AgBiI4 as a Lead-Free Solar Absorber with Potential Application in Photovoltaics
- Harry C. Sansom
- ,
- George F. S. Whitehead
- ,
- Matthew S. Dyer
- ,
- Marco Zanella
- ,
- Troy D. Manning
- ,
- Michael J. Pitcher
- ,
- Thomas J. Whittles
- ,
- Vinod R. Dhanak
- ,
- Jonathan Alaria
- ,
- John B. Claridge
- , and
- Matthew J. Rosseinsky
Abstract

AgBiI4 powder, crystals, and polycrystalline films were synthesized by sealed tube solid state reactions, chemical vapor transport (CVT), and solution processing, respectively, and their structural, optical and electronic properties are reported. The structure of AgBiI4 is based unambiguously upon a cubic close packed iodide sublattice, but it presents an unusual crystallographic problem: we show that the reported structure, a cubic defect-spinel, cannot be distinguished from a metrically cubic layered structure analogous to CdCl2 using either powder or single crystal X-ray crystallography. In addition, we demonstrate the existence a noncubic CdCl2-type polymorph by isolation of nontwinned single crystals. The indirect optical band gap of AgBiI4 is measured to be 1.63(1) eV, comparable to the indirect band gap of 1.69(1) eV measured for BiI3 and smaller than that reported for other bismuth halides, suggesting that structures with a close-packed iodide sublattice may give narrower band gaps than those with perovskite structures. Band edge states closely resemble those of BiI3; however, the p-type nature of AgBiI4 with low carrier concentration is more similar to MAPbI3 than the n-type BiI3. AgBiI4 shows good stability toward the AM1.5 solar spectrum when kept in a sealed environment and is thermally stable below 90 °C.
1 Introduction
2 Experimental Section
2.1 Synthesis Procedures
2.2 Characterization Methods
2.2.1 Structural
2.2.2 Compositional Analysis
2.2.3 Optical and Electronic Properties
2.2.4 X-ray Photoelectron Spectroscopy Measurements
2.2.5 Resistivity and Thermopower
2.2.6 Photostability
2.3 Computational Details
3 Results
3.1 Synthesis and Composition
Figure 1

Figure 1. (a) Quarter of the Bi–Ag–I phase diagram showing SEM EDX compositional measurements of Ag1–3xBi1+xI4 powder (black), polycrystalline film (green), plate crystal with CdCl2 structure (red), and octahedral-faceted crystal (blue) on the Ag1–3xBi1+xI4 charge balance line with previously reported compositions (orange). (b) Dashed zone enlarged around the AgBiI4x = 0 point showing additional octahedral-faceted (blue) and plate (red) crystal measurements. Also shown is the nominal x = 0.07 composition used for sealed tube synthesis (orange). Circles represent average compositions, and hashed areas represent the 1σ statistical spread. Areas labeled A and B are the plate and octahedral-faceted crystals used for the structural study (Section 3.2). Areas labeled 1 and 2 correspond to the polycrystalline films used for absorption coefficient measurements (Section 3.3).
3.2 Structure
Figure 2

Figure 2. PXRD and Rietveld refinements of AgBiI4 synchrotron data for (a) CdCl2-type and (b) defect-spinel structures, with the structures inset. Tick marks in (b) show the absence of expected Bragg intensity due to the increased cell size of the cubic cell.
Figure 3

Figure 3. (a) Reported crystal structure of BiI3, (51) showing its layered structure in which layers of edge-sharing octahedra are occupied by 2/3 Bi3+ cations and 1/3 vacancies and alternate with entirely vacant layers. The iodide packing is hexagonally close-packed (ABA). (b) Cubic defect-spinel structure of AgBiI4 is shown in its trigonal setting, for comparison to BiI3 and the CdCl2 structure. The interstitial octahedral sites are occupied by mixed silver and bismuth in alternating layers of 3/4 and 1/4 occupancy. (c) CdCl2-type structure of AgBiI4 with doubled a and b directions showing layered structure with alternating fully occupied and entirely vacant layers. In both (b) and (c) the iodide packing is cubic close-packed (ABC). The dimensions of a CdCl2 single cell are shown in blue in all panels to show the relationship between the different unit cells.
Figure 4

Figure 4. Reconstructed SCXRD pattern from the ⟨011̅⟩ plane of the Fd3̅m cubic cell. Indexing this pattern to the cubic Fd3̅m cell reveals several allowed Bragg peaks with zero intensity (e.g., the expected [220] reflection is indicated by a green circle and arrow). Alternatively, the pattern can be indexed to two rhombohedral R3̅m twins (red and blue circles), with the [001] axis of the rhombohedral cell aligned along the [111] axis of the cubic cell. Uncircled peaks arise from the rock salt sublattice and are common to all twins. This solution has no zero-intensity allowed Bragg peaks. Note that while two rhombohedral R3̅m twins are required to fit this particular region of reciprocal space, by extension four rhombohedral R3̅m twins are required to fit the full data set.
3.3 Optical and Electronic Properties
Figure 5

Figure 5. (a) UV–visible spectroscopy optical absorbance data for sealed tube synthesized powder (red), polycrystalline films 1 (blue) and 2 (green), and BiI3 powder (black) plotted against the AM1.5 solar spectrum (gray). (69) (b) Tauc plot for indirect band gaps calculated using the Kubelka–Munk function F(R) obtained via diffuse reflectance measurements for the sealed tube synthesized powder (red), polycrystalline films 1 (blue) and film 2 (green), and BiI3 powder (black). (c) Absorption coefficient of films 1 (blue) and 2 (green). The shaded areas in (c) indicate the error limits, derived from the standard deviations of the measured film thicknesses.
Figure 6

Figure 6. (a) XPS spectra of the valence band of pellets of AgBiI4 (red) and BiI3 (black) showing the main Ag 4d contribution is to the bottom of the valence band. DOS calculations for the lowest energy defect-spinel and CdCl2 structures are shown in (b) and (c), respectively.
Figure 7

Figure 7. (a) Seebeck coefficient measured from 210 to 300 K on bulk AgBiI4. (b) Resistivity of bulk AgBiI4 measured from 190 to 300 K.
3.4 Stability
4 Discussion
Figure 8

Figure 8. Halide (green) connectivity (red) is shown for AgBiI4 and the bismuth halide semiconductors with previously reported optical gaps. Bismuth is shown in purple and cations in yellow. BiI3 shows uninterrupted hexagonal close packed iodide sublattice, and both the CdCl2 and defect-spinel structures of AgBiI4 show uninterrupted cubic close packed iodide sublattices. In the double perovskites Cs2AgBiX6 (X = Br, Cl), one-fourth of the anions in the close packed iodide sublattice are replaced by large Cs+ cations, in the perovskite-type structure. The same level of cation substitution is observed in hexagonal iodide layers within (CH3NH3)BiI4, (NH4)3Bi2I9, A3Bi2I9 (A = K, Rb, Cs), and (CH3NH3)2KBiCl6. All compounds with structures where cations replace I– anions within the hexagonal layers have optical gaps above 1.9 eV, (26-30, 32) where those with pure iodide layers have optical gaps of 1.6–1.8 eV.
compound | indirect Tauc (eV) | Direct Tauc (eV) | calculated type | iodide sublattice |
---|---|---|---|---|
BiI3 | 1.67(9) (33) | 1.76 (33) | indirect (33),b | CP |
1.69(1)b | 1.77(1)b | |||
AgBiI4b | 1.63(1) | 1.73(1) | CP | |
AgBi2I7 (34) | 1.66 | 1.87 | indirect | CP |
(CH3NH3)BiI4 (27) | 2.04 | 2.63 | direct | P |
(NH4)3Bi2I9 (28) | 2.04 | direct | P | |
(CH3NH3)2KBiCl6 (26) | 3.04 | 3.37 | indirect | P |
K3Bi2I9 (29) | 2.10 | direct | P | |
Rb3Bi2I9 (29) | 2.10 | direct | P | |
Cs3Bi2I9 (29) | 1.90 | indirect | P | |
Cs2AgBiCl6 (30) | 2.77 | indirect | P | |
Cs2AgBiBr6 (30) | 2.190 | indirect | P |
The most suitable, i.e., smallest, band gaps for single junction photovoltaics are for AgBiI4 and then BiI3, which have uninterrupted CCP and HCP iodide sublattices respectively. Perovskite-type iodide sublattices, which have 1/4 of anion sites replaced by cations, exhibit larger band gaps above 1.90 eV. Abbreviations CP and P stand for close packed and perovskite-type packing, respectively.
Results obtained from this work.
5 Conclusion
Supporting Information
The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.chemmater.6b04135.
Additional data and figures (PDF)
Terms & Conditions
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Acknowledgment
We thank EPSRC for support under EP/N004884 and for a Ph.D. studentship for Harry Sansom. We thank the STFC for access to beam time at Diamond Light Source and ISIS Spallation Source, Dr. C. Murray, Dr. A. Baker, and Prof. C. Tang for assistance at I11, and Dr. D. Fortes and Dr. K. Knight for assistance at HRPD. We also thank Max Birkett, Dr. Laurie Phillips, Dr. Tim Veal, and Dr. Alex Cowan at the Stephenson Institute for Renewable Energy (SIRE), University of Liverpool, U.K., for helpful discussion and use of equipment. Matthew Rosseinsky is a Royal Society Research Professor.
References
This article references 69 other publications.
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- 8Sharenko, A.; Toney, M. F. Relationships between Lead Halide Perovskite Thin-Film Fabrication, Morphology, and Performance in Solar Cells J. Am. Chem. Soc. 2016, 138, 463– 470 DOI: 10.1021/jacs.5b10723Google Scholar8https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XmtFKjtA%253D%253D&md5=92f927297bc19383f00294df8333a571Relationships between Lead Halide Perovskite Thin-Film Fabrication, Morphology, and Performance in Solar CellsSharenko, Alexander; Toney, Michael F.Journal of the American Chemical Society (2016), 138 (2), 463-470CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)A review. Soln.-processed lead halide perovskite thin-film solar cells have achieved power conversion efficiencies comparable to those obtained with several com. photovoltaic technologies in a remarkably short period of time. This rapid rise in device efficiency is largely the result of the development of fabrication protocols capable of producing continuous, smooth perovskite films with micrometer-sized grains. Further developments in film fabrication and morphol. control are necessary, however, in order for perovskite solar cells to reliably and reproducibly approach their thermodn. efficiency limit. This Perspective discusses the fabrication of lead halide perovskite thin films, while highlighting the processing-property-performance relationships that have emerged from the literature, and from this knowledge, suggests future research directions.
- 9Liu, M.; Johnston, M. B.; Snaith, H. J. Efficient Planar Heterojunction Perovskite Solar Cells by Vapour Deposition Nature 2013, 501, 395– 398 DOI: 10.1038/nature12509Google Scholar9https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhsVWrurbE&md5=a434d6ef282dbee9448991f9887261efEfficient planar heterojunction perovskite solar cells by vapour depositionLiu, Mingzhen; Johnston, Michael B.; Snaith, Henry J.Nature (London, United Kingdom) (2013), 501 (7467), 395-398CODEN: NATUAS; ISSN:0028-0836. (Nature Publishing Group)Many different photovoltaic technologies are being developed for large-scale solar energy conversion. The wafer-based 1st-generation photovoltaic devices have been followed by thin-film solid semiconductor absorber layers sandwiched between 2 charge-selective contacts and nanostructured (or mesostructured) solar cells that rely on a distributed heterojunction to generate charge and to transport pos. and neg. charges in spatially sepd. phases. Although many materials have been used in nanostructured devices, the goal of attaining high-efficiency thin-film solar cells in such a way has yet to be achieved. Organometal halide perovskites have recently emerged as a promising material for high-efficiency nanostructured devices. Nanostructuring is not necessary to achieve high efficiencies with this material: a simple planar heterojunction solar cell incorporating vapor-deposited perovskite as the absorbing layer can have solar-to-elec. power conversion efficiencies of over 15 per cent (as measured under simulated full sunlight). Perovskite absorbers can function at the highest efficiencies in simplified device architectures, without the need for complex nanostructures.
