry is used to est. the charge-carrier d. of the polymer PDPP-3T doped with Magic Blue. A molar attenuation coeff. of 6.0 ± 0.2 × 103 m2 mol-1 is obtained for the first polaronic sub-bandgap absorption of electrochem. oxidized PDPP-3T. Comparison with chem. doped PDPP-3T suggests a charge-carrier d. on the order of 1026 m-3, which yields a charge-carrier mobility of up to 0.5 cm2 V-1 s-1 for the most heavily doped material.
- 34Untilova, V.; Biskup, T.; Biniek, L.; Vijayakumar, V.; Brinkmann, M. Control of chain alignment and crystallization helps enhance charge conductivities and thermoelectric power factors in sequentially doped P3HT:F4TCNQ films. Macromolecules 2020, 53, 2441– 2453, DOI: 10.1021/acs.macromol.9b02389Google Scholar34https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXltF2lsrs%253D&md5=3eeb8ac2ffd4e2386a14f7568f9d3908Control of Chain Alignment and Crystallization Helps Enhance Charge Conductivities and Thermoelectric Power Factors in Sequentially Doped P3HT:F4TCNQ FilmsUntilova, Viktoriia; Biskup, Till; Biniek, Laure; Vijayakumar, Vishnu; Brinkmann, MartinMacromolecules (Washington, DC, United States) (2020), 53 (7), 2441-2453CODEN: MAMOBX; ISSN:0024-9297. (American Chemical Society)Thermoelectricity has gained considerable interest in the past decade due to the advent of org. thermoelec. materials. Crystallinity and doping level crucially det. the thermoelec. figure of merit of semiconducting polymers. Hence, detailed insight into these factors is prerequisite for developing efficient devices. Here we show that the semicryst. structure of aligned P3HT films shows superior thermoelec. efficiencies as compared to the smectic-like phase because of both a higher in-plane orientation and a higher doping level. Conductivities up to 160 S/cm and power factors of 56μW m-1 K-2 along the rubbing direction are obtained vs. a few μW m-1 K-2 for nonoriented films. Different intercalation mechanisms of F4TCNQ in the layers of alkyl side chains are evidenced by electron diffraction in doped oriented films of the smectic-like and the semicryst. phases. We provide compelling evidence that doping of the smectic-like phase promotes ordering of P3HT backbones along the chain direction within individual π-stacks, whereas for the semicryst. phase dopant intercalation reorganizes the arrangement of successive π-stacks and perturbs the packing of alkyl side chains. Insight into the orientation of F4TCNQ- anions in the layers of alkyl side chains of P3HT crystals was further retrieved from a detailed polarized UV-vis-NIR spectroscopic anal. Our results demonstrate that both orientation of the polymer chains and crystallinity enhance the thermoelec. properties as well as the doping level. We anticipate that detailed control of polymer morphol. in films further improves the thermoelec. figure of merit of semiconducting polymers.
- 35Veregin, R. P.; Harbour, J. R. Electron spin resonance spectroscopic study of electronic charge transport in an aromatic diamine. J. Phys. Chem. B 1990, 94, 6231– 6237, DOI: 10.1021/j100379a016Google Scholar35https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK3cXkvV2qu7o%253D&md5=ef3a15a7a4004892e2265757c4a0466aElectron spin resonance spectroscopic study of electronic charge transport in an aromatic diamineVeregin, Richard P.; Harbour, John R.Journal of Physical Chemistry (1990), 94 (16), 6231-7CODEN: JPCHAX; ISSN:0022-3654.ESR spectra have been obtained for the radical cation of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) in dichloromethane soln., in solid amorphous films, and in TPD/polycarbonate films doped with tris(p-bromophenyl)ammoniumyl hexachloroantimonate or HNO3. By use of ESR the mediation of electronic charge (hole) transport via the TPD+ radical cation has been obsd. in the TPD films in the absence of an applied field. Arrhenius activation parameters were calcd. for charge transport from the ESR data, giving Ea = 10 ± 2 kJ/mol, A = (1.7 ± 1) × 1010 s-1, and a rate const. at 300 K of (3.1 ± 1) × 108 s-1. The value of Ea is one-half that from time-of-flight (TOF) measurements extrapolated to zero field, while the rate const. is a factor of 10 smaller, and A is a factor of 1000 smaller. The differences can be understood in terms of the compensation effect due to the presence of residual solvent, and the ion pairing of an TPD+ ions with dopant counterions. In TPD/polycarbonate films the rate of hole transport is too slow to produce significant changes in the ESR spectrum. The rate of charge transport is thus <2 × 108 -1 in these films, consistent with TOF data. In dichloromethane soln., and Ea of 9.8 kJ/mol was obsd. with ESR. Extrapolating the soln. data to solid TPD gives a hole transport rate of 9.74 × 109 s-1, a factor of 3 higher than that from TOF data. The lower Ea and higher rate in dichloromethane soln. are consistent with the effect of the higher dielec. const. compared to an TPD film. This suggests that the rate-detg. step for hole transport is the same in soln. as it is in the solid state.
- 36Kroon, R.; Kiefer, D.; Stegerer, D.; Yu, L.; Sommer, M.; Müller, C. Polar side chains enhance processability, electrical conductivity, and thermal stability of a molecularly p-doped polythiophene. Adv. Mater. 2017, 29, 1700930 DOI: 10.1002/adma.201700930Google ScholarThere is no corresponding record for this reference.
- 37Schröder, M.; Biskup, T. cwepr – A Python package for analysing cw-EPR data focussing on reproducibility and simple usage. J. Magn. Reson. 2022, 335, 107140 DOI: 10.1016/j.jmr.2021.107140Google Scholar37https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A280%3ADC%252BB2M%252FltFOjtQ%253D%253D&md5=3500dae702d3c68673869adf8ef18ddecwepr - A Python package for analysing cw-EPR data focussing on reproducibility and simple usageSchroder Mirjam; Biskup TillJournal of magnetic resonance (San Diego, Calif. : 1997) (2022), 335 (), 107140 ISSN:.Reproducibility is at the heart of science. Nevertheless, with the advent of computer-based data processing and analysis, most spectroscopists have a hard time fully reproducing a figure from last year's publication starting from the raw data. Unfortunately, this renders their work eventually unscientific. To change this, we need to develop analysis tools that relieve their users from having to trace each processing and analysis step. Furthermore, these tools need to be modular, extendible, and easy to use in order to get used. To this end, we present here the open-source Python package cwepr based on the ASpecD framework for reproducible analysis of spectroscopic data. This package follows best practices of both, science and software development. Key features include an automatically generated gap-less record of each individual processing and analysis step from the raw data to the final published figure. Additionally, it provides a powerful user interface requiring no programming skills of the user. Due to its code quality, modularity, and extensive documentation, it can be easily extended and is actively developed by spectroscopists working in the field. We expect this approach to have a high impact in the field and to help fighting the looming reproducibility crisis in spectroscopy.
- 38Schröder, M.; Biskup, T. Cwepr Python Package, Zenodo 2021.Google ScholarThere is no corresponding record for this reference.
Cited By
This article is cited by 2 publications.
- Ross Warren, Eunkyung Cho, Hong Li, Jean-Luc Bredas, Norbert Koch. Understanding the Double Doping of Organic Semiconductors Via State Energy Renormalization upon Charging. ACS Materials Letters 2022, 4
(10)
, 2051-2057. https://doi.org/10.1021/acsmaterialslett.2c00619
- Gustav Persson, Emmy Järsvall, Magnus Röding, Renee Kroon, Yadong Zhang, Stephen Barlow, Seth R. Marder, Christian Müller, Eva Olsson. Visualisation of individual dopants in a conjugated polymer: sub-nanometre 3D spatial distribution and correlation with electrical properties. Nanoscale 2022, 14
(41)
, 15404-15413. https://doi.org/10.1039/D2NR03554E
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.
Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.
The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.
Recommended Articles
References
This article references 38 other publications.
- 1Organic Flexible Electronics: Fundamentals, Devices, and Applications, 1st ed.; Cosseddu, P.; Caironi, M., Eds.; Woodhead Publishing: Duxford, UK, 2021.There is no corresponding record for this reference.
