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Advancing Near-Infrared Light Sources: Enhancing Chromium Emission through Cation Substitution in Ultra-Broadband Near-Infrared Phosphors
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Advancing Near-Infrared Light Sources: Enhancing Chromium Emission through Cation Substitution in Ultra-Broadband Near-Infrared Phosphors
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Chemistry of Materials

Cite this: Chem. Mater. 2023, 35, 23, 10228–10237
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https://doi.org/10.1021/acs.chemmater.3c02466
Published November 17, 2023

Copyright © 2023 The Authors. Published by American Chemical Society. This publication is licensed under

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Abstract

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The growing interest in the use of near-infrared (NIR) radiation for spectroscopy, optical communication, and medical applications spanning both NIR-I (700–900 nm) and NIR-II (900–1700 nm) has driven the need for new NIR light sources. NIR phosphor-converted light-emitting diodes (pc-LEDs) are expected to replace traditional lamps mainly due to their high efficiency and compact design. Broadband NIR phosphors activated by Cr3+ and Cr4+ have attracted significant research interest, offering emission across a wide range from 700 to 1700 nm. In this work, we synthesized a series of Sc2(1–x)Ga2xO3:Cr3+/4+ materials (x = 0–0.2) with broadband NIR-I (Cr3+) and NIR-II (Cr4+) emission. We observed a substantial increase in the intensity of Cr3+ (approximately 77 times) by incorporating Ga3+ ions. Additionally, our investigation revealed that energy transfer occurred between Cr3+ and Cr4+ ions. Configuration diagrams are presented to elucidate the behavior of Cr3+ and Cr4+ ions within the Sc2O3 matrix. We also observed a phase transition at a pressure of 20.2 GPa, resulting in a new unknown phase where Cr3+ luminescence exhibited a high-symmetry environment. Notably, this study presents the pressure-induced shift of NIR Cr4+ luminescence in Sc2(1–x)Ga2xO3:Cr3+/4+. The linear shifts were estimated at 83 ± 3 and 61 ± 6 cm–1/GPa before and after the phase transition. Overall, our findings shed light on the synthesis, luminescent properties, temperature, and high-pressure behavior within the Sc2(1–x)Ga2xO3:Cr3+/4+ materials. This research contributes to the understanding and potential applications of these materials in the development of efficient NIR light sources and other optical devices.

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Copyright © 2023 The Authors. Published by American Chemical Society

Introduction

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The growing interest in the use of near-infrared (NIR) radiation, spanning both NIR-I (700–900 nm) and NIR-II (900–1700 nm), stems from its vast and remarkable applications in fields such as food science, security, and biomedicine. Consequently, there is an urgent need to address the development of a new generation of NIR light sources. (1−4) As a new generation of NIR light sources, NIR phosphor-converted light-emitting diodes (pc-LEDs) are anticipated to replace traditional tungsten halogen lamps due to their low cost, high efficiency, and compact design. (5) These pc-LEDs utilize commercial high-power blue LED chips in combination with inorganic phosphors to achieve the desired near-infrared wavelength. Phosphors activated by transition metals (such as Cr3+, Fe3+, Mn2+, and Ni2+) (6−13) and lanthanide ions (including Yb3+, Er3+, and Eu2+) (14−20) are considered up-and-coming candidates for the new generation of NIR pc-mini/micro-LEDs. Additionally, Bi3+-activated materials (21) and zero-dimensional hybrid antimony chlorides (22) stand out as intriguing alternatives for NIR applications. These NIR light sources can be easily integrated into smartphones or wearable devices, enabling a wide range of functional applications.
In recent years, Cr3+-activated broadband NIR phosphors have garnered significant research interest owing to their exceptional characteristics, including high efficiency, high thermal stability, and tunable spectra. (23−28) These phosphors offer a broad range of emission wavelengths in the near-infrared region. Additionally, Cr4+ has emerged as a promising luminescent center with broadband emission spanning from 1100 to 1700 nm. There are indeed numerous examples of broadband NIR Cr4+-activated phosphors, some of which include Li2ZnGeO4:Cr4+, (29) Li2CaGeO4;Cr4+, (30) Y3Al5O12:Cr4+, (31) and Y2SiO5:Cr4+, (32,33) as well as the coexistence of Cr3+ and Cr4+ in MgSiO4, (34,35) and CaGa4O. (36,37) Recently, Wang et al. (18) demonstrated the potential application of Sc2O3:Cr3+,Cr4+ phosphor as temperature sensors. By codoping Yb3+ ions, they achieved a continuous NIR ultra-broadband emission spectrum from 650 to 1600 nm. This development opens up possibilities for utilizing these phosphors in spectral analysis applications.
Scandium oxide (Sc2O3) holds promising potential as a host material for the incorporation of luminescent dopants. Sc2O3 is regarded as a rare-earth sesquioxide because of similar chemical behavior. (38) Until now, researchers have identified five distinct structural modifications in rare-earth sesquioxides. (39−41) Three phases are designated as follows: hexagonal phase with space group P3m1 and seven-coordinated cations (A phase); monoclinic phase with space group C2/m, where each cation is surrounded by six or seven anions (B phase); and cubic phase with space group Ia3̅ with six-coordinated cations (C phase). These phases are observed at room temperatures and atmospheric pressures. The two other phases are formed at very high temperatures: H phase (hexagonal, P63/mmc) and X phase (cubic, Im3̅m). (42) Yusa et al. noted that under high pressures and temperatures the B phase of Sc2O3 undergoes the phase transition to the Gd2S3 structure. (43) The irreversible phase transition from cubic space group Ia3̅ (referred to as the C phase) to monoclinic space group C2/m (B phase) is calculated to occur at 15 GPa. The same research group has experimentally shown it to occur at 32 GPa. (44) Other experimental studies show that phase transitions occur at 25–28 GPa. (45) Yusa et al. (43) found that the corundum phase, not previously seen in Sc2O3, can only be synthesized as a recovered product from the Gd2S3 phase.
Introducing Cr3+ ions into the Sc2O3 matrix leads to the generation of a broad emission band within the NIR-I region. Furthermore, the presence of Cr4+ ions in the matrix also gives rise to emission within the NIR-II region. Several studies have investigated the luminescence properties of pure Sc2O3:Cr3+. (46−48) However, there is a lack of research specifically focusing on mixed-ion materials. The modification of the matrix through cation substitution enables the tuning of emission characteristics to meet the specific application requirements.
In the previous study, we investigated the new Ga2(1-y)Sc2yO3 materials synthesized in the monoclinic crystal structure with the space group C2/m. (49) We showed that y could reach around 0.44 and Sc could not be doped more in the structure. In this study, we demonstrate that even though Sc cannot be doped in the Ga2O3 structure for more than 44%, it is still possible to incorporate Ga into the Sc2O3 structure.
Understanding the luminescence mechanisms of Sc2O3 codoped with Cr3+ is essential for further optimizing its luminescence properties for commercial applications. This study focuses on investigating the luminescence properties of the Sc2(1–x)Ga2xO3:Cr3+/4+ solid solution. We will examine the thermal analysis of this material and explore the influence of the crystal field effects on the optical properties of Cr3+ and Cr4+ ions.