- 10Habisreutinger, S. N.; Leijtens, T.; Eperon, G. E.; Stranks, S. D.; Nicholas, R. J.; Snaith, H. J. Carbon Nanotube/Polymer Composites as a Highly Stable Hole Collection Layer in Perovskite Solar Cells Nano Lett. 2014, 14, 5561– 5568 DOI: 10.1021/nl501982bGoogle Scholar10https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXhsFKgu7bO&md5=4ca359c64931ba6e858c5b3e5569747bCarbon Nanotube/Polymer Composites as a Highly Stable Hole Collection Layer in Perovskite Solar CellsHabisreutinger, Severin N.; Leijtens, Tomas; Eperon, Giles E.; Stranks, Samuel D.; Nicholas, Robin J.; Snaith, Henry J.Nano Letters (2014), 14 (10), 5561-5568CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)Org.-inorg. perovskite solar cells have recently emerged at the forefront of photovoltaics research. Power conversion efficiencies have experienced an unprecedented increase to reported values exceeding 19% within just four years. With the focus mainly on efficiency, the aspect of stability has so far not been thoroughly addressed. In this paper, the thermal stability is identified as a fundamental weak point of perovskite solar cells, and an elegant approach is demonstrated to mitigating thermal degrdn. by replacing the org. hole transport material with polymer-functionalized single-walled carbon nanotubes (SWNTs) embedded in an insulating polymer matrix. With this composite structure, JV scanned power-conversion efficiencies are obtained of up to 15.3% with an av. efficiency of 10 ± 2%. Moreover, strong retardation is obsd. in thermal degrdn. as compared to cells employing state-of-the-art org. hole-transporting materials. In addn., the resistance to water ingress is remarkably enhanced. These are crit. developments for achieving long-term stability of high-efficiency perovskite solar cells.
- 11Bag, M.; Renna, L. A.; Adhikari, R. Y.; Karak, S.; Liu, F.; Lahti, P. M.; Russell, T. P.; Tuominen, M. T.; Venkataraman, D. Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer Stability J. Am. Chem. Soc. 2015, 137, 13130– 13137 DOI: 10.1021/jacs.5b08535Google Scholar11https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhsFKru7nM&md5=0ee3245ac65b7d7f11295139ffb6c607Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer StabilityBag, Monojit; Renna, Lawrence A.; Adhikari, Ramesh Y.; Karak, Supravat; Liu, Feng; Lahti, Paul M.; Russell, Thomas P.; Tuominen, Mark T.; Venkataraman, D.Journal of the American Chemical Society (2015), 137 (40), 13130-13137CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)Solar cells fabricated using alkyl ammonium metal halides as light absorbers have the right combination of high power conversion efficiency and ease of fabrication to realize inexpensive but efficient thin film solar cells. However, they degrade under prolonged exposure to sunlight. Herein, we show that this degrdn. is quasi-reversible, and that it can be greatly lessened by simple modifications of the solar cell operating conditions. We studied perovskite devices using electrochem. impedance spectroscopy (EIS) with methylammonium (MA)-, formamidinium (FA)-, and MAxFA1-x lead triiodide as active layers. From variable temp. EIS studies, we found that the diffusion coeff. using MA ions was greater than when using FA ions. Structural studies using powder X-ray diffraction (PXRD) show that for MAPbI3 a structural change and lattice expansion occurs at device operating temps. On the basis of EIS and PXRD studies, we postulate that in MAPbI3 the predominant mechanism of accelerated device degrdn. under sunlight involves thermally activated fast ion transport coupled with a lattice-expanding phase transition, both of which are facilitated by absorption of the IR component of the solar spectrum. Using these findings, we show that the devices show greatly improved operation lifetimes and stability under white-light emitting diodes, or under a solar simulator with an IR cutoff filter or with cooling.
- 12Aristidou, N.; Sanchez-Molina, I.; Chotchuangchutchaval, T.; Brown, M.; Martinez, L.; Rath, T.; Haque, S. A. The Role of Oxygen in the Degradation of Methylammonium Lead Trihalide Perovskite Photoactive Layers Angew. Chem., Int. Ed. 2015, 54, 8208– 8212 DOI: 10.1002/anie.201503153Google Scholar12https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXptFeqsr4%253D&md5=9d2eecabe3032b9dea8f33ef842d2a61The Role of Oxygen in the Degradation of Methylammonium Lead Trihalide Perovskite Photoactive LayersAristidou, Nicholas; Sanchez-Molina, Irene; Chotchuangchutchaval, Thana; Brown, Michael; Martinez, Luis; Rath, Thomas; Haque, Saif A.Angewandte Chemie, International Edition (2015), 54 (28), 8208-8212CODEN: ACIEF5; ISSN:1433-7851. (Wiley-VCH Verlag GmbH & Co. KGaA)In this paper we report on the influence of light and oxygen on the stability of CH3NH3PbI3 perovskite-based photoactive layers. When exposed to both light and dry air the mp-Al2O3/CH3NH3PbI3 photoactive layers rapidly decomp. yielding methylamine, PbI2, and I2 as products. We show that this degrdn. is initiated by the reaction of superoxide (O2-) with the methylammonium moiety of the perovskite absorber. Fluorescent mol. probe studies indicate that the O2- species is generated by the reaction of photoexcited electrons in the perovskite and mol. oxygen. We show that the yield of O2- generation is significantly reduced when the mp-Al2O3 film is replaced with an mp-TiO2 electron extn. and transport layer. The present findings suggest that replacing the methylammonium component in CH3NH3PbI3 to a species without acid protons could improve tolerance to oxygen and enhance stability.
- 13Panda, P. K. Review: Environmental Friendly Lead-Free Piezoelectric Materials J. Mater. Sci. 2009, 44, 5049– 5062 DOI: 10.1007/s10853-009-3643-0Google Scholar13https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXotF2msrY%253D&md5=aa033dbe025b8fdc09c818790372e4faReview: environmental friendly lead-free piezoelectric materialsPanda, P. K.Journal of Materials Science (2009), 44 (19), 5049-5062CODEN: JMTSAS; ISSN:0022-2461. (Springer)A review. Lead zirconate titanate (PZT)-based piezoelec. materials are well known for their excellent piezoelec. properties. However, considering the toxicity of lead and its compds., there is a general awareness for the development of environmental friendly lead-free materials as evidenced from the legislation passed by the European Union to this effect. Several classes of materials are now being considered as potentially attractive alternatives to PZTs for specific applications. In this paper, attempts have been made to review the recent developments on lead-free piezo materials emphasizing on their prepn., structure-property correlation, etc. In this context, perovskite systems such as bismuth sodium titanate, alkali niobates (ANbO3), etc. and non-perovskites such as bismuth layer-structured ferroelecs. are reviewed in detail. From the above study, it is concluded that some lead-free compns. show stable piezoelec. responses even though they do not match the overall performance of PZT. This has been the stimulant for growing research on this subject. This topic is of current interest to the researchers worldwide as evidenced from the large no. of research publications. This has motivated us to come out with a review article with a view that it would give further impetus to the researchers already working in this area and also draw the attention of others.
- 14Stoumpos, C. C.; Malliakas, C. D.; Kanatzidis, M. G. Semiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent Properties Inorg. Chem. 2013, 52, 9019– 9038 DOI: 10.1021/ic401215xGoogle Scholar14https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhtVGqsL3N&md5=94c35d645dcd9770b4097d0bd440269bSemiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent PropertiesStoumpos, Constantinos C.; Malliakas, Christos D.; Kanatzidis, Mercouri G.Inorganic Chemistry (2013), 52 (15), 9019-9038CODEN: INOCAJ; ISSN:0020-1669. (American Chemical Society)A broad org.-inorg. series of hybrid metal iodide perovskites AMI3, where A is the methylammonium (MeNH3+) or formamidinium (HC(NH2)2+) cation and M is Sn (1 and 2) or Pb (3 and 4) are reported. The compds. were prepd. through a variety of synthetic approaches, and the nature of the resulting materials is discussed in terms of their thermal stability and optical and electronic properties. The chem. and phys. properties of these materials strongly depend on the prepn. method. Single crystal x-ray diffraction anal. of 1-4 classifies the compds. in the perovskite structural family. Structural phase transitions were obsd. and studied by temp.-dependent single crystal x-ray diffraction in the 100-400 K range. The charge transport properties of the materials are discussed in conjunction with diffuse reflectance studies in the mid-IR region that display characteristic absorption features. Temp.-dependent studies show a strong dependence of the resistivity as a function of the crystal structure. Optical absorption measurements indicate that 1-4 behave as direct-gap semiconductors with energy band gaps distributed at 1.25-1.75 eV. The compds. exhibit an intense near-IR luminescence (PL) emission in the 700-1000 nm range (1.1-1.7 eV) at room temp. Solid solns. between the Sn and Pb compds. are readily accessible throughout the compn. range. The optical properties such as energy band gap, emission intensity, and wavelength can be readily controlled for the isostructural series of solid solns. MeNH3Sn1-xPbxI3 (5). The charge transport type in these materials was characterized by Seebeck coeff. and Hall-effect measurements. The compds. behave as p- or n-type semiconductors depending on the prepn. method. The samples with the lowest carrier concn. are prepd. from soln. and are n-type; p-type samples can be obtained through solid state reactions exposed in air in a controllable manner. In the case of Sn compds., there is a facile tendency toward oxidn. which causes the materials to be doped with Sn4+ and thus behave as p-type semiconductors displaying metal-like cond. The compds. appear to possess very high estd. electron and hole mobilities that exceed 2000 cm2/(V s) and 300 cm2/(V s), resp., as shown in the case of MeNH3SnI3 (1). The authors also compare the properties of the title hybrid materials with those of the all-inorg. CsSnI3 and CsPbI3 prepd. using identical synthetic methods.
- 15Koh, T. M.; Fu, K.; Fang, Y.; Chen, S.; Sum, T. C.; Mathews, N.; Mhaisalkar, S. G.; Boix, P. P.; Baikie, T. Formamidinium-Containing Metal-Halide: An Alternative Material for Near-IR Absorption Perovskite Solar Cells J. Phys. Chem. C 2014, 118, 16458– 16462 DOI: 10.1021/jp411112kGoogle Scholar15https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvFejtrzO&md5=66986587231dfe5b1e2b4589e83bf677Formamidinium-Containing Metal-Halide: An Alternative Material for Near-IR Absorption Perovskite Solar CellsKoh, Teck Ming; Fu, Kunwu; Fang, Yanan; Chen, Shi; Sum, T. C.; Mathews, Nripan; Mhaisalkar, Subodh G.; Boix, Pablo P.; Baikie, TomJournal of Physical Chemistry C (2014), 118 (30), 16458-16462CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)Solid-state, soln. processed solar-cells based on org.-inorg. Me ammonium lead halide absorbers have achieved efficiencies >15%, which has superseded liq. dye sensitized cells, as well as various thin film-based photovoltaics. This report introduces a new metal-halide perovskite, based on the formamidinium cation (HC-(NH2)2+), that displays a favorable band gap (1.47 eV) and represents a broader absorption compared to previously reported absorbers that contained the methylammonium cation (MeNH3+). The high open-circuit voltage (Voc = 0.97 V) and promising fill-factor (FF = 68.7%) yield an efficiency of 4.3%, which make this material an excellent candidate for this new class of perovskite solar cell. This report also studies the formation of a black trigonal (P3m1) perovskite polymorph and a yellow hexagonal non-perovskite (P63mc) polymorph. Further solar cell development would entail the stabilization of the black trigonal (P3m1) perovskite polymorph over the yellow hexagonal nonperovskite (P63mc) polymorph.