- 2Simon, D. T.; Gabrielsson, E. O.; Tybrandt, K.; Berggren, M. Organic Bioelectronics: Bridging the Signaling Gap between Biology and Technology. Chem. Rev. 2016, 116, 13009– 13041, DOI: 10.1021/acs.chemrev.6b001462https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtVyrur7I&md5=57086c8309a7d360d24fb813f44cb03fOrganic Bioelectronics: Bridging the Signaling Gap between Biology and TechnologySimon, Daniel T.; Gabrielsson, Erik O.; Tybrandt, Klas; Berggren, MagnusChemical Reviews (Washington, DC, United States) (2016), 116 (21), 13009-13041CODEN: CHREAY; ISSN:0009-2665. (American Chemical Society)A review. The electronics in people's daily lives rely almost exclusively on electrons as the dominant charge carrier. In stark contrast, biol. systems rarely use electrons but rather use ions and mols. of varying size. Due to the unique combination of both electronic and ionic/mol. cond. in conducting and semiconducting org. polymers and small mols., these materials have emerged in recent decades as excellent tools for translating signals between these two realms and, therefore, providing a means to effectively interface biol. with conventional electronics, thus, the field of org. bioelectronics. Today, org. bioelectronics defines a generic platform with unprecedented biol. recording and regulation tools and is maturing toward applications ranging from life sciences to the clinic. In this Review, the authors introduce the field, from its early breakthroughs to its current results and future challenges.
- 3Lüssem, B.; Riede, M.; Leo, K. Doping of organic semiconductors. Phys. Status Solidi A 2013, 210, 9– 43, DOI: 10.1002/pssa.2012283103https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC38XhvVyrtLbN&md5=3028d24bf630eae80c6ca787ab64e41bDoping of organic semiconductorsLuessem, B.; Riede, M.; Leo, K.Physica Status Solidi A: Applications and Materials Science (2013), 210 (1), 9-43CODEN: PSSABA; ISSN:1862-6300. (Wiley-VCH Verlag GmbH & Co. KGaA)A review. The understanding and applications of org. semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small org. LED (OLED) displays; other areas of application such as OLED lighting and org. photovoltaics are on the verge of broad commercialization. Org. semiconductors are superior to inorg. ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, elec. doping of org. semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorg. semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evapd. org. layers with mol. dopants. Recently, both p- and n-type mol. dopants have been developed that lead to efficient and stable doping of org. thin films. Due to doping, the cond. of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between org. layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and org. solar cells is highlighted in this review. Overall, controlled mol. doping can be considered as key enabling technol. for many different org. device types that can lead to significant improvements in efficiencies and lifetimes.
- 4Jacobs, I. E.; Moulé, A. J. Controlling molecular doping in organic semiconductors. Adv. Mater. 2017, 29, 1703063 DOI: 10.1002/adma.201703063There is no corresponding record for this reference.
- 5Scaccabarozzi, A. D.; Basu, A.; Aniés, F.; Liu, J.; Zapata-Arteaga, O.; Warren, R.; Firdaus, Y.; Nugraha, M. I.; Lin, Y.; Campoy-Quiles, M.; Koch, N.; Müller, C.; Tsetseris, L.; Heeney, M.; Anthopoulos, T. D. Doping Approaches for Organic Semiconductors. Chem. Rev. 2022, 122, 4420– 4492, DOI: 10.1021/acs.chemrev.1c005815https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3MXisFSgtLjJ&md5=1785c05b2620a3f751b0559c1865797aDoping Approaches for Organic SemiconductorsScaccabarozzi, Alberto D.; Basu, Aniruddha; Anies, Filip; Liu, Jian; Zapata-Arteaga, Osnat; Warren, Ross; Firdaus, Yuliar; Nugraha, Mohamad Insan; Lin, Yuanbao; Campoy-Quiles, Mariano; Koch, Norbert; Muller, Christian; Tsetseris, Leonidas; Heeney, Martin; Anthopoulos, Thomas D.Chemical Reviews (Washington, DC, United States) (2022), 122 (4), 4420-4492CODEN: CHREAY; ISSN:0009-2665. (American Chemical Society)A review. Electronic doping in org. materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for org. materials with high elec. cond., paving the way for the pioneering work on pristine org. semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of org. electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of org. semiconductors and their applications. We first review the relevant literature with particular focus on the phys. processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chem. strategies toward the synthesis of mols. with improved functionality. The processing routes toward doped org. films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various org. devices.
- 6Li, J.; Duchemin, I.; Roscioni, O. M.; Friederich, P.; Anderson, M.; Da Como, E.; Kociok-Köhn, G.; Wenzel, W.; Zannoni, C.; Beljonne, D.; Blase, X.; D’Avino, G. Host dependence of the electron affinity of molecular dopants. Mater. Horiz. 2019, 6, 107– 114, DOI: 10.1039/C8MH00921J6https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXhvVejurzO&md5=93fc9d3dcb28a274fdda67ff8ce4a8ceHost dependence of the electron affinity of molecular dopantsLi, Jing; Duchemin, Ivan; Roscioni, Otello Maria; Friederich, Pascal; Anderson, Marie; Da Como, Enrico; Kociok-Kohn, Gabriele; Wenzel, Wolfgang; Zannoni, Claudio; Beljonne, David; Blase, Xavier; D'Avino, GabrieleMaterials Horizons (2019), 6 (1), 107-114CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)Charge carriers energetics is key in electron transfer processes such as those that enable the elec. doping of org. semiconductors. In this study, we take advantage of the quant. accuracy of embedded GW calcns. to perform a series of virtual expts. that allow measuring the electron affinity of p-type dopants in different host solids. Our calcns. show that the energy levels of a mol. impurity strongly depend on the host environment as a result of electrostatic intermol. interactions. In particular, the electron affinity of a dopant impurity in a given semiconductor is found to be up to 1 eV lower than that of the pure dopant crystal. This result questions the pertinence of the electron affinity measured for pure dopants in order to predict doping efficiency in a specific host. The role of the Coulomb electron-hole interaction for the dopant-to-semiconductor charge transfer and for the release of doping-induced charges is discussed.
- 7Salzmann, I.; Heimel, G.; Oehzelt, M.; Winkler, S.; Koch, N. Molecular electrical doping of organic semiconductors: fundamental mechanisms and emerging dopant design rules. Acc. Chem. Res. 2016, 49, 370– 378, DOI: 10.1021/acs.accounts.5b004387https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XitFSjsrY%253D&md5=cc3b2014b0e798e89fa0f673aa011c7dMolecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design RulesSalzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, NorbertAccounts of Chemical Research (2016), 49 (3), 370-378CODEN: ACHRE4; ISSN:0001-4842. (American Chemical Society)A review. Today's information society depends on the authors' ability to controllably dope inorg. semiconductors, such as silicon, thereby tuning their elec. properties to application-specific demands. For optoelectronic devices, org. semiconductors, i.e., conjugated polymers and mols., have emerged as s superior alternative owing to the ease of tuning their optical gap through chem. variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of mol. elec. doping for improving the performance of, for example, org. light-emitting devices or org. solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of mol. doping in org. semiconductors are only little understood compared with their inorg. counterparts. .Here, the authors review the broad range of phenomena obsd. upon molecularly doping org. semiconductors and identify two distinctly different scenarios: the pairwise formation of both org. semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between org. semiconductor and dopant through supramol. hybridization of their resp. frontier MOs on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed from the characteristic and strikingly different signatures of the individual species involved in the resp. doping processes in a variety of spectroscopic techniques. The crit. importance of a statistical view of doping, rather than a bimol. picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorg. and org. semiconductors to be their resp. d. of electronic states and the doping induced changes thereof. Engineering the d. of states of doped org. semiconductors, the Fermi-Dirac occupation of which ultimately dets. the doping efficiency, thus emerges as key challenge. As a 1st step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant mols. as an addnl. design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, resp. In an extended outlook, the authors finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixt. of dopant mols. to org. semiconductors does affect the d. of states: compared with their inorg. counterparts, traps for charge carriers are omnipresent in org. semiconductors due to structural and chem. imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in org. semiconductors owing to their lower dielec. const. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and mols. Once completed, such a picture will provide viable guidelines for synthetic and supramol. chem. that will enable further technol. advances in org. and hybrid org./inorg. devices.
- 8Nell, B.; Ortstein, K.; Boltalina, O. V.; Vandewal, K. Influence of dopant–host energy level offset on thermoelectric properties of doped organic semiconductors. J. Phys. Chem. C 2018, 122, 11730– 11735, DOI: 10.1021/acs.jpcc.8b038048https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXptlyju7o%253D&md5=a665fe8b25ef7c15a9d82d8840e3752bInfluence of dopant-host energy level offset on thermoelectric properties of doped organic semiconductorsNell, Bernhard; Ortstein, Katrin; Boltalina, Olga V.; Vandewal, KoenJournal of Physical Chemistry C (2018), 122 (22), 11730-11735CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)Increasing the amt. of charge carriers by mol. doping is important to improve the function of several org. electronic devices. In this work, the authors use highly fluorinated fullerene (C60F48) to p-type dope common amorphous mol. host materials. They observe a general relation between the material's elec. cond. and Seebeck coeff., both strongly depending on the energy level offset between the amorphous host and the dopant. This suggests that the doping efficiency at similar doping levels is mainly detd. by the electron transfer yield from host to dopant. Indeed, the dopant anion and host cation absorption strength correlate with the ionization energy (IE) of the host material. Host materials with an IE significantly below the electron affinity of the dopant yield the highest doping efficiency. Surprisingly, the doping efficiency reduces only by about 1 order of magnitude when the IE of the host material is increased by 0.55 eV, which they attribute to the disordered nature of the host materials.