Results and Discussion

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Structural Analyses

The synchrotron X-ray powder diffraction of Sc2(1–x)Ga2xO3:Cr3+/4+ (SGOC) with x = 0–0.20 is characterized, as shown in Figure 1a. No impurity peaks are found for x = 0–0.05, and only slight impurity peaks are detected for x = 0.10. By contrast, more impurities could be seen for x = 0.15–0.20, as shown by the asterisk symbol in Figure 1a. The impurity can be attributed to Ga1.17Sc0.83O3 because the position of the impurity peak aligns with the standard peak position of the Ga1.17Sc0.83O3 phase attracted from ICSD-422271. For the x = 0–0.10 samples, the diffraction peaks shift toward higher angles because the ionic radius of Sc3+ (0.745 Å; CN = 6) (CN denotes coordinated number) is bigger than that of Ga3+ (0.62 Å; CN = 6). (50) Notably, the diffraction peak position only shifts to higher angles for x = 0–0.10 samples, and it does not shift for x = 0.10–0.20, indicating that Ga3+ ions cannot be incorporated into the Sc2O3 structure anymore. The structural information and standard XRD diffraction patterns of Sc2O3 and Ga1.17Sc0.83O3 are extracted from the crystallographic information framework (CIF) with COD-1008928 and ICSD-422271, respectively. Ga1.17Sc0.83O3 possesses the same structure as Ga2O3, as shown in Figure S1 in the Supporting Information (SI).

Figure 1

Figure 1. (a) XRD patterns of the SGOC with x = 0–0.2. (b) Crystal structure of Sc2O3. (c) Coordinated environment of Sc1 and Sc2 sites in Sc2O3. (d) Rietveld refinement of the SGOC with x = 0. (e) Lattice parameters of SGOC with x = 0–0.2. The asterisk symbol in (a) indicates the diffraction peaks from the Ga1.17Sc0.83O3 impurity phase.

The crystal structure of Sc2O3 is shown in Figure 1b. Sc2O3 crystallizes in a cubic structure with the space group of Ia3̅ (no. 206). There are two Sc3+ sites in the structure, and both are coordinated by six O2– ions to form 6-fold polyhedrons, as shown in Figure 1c. The detailed coordination environment of Sc1 and Sc2 in [ScO6] polyhedrons is shown in Table S1 in SI. The bond lengths of the six Sc1–O1 bonds are identical and equal to 2.10314 Å. On the other hand, the six Sc2–O1 bonds are different, with an average bond length of 2.0978 Å. The distortion index can be utilized to realize the bond length deviation by the following formula (51):
D=1ni=1n|lilav|lav
(1)
where D is the distortion index; lav is the average bond length; li is the bond length between the center ion and ith coordinated ions; n is the number of the coordinated ions. The calculated D values of Sc1 and Sc2 sites equal 0 and 0.00604, respectively. Despite the small D of the Sc2 site, the coordinated environment between the Sc1 and Sc2 sites is different. As shown in Table S1 in the SI, four O2– ions are in the same plane, while the other two O2– ions are offset from the vertical direction for the Sc1 site. On the contrary, despite the 6-fold coordination, the coordinated environment of the Sc2 site differs from the regular octahedron coordination, which is more distorted. One cannot observe four O2– ions in the same plane around the Sc2 site. To quantify the degree of distortion in bond angles, the bond angle variance can be calculated by the following equation (52):
σ2=1m1i=1m(φiφ0)2
(2)
where σ2 is the bond angle variance; m is the number of bond angles, which equals the number of faces ×3/2; φi is the ith bond angle; and φ0 is the ideal bond angle for the selected polyhedron, which equals 90° for an octahedron. σ2 calculated for Sc1 and Sc2 are 180.5362 and 246.4595 (degree), (2) respectively, indicating that the coordinated environment of Sc2 is much more distorted than that of Sc1. Although the bond angle variance in the Sc1 site is less than the Sc2 site, it is still much more than most of the octahedral coordination. Take the Ga2O3 and Ga1.17Sc0.83O3 structures as examples, the bond angle variances calculated from their CIF are 41.9175 and 48.2954, respectively. This result indicates that the [CrO6] polyhedrons in Sc2O3 will still be more distorted than [CrO6] polyhedrons in Ga2O3 and Ga1.17Sc0.83O3. The bond angle variance is beneficial in analyzing the distortion behavior and compensates for the disadvantage of the distortion index, which considers the bond length. One should note that the electronic transition for the Cr ion belongs to dd transitions, for which the bond angles could potentially affect the luminescent properties.
To further understand the structural properties, the Rietveld refinements of SGOC with x = 0–0.20 are conducted, as shown in Figures 1d and S2 in the SI. The refined parameters, atomic positions, occupancies, and displacement parameters of SGOC with x = 0–0.20 are shown in Tables S2 and S3. The experimental data fit well with the Sc2(1–x)Ga2xO3 patterns. As expected, the lattice parameter, a, decreases in x = 0–0.10 and stays nearly constant in x = 0.10–0.20, as shown in Figure 1e. In our previous study, we have achieved the pure phase of Ga2(1–y)Sc2yO3:Cr3+ from the Ga2O3 structure as the Sc3+/Ga3+ ratio is lower than 44%, as shown in Figure S3 in SI. (49) By contrast, in this study, we can obtain the pure phase of Sc2(1–x)Ga2xO3 from the Sc2O3 structure as the Sc3+/Ga3+ ratio is higher than 94%. Furthermore, there is no significant preference for Ga3+ ions when incorporated into the Sc1 and Sc2 sites, as shown in Table S3.