- 16Eperon, G. E.; Stranks, S. D.; Menelaou, C.; Johnston, M. B.; Herz, L. M.; Snaith, H. J. Formamidinium Lead Trihalide: a Broadly Tunable Perovskite for Efficient Planar Heterojunction Solar Cells Energy Environ. Sci. 2014, 7, 982– 988 DOI: 10.1039/c3ee43822hGoogle Scholar16https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXjtlKisLo%253D&md5=d9cfd92daf4fbbb092bfdbe4eed1fba4Formamidinium lead trihalide: a broadly tunable perovskite for efficient planar heterojunction solar cellsEperon, Giles E.; Stranks, Samuel D.; Menelaou, Christopher; Johnston, Michael B.; Herz, Laura M.; Snaith, Henry J.Energy & Environmental Science (2014), 7 (3), 982-988CODEN: EESNBY; ISSN:1754-5706. (Royal Society of Chemistry)Perovskite-based solar cells have attracted significant recent interest, with power conversion efficiencies in excess of 15% already superceding a no. of established thin-film solar cell technologies. Most work has focused on a methylammonium lead trihalide perovskites, with a bandgaps of ∼1.55 eV and greater. Here, we explore the effect of replacing the methylammonium cation in this perovskite, and show that with the slightly larger formamidinium cation, we can synthesize formamidinium lead trihalide perovskites with a bandgap tunable between 1.48 and 2.23 eV. We take the 1.48 eV-bandgap perovskite as most suited for single junction solar cells, and demonstrate long-range electron and hole diffusion lengths in this material, making it suitable for planar heterojunction solar cells. We fabricate such devices, and due to the reduced bandgap we achieve high short-circuit currents of >23 mA cm-2, resulting in power conversion efficiencies of up to 14.2%, the highest efficiency yet for soln. processed planar heterojunction perovskite solar cells. Formamidinium lead triiodide is hence promising as a new candidate for this class of solar cell.
- 17Kulbak, M.; Cahen, D.; Hodes, G. How Important Is the Organic Part of Lead Halide Perovskite Photovoltaic Cells? Efficient CsPbBr3 Cells J. Phys. Chem. Lett. 2015, 6, 2452– 2456 DOI: 10.1021/acs.jpclett.5b00968Google Scholar17https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhtVaksb3I&md5=2c21efab962ecdbecd4dfe43526d22cfHow Important Is the Organic Part of Lead Halide Perovskite Photovoltaic Cells? Efficient CsPbBr3 CellsKulbak, Michael; Cahen, David; Hodes, GaryJournal of Physical Chemistry Letters (2015), 6 (13), 2452-2456CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)Hybrid org.-inorg. lead halide perovskite photovoltaic cells have already surpassed 20% conversion efficiency in the few years that they have been seriously studied. However, many fundamental questions still remain unanswered as to why they are so good. One of these is "Is the org. cation really necessary to obtain high quality cells" In this study, we show that an all-inorg. version of the lead bromide perovskite material works equally well as the org. one, in particular generating the high open circuit voltages that are an important feature of these cells.
- 18Noel, N. K.; Stranks, S. D.; Abate, A.; Wehrenfennig, C.; Guarnera, S.; Haghighirad, A.-A.; Sadhanala, A.; Eperon, G. E.; Pathak, S. K.; Johnston, M. B.; Petrozza, A.; Herz, L. M.; Snaith, H. J. Lead-Free Organic-Inorganic Tin Halide Perovskites for Photovoltaic Applications Energy Environ. Sci. 2014, 7, 3061– 3068 DOI: 10.1039/C4EE01076KGoogle Scholar18https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXht1CltLvI&md5=4006ad5e9f014b5055c710294d3708cdLead-free organic-inorganic tin halide perovskites for photovoltaic applicationsNoel, Nakita K.; Stranks, Samuel D.; Abate, Antonio; Wehrenfennig, Christian; Guarnera, Simone; Haghighirad, Amir-Abbas; Sadhanala, Aditya; Eperon, Giles E.; Pathak, Sandeep K.; Johnston, Michael B.; Petrozza, Annamaria; Herz, Laura M.; Snaith, Henry J.Energy & Environmental Science (2014), 7 (9), 3061-3068CODEN: EESNBY; ISSN:1754-5706. (Royal Society of Chemistry)Already exhibiting solar to elec. power conversion efficiencies of over 17%, org.-inorg. lead halide perovskite solar cells are one of the most promising emerging contenders in the drive to provide a cheap and clean source of energy. One concern however, is the potential toxicol. issue of lead, a key component in the archetypical material. The most likely substitute is tin, which like lead, is also a group 14 metal. While org.-inorg. tin halide perovskites have shown good semiconducting behavior, the instability of tin in its 2+ oxidn. state has thus far proved to be an overwhelming challenge. Here, we report the first completely lead-free, CH3NH3SnI3 perovskite solar cell processed on a mesoporous TiO2 scaffold, reaching efficiencies of over 6% under 1 sun illumination. Remarkably, we achieve open circuit voltages over 0.88 V from a material which has a 1.23 eV band gap.
- 19Baikie, T.; Fang, Y.; Kadro, J. M.; Schreyer, M.; Wei, F.; Mhaisalkar, S. G.; Graetzel, M.; White, T. J. Synthesis and Crystal Chemistry of the Hybrid Perovskite (CH3NH3)PbI3 for Solid-State Sensitised Solar Cell Applications J. Mater. Chem. A 2013, 1, 5628– 5641 DOI: 10.1039/c3ta10518kGoogle Scholar19https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXmtF2isb8%253D&md5=aa26f1e37df912912faed0c8b37f757bSynthesis and crystal chemistry of the hybrid perovskite (CH3NH3)PbI3 for solid-state sensitised solar cell applicationsBaikie, Tom; Fang, Yanan; Kadro, Jeannette M.; Schreyer, Martin; Wei, Fengxia; Mhaisalkar, Subodh G.; Graetzel, Michael; White, Tim J.Journal of Materials Chemistry A: Materials for Energy and Sustainability (2013), 1 (18), 5628-5641CODEN: JMCAET; ISSN:2050-7496. (Royal Society of Chemistry)The hybrid org.-inorg. perovskite (CH3NH3)PbI3 may find application in next generation solid-state sensitized solar cells. Although this material and related perovskites were discovered many decades ago, questions remain concerning their diverse structural chem. and unusual properties. The article presents a review of previous work and provides a detailed description of the prepn., structural characterization and phys. characteristics of (CH3NH3)PbI3. The phase changes exhibited by (CH3NH3)PbI3 have been probed using variable temp. powder and single crystal x-ray diffraction, combined with differential scanning calorimetry, thermogravimetric anal. and phase contrast transmission electron microscopy. The optical band gap for (CH3NH3)PbI3 detd. by UV-visible spectroscopy was compared to values obtained from d.-of-state simulation of the electronic band structure.
- 20Stoumpos, C. C.; Frazer, L.; Clark, D. J.; Kim, Y. S.; Rhim, S. H.; Freeman, A. J.; Ketterson, J. B.; Jang, J. I.; Kanatzidis, M. G. Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties J. Am. Chem. Soc. 2015, 137, 6804– 6819 DOI: 10.1021/jacs.5b01025Google Scholar20https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXotVSntr4%253D&md5=e24612098507e68ca1143b5e805adaa2Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical PropertiesStoumpos, Constantinos C.; Frazer, Laszlo; Clark, Daniel J.; Kim, Yong Soo; Rhim, Sonny H.; Freeman, Arthur J.; Ketterson, John B.; Jang, Joon I.; Kanatzidis, Mercouri G.Journal of the American Chemical Society (2015), 137 (21), 6804-6819CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)The synthesis and properties of the hybrid org./inorg. Ge perovskite compds., AGeI3, are reported (A = Cs, org. cation). The systematic study of this reaction system gave 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compd., methylammonium, MeNH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, Me3NHGeI3 (6), and isopropylammonium, Me2C(H)NH3GeI3 (7) analogs were prepd. The crystal structures of the compds. are classified based on their dimensionality with 1-4 forming 3D perovskite frameworks and 5-7 1D infinite chains. Compds. 1-7, with the exception of compds. 5 (centrosym.) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compds. have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compds. have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). The 2nd harmonic generation (SHG) properties are reported of the compds., which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm2). The 2nd-order nonlinear susceptibility, χ(2)S, is 125.3 ± 10.5 pm/V (1), (161.0 ± 14.5) pm/V (2), 143.0 ± 13.5 pm/V (3), and 57.2 ± 5.5 pm/V (4). First-principles d. functional theory electronic structure calcns. indicate that the large SHG response is attributed to the high d. of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation. Crystallog. data are given.
- 21Clark, S. J.; Donaldson, J. D.; Harvey, J. A. Evidence for the Direct Population of Solid-State Bands by Non-Bonding Electron Pairs in Compounds of the Type CsMX3(M= Ge, Sn, Pb; X = Cl, Br, I) J. Mater. Chem. 1995, 5, 1813– 1818 DOI: 10.1039/jm9950501813Google ScholarThere is no corresponding record for this reference.
- 22Aharon, S.; Cohen, B. E.; Etgar, L. Hybrid Lead Halide Iodide and Lead Halide Bromide in Efficient Hole Conductor Free Perovskite Solar Cell J. Phys. Chem. C 2014, 118, 17160– 17165 DOI: 10.1021/jp5023407Google Scholar22https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXmtlSgtbo%253D&md5=3316d8c67b945ce90dee962ba1bfe2beHybrid Lead Halide Iodide and Lead Halide Bromide in Efficient Hole Conductor Free Perovskite Solar CellAharon, Sigalit; Cohen, Bat El; Etgar, LiozJournal of Physical Chemistry C (2014), 118 (30), 17160-17165CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)In this work we used CH3NH3PbInBr3-n (where 0 ≤ n ≤ 3) as hole conductor and light harvester is used in the solar cell. Various concns. of methylammonium iodide and methylammonium bromide were studied which reveal that any compn. of the hybrid CH3NH3PbInBr3-n can conduct holes. The hybrid perovskite was deposited in two steps, sepg. it to two precursors to allow better control of the perovskite compn. and efficient tuning of its band gap. The X-ray diffraction reveals the change in the lattice parameter due to the introduction of the Br- ions. The hybrid iodide/bromide perovskite hole conductor free solar cells show very good stability, their power conversion efficiency achieved 8.54% under 1 sun illumination with c.d. of 16.2 mA/cm2. The results of this work open the possibility for graded structure of perovskite solar cells without the need for hole conductor.
- 23Noh, J. H.; Im, S. H.; Heo, J. H.; Mandal, T. N.; Seok, S. I. Chemical Management for Colorful, Efficient, and Stable Inorganic–Organic Hybrid Nanostructured Solar Cells Nano Lett. 2013, 13, 1764– 1769 DOI: 10.1021/nl400349bGoogle Scholar23https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXksVyit7w%253D&md5=6279f57e41e3bc9eb469af9b0baa3149Chemical Management for Colorful, Efficient, and Stable Inorganic-Organic Hybrid Nanostructured Solar CellsNoh, Jun Hong; Im, Sang Hyuk; Heo, Jin Hyuck; Mandal, Tarak N.; Seok, Sang IlNano Letters (2013), 13 (4), 1764-1769CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)Chem. tuned inorg.-org. hybrid materials, based on MeNH3(=MA)Pb(I1-xBrx)3 perovskites, have been studied using UV-visible absorption and x-ray diffraction patterns and applied to nanostructured solar cells. The band gap engineering brought about by the chem. management of MAPb(I1-xBrx)3 perovskites can be controllably tuned to cover almost the entire visible spectrum, enabling the realization of colorful solar cells. The authors demonstrate highly efficient solar cells exhibiting 12.3% in a power conversion efficiency of under std. AM 1.5, for the most efficient device, as a result of tunable compn. for the light harvester in conjunction with a mesoporous TiO2 film and a hole conducting polymer. Probably the works highlighted in this paper represent one step toward the realization of low-cost, high-efficiency, and long-term stability with colorful solar cells.
- 24Kitazawa, N.; Watanabe, Y.; Nakamura, Y. Optical Properties of CH3NH3PbX3 (X = Halogen) and their Mixed-Halide Crystals J. Mater. Sci. 2002, 37, 3585– 3587 DOI: 10.1023/A:1016584519829Google Scholar24https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XlsFKnt7s%253D&md5=7b58cdad8c496308359e5ea44c881eb5Optical properties of CH3NH3PbX3 (X = halogen) and their mixed-halide crystalsKitazawa, N.; Watanabe, Y.; Nakamura, Y.Journal of Materials Science (2002), 37 (17), 3585-3587CODEN: JMTSAS; ISSN:0022-2461. (Kluwer Academic Publishers)Thin films of microcryst. CH3NH3PbX3 (X = halogen) as well as their mixed-halide crystals were fabricated by the spin-coating technique, and their optical properties were investigated. X-ray diffraction investigation revealed that CH3NH3PbBr3-xClx (x = 0-3) were successfully formed on glass substrate self-assembly and oriented with the a-axis. Owing to due to their large exciton binding energy, these materials showed clear exciton absorption and free-exciton emission in the visible region at room temp. Replacing Br with Cl made it possible to control the band structure of these materials. As a result, the peak position of the exciton band shifted continuously towards blue region with increasing the Cl content in the films.
