Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory DevicesClick to copy article linkArticle link copied!
- Ae Rim ChoiAe Rim ChoiDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, KoreaMore by Ae Rim Choi
- Dong Hyun LimDong Hyun LimDepartment of Electrical and Computer Engineering, Ajou University, Suwon 16499, KoreaMore by Dong Hyun Lim
- So-Yeon ShinSo-Yeon ShinDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, KoreaMore by So-Yeon Shin
- Hye Joo KangHye Joo KangDepartment of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, KoreaMore by Hye Joo Kang
- Dohee KimDohee KimRevolutionary Technology Center, R&D division, SK hynix Inc., Icheon 17336, KoreaMore by Dohee Kim
- Ja-Yong KimJa-Yong KimRevolutionary Technology Center, R&D division, SK hynix Inc., Icheon 17336, KoreaMore by Ja-Yong Kim
- Youngbae AhnYoungbae AhnRevolutionary Technology Center, R&D division, SK hynix Inc., Icheon 17336, KoreaMore by Youngbae Ahn
- Seung Wook RyuSeung Wook RyuRevolutionary Technology Center, R&D division, SK hynix Inc., Icheon 17336, KoreaMore by Seung Wook Ryu
- Il-Kwon Oh*Il-Kwon Oh*Email: [email protected]Department of Intelligence Semiconductor Engineering, Ajou University, Suwon 16499, KoreaDepartment of Electrical and Computer Engineering, Ajou University, Suwon 16499, KoreaMore by Il-Kwon Oh
Abstract
Dynamic random-access memory (DRAM) devices are essential volatile memory components in most digital devices. With the increasing demand for further low-power and high-density devices, the planar structure of DRAM devices encountered a “memory wall”, ushering in an era of 3D DRAM architecture. InGaZnO-based thin-film transistors (IGZO TFTs) have a very low off current (<10–22 A/μm), representing a solution for new channel materials for next-generation 3D DRAM devices. IGZO TFTs are back-end-of-line (BEOL)-compatible, enabling them to move the DRAM peripheral circuitry under the memory array and integrate stacked DRAM cells. IGZO thin films have been widely studied for next-generation flat panel display applications. However, most studies have employed sputtering and solution-based systems, which hinder process compatibility in 3D DRAM devices with complex structures. Atomic layer deposition (ALD) is a viable alternative for solving these challenges. In this paper, we comprehensively review the reported Zn-, In-, Sn-, and Ga-based oxide semiconductors in terms of the ALD process (precursors, reactants, growth temperature, etc.), together with material properties such as purity, crystallinity, and electrical properties.
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