Photoluminescence Analysis

To examine the basic optical properties, room temperature (RT) photoluminescence excitation (PLE) and photoluminescence (PL) spectra of SGOC for x = 0–0.20 are shown in Figure 2a,b, respectively. Upon NIR emission observation at 800 nm, the PLE spectra consist of two excitation bands typical for Cr3+ ions in 6-fold octahedral coordination. The high energy band that peaked at 470 nm corresponds to 4A24T1 transition, while the lower energy band that peaked at 660 nm is related to the 4A24T2 transitions of Cr3+ ions. Upon excitation at 473 nm, a broadband emission extending from 650 to 1100 nm (NIR-I) with a maximum at 830 nm is observed (Figure 2b). This emission corresponds to the 4T24A2 spin-allowed transition of Cr3+ ions in a weak crystal field. Excitation at 450 nm effectively stimulates NIR-I Cr3+ emission, suggesting its potential application in NIR-LEDs. Additionally, the less intense band appears at a longer wavelength (NIR-II), 1100–1600 nm, as shown in Figure S4a in SI. This emission can also be excited by 980 nm, and the corresponding emission spectra are shown in Figure 2b with a dashed line. Kück et al. (47) observed identical emission spectra for Sc2O3:Cr3+. The RT full width at half-maximum (fwhm) values for Cr3+ and Cr4+ ions are 2402 and 2075 cm–1, respectively. Figure 2a shows the excitation spectra of the NIR-II emission observation at 1300 nm (represented by the dashed line). The two excitation bands at 470 and 660 nm correspond to the excitation of Cr3+ ions, indicating energy transfer between NIR-I (Cr3+) and NIR-II (Cr4+). Two additional overlapped bands, extending from 650 to 1050 nm, are observed in the NIR-II excitation spectra. Although most papers show that Cr4+ ions prefer to occupy tetrahedral sites, (30,32,34,37,53) some studies (54) show that Cr4+ can also occupy the octahedrally coordinated sites. Both 6-fold coordinated Sc1 and Sc2 sites are distorted, but the distortion of Sc2 sites is much more significant. We can consider the 6-fold coordinated Sc1 site as a distorted octahedron. In contrast, the Sc2 site cannot be regarded as a typical octahedron, and the Cr4+ ions may occupy this strongly distorted 6-fold coordinated Sc2 site. The most likely NIR-II emission is related to the Cr4+ ions in disordered 6-fold coordination. According to the Tanabe-Sugano diagram for d2 electron configuration, (55,56) 650–1050 nm excitation bands can be attributed to the 3T13T2 and 3T13A2 (or 3T13T1) transitions of Cr4+ ions. Hence, the emission extending from 1100–1600 nm with a maximum of 1300 nm corresponds to the 3T23T1 emission of Cr4+.

Figure 2

Figure 2. Room temperature (a) PLE spectra upon Cr3+ and Cr4+ observation at 800 and 1300 nm, respectively, and (b) normalized PL spectra upon excitation at 473 (Cr3+) and 980 nm (direct Cr4+ excitation). (c) Unnormalized room temperature PL spectra upon excitation at 473 nm. (d) Arbitral emission intensity of Cr3+ (dots) and Cr4+ (diamonds) emission. (e,f) Evidence of the energy transfer mechanism.