- 25Protesescu, L.; Yakunin, S.; Bodnarchuk, M. I.; Krieg, F.; Caputo, R.; Hendon, C. H.; Yang, R. X.; Walsh, A.; Kovalenko, M. V. Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut Nano Lett. 2015, 15, 3692– 3696 DOI: 10.1021/nl5048779Google Scholar25https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhvVOjt74%253D&md5=9285d37903f27d4b4b602c17ddbdce03Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color GamutProtesescu, Loredana; Yakunin, Sergii; Bodnarchuk, Maryna I.; Krieg, Franziska; Caputo, Riccarda; Hendon, Christopher H.; Yang, Ruo Xi; Walsh, Aron; Kovalenko, Maksym V.Nano Letters (2015), 15 (6), 3692-3696CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)Metal halides perovskites, such as hybrid org.-inorg. MeNH3PbI3, are newcomer optoelectronic materials that have attracted enormous attention as soln.-deposited absorbing layers in solar cells with power conversion efficiencies reaching 20%. A new avenue for halide perovskites was demonstrated by designing highly luminescent perovskite-based colloidal quantum dot materials. Monodisperse colloidal nanocubes (4-15 nm edge lengths) of fully inorg. perovskites (CsPbX3, X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) were synthesized using inexpensive com. precursors. Through compositional modulations and quantum size-effects, the bandgap energies and emission spectra are readily tunable over the entire visible spectral region of 410-700 nm. The luminescence of CsPbX3 nanocrystals is characterized by narrow emission line-widths of 12-42 nm, wide color gamut covering up to 140% of the NTSC color std., high quantum yields of ≤90%, and radiative lifetimes at 1-29 ns. The compelling combination of enhanced optical properties and chem. robustness makes CsPbX3 nanocrystals appealing for optoelectronic applications, particularly for blue and green spectral regions (410-530 nm), where typical metal chalcogenide-based quantum dots suffer from photodegrdn.
- 26Wei, F.; Deng, Z.; Sun, S.; Xie, F.; Kieslich, G.; Evans, D. M.; Carpenter, M. A.; Bristowe, P. D.; Cheetham, A. K. The Synthesis, Structure and Electronic Properties of a Lead-Free Hybrid Inorganic-Organic Double Perovskite (MA)2KBiCl6 (MA = Methylammonium) Mater. Horiz. 2016, 3, 328– 332 DOI: 10.1039/C6MH00053CGoogle Scholar26https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28Xms1Kls70%253D&md5=be5cf12edb715a8ce626a325a3a5c8bdThe synthesis, structure and electronic properties of a lead-free hybrid inorganic-organic double perovskite (MA)2KBiCl6 (MA = methylammonium)Wei, Fengxia; Deng, Zeyu; Sun, Shijing; Xie, Fei; Kieslich, Gregor; Evans, Donald M.; Carpenter, Michael A.; Bristowe, Paul D.; Cheetham, Anthony K.Materials Horizons (2016), 3 (4), 328-332CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)In a search for lead-free materials that could be used as alternatives to the hybrid perovskites, (MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows strong similarities to the lead analogs. Spectroscopic measurements and nanoindentation studies are combined with d. functional calcns. to reveal the properties of this interesting system.
- 27Hoye, R. L. Z.; Brandt, R. E.; Osherov, A.; Stevanović, V.; Stranks, S. D.; Wilson, M. W. B.; Kim, H.; Akey, A. J.; Perkins, J. D.; Kurchin, R. C.; Poindexter, J. R.; Wang, E. N.; Bawendi, M. G.; Bulović, V.; Buonassisi, T. Methylammonium Bismuth Iodide as a Lead-Free, Stable Hybrid Organic–Inorganic Solar Absorber Chem. - Eur. J. 2016, 22, 2605– 2610 DOI: 10.1002/chem.201505055Google Scholar27https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtFOnsrY%253D&md5=419363f3fc4fe5c98466af8b3a217c5cMethylammonium Bismuth Iodide as a Lead-Free, Stable Hybrid Organic-Inorganic Solar AbsorberHoye, Robert L. Z.; Brandt, Riley E.; Osherov, Anna; Stevanovic, Vladan; Stranks, Samuel D.; Wilson, Mark W. B.; Kim, Hyunho; Akey, Austin J.; Perkins, John D.; Kurchin, Rachel C.; Poindexter, Jeremy R.; Wang, Evelyn N.; Bawendi, Moungi G.; Bulovic, Vladimir; Buonassisi, TonioChemistry - A European Journal (2016), 22 (8), 2605-2610CODEN: CEUJED; ISSN:0947-6539. (Wiley-VCH Verlag GmbH & Co. KGaA)Methylammonium lead halide (MAPbX3) perovskites exhibit exceptional carrier transport properties. But their com. deployment as solar absorbers is currently limited by their intrinsic instability in the presence of humidity and their lead content. Guided by our theor. predictions, we explored the potential of methylammonium bismuth iodide (MBI) as a solar absorber through detailed materials characterization. We synthesized phase-pure MBI by soln. and vapor processing. In contrast to MAPbX3, MBI is air stable, forming a surface layer that does not increase the recombination rate. We found that MBI luminesces at room temp., with the vapor-processed films exhibiting superior photoluminescence (PL) decay times that are promising for photovoltaic applications. The thermodn., electronic, and structural features of MBI that are amenable to these properties are also present in other hybrid ternary bismuth halide compds. Through MBI, we demonstrate a lead-free and stable alternative to MAPbX3 that has a similar electronic structure and nanosecond lifetimes.
- 28Sun, S.; Tominaka, S.; Lee, J.-H.; Xie, F.; Bristowe, P. D.; Cheetham, A. K. Synthesis, Crystal Structure, and Properties of a Perovskite-Related Bismuth Phase, (NH4)3Bi2I9 APL Mater. 2016, 4, 031101 DOI: 10.1063/1.4943680Google Scholar28https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XktlChs70%253D&md5=88e8dae6b061215c891d0550f5588f00Synthesis, crystal structure, and properties of a perovskite-related bismuth phase, (NH4)3Bi2I9Sun, Shijing; Tominaka, Satoshi; Lee, Jung-Hoon; Xie, Fei; Bristowe, Paul D.; Cheetham, Anthony K.APL Materials (2016), 4 (3), 031101/1-031101/7CODEN: AMPADS; ISSN:2166-532X. (American Institute of Physics)Org.-inorg. halide perovskites, esp. methylammonium lead halide, have recently led to remarkable advances in photovoltaic devices. However, due to environmental and stability concerns around the use of lead, research into lead-free perovskite structures has been attracting increasing attention. In this study, a layered perovskite-like architecture, (NH4)3Bi2I9, is prepd. from soln. and the structure solved by single crystal X-ray diffraction. The band gap, which is estd. to be 2.04 eV using UV-visible spectroscopy, is lower than that of CH3NH3PbBr3. The energy-minimized structure obtained from first principles calcns. is in excellent agreement with the X-ray results and establishes the locations of the hydrogen atoms. The calcns. also point to a significant lone pair effect on the bismuth ion. Single crystal and powder cond. measurements are performed to examine the potential application of (NH4)3Bi2I9 as an alternative to the lead contg. perovskites. (c) 2016 American Institute of Physics.
- 29Lehner, A. J.; Fabini, D. H.; Evans, H. A.; Hébert, C.-A.; Smock, S. R.; Hu, J.; Wang, H.; Zwanziger, J. W.; Chabinyc, M. L.; Seshadri, R. Crystal and Electronic Structures of Complex Bismuth Iodides A3Bi2I9 (A = K, Rb, Cs) Related to Perovskite: Aiding the Rational Design of Photovoltaics Chem. Mater. 2015, 27, 7137– 7148 DOI: 10.1021/acs.chemmater.5b03147Google Scholar29https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhs1CqsbbJ&md5=bd495797b4a2fc36821095c0614ef3b8Crystal and Electronic Structures of Complex Bismuth Iodides A3Bi2I9 (A = K, Rb, Cs) Related to Perovskite: Aiding the Rational Design of PhotovoltaicsLehner, Anna J.; Fabini, Douglas H.; Evans, Hayden A.; Hebert, Claire-Alice; Smock, Sara R.; Hu, Jerry; Wang, Hengbin; Zwanziger, Josef W.; Chabinyc, Michael L.; Seshadri, RamChemistry of Materials (2015), 27 (20), 7137-7148CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)Ternary bismuth halides form an interesting functional materials class in the context of the closely related Pb halide perovskite photovoltaics, esp. given the significantly reduced toxicity of Bi when compared with Pb. The compds. A3Bi2I9 (A = K, Rb, Cs) examd. here crystallize in two different structure types: the layered defect-perovskite K3Bi2I9 type, and the Cs3Cr2Cl9 type. The latter structure type features isolated Bi2I93- anions. Here, the crystal structures of the ternary iodides are redetd. and a cor. structural model for Rb3Bi2I9, as established by single crystal x-ray diffraction and solid state 87Rb NMR spectroscopy and supported by d. functional theory (DFT) calcns. is presented. A variety of facile prepn. techniques for single crystals, bulk materials, as well as soln.-processed thin films are described. The optical properties and electronic structures were studied exptl. by optical absorption and UPS and computationally by DFT calcns. Abs. band positions of the valence and conduction bands of these semiconductors, with excellent agreement of exptl. and calcd. values, are reported, constituting a useful input for the rational interface design of efficient electronic and optoelectronic devices. The different structural connectivity in the two different structure types, somewhat surprisingly, appears to not impact band positions or band gaps in a significant manner. Computed dielec. properties, including the finding of anomalously large Born effective charge tensors on Bi3+, suggest proximal structural instabilities arising from the Bi3+ 6s2 lone pair. These anomalous Born effective charges are promising for defect screening and effective charge carrier transport. The structural, electronic, and optical properties of the complex bismuth iodides are to some extent similar to the related lead iodide perovskites. The deeper valence band positions in the complex bismuth iodides point to the need for different choices of hole transport materials for Bi-iodide based solar cell architectures.
- 30McClure, E. T.; Ball, M. R.; Windl, W.; Woodward, P. M. Cs2AgBiX6 (X = Br, Cl): New Visible Light Absorbing, Lead-Free Halide Perovskite Semiconductors Chem. Mater. 2016, 28, 1348– 1354 DOI: 10.1021/acs.chemmater.5b04231Google Scholar30https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28Xitleqtb8%253D&md5=5863054486fde8f7011cda716e381d66Cs2AgBiX6 (X = Br, Cl): New Visible Light Absorbing, Lead-Free Halide Perovskite SemiconductorsMcClure, Eric T.; Ball, Molly R.; Windl, Wolfgang; Woodward, Patrick M.Chemistry of Materials (2016), 28 (5), 1348-1354CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)The double perovskites Cs2AgBiBr6 and Cs2AgBiCl6 have been synthesized from both solid state and soln. routes. X-ray diffraction measurements show that both compds. adopt the cubic double perovskite structure, space group Fm‾3m, with lattice parameters of 11.2711(1) Å (X = Br) and 10.7774(2) Å (X = Cl). Diffuse reflectance measurements reveal band gaps of 2.19 eV (X = Br) and 2.77 eV (X = Cl) that are slightly smaller than the band gaps of the analogous lead halide perovskites, 2.26 eV for CH3NH3PbBr3 and 3.00 eV for CH3NH3PbCl3. Band structure calcns. indicate that the interaction between the Ag 4d-orbitals and the 3p/4p-orbitals of the halide ion modifies the valence band leading to an indirect band gap. Both compds. are stable when exposed to air, but Cs2AgBiBr6 degrades over a period of weeks when exposed to both ambient air and light. These results show that halide double perovskite semiconductors are potentially an environmentally friendly alternative to the lead halide perovskite semiconductors.