- 9Euvrard, J.; Revaux, A.; Bayle, P.-A.; Bardet, M.; Vuillaume, D.; Kahn, A. The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentration. Org. Electron. 2018, 53, 135– 140, DOI: 10.1016/j.orgel.2017.11.0209https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXhvV2qsLnF&md5=2ed763a7e6ecd26eff1f7ea43d3188b1The formation of polymer-dopant aggregates as a possible origin of limited doping efficiency at high dopant concentrationEuvrard, Julie; Revaux, Amelie; Bayle, Pierre-Alain; Bardet, Michel; Vuillaume, Dominique; Kahn, AntoineOrganic Electronics (2018), 53 (), 135-140CODEN: OERLAU; ISSN:1566-1199. (Elsevier B.V.)The polymer Poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b)dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl] (PBDTTT-c) p-doped with the mol. dopant tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-COCF3)3) exhibits a decline in transport properties at high doping concns., which limits the performance attainable through org. semiconductor doping. SEM is used to correlate the evolution of hole cond. and hopping transport activation energy with the formation of aggregates in the layer. Transmission Electron Microscopy with energy-dispersive X-ray anal. along with liq.-state NMR expts. are carried out to det. the compn. of the aggregates. This study offers an explanation to the limited efficiency of doping at high dopant concns. and reinforces the need to increase doping efficiency in order to be able to reduce the dopant concn. and not neg. affect cond.
- 10Duong, D. T.; Wang, C.; Antono, E.; Toney, M. F.; Salleo, A. The chemical and structural origin of efficient p-type doping in P3HT. Org. Electron. 2013, 14, 1330– 1336, DOI: 10.1016/j.orgel.2013.02.02810https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXmt1Clsr8%253D&md5=dbe1ccee73b6e2e48528dfd1b29d2623The chemical and structural origin of efficient p-type doping in P3HTDuong, Duc T.; Wang, Chenchen; Antono, Erin; Toney, Michael F.; Salleo, AlbertoOrganic Electronics (2013), 14 (5), 1330-1336CODEN: OERLAU; ISSN:1566-1199. (Elsevier B.V.)We investigate the chem. and structural properties of soln.-processed thin films of P3HT blended with p-type dopant F4TCNQ. The max. in-plane elec. cond. of doped films is obsd. at a molar doping fraction of 0.17, in agreement with the binding mechanism of F4TCNQ:P3HT complexes. Through the use of X-ray diffraction, a previously unreported cryst. phase is obsd. for P3HT films doped above a crit. threshold concn. This cryst. phase involves the incorporation of F4TCNQ mols. into ordered polymer regions and ultimately improves charge dissocn., leading to higher carrier d. in thin film. Finally, optical absorption and X-ray diffraction reveal that the chem. state of P3HT in soln. has a dramatic impact on the elec. and structural properties of the blended films.
- 11Dixon, A. L.; Vezin, H.; Nguyen, T.-Q.; Reddy, G. N. M. Structural insights into Lewis acid- and F4TCNQ-doped conjugated polymers by solid-state magnetic resonance spectroscopy. Mater. Horiz. 2022, 9, 981– 990, DOI: 10.1039/D1MH01574E11https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB38Xislyruw%253D%253D&md5=2b5536c04d37fbe501f3fe322f9fbca7Structural insights into Lewis acid- and F4TCNQ-doped conjugated polymers by solid-state magnetic resonance spectroscopyDixon, Alana L.; Vezin, Herve; Nguyen, Thuc-Quyen; Reddy, G. N. ManjunathaMaterials Horizons (2022), 9 (3), 981-990CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)Mol. doping strategies facilitate orders of magnitude enhancement in the charge carrier mobility of org. semiconductors (OSCs). Understanding the different doping mechanisms and mol.-level constraints on doping efficiency related to the material energy levels is crucial to develop versatile dopants for OSCs. Given the compositional and structural heterogeneities assocd. with OSC thin films, insight into dopant-polymer interactions by long-range techniques such as X-ray scattering and electron microscopy is exceedingly challenging to obtain. This study employs short-range probes, solid-state (ss) NMR and EPR spectroscopy, to resolve local structures and intermol. interactions between dopants such as F4TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane), Lewis acid BCF (tris[pentafluorophenyl] borane) and Lewis base conjugated polymer, PCPDTBT (P4) (poly[2,6-(4,4-bis(2-hexadecyl)-4H-cyclopenta[2,1-b;3,4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]). Anal. of 1H and 13C ssNMR spectra of P4, P4 : F4TCNQ and P4 : BCF blends indicates that the addn. of dopants induces local structural changes in the P4 polymer, and causes paramagnetism-induced signal broadening and intensity losses. The hyperfine interactions in P4 : BCF and P4 : F4TCNQ are characterized by two-dimensional pulsed EPR spectroscopy. For P4 : F4TCNQ, 19F ssNMR anal. indicates that the F4TCNQ mols. are distributed and aggregated into different local chem. environments.
- 12Kiefer, D.; Kroon, R.; Hofmann, A. I.; Sun, H.; Liu, X.; Giovannitti, A.; Stegerer, D.; Cano, A.; Hynynen, J.; Yu, L.; Zhang, Y.; Nai, D.; Harrelson, T. F.; Sommer, M.; Moulé, A. J.; Kemerink, M.; Marder, S. R.; McCulloch, I.; Fahlman, M.; Fabiano, S.; Müller, C. Double doping of conjugated polymers with monomer molecular dopants. Nat. Mater. 2019, 18, 149– 155, DOI: 10.1038/s41563-018-0263-612https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1MXmt1Oktbs%253D&md5=f3b09a943b9edecf64ef493a17f35ba3Double doping of conjugated polymers with monomer molecular dopantsKiefer, David; Kroon, Renee; Hofmann, Anna I.; Sun, Hengda; Liu, Xianjie; Giovannitti, Alexander; Stegerer, Dominik; Cano, Alexander; Hynynen, Jonna; Yu, Liyang; Zhang, Yadong; Nai, Dingqi; Harrelson, Thomas F.; Sommer, Michael; Moule, Adam J.; Kemerink, Martijn; Marder, Seth R.; McCulloch, Iain; Fahlman, Mats; Fabiano, Simone; Muller, ChristianNature Materials (2019), 18 (2), 149-155CODEN: NMAACR; ISSN:1476-1122. (Nature Research)Mol. doping is a crucial tool for controlling the charge-carrier concn. in org. semiconductors. Each dopant mol. is commonly thought to give rise to only one polaron, leading to a max. of one donor:acceptor charge-transfer complex and hence an ionization efficiency of 100%. However, this theor. limit is rarely achieved because of incomplete charge transfer and the presence of unreacted dopant. Here, we establish that common p-dopants can in fact accept two electrons per mol. from conjugated polymers with a low ionization energy. Each dopant mol. participates in two charge-transfer events, leading to the formation of dopant dianions and an ionization efficiency of up to 200%. Furthermore, we show that the resulting integer charge-transfer complex can dissoc. with an efficiency of up to 170%. The concept of double doping introduced here may allow the dopant fraction required to optimize charge conduction to be halved.
