Etching-Controlled Growth of Graphene by Chemical Vapor Deposition
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† Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
‡ Applied Mechanics Laboratory, Department of Engineering Mechanics, and Center for Nano and Micro Mechanics, Tsinghua University, Beijing 100084, P. R. China
§ University of Chinese Academy of Sciences, Beijing 100049, China
*E-mail: [email protected]
*E-mail: [email protected]
Abstract
Graphene growth and etching are reciprocal processes that can reach a dynamic balance during chemical vapor deposition (CVD). Most commonly, the growth of graphene is the dominate process, while the etching of graphene is a recessive process often neglected during CVD growth of graphene. We show here that through the rational design of low-pressure CVD of graphene in hydrogen-diluted methane and regulation of the flow rate of H2, the etching effect during the growth process of graphene could be prominent and even shows macroscopic selectivity. On this basis, etching-controlled growth and synthesis of graphene with various morphologies from compact to dendritic even to fragmentary have been demonstrated. The morphology–selection mechanism is clarified through phase-field theory based on simulations. This study not only presents an intriguing case for the fundamental mechanism of CVD growth but also provides a facile method for the synthesis of high-quality graphene with trimmed morphologies.
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