- 31Lehner, A. J.; Wang, H.; Fabini, D. H.; Liman, C. D.; Hébert, C.-A.; Perry, E. E.; Wang, M.; Bazan, G. C.; Chabinyc, M. L.; Seshadri, R. Electronic Structure and Photovoltaic Application of BiI3 Appl. Phys. Lett. 2015, 107, 131109 DOI: 10.1063/1.4932129Google Scholar31https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhsFOrsLzO&md5=694fc03fe8c04f033b3bd081b5853a0cElectronic structure and photovoltaic application of BiI3Lehner, Anna J.; Wang, Hengbin; Fabini, Douglas H.; Liman, Christopher D.; Hebert, Claire-Alice; Perry, Erin E.; Wang, Ming; Bazan, Guillermo C.; Chabinyc, Michael L.; Seshadri, RamApplied Physics Letters (2015), 107 (13), 131109/1-131109/4CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)Rapid recent improvement in photovoltaic efficiency in hybrid lead halide perovskite materials provided the impetus for understanding other, related main-group halide systems. Here, the closely related but less toxic BiI3 can show promising optoelectronic properties. Layered binary BiI3 is used here as the active layer in planar solar cell architectures (efficiency ∼0.3%). Exptl. and computational studies of abs. band positions of BiI3 are also presented, to help in the rational design of device architectures that would allow efficient charge transfer at the interfaces. (c) 2015 American Institute of Physics.
- 32Brandt, R. E.; Kurchin, R. C.; Hoye, R. L. Z.; Poindexter, J. R.; Wilson, M. W. B.; Sulekar, S.; Lenahan, F.; Yen, P. X. T.; Stevanović, V.; Nino, J. C.; Bawendi, M. G.; Buonassisi, T. Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications J. Phys. Chem. Lett. 2015, 6, 4297– 4302 DOI: 10.1021/acs.jpclett.5b02022Google Scholar32https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhs1ChsL3E&md5=af07e453a1e90e6c8c6ad518bfe22efaInvestigation of Bismuth Triiodide (BiI3) for Photovoltaic ApplicationsBrandt, Riley E.; Kurchin, Rachel C.; Hoye, Robert L. Z.; Poindexter, Jeremy R.; Wilson, Mark W. B.; Sulekar, Soumitra; Lenahan, Frances; Yen, Patricia X. T.; Stevanovic, Vladan; Nino, Juan C.; Bawendi, Moungi G.; Buonassisi, TonioJournal of Physical Chemistry Letters (2015), 6 (21), 4297-4302CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)Guided by predictive discovery framework, the authors study bismuth triiodide (BiI3) as a candidate thin-film photovoltaic (PV) absorber. BiI3 was chosen for its optical properties and the potential for defect-tolerant charge transport properties, which the authors test exptl. by measuring optical absorption and recombination lifetimes. The authors synthesize phase-pure BiI3 thin films by phys. vapor transport and soln. processing and single-crystals by an electrodynamic gradient vertical Bridgman method. The bandgap of these materials is ∼1.8 eV, and they demonstrate room-temp. band-edge photoluminescence. The authors measure monoexponential recombination lifetimes at 180-240 ps for thin films, and longer, multiexponential dynamics for single crystals, with time consts. up to 1.3 to 1.5 ns. The outstanding challenges to developing BiI3 PVs, including mech. and elec. properties, which can also inform future selection of candidate PV absorbers are discussed.
- 33Podraza, N. J.; Qiu, W.; Hinojosa, B. B.; Xu, H.; Motyka, M. A.; Phillpot, S. R.; Baciak, J. E.; Trolier-McKinstry, S.; Nino, J. C. Band Gap and Structure of Single Crystal BiI3: Resolving Discrepancies in Literature J. Appl. Phys. 2013, 114, 033110 DOI: 10.1063/1.4813486Google Scholar33https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhtFCjurjF&md5=775ec1681c8864a8d4ba90085858fce5Band gap and structure of single crystal BiI3: Resolving discrepancies in literaturePodraza, Nikolas J.; Qiu, Wei; Hinojosa, Beverly B.; Xu, Haixuan; Motyka, Michael A.; Phillpot, Simon R.; Baciak, James E.; Trolier-McKinstry, Susan; Nino, Juan C.Journal of Applied Physics (Melville, NY, United States) (2013), 114 (3), 033110/1-033110/8CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)Bismuth tri-iodide (BiI3) is an intermediate band gap semiconductor with potential for room temp. gamma-ray detection applications. Remarkably, very different band gap characteristics and values of BiI3 have been reported in literature, which may be attributed to its complicated layered structure with strongly bound BiI6 octahedra held together by weak van der Waals interactions. Here, to resolve this discrepancy, the band gap of BiI3 was characterized through optical and computational methods and differences among previously reported values are discussed. Unpolarized transmittance and reflectance spectra in the visible to near UV (UV-Vis) range at room temp. yielded an indirect band gap of 1.67 ± 0.09 eV, while spectroscopic ellipsometry detected a direct band gap at 1.96 ± 0.05 eV and higher energy crit. point features. The discrepancy between the UV-Vis and ellipsometry results originates from the low optical absorption coeffs. (α ∼ 102 cm-1) of BiI3 that renders reflection-based ellipsometry insensitive to the indirect gap for this material. Further, electronic-structure calcns. of the band structure by d. functional theory methods are also consistent with the presence of an indirect band gap of 1.55 eV in BiI3. Based on this, an indirect band gap with a value of 1.67 ± 0.09 eV is considered to best represent the band gap structure and value for single crystal BiI3. (c) 2013 American Institute of Physics.
- 34Kim, Y.; Yang, Z.; Jain, A.; Voznyy, O.; Kim, G.-H.; Liu, M.; Quan, L. N.; García de Arquer, F. P.; Comin, R.; Fan, J. Z.; Sargent, E. H. Pure Cubic-Phase Hybrid Iodobismuthates AgBi2I7 for Thin-Film Photovoltaics Angew. Chem., Int. Ed. 2016, 55, 9586– 9590 DOI: 10.1002/anie.201603608Google Scholar34https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtV2itLbL&md5=736dd3a819f56732fdf50df8c23ef3b0Pure Cubic-Phase Hybrid Iodobismuthates AgBi2I7 for Thin-Film PhotovoltaicsKim, Younghoon; Yang, Zhenyu; Jain, Ankit; Voznyy, Oleksandr; Kim, Gi-Hwan; Liu, Min; Quan, Li Na; Garcia de Arquer, F. Pelayo; Comin, Riccardo; Fan, James Z.; Sargent, Edward H.Angewandte Chemie, International Edition (2016), 55 (33), 9586-9590CODEN: ACIEF5; ISSN:1433-7851. (Wiley-VCH Verlag GmbH & Co. KGaA)Bismuth-based hybrid perovskites are candidates for lead-free and air-stable photovoltaics, but poor surface morphologies and a high band-gap energy have previously limited these hybrid perovskites. A new materials processing strategy to produce enhanced bismuth-based thin-film photovoltaic absorbers by incorporation of monovalent silver cations into iodobismuthates is presented. Soln.-processed AgBi2I7 thin films are prepd. by spin-coating silver and bismuth precursors dissolved in n-butylamine and annealing under an N2 atmosphere. X-ray diffraction anal. reveals the pure cubic structure (Fd3m) with lattice parameters of a=b=c=12.223 Å. The resultant AgBi2I7 thin films exhibit dense and pinhole-free surface morphologies with grains ranging in size from 200-800 nm and a low band gap of 1.87 eV suitable for photovoltaic applications. Initial studies produce solar power conversion efficiencies of 1.22 % and excellent stability over at least 10 days under ambient conditions.
- 35Xiao, Z.; Meng, W.; Mitzi, D. B.; Yan, Y. Crystal Structure of AgBi2I7 Thin Films J. Phys. Chem. Lett. 2016, 7, 3903– 3907 DOI: 10.1021/acs.jpclett.6b01834Google Scholar35https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhsFWqsbvF&md5=3b9803db5e3c0faf00f59ffc63ab625dCrystal Structure of AgBi2I7 Thin FilmsXiao, Zewen; Meng, Weiwei; Mitzi, David B.; Yan, YanfaJournal of Physical Chemistry Letters (2016), 7 (19), 3903-3907CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)Synthesis of cubic-phase AgBi2I7 iodobismuthate films and fabrication of air-stable Pb-free solar cells using the AgBi2I7 absorber have recently been reported. From XRD anal. and nominal compn., probably the synthesized films have a cubic ThZr2H7 crystal structure with AgBi2I7 stoichiometry. Through careful examn. of the proposed structure and computational evaluation of the phase stability and bandgap, the reported AgBi2I7 films cannot be forming with the ThZr2H7-type structure, but rather more likely adopt an Ag-deficient AgBiI4 type. Both the exptl. x-ray diffraction pattern and bandgap can be better explained by the AgBiI4 structure. The proposed AgBiI4 structure, with octahedral Bi coordination, removes unphys. short Bi-I bonding within the [BiI8] hexahedra of the ThZr2I7 model. The results provide crit. insights for assessing the photovoltaic properties of AgBi2I7 iodobismuthate materials.
- 36Oldag, T.; Aussieker, T.; Keller, H.-L.; Preitschaft, C.; Pfitzner, A. Solvothermale Synthese und Bestimmung der Kristallstrukturen von AgBiI4 und Ag3BiI6 Z. Anorg. Allg. Chem. 2005, 631, 677– 682 DOI: 10.1002/zaac.200400508Google Scholar36https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXit1Sgsrg%253D&md5=86d8047e764e92b569a14cdd1775f9d6Solvothermal synthesis and crystal structure determination of AgBiI4 and Ag3BiI6Oldag, Thorsten; Aussieker, Thomas; Keller, Hans-Lothar; Preitschaft, Christian; Pfitzner, ArnoZeitschrift fuer Anorganische und Allgemeine Chemie (2005), 631 (4), 677-682CODEN: ZAACAB; ISSN:0044-2313. (Wiley-VCH Verlag GmbH & Co. KGaA)AgBiI4 and Ag3BiI6 were synthesized by solvothermal reaction from AgI and BiI3 in dild. HI-soln. (20%) at a temp. of 160°. The grayish-black crystals grow as octahedra (Ag-BiI4) or hexagonal/trigonal platelets (Ag3BiI6). AgBiI4 crystallizes in space group Fd‾3m with a = 1222.3(1) pm (300 K), Z = 8, R1 = 0.0151, wR2 = 0.0226, whereas Ag3BiI6 shows the space group R‾3m with a = 435.37(6) pm, c = 2081.0(4) pm (300 K), Z = 1, 154 independent reflections, 8 refined parameters, R1 = 0.0220, wR2 = 0.0573. Both crystal structures show stacking sequence abcabc... of hexagonal layers contg. I. Bi and Ag are sharing octahedral sites with different mass ratio in both structures. The part of Ag which could be localized varies with temp. This behavior indicates mobility of Ag within the crystal structure. The ionic cond. of AgBiI4 is explored. AgBiI4 and Ag3BiI6 show close structural relationship, with AgBiI4 as a variant with a higher degree of order.
- 37Fourcroy, P. H.; Palazzi, M.; Rivet, J.; Flahaut, J.; Céolin, R. Etude du Systeme AgIBiI3 Mater. Res. Bull. 1979, 14, 325– 328 DOI: 10.1016/0025-5408(79)90096-5Google Scholar37https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaE1MXhslGnsb0%253D&md5=cb593f032b7e15501bc77bb97b402f67Study of the silver iodide-bismuth(III) iodide systemFourcroy, P. H.; Palazzi, M.; Rivet, J.; Flahaut, J.; Ceolin, R.Materials Research Bulletin (1979), 14 (3), 325-8CODEN: MRBUAC; ISSN:0025-5408.The pseudo-binary system AgI-BiI3 was studied by DTA and by microcalorimetry. An eutectic point was found at 389° at the compn. 85 mol. % BiI3. Two new phases Ag2BiI5 and AgBi2I7 were identified, and their existence confirmed by x-ray diffraction. Ag2BiI5 is rhombohedral, with hexagonal a 4.34 and c 20.77 Å. AgBi2I7 is cubic with a 3.05 Å.
- 38Dzeranova, K. B.; Kaloev, N. I.; Bukhalova, G. A. The BiI3 - AgI System Russ. J. Inorg. Chem. 1985, 30, 1700– 1701Google ScholarThere is no corresponding record for this reference.