- 13Goel, M.; Siegert, M.; Krauss, G.; Mohanraj, J.; Hochgesang, A.; Heinrich, D. C.; Fried, M.; Pflaum, J.; Thelakkat, M. HOMO–HOMO electron transfer: An elegant strategy for p-type doping of polymer semiconductors toward thermoelectric applications. Adv. Mater. 2020, 32, 2003596 DOI: 10.1002/adma.20200359613https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXhvVKgtrnI&md5=876167efc0f58974212d37ef0110fa16HOMO-HOMO Electron Transfer: An Elegant Strategy for p-Type Doping of Polymer Semiconductors toward Thermoelectric ApplicationsGoel, Mahima; Siegert, Marie; Krauss, Gert; Mohanraj, John; Hochgesang, Adrian; Heinrich, David C.; Fried, Martina; Pflaum, Jens; Thelakkat, MukundanAdvanced Materials (Weinheim, Germany) (2020), 32 (43), 2003596CODEN: ADVMEW; ISSN:0935-9648. (Wiley-VCH Verlag GmbH & Co. KGaA)Unlike the conventional p-doping of org. semiconductors (OSCs) using acceptors, here, an efficient doping concept for diketopyrrolopyrrole-based polymer PDPP[T]2-EDOT (OSC-1) is presented using an oxidized p-type semiconductor, Spiro-OMeTAD(TFSI)2 (OSC-2), exploiting electron transfer from HOMOOSC-1 to HOMOOSC-2. A shift of work function toward the HOMOOSC-1 upon doping is confirmed by UPS. Detailed XPS and UV-vis-NIR absorption studies confirm HOMOOSC-1 to HOMOOSC-2 electron transfer. The redn. products of Spiro-OMeTAD(TFSI)2 to Spiro-OMeTAD(TFSI)2 and Spiro-OMeTAD is also confirmed and their relative amts. in doped samples is detd. Mott-Schottky anal. shows two orders of magnitude increase in free charge carrier d. and one order of magnitude increase in the charge carrier mobility. The cond. increases considerably by four orders of magnitude to a max. of 10 S m-1 for a very low doping ratio of 8 mol%. The doped polymer films exhibit high thermal and ambient stability resulting in a max. power factor of 0.07μW m-1 K-2 at a Seebeck coeff. of 140μV K-1 for a very low doping ratio of 4 mol%. Also, the concept of HOMOOSC-1 to HOMOOSC-2 electron transfer is a highly efficient, stable and generic way to p-dope other conjugated polymers.
- 14Krauss, G.; Hochgesang, A.; Mohanraj, J.; Thelakkat, M. Highly Efficient Doping of Conjugated Polymers Using Multielectron Acceptor Salts. Macromol. Rapid Commun. 2021, 42, 2100443 DOI: 10.1002/marc.20210044314https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3MXitlWntL7N&md5=5705cbc1e4040e4d8056c51a0860a43cHighly Efficient Doping of Conjugated Polymers Using Multielectron Acceptor SaltsKrauss, Gert; Hochgesang, Adrian; Mohanraj, John; Thelakkat, MukundanMacromolecular Rapid Communications (2021), 42 (22), 2100443CODEN: MRCOE3; ISSN:1022-1336. (Wiley-VCH Verlag GmbH & Co. KGaA)Chem. doping is a vital tool for tuning electronic properties of conjugated polymers. Most single electron acceptors used for p-doping necessitate high dopant concns. to achieve good elec. cond. However, high-molar doping ratios hamper doping efficiency. Here a new concept of using multielectron acceptor (MEA) salts as dopants for conjugated polymers is presented. Two novel MEA salts are synthesized and their doping efficiency to toward two polymers differing in their dielec. properties are compared with two single electron acceptors such as NOPF6 and magic blue. Cutting-edge methods such as UPS/XPS, impedance spectroscopy, and d. of states anal. in addn. to UV-vis-NIR absorption, spectroelectrochem., and Raman spectroscopy methods are used to characterize the doped systems. The tetracation salt improves the cond. by two orders of magnitude and quadruples the charge carrier concn. compared to single electron acceptors for the same molar ratio. The differences in charge carrier d. and activation energy on doping are delineated. Further, a strong dependency of the carrier release on the polymer polarity is obsd. High carrier densities at reduced dopant loadings and improved doping efficacies using MEA dopants offer a highly efficient doping strategy for conjugated polymers.
- 15Paniagua, S. A.; Baltazar, J.; Sojoudi, H.; Mohapatra, S. K.; Zhang, S.; Henderson, C. L.; Graham, S.; Barlow, S.; Marder, S. R. Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal–organic species. Mater. Horiz. 2014, 1, 111– 115, DOI: 10.1039/C3MH00035D15https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvVShsbrO&md5=04a92aad248993ed5ec2c436060abd60Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal-organic speciesPaniagua, Sergio A.; Baltazar, Jose; Sojoudi, Hossein; Mohapatra, Swagat K.; Zhang, Siyuan; Henderson, Clifford L.; Graham, Samuel; Barlow, Stephen; Marder, Seth R.Materials Horizons (2014), 1 (1), 111-115CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)CVD graphene has been n- and p-doped using redox-active, soln.-processed metal-org. complexes. Elec. measurements, photoemission spectroscopies, and Raman spectroscopy were used to characterize the doped films and give insights into the changes. The work function decreased by as much as 1.3 eV with the n-dopant, with contributions from electron transfer and surface dipole, and the cond. significantly increased.
- 16Mohapatra, S. K.; Zhang, Y.; Sandhu, B.; Fonari, M. S.; Timofeeva, T. V.; Marder, S. R.; Barlow, S. Synthesis, characterization, and crystal structures of molybdenum complexes of unsymmetrical electron-poor dithiolene ligands. Polyhedron 2016, 116, 88– 95, DOI: 10.1016/j.poly.2016.04.02516https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XmvFyjtLw%253D&md5=9d72fafaa35554b0ab8ea2fe669913e1Synthesis, characterization, and crystal structures of molybdenum complexes of unsymmetrical electron-poor dithiolene ligandsMohapatra, Swagat K.; Zhang, Yadong; Sandhu, Bhupinder; Fonari, Marina S.; Timofeeva, Tatiana V.; Marder, Seth R.; Barlow, StephenPolyhedron (2016), 116 (), 88-95CODEN: PLYHDE; ISSN:0277-5387. (Elsevier Ltd.)Mo(S2C2(CF3)2)3, 1a, has proven a useful p-dopant in org. electronics. To develop more sol. p-dopants, MoS2-9 was treated with alkynes CF3CCCO2Me and CF3CCCOCF3 to give the dianions of the corresponding tris(dithiolene) complexes, 1b2- and 1c2-, resp., which were then oxidized to neutral molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)-ethane-1,2-dithiolene], 1b, and molybdenum tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene], 1c, using NO+PF-6. The crystal structures of (NEt+4)21b2-, (NEt+4)21c2-, and neutral 1c have been detd. In all three cases, the metal coordination is approx. trigonal prismatic and the major isomer is cis (approx. C3v). The structure of 1b2- is distorted by a twist towards pseudo-octahedral coordination similar to that seen in structures of 1a2- and Mo(S2C2(CO2Me)2)2-3, 1d2-, salts, and that of 1c exhibits marked folds between the planes formed by the ligand atoms and those formed by the Mo and coordinated S atoms, similar to those seen in the structure of 1a. On the other hand, the metal dithiolene core of 1c2- is essentially undistorted from C3v symmetry. The oxidant strength of the neutral mols. increases in the order 1d < 1b < 1a < 1c, with the potentials ranging from -0.02 to +0.39 V vs. the ferrocenium/ferrocene couple.
- 17Qi, Y.; Sajoto, T.; Barlow, S.; Kim, E.-G.; Brédas, J.-L.; Marder, S. R.; Kahn, A. Use of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport Layers. J. Am. Chem. Soc. 2009, 131, 12530– 12531, DOI: 10.1021/ja904939g17https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXpvV2nt70%253D&md5=5fac0de719f3555a67f9afc195facacaUse of a High Electron-Affinity Molybdenum Dithiolene Complex to p-Dope Hole-Transport LayersQi, Yabing; Sajoto, Tissa; Barlow, Stephen; Kim, Eung-Gun; Bredas, Jean-Luc; Marder, Seth R.; Kahn, AntoineJournal of the American Chemical Society (2009), 131 (35), 12530-12531CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)Exptl. and theor. results are presented on the electronic structure of molybdenum tris[1,2-bis(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd)3), a high electron-affinity organometallic complex that constitutes a promising candidate as a p-dopant for org. mol. semiconductors. The electron affinity of the compd., detd. via inverse photoemission spectroscopy, is 5.6 eV, which is 0.4 eV larger than that of the commonly used p-dopant F4-TCNQ. The LUMO level of Mo(tfd)3 is calcd. to be delocalized over the whole mol., which is expected to lead to low pinning potential. Efficient p-doping of a std. hole transport material (α-NPD) is demonstrated via measurements of Fermi level shifts and enhanced cond. in α-NPD:1% Mo(tfd)3. Rutherford backscattering measurements show good stability of the three-dimensional Mo(tfd)3 mol. in the host matrix with respect to diffusion.