Figure S4b shows the x-dependent position of the 4A24T1,4T2, and 4T24A2 transitions of Cr3+ and 3T23T1 of Cr4+ in SGOC (Sc2(1–x)Ga2xO3:Cr3+/4+). A minimal blue shift of the broadband emission of Cr3+ and Cr4+ ions and excitation bands of Cr3+ ions is observed with an increase in the x value of up to 0.10. The emission band shift should be interpreted based on the crystal field theory, assuming that incorporating smaller Ga3+ in place of Sc3+ ions results in an increase in the crystal field strength Dq in the vicinity of Cr3+/Cr4+ ions. This leads to an increase in the energy of the 4T1 and 4T2 states with respect to the 4A2 ground state for Cr3+ ions. Similarly, for Cr4+ ions, the energy of 3T2 and 3A2 (or 3T1) increases with respect to the 3T1 ground state. In other words, this shift is due to the increase in the crystal field with increasing Ga concentration, which is also confirmed by XRD. The XRD measurements clearly demonstrate that Ga3+ ions are incorporated into the crystal structure only up to x = 0.10. Consequently, the increase in crystal field strength is limited to x = 0.10, and there is no further change for higher x values. As a result, the shift in emission and excitation bands is solely observable up to x = 0.10. The crystal field parameter Dq and Racah parameters B and C for Cr3+ are discussed in SI.
Figure 2c shows arbitral emission intensity upon excitation at 473 nm, while Figure 2d shows the integrated emission intensities of Cr3+ and Cr4+ for different x concentrations upon excitation at 473 and 980 nm, respectively. The intensity of Cr3+ emission increases significantly (around 77 times) from x = 0 to x = 0.20. In the case of Cr4+ emission, the intensity hardly changes and only slightly decreases for samples with a higher x concentration. Additionally, the photoluminescence spectra at 100 K in Figure S4c in SI show that the relative intensity of Cr3+ to Cr4+ increases with x. The ionic radius of Sc3+ (0.745 Å) is indeed bigger than that of Cr3+ (0.615 Å). Additionally, the ionic radius of Cr3+ is similar to that of Ga3+ (0.62 Å). These variations in ionic radii lead to a decrease in the average size of the octahedra, potentially facilitating the doping of Cr3+ ions. As a result, in a Ga3+-doped sample, Cr3+ may exhibit a higher likelihood of occupying these sites, which can contribute to an increase in the intensity of luminescence.
As shown in Figure S4d, the decay profiles of Cr3+ luminescence are multiexponential for materials without Ga (x = 0) and for low x concentration, and they start to become near single-exponential for materials with higher x (Ga) concentration. The opposite behavior could be expected: increasing multiexponential behavior with increasing x due to the different surroundings around the Cr3+ ion. The observed effect on the luminescence kinetics suggests a decrease in energy transfer with increasing x. The increase in the intensity of Cr3+ luminescence in a Ga3+-doped sample can indeed lead to a situation where the observability of energy transfer decreases in the decay profile. This may suggest that the energy transfer remains consistent across all samples, as evidenced by only slight shifts in the excitation and emission spectra, which should not significantly change the energy transfer efficiency. The heightened prominence of Cr3+ emissions can give the impression of a more single-exponential decay even when multiple energy transfer pathways might be involved. This effect arises because the contribution of the energy transfer process to the decay profile becomes relatively weaker in the presence of stronger Cr3+ luminescence.
Because of the multiexponential behavior, the average decay time was calculated for all studied materials using the equation:
τav=tI(t)dtI(t)dt
(3)
where I(t) is the luminescence intensity at time t. The calculated average decay times of Cr3+ ions are shown in Figure S4e. The average decay time increases with increasing x, ranging from approximately 17 to 37 μs. The decay profiles of Cr4+ shown in Figure S4f in the SI are relatively similar for all samples. The calculated average decay time using eq 3 is approximately 0.42 μs, 2 orders of magnitude shorter than the decay time of Cr3+ ions.
For a closer look at the energy transfer mechanism, the Cr4+ PLE spectra and the Cr3+ PL spectra are presented in Figure 2e. It can be observed that the Cr3+4T24A2 emission overlaps with the Cr4+ excitation bands. This overlapping implies the potential for energy transfer from the lowest excited 4T2 state of the Cr3+ ion to the 3T2 or 3T2/3A2 excited states of the Cr4+ ions. Consequently, the NIR-II luminescence from 3T2 to 3T1 of Cr4+ is observed as shown in Figure 2f.

Oxidation State of the Chromium Ions

The oxidation state of the activators will significantly affect the luminescent properties. To determine the oxidation state of the activators in the bulk powder materials, the Cr K-edge X-ray absorption near edge structure (XANES) spectra of the SGOC with x = 0–0.20 are measured, as shown in Figure 3a. All the absorption edges of x = 0–0.20 samples are close to the standard patterns of Cr3+ and Cr4+, while they differ from the standard patterns of Cr6+. This effect reveals the possibility of Cr3+ and Cr4+ coexisting in the SGOC phosphors. Besides, there is no intense pre-edge peak at around 5,993 eV, proving the lack of Cr6+ in the materials. On the other hand, the peak shape of x = 0–0.10 samples of peak maximum at around 6,007 eV is similar, while the ones of x = 0.15–0.20 samples are different. This result indicates that Cr may exist in Ga1.17Sc0.83O3 and contribute to the XANES spectra when x is higher than 0.15. Furthermore, the Cr K-edge k2-weighted Fourier transform of extended X-ray absorption fine structure (EXAFS) spectra of the SGOC with x = 0–0.20 is analyzed, as shown in Figure 3b. The oscillation patterns between them are roughly similar; however, one can still observe the subtle change in oscillation patterns for x = 0.15–0.20 samples, supporting the hypothesis that the Cr in Ga1.17Sc0.83O3 may contribute to XANES and EXAFS.

Figure 3

Figure 3. Cr K-edge XANES spectra and (b) Cr K-edge k2-weighted Fourier transforms of EXAFS spectra.