- 39Mashadieva, L. F.; Aliev, Z. S.; Shevelkov, A. V.; Babanly, M. B. Experimental Investigation of the Ag–Bi–I Ternary System and Thermodynamic Properties of the Ternary Phases J. Alloys Compd. 2013, 551, 512– 520 DOI: 10.1016/j.jallcom.2012.11.033Google Scholar39https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXntFOksA%253D%253D&md5=ba71d0b553101e5f94286517d6fda296Experimental investigation of the Ag-Bi-I ternary system and thermodynamic properties of the ternary phasesMashadieva, Leyla F.; Aliev, Ziya S.; Shevelkov, Andrei V.; Babanly, Mahammad B.Journal of Alloys and Compounds (2013), 551 (), 512-520CODEN: JALCEU; ISSN:0925-8388. (Elsevier B.V.)The phase equil. in the Ag-Bi-I ternary system and thermodn. properties of the ternary phases were exptl. detd. by using DTA and x-ray diffraction techniques and EMF measurements with the Ag4RbI5 solid electrolyte. According to the obtained exptl. results, the polythermal sections of the ternary phase diagram, its isothermal section at 300 K as well as the projection of the liqs. surface were revised. The fields of the primary crystn. and types and coordinates of non-variant and mono-variant equil. were detd. The partial molar functions of silver iodide and silver in the alloys as well as the std. thermodn. functions of formation and the std. entropies of Ag2BiI5 and AgBi2I7 were calcd. based on EMF measurements.
- 40Degen, T.; Sadki, M.; Bron, E.; König, U.; Nénert, G. The HighScore Suite Powder Diffr. 2014, 29, S13– S18 DOI: 10.1017/S0885715614000840Google Scholar40https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXitFWiu7bL&md5=b9b94fe92322ae53c50b4094dc4d5d89The HighScore suiteDegen, Thomas; Sadki, Mustapha; Bron, Egbert; Koenig, Uwe; Nenert, GwilhermPowder Diffraction (2014), 29 (S2), S13-S18CODEN: PODIE2; ISSN:0885-7156. (Cambridge University Press)HighScore with the Plus option (HighScore Plus) is the com. powder diffraction anal. software from PAnal. It has been in const. development over the last 13 years and has evolved into a very complete and mature product. In this paper, we present a brief overview of the suite focusing on the latest addns. and its user-friendliness. The introduction briefly touches some basic ideas behind HighScore and the Plus option.
- 41TOPAS, version 5; Bruker AXS: Karlsruhe, Germany, 2011.Google ScholarThere is no corresponding record for this reference.
- 42Momma, K.; Izumi, F. VESTA: a Three-Dimensional Visualization System for Electronic and Structural Analysis J. Appl. Crystallogr. 2008, 41, 653– 658 DOI: 10.1107/S0021889808012016Google Scholar42https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXlvFKgu78%253D&md5=0e9d075bd3ff51aa0f34e09a2ddb1f04VESTA: a three-dimensional visualization system for electronic and structural analysisMomma, Koichi; Izumi, FujioJournal of Applied Crystallography (2008), 41 (3), 653-658CODEN: JACGAR; ISSN:0021-8898. (International Union of Crystallography)A cross-platform program, VESTA, has been developed to visualize both structural and volumetric data in multiple windows with tabs. VESTA represents crystal structures by ball-and-stick, space-filling, polyhedral, wire frame, stick, dot-surface and thermal-ellipsoid models. A variety of crystal-chem. information is extractable from fractional coordinates, occupancies and oxidn. states of sites. Volumetric data such as electron and nuclear densities, Patterson functions, and wavefunctions are displayed as isosurfaces, bird's-eye views and two-dimensional maps. Isosurfaces can be colored according to other phys. quantities. Translucent isosurfaces and/or slices can be overlapped with a structural model. Collaboration with external programs enables the user to locate bonds and bond angles in the 'graphics area', simulate powder diffraction patterns, and calc. site potentials and Madelung energies. Electron densities detd. exptl. are convertible into their Laplacians and electronic energy densities.
- 43CrysAlisPro, version 171.38.48; Agilent Technologies: Yarton, Oxfordshire, U.K., 2013.Google ScholarThere is no corresponding record for this reference.
- 44Sheldrick, G. A Short History of SHELX Acta Crystallogr., Sect. A: Found. Crystallogr. 2008, 64, 112– 122 DOI: 10.1107/S0108767307043930Google Scholar44https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhsVGhurzO&md5=8f91f10be4a9df74b2a9dad522c71e6eA short history of SHELXSheldrick, George M.Acta Crystallographica, Section A: Foundations of Crystallography (2008), 64 (1), 112-122CODEN: ACACEQ; ISSN:0108-7673. (International Union of Crystallography)An account is given of the development of the SHELX system of computer programs from SHELX-76 to the present day. In addn. to identifying useful innovations that have come into general use through their implementation in SHELX, a crit. anal. is presented of the less-successful features, missed opportunities and desirable improvements for future releases of the software. An attempt is made to understand how a program originally designed for photog. intensity data, punched cards and computers over 10000 times slower than an av. modern personal computer has managed to survive for so long. SHELXL is the most widely used program for small-mol. refinement and SHELXS and SHELXD are often employed for structure soln. despite the availability of objectively superior programs. SHELXL also finds a niche for the refinement of macromols. against high-resoln. or twinned data; SHELXPRO acts as an interface for macromol. applications. SHELXC, SHELXD and SHELXE are proving useful for the exptl. phasing of macromols., esp. because they are fast and robust and so are often employed in pipelines for high-throughput phasing. This paper could serve as a general literature citation when one or more of the open-source SHELX programs (and the Bruker AXS version SHELXTL) are employed in the course of a crystal-structure detn.
- 45Dolomanov, O. V.; Bourhis, L. J.; Gildea, R. J.; Howard, J. A. K.; Puschmann, H. OLEX2: a Complete Structure Solution, Refinement and Analysis Program J. Appl. Crystallogr. 2009, 42, 339– 341 DOI: 10.1107/S0021889808042726Google Scholar45https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXjsFSnsbg%253D&md5=7a2f9697b13b8e76de0e7dc5074ab229OLEX2: a complete structure solution, refinement and analysis programDolomanov, Oleg V.; Bourhis, Luc J.; Gildea, Richard J.; Howard, Judith A. K.; Puschmann, HorstJournal of Applied Crystallography (2009), 42 (2), 339-341CODEN: JACGAR; ISSN:0021-8898. (International Union of Crystallography)New software, OLEX2, was developed for the detn., visualization and anal. of mol. crystal structures. The software has a portable mouse-driven workflow-oriented and fully comprehensive graphical user interface for structure soln., refinement and report generation, as well as novel tools for structure anal. OLEX2 seamlessly links all aspects of the structure soln., refinement and publication process and presents them in a single workflow-driven package, with the ultimate goal of producing an application which will be useful to both chemists and crystallographers.
- 46Whittles, T. J.; Burton, L. A.; Skelton, J. M.; Walsh, A.; Veal, T. D.; Dhanak, V. R. Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory Chem. Mater. 2016, 28, 3718– 3726 DOI: 10.1021/acs.chemmater.6b00397Google Scholar46https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XnsVWjtbk%253D&md5=5bb8191e00705a156651310943a6ab70Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and TheoryWhittles, Thomas J.; Burton, Lee A.; Skelton, Jonathan M.; Walsh, Aron; Veal, Tim D.; Dhanak, Vin R.Chemistry of Materials (2016), 28 (11), 3718-3726CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic properties, and there is difficulty in identifying sep. phases, which are also known to form during Cu2ZnSnS4 depositions. The authors present x-ray photoemission spectroscopy (XPS) and inverse photoemission spectroscopy measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calcns. from d. functional theory (DFT). Differences in the XPS spectra of the three phases, including a large 0.9 eV shift between the 3d5/2 peak for SnS and SnS2, make this technique useful when identifying phase-pure or mixed-phase systems. Comparison of the valence band spectra from XPS and DFT reveals extra states at the top of the valence bands of SnS and Sn2S3, arising from the hybridization of lone pair electrons in Sn(II), which are not present for Sn(IV), as found in SnS2. This results in relatively low ionization potentials for SnS (4.71 eV) and Sn2S3 (4.66 eV), giving a more comprehensive explanation as to the origin of the poor efficiencies. The authors also demonstrate, by a band alignment, the large band offsets of SnS and Sn2S3 from other photovoltaic materials and highlight the detrimental effect on cell performance of secondary tin sulfide phase formation in SnS and CZTS films.
- 47Moulder, J. F.; Stickle, W. F.; Sobol, P. E.; Bomben, K. D.; Chastain, J.; King, R. C. Handbook of X-ray Photoelectron Spectroscopy; Physical Electronics, Inc.: Eden Prairie, MN, 1995.Google ScholarThere is no corresponding record for this reference.
- 48Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations using a Plane-Wave Basis Set Phys. Rev. B: Condens. Matter Mater. Phys. 1996, 54, 11169– 11186 DOI: 10.1103/PhysRevB.54.11169Google Scholar48https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28Xms1Whu7Y%253D&md5=9c8f6f298fe5ffe37c2589d3f970a697Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis setKresse, G.; Furthmueller, J.Physical Review B: Condensed Matter (1996), 54 (16), 11169-11186CODEN: PRBMDO; ISSN:0163-1829. (American Physical Society)The authors present an efficient scheme for calcg. the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set. In the first part the application of Pulay's DIIS method (direct inversion in the iterative subspace) to the iterative diagonalization of large matrixes will be discussed. This approach is stable, reliable, and minimizes the no. of order Natoms3 operations. In the second part, we will discuss an efficient mixing scheme also based on Pulay's scheme. A special "metric" and a special "preconditioning" optimized for a plane-wave basis set will be introduced. Scaling of the method will be discussed in detail for non-self-consistent and self-consistent calcns. It will be shown that the no. of iterations required to obtain a specific precision is almost independent of the system size. Altogether an order Natoms2 scaling is found for systems contg. up to 1000 electrons. If we take into account that the no. of k points can be decreased linearly with the system size, the overall scaling can approach Natoms. They have implemented these algorithms within a powerful package called VASP (Vienna ab initio simulation package). The program and the techniques have been used successfully for a large no. of different systems (liq. and amorphous semiconductors, liq. simple and transition metals, metallic and semiconducting surfaces, phonons in simple metals, transition metals, and semiconductors) and turned out to be very reliable.
- 49Kresse, G.; Joubert, D. From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 59, 1758– 1775 DOI: 10.1103/PhysRevB.59.1758Google Scholar49https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1MXkt12nug%253D%253D&md5=78a73e92a93f995982fc481715729b14From ultrasoft pseudopotentials to the projector augmented-wave methodKresse, G.; Joubert, D.Physical Review B: Condensed Matter and Materials Physics (1999), 59 (3), 1758-1775CODEN: PRBMDO; ISSN:0163-1829. (American Physical Society)The formal relationship between ultrasoft (US) Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived. The total energy functional for US pseudopotentials can be obtained by linearization of two terms in a slightly modified PAW total energy functional. The Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional. A simple way to implement the PAW method in existing plane-wave codes supporting US pseudopotentials is pointed out. In addn., crit. tests are presented to compare the accuracy and efficiency of the PAW and the US pseudopotential method with relaxed-core all-electron methods. These tests include small mols. (H2, H2O, Li2, N2, F2, BF3, SiF4) and several bulk systems (diamond, Si, V, Li, Ca, CaF2, Fe, Co, Ni). Particular attention is paid to the bulk properties and magnetic energies of Fe, Co, and Ni.