- 18Hynynen, J.; Järsvall, E.; Kroon, R.; Zhang, Y.; Barlow, S.; Marder, S. R.; Kemerink, M.; Lund, A.; Müller, C. Enhanced thermoelectric power factor of tensile drawn poly(3-hexylthiophene). ACS Macro Lett. 2019, 8, 70– 76, DOI: 10.1021/acsmacrolett.8b0082018https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXisFyrsr7K&md5=33ea2ed7251d1cd45b6f41be95a700faEnhanced Thermoelectric Power Factor of Tensile Drawn Poly(3-hexylthiophene)Hynynen, Jonna; Jaersvall, Emmy; Kroon, Renee; Zhang, Yadong; Barlow, Stephen; Marder, Seth R.; Kemerink, Martijn; Lund, Anja; Muller, ChristianACS Macro Letters (2019), 8 (1), 70-76CODEN: AMLCCD; ISSN:2161-1653. (American Chemical Society)The thermoelec. power factor of a broad range of org. semiconductors scales with their elec. cond. according to a widely obeyed power law, and therefore, strategies that permit this empirical trend to be surpassed are highly sought after. Here, tensile drawing of the conjugated polymer, poly(3-hexylthiophene), (P3HT), is employed to create free-standing films with a high degree of uniaxial alignment. Along the direction of orientation, sequential doping with a molybdenum tris(dithiolene) complex leads to a 5-fold enhancement of the power factor beyond the predicted value, reaching up to 16 μW m-1 K-2 for a cond. of about 13 S cm-1. Neither stretching nor doping affect the glass transition temp. of P3HT, giving rise to robust free-standing materials that are of interest for the design of flexible thermoelec. devices.
- 19Untilova, V.; Hynynen, J.; Hofmann, A. I.; Scheunemann, D.; Zhang, Y.; Barlow, S.; Kemerink, M.; Marder, S. R.; Biniek, L.; Müller, C.; Brinkmann, M. High thermoelectric power factor of poly(3-hexylthiophene) through in-plane alignment and doping with a molybdenum dithiolene complex. Macromolecules 2020, 53, 6314– 6321, DOI: 10.1021/acs.macromol.0c0122319https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXhsVajtLfM&md5=82504474af50f8b0649799ecd43821f9High Thermoelectric Power Factor of Poly(3-hexylthiophene) through In-Plane Alignment and Doping with a Molybdenum Dithiolene ComplexUntilova, Viktoriia; Hynynen, Jonna; Hofmann, Anna I.; Scheunemann, Dorothea; Zhang, Yadong; Barlow, Stephen; Kemerink, Martijn; Marder, Seth R.; Biniek, Laure; Muller, Christian; Brinkmann, MartinMacromolecules (Washington, DC, United States) (2020), 53 (15), 6314-6321CODEN: MAMOBX; ISSN:0024-9297. (American Chemical Society)Here we report a record thermoelec. power factor of up to 160μW m-1 K-2 for the conjugated polymer poly(3-hexylthiophene) (P3HT). This result is achieved through the combination of high-temp. rubbing of thin films together with the use of a large molybdenum dithiolene p-dopant with a high electron affinity. Comparison of the UV-vis-NIR spectra of the chem. doped samples to electrochem. oxidized material reveals an oxidn. level of 10%, i.e. one polaron for every 10 repeat units. The high power factor arises due to an increase in the charge-carrier mobility and hence elec. cond. along the rubbing direction. We conclude that P3HT, with its facile synthesis and outstanding processability, should not be ruled out as a potential thermoelec. material.
- 20Yamashita, Y.; Tsurumi, J.; Kurosawa, T.; Ueji, K.; Tsuneda, Y.; Kohno, S.; Kempe, H.; Kumagai, S.; Okamoto, T.; Takeya, J.; Watanabe, S. Supramolecular cocrystals built through redox-triggered ion intercalation in π-conjugated polymers. Commun. Mater. 2021, 2, 45 DOI: 10.1038/s43246-021-00148-920https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB38XotVCkt78%253D&md5=45655daf5fa42837638a5b8f23d4865eSupramolecular cocrystals built through redox-triggered ion intercalation in π-conjugated polymersYamashita, Yu; Tsurumi, Junto; Kurosawa, Tadanori; Ueji, Kan; Tsuneda, Yukina; Kohno, Shinya; Kempe, Hideto; Kumagai, Shohei; Okamoto, Toshihiro; Takeya, Jun; Watanabe, ShunCommunications Materials (2021), 2 (1), 45CODEN: CMOAGE; ISSN:2662-4443. (Nature Portfolio)Self-organization in π-conjugated polymers gives rise to a highly ordered lamellar structure, in which inter-chain stacking spontaneously forms two-dimensional conjugated sheets. This multi-layer stacked nature of semicryst. polymers allows the inclusion of various functional mols. In particular, redox-triggered ion-intercalation is an ideal system for mol. doping, for which extremely high charge carrier d. has been achieved. Here, we conducted a detailed structural anal. and electron d. simulation to pinpoint exactly where the guest dopants are located periodically in the void space in a polymer's lamellae. Our findings are indicative of an intercalation compd. of layered polymers and a guest intercalant. We show that a homogeneous cocrystal structure can be realized throughout the host polymer medium, which is proved by the observation of coherent carrier transport. The intercalation cocrystal nature gives the best achievable doping level in semicryst. polymers and excellent environmental stability. These findings should open up possibilities for tuning the collective dynamics of functional mols. through intercalation phenomena.
- 21Jacobs, I. E.; Lin, Y.; Huang, Y.; Ren, X.; Simatos, D.; Chen, C.; Tjhe, D.; Statz, M.; Lai, L.; Finn, P. A.; Neal, W. G.; D’Avino, G.; Lemaur, V.; Fratini, S.; Beljonne, D.; Strzalka, J.; Nielsen, C. B.; Barlow, S.; Marder, S. R.; McCulloch, I.; Sirringhaus, H. High-efficiency ion-exchange doping of conducting polymers. Adv. Mater. 2021, 2102988 DOI: 10.1002/adma.202102988There is no corresponding record for this reference.
- 22Euvrard, J.; Revaux, A.; Nobre, S. S.; Kahn, A.; Vuillaume, D. Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3 doped PBDTTT-c. J. Appl. Phys. 2018, 123, 225501 DOI: 10.1063/1.502981022https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1cXhtFemtbrK&md5=dd28ddbea73d60f054d11d1b97a7e22cToward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)3 doped PBDTTT-cEuvrard, J.; Revaux, A.; Nobre, S. S.; Kahn, A.; Vuillaume, D.Journal of Applied Physics (Melville, NY, United States) (2018), 123 (22), 225501/1-225501/10CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)The authors aim to improve the understanding of the doping mechanism involved in the polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)]] (PBDTTT-c) doped with tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] [Mo(tfd-COCF3)3]. The authors follow the evolution of the hole d. with dopant concn. to highlight the limits of org. semiconductor doping. To enable the use of doping to enhance the performance of org. electronic devices, doping efficiency must be understood and improved. The authors report here a study using complementary optical and elec. characterization techniques, which sheds some light on the origin of this limited doping efficiency at a high dopant concn. Two doping mechanisms are considered, the direct charge transfer and the charge transfer complex. The validity of the model involved as well as its impact on the doping efficiency are discussed. (c) 2018 American Institute of Physics.
- 23Nunes Domschke, T.; Bardagot, O.; Benayad, A.; Demadrille, R.; Carella, A.; Clerc, R.; Pereira, A. Unraveling the mechanism behind air instability in thin semiconducting polymer layers p-doped with molybdenum dithiolene complexes. Synth. Met. 2020, 260, 116251 DOI: 10.1016/j.synthmet.2019.11625123https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC1MXisVSrsL7P&md5=2d2ba5075414c0ec3197862e9d63c632Unraveling the mechanism behind air instability in thin semiconducting polymer layers p-doped with molybdenum dithiolene complexesNunes Domschke, Tamara; Bardagot, Olivier; Benayad, Anass; Demadrille, Renaud; Carella, Alexandre; Clerc, Raphael; Pereira, AlexandreSynthetic Metals (2020), 260 (), 116251CODEN: SYMEDZ; ISSN:0379-6779. (Elsevier B.V.)Doping efficiency and stability are crucial requirements for the integration of doped org. semiconductors in optoelectronic devices. This work presents a detailed exptl. study on the air stability of p-doped systems based on a low-bandgap polymer, poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl] (PBDTTT-c) doped with a strong mol. p-dopant, i.e. molybdenum tris[1-(trifluoroethanoyl)-2-(trifluoromethyl) ethane-1,2-dithiolene] (Mo(tfd-COCF3)3). The elec. cond. and the optical absorption are measured for different dopant concns. in argon atm., and their variations monitored as a function of the air exposure time. The results indicate a clear instability under ambient air related to a dedoping process, which is particularly pronounced in ultra-thin (< 50 nm) doped layers. By evaluating the stability of the p-doped polymer layers under different atmospheres (ambient air, anhyd. air and argon), the detrimental impact of moisture and/or O2(H20)n complexes is highlighted. XPS revealed that the p-doping instability in ambient air can be assigned to changes in the oxidn. state of the metallic center as well as to an intrinsic degrdn. of the dopant mol. This study unravels an important degrdn. mechanism with this class of dopants that should be taken under consideration and solved for future integration of ultrathin p-doped layers in printed electronic devices.