Temperature-Dependent Photoluminescence

Measurements were conducted while the temperature was varied to enhance comprehension of both radiative and nonradiative processes. Due to the presence of impurities in x = 0.15–0.20 samples, the subsequent analysis of luminescent property in this study will mainly focus on the x = 0 and 0.10 samples.
Figure 4a,b shows the temperature-dependent steady-state PL emission of Cr3+ ions upon excitation at 473 nm and Cr4+ ions upon excitation at 980 nm for x = 0.10, respectively. To mitigate the overlap of Cr3+ emission with Cr4+ emission, we decided to investigate the temperature dependence of the emission intensity of Cr4+ under near-infrared 980 nm excitation. The measurements were performed in the temperature range of 100–450 K. The temperature-dependent luminescence of Cr3+ and Cr4+ for x = 0 is shown in Figure S5a,b, respectively. For both samples, emission bands become broadened with increasing temperature. The temperature dependence fwhm of the Cr3+ (represented by red dots) and Cr4+ (represented by green dots) emissions for x = 0.10 is shown in Figure 4c. For temperatures exceeding 400 K, the emission intensity becomes too weak to accurately determine the fwhm of the Cr4+ emission. The fwhm value increases with an increasing temperature. We have utilized the hyperbolic cotangent law describing the temperature dependence of the emission band (fwhm) given by equation: (57)
fwhm(T)=22ln2Sℏωcothω2kT
(4)
where T is temperature, S is the Huang–Rhys parameter, ℏω is the energy of effective phonon, and k is Boltzmann’s constant.

Figure 4

Figure 4. Temperature dependence of the luminescence of Cr3+ and Cr4+ in SGOC. The temperature-dependent emission spectra are (a) upon excitation at 473 nm for Cr3+ and (b) at 980 nm for Cr4+ for x = 0.10. (c) Temperature dependence of fwhm for x = 0 and 0.10. (d) Total emission intensity of Cr3+ and Cr4+ for x = 0 and 0.10. The purple circles and green dots represent Cr4+ in x = 0 and x = 0.10, respectively. The cyan circles and red dots represent Cr3+ in x = 0 and x = 0.10, respectively. Solid lines represent the fitting to the experimental data using formulas (4 and 5). Configuration coordinate diagrams for the (e) Cr3+ and (f) Cr4+ ions for x = 0.10.

From the fitting, we have obtained the value of the Huang–Rhys factor for Cr3+ and Cr4+, S = 6.8 ± 0.2 and 3.6 ± 0.1, respectively, and effective phonon energy, ℏω = 310 ± 6 cm–1 for Cr3+, and 402 ± 7 cm–1 for Cr4+. Quantity Sℏω is the energy of electron lattice relaxation whose calculated value equals 2106 ± 40 and 1447 ± 25 cm–1 for Cr3+ and Cr4+, respectively. The magnitude of the electron–lattice coupling can be described by the Stokes shift, which is equal to 2Sℏω. This parameter describes the energy difference between PLE and PL maximum bands (indicated by arrows in Figure 2a,b, cyan for Cr3+ and magenta for Cr4+). The Sℏω calculated from PLE and PL spectra for Cr3+ is 1715 ± 300 cm–1, which is smaller than those calculated from temperature-dependent fwhm. In the case of Cr4+, Sℏω is equal to 1415 ± 240 cm–1, which agrees with those obtained from temperature-dependent fwhm. The obtained parameters allow us to construct the one-dimensional configurational coordinate diagrams of the ground state (represented by black parabola) and excited states (represented by color parabolas) of Cr3+ and Cr4+ presented in Figure 4e,f. The Sℏω values were taken from the temperature-dependent fwhm. It should be noted that the results discussed above refer to the x = 0.10 sample. However, the relatively small changes observed in the PLE and PL spectra suggest that similar diagrams would be accepted for the other considered samples.
Figure 4d shows the temperature-dependent Cr3+ and Cr4+ emission intensity of x = 0 (empty dots) and 0.10 (filed dots) samples. In both samples, the emission intensity of Cr3+ increases to 275 K and then decreases at higher temperatures. In contrast, for Cr4+, the emission begins to diminish significantly above 100 K. The slight increase in Cr3+ emission intensity can be interpreted as an increase in the absorption coefficient, which is related to the increasing phonon population. (58) The experimental data of temperature dependence of Cr3+ emission intensity were fitted in the temperature range ≥275 K, while for Cr4+ in all temperature ranges. The following formula, inclusive of the single deexcitation process, was used to describe the temperature-dependent intensity behavior:
I(T)=I(0)1+Aexp(EAkT)
(5)
where I0 is the PL intensity at 0 K, EA is the activation energy, and A is the relative probability of the nonradiative deexcitation processes. The fitting curves are represented as solid lines in Figure 4d. The obtained parameters for x = 0 and 0.10 are as follows: A = 4070 ± 900; 3270 ± 1760, and EA = 2540 ± 70 cm–1; 2760 ± 170 cm–1, respectively. The activation energy corresponds to nonradiative quenching of Cr3+ luminescence. The activation energy EA and parameter A for Cr4+ ions (roughly the same for both samples) are 530 ± 45 cm–1 and 150 ± 50, respectively. This activation energy represents the nonradiative quenching of Cr4+ luminescence, which is approximately five times smaller than that of Cr3+. Considering the configuration diagrams, we can certainly say that the nonradiative processes are not solely attributed to the thermally induced nonradiative relaxation process directly from the excited state to the ground state: 4T24A2 transition in the case of Cr3+ and 3T23T1 transition for Cr4+. The intersections of the ground and excited states, represented by parabolas, occur at much higher energies for Cr3+ (∼18,000 cm–1) and Cr4+(∼9000 cm–1), which are much greater than that obtained from fitting the temperature dependence of intensity (2540–2760 cm–1).
Figure S6 shows the temperature dependence of luminescence kinetics in the μs range. Figure S6a,b shows the luminescence decay of Cr3+ emission upon excitation at 470 nm for x = 0 and 0.10 samples, respectively. Figure S6c shows the luminescence decay time of Cr4+ emission upon excitation at 980 nm. Due to the nonexponential decay, the average decay time was calculated using eq 3. Figure S6d,e shows the temperature dependence of the average decay time of Cr3+ and Cr4+ luminescence. The decay time values for Cr3+ at 10 K for x = 0 and 0.10 are 27 and 37 μs, respectively. For Cr4+, the decay time at 100 K is 1.34 ms. The decay time of Cr3+ is typical of Cr3+ in weak crystal fields. (49,59,60) Similar decay time of Cr4+ was found in the references. (32) For x = 0.10, the decay times of Cr3+ emissions remain stable up to 300 K and then decrease with increasing temperature. The temperature behavior of decay times aligns with the emission intensity behavior (Figure 4d). In the case of the x = 0 sample, where the energy transfer is more prominent, the decay times decrease slightly up to 300 K, followed by a more rapid decrease. The significant reduction in the decay time is related to nonradiative quenching of Cr3+. The shorter decay time observed at low temperatures for the x = 0 sample is attributed to an energy transfer process. The decrease in the decay time observed for Cr4+ emission is associated with nonradiative quenching. In both cases, the process of luminescence quenching remains unclear. However, we can certainly say that it is not solely attributed to the thermally induced nonradiative relaxation process directly from the excited state to the ground state (parabolas intercrossing). Instead, it could be attributed to either an ionization transition to the conduction band (specifically in the case of Cr3+) or defects or closely lying charge transfer (CT) states. In contrast, for Cr4+, these states are situated deeper within the bandgap, eliminating the possibility of an autoionization process.