- 50Klimeš, J.; Bowler, D. R.; Michaelides, A. Van der Waals Density Functionals Applied to Solids Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 83, 195131 DOI: 10.1103/PhysRevB.83.195131Google Scholar50https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXotVOlsbY%253D&md5=0e3350e5db3aa6fee4eadea9c6582255Van der Waals density functionals applied to solidsKlimes, Jiri; Bowler, David R.; Michaelides, AngelosPhysical Review B: Condensed Matter and Materials Physics (2011), 83 (19), 195131/1-195131/13CODEN: PRBMDO; ISSN:1098-0121. (American Physical Society)The van der Waals d. functional (vdW-DF) of M. Dion et al. [Phys. Rev. Lett. 92, 246401 (2004)] is a promising approach for including dispersion in approx. d. functional theory exchange-correlation functionals. Indeed, an improved description of systems held by dispersion forces has been demonstrated in the literature. However, despite many applications, std. general tests on a broad range of materials including traditional "hard" matter such as metals, ionic compds., and insulators are lacking. Such tests are important not least because many of the applications of the vdW-DF method focus on the adsorption of atoms and mols. on the surfaces of solids. Here we calc. the lattice consts., bulk moduli, and atomization energies for a range of solids using the original vdW-DF and several of its offspring. We find that the original vdW-DF overestimates lattice consts. in a similar manner to how it overestimates binding distances for gas-phase dimers. However, some of the modified vdW functionals lead to av. errors which are similar to those of PBE or better. Likewise, atomization energies that are slightly better than from PBE are obtained from the modified vdW-DFs. Although the tests reported here are for hard solids, not normally materials for which dispersion forces are thought to be important, we find a systematic improvement in cohesive properties for the alkali metals and alkali halides when nonlocal correlations are accounted for.
- 51Trotter, J.; Zobel, T. The Crystal Structure of Sbl3 and Bil3 Z. Kristallogr. 1966, 123, 67Google Scholar51https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaF28XktFKkt70%253D&md5=5548c851883a9d05fe069d3ee5101857The crystal structure of SbI3 and BiI3Trotter, J.; Zobel, T.Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (1966), 123 (1), 67-72CODEN: ZKKKAJ; ISSN:0044-2968.Crystals of antimony triiodide, SbI3, are rhombohedral, with aH 7.48, cH 20.90 A., Z = 6, and space group R‾3. The structure was detd. from Patterson, Fourier and difference projections, by using F(h0.l) data, the final discrepancy factor being 0.131. The Sb atoms are significantly displaced from the centers of I octahedra, and have 3 near-neighbor I atoms at 2.686 ± 0.0010 A., with I-Sb-I 95.8 ± 0.3°, and 3 farther at 3.316 ± 0.010 A. The structure is thus intermediate between that of a mol. crystal, as in AsI3, and an ionic arrangement. Crystals of BiI3 have aH 7.52, and cH 20.72 A. A comparison of measured and calcd. powder intensities suggests that Bi is situated at the center of an I octahedron, so that the nonbonded electron pair is not sterically active and the structure is probably largely ionic.
- 52Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996, 77, 3865– 3868 DOI: 10.1103/PhysRevLett.77.3865Google Scholar52https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28XmsVCgsbs%253D&md5=55943538406ee74f93aabdf882cd4630Generalized gradient approximation made simplePerdew, John P.; Burke, Kieron; Ernzerhof, MatthiasPhysical Review Letters (1996), 77 (18), 3865-3868CODEN: PRLTAO; ISSN:0031-9007. (American Physical Society)Generalized gradient approxns. (GGA's) for the exchange-correlation energy improve upon the local spin d. (LSD) description of atoms, mols., and solids. We present a simple derivation of a simple GGA, in which all parameters (other than those in LSD) are fundamental consts. Only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked. Improvements over PW91 include an accurate description of the linear response of the uniform electron gas, correct behavior under uniform scaling, and a smoother potential.
- 53Pauling, L.; Hoard, J. XXXVII. The Crystal Structure of Cadmium Chloride Z. Kristallogr. - Cryst. Mater. 1930, 74, 546– 551 DOI: 10.1524/zkri.1930.74.1.546Google Scholar53https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaA3cXltFOhtw%253D%253D&md5=79dd995e9f07c53eb51baf8bd958c670The crystal structure of cadmium chloridePauling, Linus; Hoard, J. L.Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (1930), 74 (), 546-51CODEN: ZKKKAJ; ISSN:0044-2968.The unit of structure for CdCl2 is a rhombohedron with α = 36°02' and a = 6.23 A. U. contg. 1 mol. There is a layer structure along [0001], closely related to that of Cdl2. The Cl atoms are in approximate cubic closepacking. The relation of the CdCl2 and the Cdl2 structures is discussed, and a list of similar compds. which crystallize in each type is given.
- 54Bordas, J.; Robertson, J.; Jakobsson, A. Ultraviolet Properties and Band Structure of SnS2, SnSe2, CdI2, PbI2, BiI3 and BiOI Crystals J. Phys. C: Solid State Phys. 1978, 11, 2607 DOI: 10.1088/0022-3719/11/12/021Google Scholar54https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaE1MXnvVGrug%253D%253D&md5=4e1694e1c994d4a5ed738edafe25b2c4Ultraviolet properties and band structure of tin disulfide, tin diselenide, cadmium diiodide, lead diiodide, bismuth triiodide, and bismuth iodide oxide crystalsBordas, J.; Robertson, J.; Jakobsson, A.Journal of Physics C: Solid State Physics (1978), 11 (12), 2607-21CODEN: JPSOAW; ISSN:0022-3719.The UV reflectivity spectra of the layer materials SnS2, SnSe2, CdI2, PbI2, BiI3, and BiOI were detd. at 8-40 eV. The band structures for SnS2, CdI2, and PbI2 were calcd. using an LCAO approach and the partial and total d. of states for the valence and conduction bands were compared with the optical consts. detd. from Kramers-Kronig anal. of the exptl. data. The obsd. optical transitions from the metal d-core states were discussed in terms of an at.-like picture.
- 55Leguy, A. M. A.; Azarhoosh, P.; Alonso, M. I.; Campoy-Quiles, M.; Weber, O. J.; Yao, J.; Bryant, D.; Weller, M. T.; Nelson, J.; Walsh, A.; van Schilfgaarde, M.; Barnes, P. R. F. Experimental and Theoretical Optical Properties of Methylammonium Lead Halide Perovskites Nanoscale 2016, 8, 6317– 6327 DOI: 10.1039/C5NR05435DGoogle Scholar55https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhs1SiurnP&md5=6150ead374052ea3ec95f7d16b767dc8Experimental and theoretical optical properties of methylammonium lead halide perovskitesLeguy, Aurelien M. A.; Azarhoosh, Pooya; Alonso, M. Isabel; Campoy-Quiles, Mariano; Weber, Oliver J.; Yao, Jizhong; Bryant, Daniel; Weller, Mark T.; Nelson, Jenny; Walsh, Aron; van Schilfgaarde, Mark; Barnes, Piers R. F.Nanoscale (2016), 8 (12), 6317-6327CODEN: NANOHL; ISSN:2040-3372. (Royal Society of Chemistry)The optical consts. of methylammonium lead halide single crystals CH3NH3PbX3 (X = I, Br, Cl) are interpreted with high level ab initio calcns. using the relativistic quasiparticle self-consistent GW approxn. (QSGW). Good agreement between the optical consts. derived from QSGW and those obtained from spectroscopic ellipsometry enables the assignment of the spectral features to their resp. inter-band transitions. We show that the transition from the highest valence band (VB) to the lowest conduction band (CB) is responsible for almost all the optical response of MAPbI3 between 1.2 and 5.5 eV (with minor contributions from the second highest VB and the second lowest CB). The calcns. indicate that the orientation of [CH3NH3]+ cations has a significant influence on the position of the bandgap suggesting that collective orientation of the org. moieties could result in significant local variations of the optical properties. The optical consts. and energy band diagram of CH3NH3PbI3 are then used to simulate the contributions from different optical transitions to a typical transient absorption spectrum (TAS).
- 56Sankapal, B.; Baviskar, P.; Salunkhe, D. Synthesis and Characterization of AgI Thin Films at Low Temperature J. Alloys Compd. 2010, 506, 268– 270 DOI: 10.1016/j.jallcom.2010.06.190Google Scholar56https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXhtVyqsrfN&md5=94a0ad31086db98586d107cd90418525Synthesis and characterization of AgI thin films at low temperatureSankapal, Babasaheb; Baviskar, Prashant; Salunkhe, DipakJournal of Alloys and Compounds (2010), 506 (1), 268-270CODEN: JALCEU; ISSN:0925-8388. (Elsevier B.V.)The growth of AgI (silver iodide) thin films has been performed in aq. medium using simple chem. method at room temp. (25 °C). Silver nitrate and potassium iodide have been used as source materials. Thin films were characterized by X-ray diffraction (XRD), SEM, at. force microscopy (AFM), surface photovoltage (SPV) and optical absorption spectroscopy. Glass and indium doped tin oxide (ITO) coated glass was used as substrates. The thin films were surface homogeneous with mixed β and γ-phases with surface roughness value of 21 nm. Optical transmission on glass exceeds 80% for 150 nm thick film with the direct band gap value of 2.85 eV. The change in crystal phases after transition temp. is studied by SPV measurements.
- 57Godby, R. W.; Schlüter, M.; Sham, L. J. Self-Energy Operators and Exchange-Correlation Potentials in Semiconductors Phys. Rev. B: Condens. Matter Mater. Phys. 1988, 37, 10159– 10175 DOI: 10.1103/PhysRevB.37.10159Google Scholar57https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A280%3ADC%252BC2sfhtFahsw%253D%253D&md5=311041734988d8d2986689e4a2f1effcSelf-energy operators and exchange-correlation potentials in semiconductorsGodby; Schluter; ShamPhysical review. B, Condensed matter (1988), 37 (17), 10159-10175 ISSN:0163-1829.There is no expanded citation for this reference.
- 58Pisoni, A.; Jaćimović, J.; Barišić, O. S.; Spina, M.; Gaál, R.; Forró, L.; Horváth, E. Ultra-Low Thermal Conductivity in Organic–Inorganic Hybrid Perovskite CH3NH3PbI3 J. Phys. Chem. Lett. 2014, 5, 2488– 2492 DOI: 10.1021/jz5012109Google Scholar58https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXhtFSmsLrE&md5=5557212c144e57caf4cb172ae64e6850Ultra-Low Thermal Conductivity in Organic-Inorganic Hybrid Perovskite CH3NH3PbI3Pisoni, Andrea; Jacimovic, Jacim; Barisic, Osor S.; Spina, Massimo; Gaal, Richard; Forro, Laszlo; Horvath, EndreJournal of Physical Chemistry Letters (2014), 5 (14), 2488-2492CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)The authors report on the temp. dependence of thermal cond. of single cryst. and polycryst. organometallic perovskite CH3NH3PbI3. The comparable abs. values and temp. dependence of the two samples' morphologies indicate the minor role of the grain boundaries on the heat transport. Theor. modeling demonstrates the importance of the resonant scattering in both specimens. The interaction between phonon waves and rotational degrees of freedom of CH3NH3+ sublattice emerges as the dominant mechanism for attenuation of heat transport and for ultralow thermal cond. of 0.5 W/(Km) at room temp.
- 59Mettan, X.; Pisoni, R.; Matus, P.; Pisoni, A.; Jaćimović, J.; Náfrádi, B.; Spina, M.; Pavuna, D.; Forró, L.; Horváth, E. Tuning of the Thermoelectric Figure of Merit of CH3NH3MI3 (M = Pb,Sn) Photovoltaic Perovskites J. Phys. Chem. C 2015, 119, 11506– 11510 DOI: 10.1021/acs.jpcc.5b03939Google Scholar59https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXnsFOgu70%253D&md5=acb76244c75e00b064d6e5021eb07386Tuning of the Thermoelectric Figure of Merit of CH3NH3MI3 (M= Pb, Sn) Photovoltaic PerovskitesMettan, Xavier; Pisoni, Riccardo; Matus, Peter; Pisoni, Andrea; Jacimovic, Jacim; Nafradi, Balint; Spina, Massimo; Pavuna, Davor; Forro, Laszlo; Horvath, EndreJournal of Physical Chemistry C (2015), 119 (21), 11506-11510CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)The hybrid halide perovskites, the very performant compds. in photovoltaic applications, possess large Seebeck coeff. and low thermal cond., making them potentially interesting high figure of merit (ZT) materials. For this purpose, one needs to tune the elec. cond. of these semiconductors to higher values. The authors have studied the CH3NH3MI3 (M = Pb,Sn) samples in pristine form showing very low ZT values for both materials; however, photoinduced doping (in M = Pb) and chem. doping (in M = Sn) indicate that, by further doping optimization, ZT can be enhanced toward unity and reach the performance level of the presently most efficient thermoelec. materials.