- 24Barrière, F.; Camire, N.; Geiger, W. E.; Mueller-Westerhoff, U. T.; Sanders, R. Use of Medium Effects to Tune the ΔE1/2 Values of Bimetallic and Oligometallic Compounds. J. Am. Chem. Soc. 2002, 124, 7262– 7263, DOI: 10.1021/ja020309d24https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XktVKjtrk%253D&md5=7dccf3082653716809854d440bb204c1Use of Medium Effects to Tune the ΔE1/2 Values of Bimetallic and Oligometallic CompoundsBarriere, Frederic; Camire, Nicole; Geiger, William E.; Mueller-Westerhoff, Ulrich T.; Sanders, RichardJournal of the American Chemical Society (2002), 124 (25), 7262-7263CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)The redox potentials of bis(fulvalene)dinickel (1), and the tetrakis(ferrocenyl)nickel dithiolene complex (2) were measured in a variety of nonaq. electrolytes. The difference in E1/2 values of the two successive 1-electron oxidns. of 1 (i.e., ΔE1/2 values) increased from a low of 212 mV in anisole/[NBu4]Cl to a high of 850 mV in CH2Cl2-Na[B(C6H3(CF3)2)4], reflecting an increase of over 1010 in the comproportionation const. (Kcomp = [1+]2/[1][12+]). Six reversible 1-electron processes are possible for compd. 2, the four oxidns. arising from the ferrocenyl substituents, and the two redns. arising from the Ni dithiolene moiety. The E1/2 spreads of the four oxidn. waves and the two redn. waves are both highly sensitive to medium effects. For both 1 and 2, the largest ΔE1/2 values for cationic products are found in solvents of low polarity and donor strength contg. electrolyte salts having large anions and small cations. Conversely, the smallest ΔE1/2 values for anionic products are found under these conditions, culminating in the observation of a single two-electron redn. wave for 2/22- in CH2Cl2-Na[B(C6H3(CF3)2)4]. A combination of solvation and ion-pairing effects must be considered, and may be used to advantage, when using ΔE1/2 values as a measure of electronic interactions between redox centers in compds. contg. two or more electron-transfer sites.
- 25Zokaei, S.; Kroon, R.; Gladisch, J.; Paulsen, B. D.; Sohn, W.; Hofmann, A. I.; Persson, G.; Stamm, A.; Syrén, P.-O.; Olsson, E.; Rivnay, J.; Stavrinidou, E.; Lund, A.; Müller, C. Toughening of a Soft Polar Polythiophene through Copolymerization with Hard Urethane Segments. Adv. Sci. 2021, 8, 2002778 DOI: 10.1002/advs.20200277825https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3MXps1yls7s%253D&md5=0b476b3c0f3193fc4793e8372f53b14eToughening of a Soft Polar Polythiophene through Copolymerization with Hard Urethane SegmentsZokaei, Sepideh; Kroon, Renee; Gladisch, Johannes; Paulsen, Bryan D.; Sohn, Wonil; Hofmann, Anna I.; Persson, Gustav; Stamm, Arne; Syren, Per-Olof; Olsson, Eva; Rivnay, Jonathan; Stavrinidou, Eleni; Lund, Anja; Mueller, ChristianAdvanced Science (Weinheim, Germany) (2021), 8 (2), 2002778CODEN: ASDCCF; ISSN:2198-3844. (Wiley-VCH Verlag GmbH & Co. KGaA)Polar polythiophenes with oligoethylene glycol side chains are exceedingly soft materials. A low glass transition temp. and low degree of crystallinity prevents their use as a bulk material. The synthesis of a copolymer comprising 1) soft polythiophene blocks with tetraethylene glycol side chains, and 2) hard urethane segments is reported. The mol. design is contrary to that of other semiconductor-insulator copolymers, which typically combine a soft nonconjugated spacer with hard conjugated segments. Copolymn. of polar polythiophenes and urethane segments results in a ductile material that can be used as a free-standing solid. The copolymer displays a storage modulus of 25 MPa at room temp., elongation at break of 95%, and a reduced degree of swelling due to hydrogen bonding. Both chem. doping and electrochem. oxidn. reveal that the introduction of urethane segments does not unduly reduce the hole charge-carrier mobility and ability to take up charge. Further, stable operation is obsd. when the copolymer is used as the active layer of org. electrochem. transistors.
- 26Wang, E.; Hou, L.; Wang, Z.; Hellström, S.; Zhang, F.; Inganäs, O.; Andersson, M. R. An Easily Synthesized Blue Polymer for High-Performance Polymer Solar Cells. Adv. Mater. 2010, 22, 5240– 5244, DOI: 10.1002/adma.20100222526https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXhsFClurfP&md5=f2eb255e12121eb15db2986eb7665859An Easily Synthesized Blue Polymer for High-Performance Polymer Solar CellsWang, Ergang; Hou, Lintao; Wang, Zhongqiang; Hellstroem, Stefan; Zhang, Fengling; Inganaes, Olle; Andersson, Mats R.Advanced Materials (Weinheim, Germany) (2010), 22 (46), 5240-5244CODEN: ADVMEW; ISSN:0935-9648. (Wiley-VCH Verlag GmbH & Co. KGaA)The authors report an easily synthesized donor-acceptor (D-A) type of low bandgap polymer based on thiophene and quinoxaline named poly[2,3-bis(3-octyloxyphenyl)quinoxaline-5,8-diyl-thiophene-2,5-diyl] (TQ1) and explore its application in polymer solar cells. This polymer structure and its optical properties have previously been disclosed by Yamamoto et al.(l9). Recently, several similar polymers with different side chains were synthesized with low mol. wts., showing poor photovoltaic performance. In this paper, the authors modify the synthesis of the monomers and also TQ1 and investigate its optical, electrochem. and photovoltaic properties. After early optimization of the prepn. of the solar cells, a max. power point (MPP) up to 6 mW/m2 was achieved with a high VOC of ca. 0.9 V from a blend of TQ1 and [70]PCBM under illumination from an air mass 1.5 global (AM 1.5G) solar simulator (100 mW/cm2).
- 27Kroon, R.; Gehlhaar, R.; Steckler, T. T.; Henriksson, P.; Müller, C.; Bergqvist, J.; Hadipour, A.; Heremans, P.; Andersson, M. R. New quinoxaline and pyridopyrazine-based polymers for solution-processable photovoltaics. Sol. Energy Mater. Sol. Cells 2012, 105, 280– 286, DOI: 10.1016/j.solmat.2012.06.02927https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC38XhtFWht7vO&md5=fb41d26ced86b73565aead4e53aaa201New quinoxaline and pyridopyrazine-based polymers for solution-processable photovoltaicsKroon, Renee; Gehlhaar, Robert; Steckler, Timothy T.; Henriksson, Patrik; Mueller, Christian; Bergqvist, Jonas; Hadipour, Afshin; Heremans, Paul; Andersson, Mats R.Solar Energy Materials & Solar Cells (2012), 105 (), 280-286CODEN: SEMCEQ; ISSN:0927-0248. (Elsevier B.V.)The recently published quinoxaline/thiophene-based polymer TQ1 has been modified on its acceptor unit, either altering the acceptor strength by incorporating a pyridopyrazine, substitution of the acceptor-hydrogens by fluorine, or substitution of the alkoxy side chain by alkyl. The changes in phys., electronic and device properties are discussed. For the polymers incorporating the stronger acceptors a decreased performance is found, where in both cases the current in the devices is compromised. Incorporation of the pyridopyrazine-based acceptor seems to result in more severe or addnl. loss mechanisms compared to the polymer that incorporates the fluorine atoms. A similar performing material is obtained when changing the alkoxy side chain in TQ1 to an alkyl, where the solar cell performance is mainly improved on the fill factor. It is demonstrated that the std. TQ1 structure is easily modified in a no. of ways, showing the versatility and robustness of the std. TQ1 structure and synthesis.