Pressure-Dependent Photoluminescence

To further understand the crystal field influence on Cr3+ and Cr4+ ion luminescence in SGOC, high-pressure experiments were conducted. The x = 0.10 sample was selected for further study due to its consistent demonstration of the highest luminescence intensity of Cr3+ ions among all of the samples containing a pure phase of Sc2O3. RT pressure-dependent PL spectra of Cr3+ and Cr4+ for x = 0.10 are presented in Figure 5a,c, respectively. The excitation wavelength for Cr3+ luminescence was 473 nm, while for Cr4+, it was 980 nm. At atmospheric pressure, only broadband emissions are simultaneously observed for Cr3+ and Cr4+ luminescence. The strong dependence of the 4T2 state of Cr3+ ions on crystal field strength leads to a substantial increase in the energy of the 4T24A2 transition with pressure and a slight decrease in the energy of 2E → 4A2 transition, (24) as shown in the schematic energy structure diagram present in Figure 5e (left panel). For Cr3+ luminescence, the maximum broadband (4T24A2) emission spectra shift toward a shorter wavelength (higher energy). Above 12.3 GPa, the broadband emission disappears, and only narrow line emission is observed. This is explained by the crossing of two energy levels: 4T2 (black line) and 2E (blue line), as shown in Figure 5e, left panel (the energy levels represented by the black line is related to the energy of the 4T2 level reduced by Sℏω, while the dashed line by 2Sℏω). At room temperature, the thermal energy is too low to induce emission from the 4T2 state, and the lowest excited 2E state becomes the only emitting state. A similar effect is described in the references. (61−63) At a pressure of 20.2 GPa, a change in emission spectra is observed. A phase transition likely causes such phenomena. (43−45) It is worth noting that the new phase is metastable and the phase no longer persists when the pressure is released.

Figure 5

Figure 5. Pressure dependence of the luminescence of Cr3+ and Cr4+ in SGOC, x = 0.10. (a) Normalized RT emission spectra at different pressure for Cr3+ emission excited with 473 nm. (b) Cr3+ luminescence after a phase transition. (c) Normalized RT emission spectra at different pressures for Cr4+ emission excited with 980 nm. (d) Pressure-dependent emission shift in the energy scale. (e) Schematic pressure dependence of the selected energy levels of the Cr3+ and Cr4+ ions before phase transition. Black solid and dashed gray lines are related to the energy of the 4T2 level reduced by Sℏω and 2Sℏω, respectively.

