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Mechanism of Arsenic Monolayer Doping of Oxide-Free Si(111)

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Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States
Karlsruher Institut für Technologie (KIT), Institut für Funktionelle Grenzflächen (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
*(P.T.) E-mail: [email protected]
Cite this: Chem. Mater. 2016, 28, 7, 1975–1979
Publication Date (Web):March 15, 2016
https://doi.org/10.1021/acs.chemmater.5b04394
Copyright © 2016 American Chemical Society

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    17. Roberto C. Longo, Eric C. Mattson, Abraham Vega, Wilfredo Cabrera, Kyeongjae Cho, Yves Chabal, Peter Thissen. Atomic Mechanism of Arsenic Monolayer Doping on oxide-free Silicon(111). MRS Advances 2016, 1 (33) , 2345-2353. https://doi.org/10.1557/adv.2016.466

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