- 28Arvind, M.; Tait, C. E.; Guerrini, M.; Krumland, J.; Valencia, A. M.; Cocchi, C.; Mansour, A. E.; Koch, N.; Barlow, S.; Marder, S. R.; Behrends, J.; Neher, D. Quantitative Analysis of Doping-Induced Polarons and Charge-Transfer Complexes of Poly(3-hexylthiophene) in Solution. J. Phys. Chem. B 2020, 124, 7694– 7708, DOI: 10.1021/acs.jpcb.0c0351728https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXht1alsLnO&md5=b1d21484bf514780f2a2d9c63a6b952fQuantitative Analysis of Doping-Induced Polarons and Charge-Transfer Complexes of Poly(3-hexylthiophene) in SolutionArvind, Malavika; Tait, Claudia E.; Guerrini, Michele; Krumland, Jannis; Valencia, Ana M.; Cocchi, Caterina; Mansour, Ahmed E.; Koch, Norbert; Barlow, Stephen; Marder, Seth R.; Behrends, Jan; Neher, DieterJournal of Physical Chemistry B (2020), 124 (35), 7694-7708CODEN: JPCBFK; ISSN:1520-5207. (American Chemical Society)The mechanism and the nature of the species formed by mol. doping of the model polymer poly(3-hexylthiophene) (P3HT) in its regioregular (rre-) and regiorandom (rra-) forms in soln. are investigated for three different dopants: the prototypical π-electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ), the strong Lewis acid tris(pentafluorophenyl)borane (BCF), and the strongly oxidizing complex molybdenum tris[1-(methoxycarbonyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] (Mo(tfd-CO2Me)3). In a combined optical and ESR study, we show that the doping of rreP3HT in soln. occurs by integer charge transfer, resulting in formation of P3HT radical cations (polarons) for all of the dopants considered here. Remarkably, despite the different chem. nature of the dopants and dopant-polymer interaction, the formed polarons exhibit essentially identical optical absorption spectra. The situation is very different for the doping of rraP3HT, where we observe formation of a charge-transfer complex with F4TCNQ and of a "localized" P3HT polaron on nonaggregated chains upon doping with BCF, while there is no indication of dopant-induced species in the case of Mo(tfd-CO2Me)3. We est. the ionization efficiency of the resp. dopants for the two polymers in soln. and report the molar extinction coeff. spectra of the three different species. Finally, we observe increased spin delocalization in regioregular compared to regiorandom P3HT by electron nuclear double resonance, suggesting that the ability of the charge to delocalize on aggregates of planarized polymer backbones plays a significant role in detg. the doping mechanism.
- 29Fekl, U.; Sarkar, B.; Kaim, W.; Zimmer-De Iuliis, M.; Nguyen, N. Tuning of the Spin Distribution between Ligand- and Metal-Based Spin: Electron Paramagnetic Resonance of Mixed-Ligand Molybdenum Tris(dithiolene) Complex Anions. Inorg. Chem. 2011, 50, 8685– 8687, DOI: 10.1021/ic201047k29https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXhtVGnu7rO&md5=137ddc2c26aedb716a36d7d5cd5d4dcdTuning of the Spin Distribution between Ligand- and Metal-Based Spin: Electron Paramagnetic Resonance of Mixed-Ligand Molybdenum Tris(dithiolene) Complex AnionsFekl, Ulrich; Sarkar, Biprajit; Kaim, Wolfgang; Zimmer-De Iuliis, Marco; Nguyen, NeilsonInorganic Chemistry (2011), 50 (18), 8685-8687CODEN: INOCAJ; ISSN:0020-1669. (American Chemical Society)ESR spectra of homoleptic and mixed-ligand molybdenum tris(dithiolene) complex anions [Mo(tfd)m(bdt)n]- (n + m = 3; bdt = S2C6H4; tfd = S2C2(CF3)2) showed that the spin d. had mixed metal-ligand character with more ligand-based spin for [Mo(tfd)3]- and a higher degree of metal-based spin for [Mo(bdt)3]-. The magnitude of the isotropic 95,97Mo hyperfine interaction increased continuously, by a factor of 2.5, on going from the former to the latter. The mixed complexes were in between, and the metal character of the spin increased with the bdt content. The expts. were corroborated by d. functional theory computations, which reproduced this steady increase in metal-based character.
- 30Davison, A.; Edelstein, N.; Holm, R. H.; Maki, A. H. Synthetic and Electron Spin Resonance Studies of Six-Coordinate Complexes Related by Electron-Transfer Reactions. J. Am. Chem. Soc. 1964, 86, 2799– 2805, DOI: 10.1021/ja01068a01030https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaF2cXkt12msrs%253D&md5=55df56f9f6234ad1b2696b4e8a0390aaSynthetic and electron spin resonance (E.S.R.) studies of six-coordinate complexes related by electron-transfer reactionsDavison, A.; Edelstein, N.; Holm, R. H.; Maki, A. H.Journal of the American Chemical Society (1964), 86 (14), 2799-805CODEN: JACSAT; ISSN:0002-7863.A new series of 6-coordinate complexes of the general type [MS6-C6R6]2 with R = CF3 (M = Cr, Mo, W, z = 0, 1-, 2-) and R = CN(M = Cr, V, z = 2-; M = Cr; z = 3-)was prepd. These complexes are similar to related bis complexes in that they contain metals stabilized in several different oxidn. states, and complexes of given R and M can be interconverted by simple oxidn.-redn. reactions. The syntheses of all compds. are described in detail, and chem. stabilities are discussed in terms of polarog. half-wave potentials. The results of magnetic susceptibility, E.S.R., and IR studies are discussed. E.S.R. results show the presence of a strong trigonal component in the octahedral ligand field in complexes with a doublet ground state, and are not in agreement with the conventional d01 or (a1*)1 ground state. Probable electronic structures of these complexes are discussed.
- 31Tenderholt, A. L.; Szilagyi, R. K.; Holm, R. H.; Hodgson, K. O.; Hedman, B.; Solomon, E. I. Electronic Control of the “Bailar Twist” in Formally d0-d2 Molybdenum Tris(dithiolene) Complexes: A Sulfur K-edge X-ray Absorption Spectroscopy and Density Functional Theory Study. Inorg. Chem. 2008, 47, 6382– 6392, DOI: 10.1021/ic800494h31https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXms1agtrg%253D&md5=fb2b3c2e3d4d4a81799dde053635c05aElectronic Control of the "Bailar Twist" in Formally d-d2 Molybdenum Tris(dithiolene) Complexes: A Sulfur K-edge X-ray Absorption Spectroscopy and Density Functional Theory StudyTenderholt, Adam L.; Szilagyi, Robert K.; Holm, Richard H.; Hodgson, Keith O.; Hedman, Britt; Solomon, Edward I.Inorganic Chemistry (2008), 47 (14), 6382-6392CODEN: INOCAJ; ISSN:0020-1669. (American Chemical Society)Sulfur K-edge X-ray absorption spectroscopy (XAS) and d. functional theory (DFT-GGA) calcns. have been used to det. the electronic structures of a series of Mo tris(dithiolene) complexes, [Mo(mdt)3]z (where mdt = 1,2-dimethylethene-1,2-dithiolate(2-) and z = 2-, 1-, 0), with near trigonal-prismatic geometries (D3h symmetry). These results show that the formally MoIV, MoV, and MoVI complexes actually have a (dz2)2 configuration, i.e., remain effectively MoIV despite oxidn. Comparisons with the XAS data of another set of Mo tris(dithiolene) complexes, [Mo(tbbdt)3]z (where tbbdt = 3,5-di-tert-butylbenzene-1,2-dithiolate(2-) and z = 1-, 0), show that both neutral complexes, [Mo(mdt)3] and [Mo(tbbdt)3], have similar electronic structures while the monoanions do not. Calcns. reveal that the "Bailar twist" present in the crystal structure of [Mo(tbbdt)3]1- (D3 symmetry) but not [Mo(mdt)3]1- (D3h symmetry) is controlled by electronic factors which arise from bonding differences between the mdt and tbbdt ligands. In the former, CI between the Mo dz2 and a deeper energy, occupied ligand orbital, which occurs in D3 symmetry, destabilizes the Mo dz2 to above another ligand orbital which is half-occupied in the D3h [Mo(mdt)3]1- complex. This leads to a metal d1 configuration with no ligand holes (i.e., d1[L3]0h) for [Mo(tbbdt)3]1- rather than the metal d2 configuration with one ligand hole (i.e., d2[L3]1h) for [Mo(mdt)3]1-. Thus, the Bailar twist obsd. in some metal tris(dithiolene) complexes is the result of CI between metal and ligand orbitals and can be probed exptl. by S K-edge XAS.
- 32Connelly, N. G.; Geiger, W. E. Chemical Redox Agents for Organometallic Chemistry. Chem. Rev. 1996, 96, 877– 910, DOI: 10.1021/cr940053x32https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28XhsVGhu7Y%253D&md5=205b204d99818aded3c41067d4bf85e3Chemical Redox Agents for Organometallic ChemistryConnelly, Neil G.; Geiger, William E.Chemical Reviews (Washington, D. C.) (1996), 96 (2), 877-910CODEN: CHREAY; ISSN:0009-2665. (American Chemical Society)A review, with >461 refs., showing how one-electron oxidants and reductants have been used in preparative chem. (incorporating both synthetic applications and generation of species for in situ characterization) in nonaq. solns., the usual media for organometallic ET reactions. The authors do not treat photochem.-generated reducing agents which, although generally transient species, may have advantages in some applications.