The Cr3+ emission in the new phase consists of seven well-resolved emission lines at 681.7, 691.9, 703.0, 713.3, 725.1, 737.5, and 746.6 nm, which are clearly shown in Figure 5b. The line at 713.3 is likely the zero phonon line (ZPL), while the lines at shorter wavelengths are anti-Stokes phonon sidebands marked as υ1’- υ3’, and the line at longer wavelengths (lower energies) are Stokes phonon sidebands marked as υ1- υ3. Surprisingly, we obtained well-resolved emission spectra at RT and high pressures after the phase transition. That emission spectrum is unusual for Cr3+ ions and can be found mostly for Mn4+-doped fluorides (11,64) but not found for Cr3+ emission so far. The most similar Cr3+ spectrum can be found in the high symmetric structure of ZnGa2O4:Cr3+ (65) and K2NaGaF6:Cr3+, (66) but it is still far from what is observed in this paper. This suggests that Cr3+ in the new phase is in a high-symmetry environment.
As mentioned in the Introduction section, there are three main phases found in rare-earth sesquioxide: hexagonal (P3m1); monoclinic, (C2/m); and cubic (Ia3̅). (39−41) Another structure of sesquioxide found in the literature is a corundum-like structure (trigonal, Rc). (43) The two other phases hexagonal (P63/mmc) and cubic (Im3̅m) are formed at very high temperatures. (42)
The Sc2(1–x)Ga2xO3:Cr3+/4+ sample synthesized in this work adopts a cubic structure, with a space group Ia3̅. Among the listed structures, only a monoclinic arrangement with the space group C2/m, featuring either six or seven-coordinated cation sites, or a trigonal structure (Rc) with six-coordinated cation sites, is the viable candidate for the obtained phases. In the other structures, the requisite 6-fold coordination sites are where the Cr3+ ions can be located. Interestingly, the luminescence behavior of Cr3+ in similar materials (such as β-Ga2–xScxO3:Cr3+ with a monoclinic C2/m structure) and corundum-like structures is reported in the literature. (8,24,67) However, these materials exhibit emissions different from those observed in this study. This discrepancy underscores that the exact origin of unusual Cr3+ emission following phase transition remains not fully understood.
The energies of the 4T2 and 2E transition to the 4A2 ground state of Cr3+ versus pressure before and after the phase transition are presented in Figure 5d. As pressure increases, the ZPL lines shift toward a longer wavelength (lower energy). The values of pressure shifts before phase transition were estimated for the ZPL (2E → 4A2) and broadband emission (4T24A2) and are −5 ± 2 and 126 ± 1 cm–1/GPa, respectively, which are typical for the pressure shifts of these transitions. (24,59,61−63,68) The pressure shift of the Stokes and anti-Stokes phonons of the Cr3+ emission of the new high-pressure phase is shown in Figure S7. It is seen that the pressure shift is roughly the same for all emission lines. The ZPL shift rate after the phase transition is estimated to be −12.3 ± 0.1 cm–1/GPa.
The schematic energy structure diagram for Cr4+ ions is presented in Figure 5e (right panel). The pronounced sensitivity of the 3T2 state of Cr4+ ions to the crystal field strength results in a significant rise in the energy of the 3T24T1 transition under pressure, along with a minor reduction in the energy of the 1E → 4T1 transition, similar to Cr3+ ions. For Cr4+ luminescence, a linear shift of the broadband emission toward higher energies is observed with increasing pressure. The calculated pressure shift is presented in Figure 5d. It is worth noting that only a few studies in the literature have conducted high-pressure investigations on NIR Cr4+ emission. (31,33,35) The linear shift of Cr4+ is estimated to be 83 ± 3 and 61 ± 6 cm–1/GPa before and after the phase transition, respectively. Although we conducted a high-pressure experiment up to 36 GPa, we did not reach the pressure value and observed the crossover of the 3T2 and 1E states for Cr4+ in RT. Although the schematic energy diagram indicates a crossing between 3T1 and 1E states around 20 GPa, as shown in Figure 5e, this phenomenon is not observed in RT pressure dependence of emission spectra. Moreover, as pressure increases further, a phase transition takes place. It is important to note that the schematic diagram shown in Figure 5e will no longer accurately represent the energy diagram of the sample in the new phase.
Figure S8a in the SI shows the pressure-dependent decay profiles of Cr3+ luminescence up to 25 GPa and upon excitation at 473 nm. The pressure-dependent decay profiles were taken from the whole emission range (taken from the maximum of the luminescence band, they show a similar trend). The decay profiles are multiexponential, and the average decay times τav were calculated using eq 3. The calculated decay time values are presented in Figure S8b. Pressure-induced increase of crystal field strength causes an increase in the energetic separation of 4T2 and 2E excited states as shown in Figure 5e, lowering the thermal occupation of the higher 4T2. Since the thermal occupation of the 4T2 state with μs lifetime affects the adequate decay time of the 2E → 4A2 emission, the increase of pressure leads to rapid elongation of the decay time of luminescence.

Conclusions

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A series of new Sc2(1–x)Ga2xO3:Cr3+/4+ materials with x = 0–0.20 were synthesized, exhibiting broadband near-infrared (NIR-I and NIR-II) emission. X-ray powder diffraction reveals the absence of impurity peaks for x = 0–0.05. The diffraction peak position shift toward higher angles was observed for x = 0–0.10 indicating the incorporation of Ga3+ ions into the Sc2O3 structure. However, no further shifts were observed for x = 0.10–0.20, suggesting that Ga3+ could no longer be incorporated into the Sc2O3 structure. In a previous study, the pure phase of Ga2(1–y)Sc2yO3:Cr3+/4+ was achieved when the Sc3+/Ga3+ ratio was lower than 44%, originating from the Ga2O3 structure. Conversely, the pure phase of Sc2(1–x)Ga2xO3 was obtained from the Sc2O3 structure when the Sc3+/Ga3+ ratio exceeded 94%. The crystal structure of Sc2(1–x)Ga2xO3 consists of two 6-fold coordinated Sc3+ sites (Sc1 and Sc2), both exhibiting distortion, but the distortion of Sc2 sites is much more significant. Excitation at 450 nm effectively stimulates the studied phosphors, suggesting their potential application in NIR-LEDs. Under 490 nm excitation, Sc2(1–x)Ga2xO3:Cr3+/4+ demonstrates an ultra-broadband NIR emission band ranging from 650 to 1100 nm and 1100 to 1600 nm, originating from Cr3+ and Cr4+ ions, respectively, matching the NIR-I and NIR-II regions. The RT fwhm value for Cr3+ is 2402 cm–1, while for Cr4+ ions, it is 2075 cm–1. The strong distortion of the 6-fold coordinated Sc2 site suggests that Cr4+ ions may occupy this site. The intensity of Cr3+ emission increases significantly (around 77 times) from x = 0 to x = 0.20. This finding suggests the positive impact of Ga3+ on the enhancement of the luminescent properties of the material. Energy transfer between Cr3+ and Cr4+ ions occurs in the studied materials. Taking into account the configuration diagrams presented in this paper, we can certainly say that the nonradiative processes do not result from the thermally induced nonradiative relaxation process directly from the excited state 4T2 to the ground state 4A2. Instead, these processes could potentially be ascribed to either an ionization transition to the conduction band (specifically in the case of Cr3+) or the presence of defects or closely lying charge transfer (CT) states. Furthermore, a phase transition is observed at a pressure of 20.2 GPa. The emission spectra obtained after phase transition exhibit high resolution at high pressures, indicating that Cr3+ in the new phase exists in a high-symmetry environment. That emission spectrum is unusual for Cr3+ ions, and the origin of Cr3+ emission following the phase transition remains not fully understood. Additionally, we present the pressure-induced shift of the NIR Cr4+ luminescence in Sc2(1–x)Ga2xO3:Cr3+/4+. The linear shifts are estimated to be 83 ± 3 cm–1/GPa and 61 ± 6 cm–1/GPa before and after phase transition, respectively.

