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Diazaisoindigo-Based Polymers with High-Performance Charge-Transport Properties: From Computational Screening to Experimental Characterization

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Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, China
*E-mail: [email protected]
Cite this: Chem. Mater. 2016, 28, 7, 2209–2218
Publication Date (Web):March 14, 2016
https://doi.org/10.1021/acs.chemmater.6b00154
Copyright © 2016 American Chemical Society
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One of the major challenges confronting organic electronics is the development of high-mobility semiconducting materials, especially n-channel and ambipolar semiconductors. Solution-processable semiconducting polymers have attracted much attention because of their tunable properties and their suitability for the fabrication of large-scale devices. Aza substitution has proven effective in electron-transport small-molecule semiconductors; however, high-performance polymeric semiconductors prepared by aza substitution are still lacking. We started with a computational screening procedure to introduce nitrogen atoms into isoindigo-based polymers and then proceeded with the synthesis and fabrication of field-effect transistors. The resulting 7,7′-diazaisoindigo-based polymers exhibit extensive π conjugation and high crystallinity with hole mobilities exceeding 7 cm2 V–1 s–1 with bottom-gate/bottom-contact configuration and ambipolar transport properties with top-gate/bottom-contact configuration in air. These properties make diazaisoindigo a promising building block for polymeric semiconductors.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.chemmater.6b00154.

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