- 33Hofmann, A. I.; Kroon, R.; Zokaei, S.; Järsvall, E.; Malacrida, C.; Ludwigs, S.; Biskup, T.; Müller, C. Chemical doping of conjugated polymers with the strong oxidant magic blue. Adv. Electron. Mater. 2020, 6, 2000249 DOI: 10.1002/aelm.20200024933https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXhtl2qsrvM&md5=e04dff86a15c6511fff34207b9aeff48Chemical Doping of Conjugated Polymers with the Strong Oxidant Magic BlueHofmann, Anna I.; Kroon, Renee; Zokaei, Sepideh; Jaersvall, Emmy; Malacrida, Claudia; Ludwigs, Sabine; Biskup, Till; Mueller, ChristianAdvanced Electronic Materials (2020), 6 (8), 2000249CODEN: AEMDBW; ISSN:2199-160X. (Wiley-VCH Verlag GmbH & Co. KGaA)Mol. doping of org. semiconductors is a powerful tool for the optimization of org. electronic devices and org. thermoelec. materials. However, there are few redox dopants that have a sufficiently high electron affinity to allow the doping of conjugated polymers with an ionization energy of more than 5.3 eV. Here, p-doping of a broad palette of conjugated polymers with high ionization energies is achieved by using the strong oxidant tris(4-bromophenyl)ammoniumyl hexachloroantimonate (Magic Blue). In particular diketopyrrolopyrrole (DPP)-based copolymers reach a cond. of up to 100 S cm-1 and a thermoelec. power factor of 10μW m-1 K-2. Further, both ESR (EPR) as well as a combination of spectroelectrochem. and chronoamperometry is used to est. the charge-carrier d. of the polymer PDPP-3T doped with Magic Blue. A molar attenuation coeff. of 6.0 ± 0.2 × 103 m2 mol-1 is obtained for the first polaronic sub-bandgap absorption of electrochem. oxidized PDPP-3T. Comparison with chem. doped PDPP-3T suggests a charge-carrier d. on the order of 1026 m-3, which yields a charge-carrier mobility of up to 0.5 cm2 V-1 s-1 for the most heavily doped material.
- 34Untilova, V.; Biskup, T.; Biniek, L.; Vijayakumar, V.; Brinkmann, M. Control of chain alignment and crystallization helps enhance charge conductivities and thermoelectric power factors in sequentially doped P3HT:F4TCNQ films. Macromolecules 2020, 53, 2441– 2453, DOI: 10.1021/acs.macromol.9b0238934https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BB3cXltF2lsrs%253D&md5=3eeb8ac2ffd4e2386a14f7568f9d3908Control of Chain Alignment and Crystallization Helps Enhance Charge Conductivities and Thermoelectric Power Factors in Sequentially Doped P3HT:F4TCNQ FilmsUntilova, Viktoriia; Biskup, Till; Biniek, Laure; Vijayakumar, Vishnu; Brinkmann, MartinMacromolecules (Washington, DC, United States) (2020), 53 (7), 2441-2453CODEN: MAMOBX; ISSN:0024-9297. (American Chemical Society)Thermoelectricity has gained considerable interest in the past decade due to the advent of org. thermoelec. materials. Crystallinity and doping level crucially det. the thermoelec. figure of merit of semiconducting polymers. Hence, detailed insight into these factors is prerequisite for developing efficient devices. Here we show that the semicryst. structure of aligned P3HT films shows superior thermoelec. efficiencies as compared to the smectic-like phase because of both a higher in-plane orientation and a higher doping level. Conductivities up to 160 S/cm and power factors of 56μW m-1 K-2 along the rubbing direction are obtained vs. a few μW m-1 K-2 for nonoriented films. Different intercalation mechanisms of F4TCNQ in the layers of alkyl side chains are evidenced by electron diffraction in doped oriented films of the smectic-like and the semicryst. phases. We provide compelling evidence that doping of the smectic-like phase promotes ordering of P3HT backbones along the chain direction within individual π-stacks, whereas for the semicryst. phase dopant intercalation reorganizes the arrangement of successive π-stacks and perturbs the packing of alkyl side chains. Insight into the orientation of F4TCNQ- anions in the layers of alkyl side chains of P3HT crystals was further retrieved from a detailed polarized UV-vis-NIR spectroscopic anal. Our results demonstrate that both orientation of the polymer chains and crystallinity enhance the thermoelec. properties as well as the doping level. We anticipate that detailed control of polymer morphol. in films further improves the thermoelec. figure of merit of semiconducting polymers.
- 35Veregin, R. P.; Harbour, J. R. Electron spin resonance spectroscopic study of electronic charge transport in an aromatic diamine. J. Phys. Chem. B 1990, 94, 6231– 6237, DOI: 10.1021/j100379a01635https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK3cXkvV2qu7o%253D&md5=ef3a15a7a4004892e2265757c4a0466aElectron spin resonance spectroscopic study of electronic charge transport in an aromatic diamineVeregin, Richard P.; Harbour, John R.Journal of Physical Chemistry (1990), 94 (16), 6231-7CODEN: JPCHAX; ISSN:0022-3654.ESR spectra have been obtained for the radical cation of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) in dichloromethane soln., in solid amorphous films, and in TPD/polycarbonate films doped with tris(p-bromophenyl)ammoniumyl hexachloroantimonate or HNO3. By use of ESR the mediation of electronic charge (hole) transport via the TPD+ radical cation has been obsd. in the TPD films in the absence of an applied field. Arrhenius activation parameters were calcd. for charge transport from the ESR data, giving Ea = 10 ± 2 kJ/mol, A = (1.7 ± 1) × 1010 s-1, and a rate const. at 300 K of (3.1 ± 1) × 108 s-1. The value of Ea is one-half that from time-of-flight (TOF) measurements extrapolated to zero field, while the rate const. is a factor of 10 smaller, and A is a factor of 1000 smaller. The differences can be understood in terms of the compensation effect due to the presence of residual solvent, and the ion pairing of an TPD+ ions with dopant counterions. In TPD/polycarbonate films the rate of hole transport is too slow to produce significant changes in the ESR spectrum. The rate of charge transport is thus <2 × 108 -1 in these films, consistent with TOF data. In dichloromethane soln., and Ea of 9.8 kJ/mol was obsd. with ESR. Extrapolating the soln. data to solid TPD gives a hole transport rate of 9.74 × 109 s-1, a factor of 3 higher than that from TOF data. The lower Ea and higher rate in dichloromethane soln. are consistent with the effect of the higher dielec. const. compared to an TPD film. This suggests that the rate-detg. step for hole transport is the same in soln. as it is in the solid state.
- 36Kroon, R.; Kiefer, D.; Stegerer, D.; Yu, L.; Sommer, M.; Müller, C. Polar side chains enhance processability, electrical conductivity, and thermal stability of a molecularly p-doped polythiophene. Adv. Mater. 2017, 29, 1700930 DOI: 10.1002/adma.201700930There is no corresponding record for this reference.
- 37Schröder, M.; Biskup, T. cwepr – A Python package for analysing cw-EPR data focussing on reproducibility and simple usage. J. Magn. Reson. 2022, 335, 107140 DOI: 10.1016/j.jmr.2021.10714037https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A280%3ADC%252BB2M%252FltFOjtQ%253D%253D&md5=3500dae702d3c68673869adf8ef18ddecwepr - A Python package for analysing cw-EPR data focussing on reproducibility and simple usageSchroder Mirjam; Biskup TillJournal of magnetic resonance (San Diego, Calif. : 1997) (2022), 335 (), 107140 ISSN:.Reproducibility is at the heart of science. Nevertheless, with the advent of computer-based data processing and analysis, most spectroscopists have a hard time fully reproducing a figure from last year's publication starting from the raw data. Unfortunately, this renders their work eventually unscientific. To change this, we need to develop analysis tools that relieve their users from having to trace each processing and analysis step. Furthermore, these tools need to be modular, extendible, and easy to use in order to get used. To this end, we present here the open-source Python package cwepr based on the ASpecD framework for reproducible analysis of spectroscopic data. This package follows best practices of both, science and software development. Key features include an automatically generated gap-less record of each individual processing and analysis step from the raw data to the final published figure. Additionally, it provides a powerful user interface requiring no programming skills of the user. Due to its code quality, modularity, and extensive documentation, it can be easily extended and is actively developed by spectroscopists working in the field. We expect this approach to have a high impact in the field and to help fighting the looming reproducibility crisis in spectroscopy.
- 38Schröder, M.; Biskup, T. Cwepr Python Package, Zenodo 2021.There is no corresponding record for this reference.
Supporting Information
Supporting Information
The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.2c01040.
UV–vis–NIR spectra as well as angular-dependent and nonsmoothed EPR spectra (PDF)
Terms & Conditions
Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.