Experimental Section

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Gallium oxide (Ga2O3, 99.99%), scandium oxide (Sc2O3, 99.99%), and chromium oxide (Cr2O3, 99.99%) were purchased from Gredmann. To prepare the Sc2(1–x)Ga2xO3:Cr3+ samples, all the precursors were stoichiometrically weighed and mixed with an agate mortar for 30 min. The mixing precursors were then poured into alumina crucibles and placed in a muffle furnace. Then, all the samples were heated to 1200 °C for 5 h, with a heating and cooling rate of 5 °C/min. After the samples were cooled to room temperature, they were ground, and the final products were obtained.

Supporting Information

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The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.chemmater.3c02466.

  • Characterization; crystal structure; X-ray diffraction; Rietveld refinement; photoluminescence; and decay time (PDF)

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Author Information

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  • Corresponding Authors
  • Authors
    • Natalia Majewska - Institute of Experimental Physics, Faculty of Mathematics, Physics and Informatics, University of Gdansk, Wita Stwosza 57, 80-308 Gdansk, PolandOrcidhttps://orcid.org/0000-0002-1933-0355
    • Yi-Ting Tsai - Research Center for Applied Sciences, Academia Sinica, Taipei 11529, TaiwanOrcidhttps://orcid.org/0000-0001-6280-3907
    • Xiang-Yun Zeng - Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
  • Notes
    The authors declare no competing financial interest.

Acknowledgments

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This work was financially supported by the National Science Center Poland Grant Opus No. 2018/31/B/ST4/00924 and Preludium No. 2022/45/N/ST3/00576. S. Mahlik acknowledges support from the Foundation for Polish Science (IRAP project, ICTQT, Contract No. 2018/MAB/5, cofinanced by EU within Smart Growth Operational Programme). We thank the synchrotron X-ray characterization support from the National Synchrotron Radiation Research Center (NSRRC, Taiwan) with the beamlines of TPS BL19A1 and TPS BL44A1. M.H. Fang acknowledges support from the National Science and Technology Council of Taiwan (Contract No. 112-2113-M-001-039-MY3).

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  1. Jin Yang, Jianhao Zha, Qinan Mao, Heyi Yang, Lang Pei, Jiasong Zhong. Achieving Thermally Stable YAl3–xGax(BO3)4:Cr3+ Near-Infrared Emitting Phosphors via Chemical Substitution for Plant Growth LEDs. Inorganic Chemistry 2024, Article ASAP.
  2. Longbing Shang, Lingkun Zhang, QianShan Quan, Jun Wen, Chong-Geng Ma, Chang-Kui Duan. Mechanistic Insights into Dual NIR Emission from Cr-Doped Sc2O3 via First-Principles Calculations. Inorganic Chemistry 2024, Article ASAP.

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  • Abstract

    Figure 1

    Figure 1. (a) XRD patterns of the SGOC with x = 0–0.2. (b) Crystal structure of Sc2O3. (c) Coordinated environment of Sc1 and Sc2 sites in Sc2O3. (d) Rietveld refinement of the SGOC with x = 0. (e) Lattice parameters of SGOC with x = 0–0.2. The asterisk symbol in (a) indicates the diffraction peaks from the Ga1.17Sc0.83O3 impurity phase.

    Figure 2

    Figure 2. Room temperature (a) PLE spectra upon Cr3+ and Cr4+ observation at 800 and 1300 nm, respectively, and (b) normalized PL spectra upon excitation at 473 (Cr3+) and 980 nm (direct Cr4+ excitation). (c) Unnormalized room temperature PL spectra upon excitation at 473 nm. (d) Arbitral emission intensity of Cr3+ (dots) and Cr4+ (diamonds) emission. (e,f) Evidence of the energy transfer mechanism.

    Figure 3

    Figure 3. Cr K-edge XANES spectra and (b) Cr K-edge k2-weighted Fourier transforms of EXAFS spectra.

    Figure 4

    Figure 4. Temperature dependence of the luminescence of Cr3+ and Cr4+ in SGOC. The temperature-dependent emission spectra are (a) upon excitation at 473 nm for Cr3+ and (b) at 980 nm for Cr4+ for x = 0.10. (c) Temperature dependence of fwhm for x = 0 and 0.10. (d) Total emission intensity of Cr3+ and Cr4+ for x = 0 and 0.10. The purple circles and green dots represent Cr4+ in x = 0 and x = 0.10, respectively. The cyan circles and red dots represent Cr3+ in x = 0 and x = 0.10, respectively. Solid lines represent the fitting to the experimental data using formulas (4 and 5). Configuration coordinate diagrams for the (e) Cr3+ and (f) Cr4+ ions for x = 0.10.

    Figure 5

    Figure 5. Pressure dependence of the luminescence of Cr3+ and Cr4+ in SGOC, x = 0.10. (a) Normalized RT emission spectra at different pressure for Cr3+ emission excited with 473 nm. (b) Cr3+ luminescence after a phase transition. (c) Normalized RT emission spectra at different pressures for Cr4+ emission excited with 980 nm. (d) Pressure-dependent emission shift in the energy scale. (e) Schematic pressure dependence of the selected energy levels of the Cr3+ and Cr4+ ions before phase transition. Black solid and dashed gray lines are related to the energy of the 4T2 level reduced by Sℏω and 2Sℏω, respectively.

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