- 60Han, H.; Hong, M.; Gokhale, S. S.; Sinnott, S. B.; Jordan, K.; Baciak, J. E.; Nino, J. C. Defect Engineering of BiI3 Single Crystals: Enhanced Electrical and Radiation Performance for Room Temperature Gamma-Ray Detection J. Phys. Chem. C 2014, 118, 3244– 3250 DOI: 10.1021/jp411201kGoogle Scholar60https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXpt1Ortw%253D%253D&md5=29475039d22fb1a2ce206ae477b863d9Defect Engineering of BiI3 Single Crystals: Enhanced Electrical and Radiation Performance for Room Temperature Gamma-Ray DetectionHan, HyukSu; Hong, Minki; Gokhale, Sasmit S.; Sinnott, Susan B.; Jordan, Kelly; Baciak, James E.; Nino, Juan C.Journal of Physical Chemistry C (2014), 118 (6), 3244-3250CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)Undoped and Sb-doped BiI3 (SBI) single crystals are grown via the vertical Bridgman growth technique. Elec. properties, such as resistivity and leakage current, in addn. to radiation response measurements were performed on both BiI3 and SBI single crystal detectors. The resistivity of SBI (2.63109 Ω cm) increases by an order of magnitude compared to that of BiI3 (1.45 × 108 Ω cm). Also, leakage currents of SBI (10-2 μA/cm2) decrease by four orders magnitude relative to BiI3. The radiation response of the SBI indicates that less polarization exists under bias for prolonged periods of time, making SBI a promising material for use in gamma-ray detector applications. D. functional theory (DFT) calcns. predict that Sb forms strong covalent bonds with neighboring iodine ions and that the Sb-I dimer can be formed when Sb is doped into the BiI3 lattice. Defect modeling verifies that substitution of Bi ions with Sb and incorporation of Sb in iodine vacancy sites can effectively decrease the formation and migration of iodine vacancies, which significantly improves radiation detection performance of the material.
- 61Devidas, T. R.; Shekar, N. V. C.; Sundar, C. S.; Chithaiah, P.; Sorb, Y. A.; Bhadram, V. S.; Chandrabhas, N.; Pal, K.; Waghmare, U. V.; Rao, C. N. R. Pressure-Induced Structural Changes and Insulator-Metal Transition in Layered Bismuth Triiodide, BiI3: a Combined Experimental and Theoretical Study J. Phys.: Condens. Matter 2014, 26, 275502 DOI: 10.1088/0953-8984/26/27/275502Google Scholar61https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXht1alsbnL&md5=d2233284fc9ca2e68a358fbac67d8ce6Pressure-induced structural changes and insulator-metal transition in layered bismuth triiodide, BiI3: a combined experimental and theoretical studyDevidas, T. R.; Chandra Shekar, N. V.; Sundar, C. S.; Chithaiah, P.; Sorb, Y. A.; Bhadram, V. S.; Chandrabhas, N.; Pal, K.; Waghmare, U. V.; Rao, C. N. R.Journal of Physics: Condensed Matter (2014), 26 (27), 275502/1-275502/9, 9 pp.CODEN: JCOMEL; ISSN:0953-8984. (IOP Publishing Ltd.)Noting that BiI3 and the known topol. insulator (TI) Bi2Se3 have the same high symmetry parent structures, and that it is desirable to find a wide-band gap TI, the authors det. here the effects of pressure on the structure, phonons and electronic properties of rhombohedral BiI3. The authors report a pressure-induced insulator-metal transition near 1.5 GPa, using high pressure elec. resistivity and Raman measurements. X-ray diffraction studies, as a function of pressure, reveal a structural peculiarity of the BiI3 crystal, with a drastic drop in c/a ratio at 1.5 GPa, and a structural phase transition from rhombohedral to monoclinic structure at 8.8 GPa. The metallic phase, at relatively low pressures, exhibits minimal resistivity at low temps., similar to that in Bi2Se3. The authors corroborate these findings with 1st-principles calcns. and suggest that the drop in the resistivity of BiI3 in the 1-3 GPa range of pressure arises possibly from the appearance of an intermediate crystal phase with a lower band-gap and hexagonal crystal structure. Calcd. Born effective charges reveal metallic states in the structural vicinity of rhombohedral BiI3. Changes in the topol. of the electronic bands of BiI3 with pressure, and a sharp decrease in the c/a ratio <2 GPa, give rise to changes in the slope of phonon frequencies near that pressure.
- 62Castro-Hermosa, S.; Yadav, S. K.; Vesce, L.; Guidobaldi, A.; Reale, A.; Di Carlo, A. D.; Brown, T. M. Stability Issues Pertaining Large Area Perovskite and Dye-Sensitized Solar Cells and Modules J. Phys. D: Appl. Phys. 2017, 50, 033001 DOI: 10.1088/1361-6463/50/3/033001Google Scholar62https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXpslKnu7o%253D&md5=65555e8925515c8fe78155721e13e336Stability issues pertaining large area perovskite and dye-sensitized solar cells and modulesCastro-Hermosa, S.; Yadav, S. K.; Vesce, L.; Guidobaldi, A.; Reale, A.; Di Carlo, A.; Brown, T. M.Journal of Physics D: Applied Physics (2017), 50 (3), 033001/1-033001/31CODEN: JPAPBE; ISSN:0022-3727. (IOP Publishing Ltd.)Perovskite and dye-sensitized solar cells are PV technologies which hold promise for PV application. Arguably, the biggest issue facing these technologies is stability. The vast majority of studies have been limited to small area lab. cells. Moisture, oxygen, UV light, thermal and elec. stresses are leading the degrdn. causes. There remains a shortage of stability investigations on large area devices, in particular modules. At the module level there exist particular challenges which can be different from those at the small cell level such as encapsulation (not only of the unit cells but of interconnections and contacts), non-uniformity of the layer stacks and unit cells, reverse bias stresses, which are important to investigate for technologies that aim for industrial acceptance. Herein we present a review of stability investigations published in the literature pertaining large area perovskite and dye-sensitized solar devices fabricated both on rigid (glass) and flexible substrates.
- 63Campbell, B. J.; Stokes, H. T.; Tanner, D. E.; Hatch, D. M. ISODISPLACE: a Web-Based Tool for Exploring Structural Distortions J. Appl. Crystallogr. 2006, 39, 607– 614 DOI: 10.1107/S0021889806014075Google Scholar63https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XntFGlt7c%253D&md5=358251d9c9f5b623b43c2bbcd4492901ISODISPLACE. A web-based tool for exploring structural distortionsCampbell, Branton J.; Stokes, Harold T.; Tanner, David E.; Hatch, Dorian M.Journal of Applied Crystallography (2006), 39 (4), 607-614CODEN: JACGAR; ISSN:0021-8898. (Blackwell Publishing Ltd.)ISODISPLACE is a new internet-server tool for exploring structural phase transitions. Given parent-phase structural information, it generates at. displacement patterns induced by irreducible representations of the parent space-group symmetry and allows a user to visualize and manipulate the amplitude of each distortion mode interactively. ISODISPLACE is freely accessible at http://stokes.byu.edu/isodisplace.html via common internet browsers.
- 64Perez-Mato, J. M.; Orobengoa, D.; Aroyo, M. I. Mode Crystallography of Distorted Structures Acta Crystallogr., Sect. A: Found. Crystallogr. 2010, 66, 558– 590 DOI: 10.1107/S0108767310016247Google Scholar64https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXhtVeku7vP&md5=f8ae814ab6bed111332487e7bfc77860Mode crystallography of distorted structuresPerez-Mato, J. M.; Orobengoa, D.; Aroyo, M. I.Acta Crystallographica, Section A: Foundations of Crystallography (2010), 66 (5), 558-590CODEN: ACACEQ; ISSN:0108-7673. (International Union of Crystallography)A review. The description of displacive distorted structures in terms of symmetry-adapted modes is reviewed. A specific parameterization of the symmetry-mode decompn. of these pseudosym. structures defined on the setting of the exptl. space group is proposed. This approach closely follows crystallog. conventions and permits a straightforward transformation between symmetry-mode and conventional descriptions of the structures. Multiple examples are presented showing the insight provided by the symmetry-mode approach. The methodol. is shown at work, illustrating its various possibilities for improving the characterization of distorted structures, for example: detection of hidden structural correlations, identification of fundamental and marginal degrees of freedom, redn. of the effective no. of at. positional parameters, quant. comparison of structures with the same or different space group, detection of false refinement min., systematic characterization of thermal behavior, rationalization of phase diagrams and various symmetries in families of compds. etc. The close relation of the symmetry-mode description with the superspace formalism applied to commensurate superstructures is also discussed. Finally, the application of this methodol. in the field of ab initio or first-principles calcns. is outlined. At present, there are several freely available user-friendly computer tools for performing automatic symmetry-mode analyses. The use of these programs does not require a deep knowledge of group theory and can be applied either a posteriori to analyze a given distorted structure or a priori to parameterize the structure to be detd. It is hoped that this article will encourage the use of these tools. All the examples presented here have been worked out using the program AMPLIMODES.
- 65Patterson, A. L. Homometric Structures Nature 1939, 143, 939– 940 DOI: 10.1038/143939b0Google ScholarThere is no corresponding record for this reference.
- 66van Smaalen, S.; Lam, E. J.; Lüdecke, J. Structure of the Charge-Density Wave in(TaSe4)2I J. Phys.: Condens. Matter 2001, 13, 9923– 9936 DOI: 10.1088/0953-8984/13/44/308Google Scholar66https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3MXovVent7w%253D&md5=b9891810b61f0689387db4051d62d510Structure of the charge-density wave in (TaSe4)2IVan Smaalen, Sander; Lam, Erwin J.; Ludecke, JensJournal of Physics: Condensed Matter (2001), 13 (44), 9923-9936CODEN: JCOMEL; ISSN:0953-8984. (Institute of Physics Publishing)(TaSe4)2I is a quasi-one-dimensional (1D) elec. conductor. It exhibits a phase transition at TCDW = 263 K towards a charge-d.-wave (CDW) state at low temps. We report a full structure refinement of the incommensurately modulated structure in the CDW state at T = 110 K against synchrotron radiation, single-crystal x-ray diffraction data. At room temp. the crystal structure has tetragonal symmetry with space group I422. In the CDW state each main reflection in the x-ray scattering is surrounded by eight incommensurate satellites at (±0.064, ±0.064, ±0.151). The CDW state is found to comprise four domains, and it is characterized by one modulation wavevector. With respect to a 2 × 2 × 1 supercell it has the symmetry of the superspace group F2(0, β, γ) with β = 0.128 and γ = 0.151. The first part of the modulation is found to be a transverse acoustic wave, involving amplitudes of similar magnitudes of about 0.13 Å on all atoms. The second part of the modulation involves displacements of the Ta atoms of about 0.03 Å, that are parallel to the 1D chains. These are interpreted as reflecting the CDW. A Landau free-energy model is developed, that shows that symmetry arguments allow the phase transition to be second order.
- 67Fourcroy, P. H.; Carre, D.; Thevet, F.; Rivet, J. Structure du Tetraiodure de Cuivre(I) et de Bismuth(III), CuBiI4 Acta Crystallogr., Sect. C: Cryst. Struct. Commun. 1991, 47, 2023– 2025 DOI: 10.1107/S0108270191005309Google ScholarThere is no corresponding record for this reference.
- 68Lintereur, A. T.; Qiu, W.; Nino, J. C.; Baciak, J. Characterization of Bismuth Tri-Iodide Single Crystals for Wide Band-Gap Semiconductor Radiation Detectors Nucl. Instrum. Methods Phys. Res., Sect. A 2011, 652, 166– 169 DOI: 10.1016/j.nima.2010.12.013Google Scholar68https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXhtF2jtbfM&md5=c7daaa87d5593062f6341ba36ce710b4Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectorsLintereur, Azaree T.; Qiu, Wei; Nino, Juan C.; Baciak, JamesNuclear Instruments & Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment (2011), 652 (1), 166-169CODEN: NIMAER; ISSN:0168-9002. (Elsevier B.V.)Bismuth tri-iodide is a wide band-gap semiconductor material that may be able to operate as a radiation detector without any cooling mechanism. This material has a higher effective at. no. than germanium and CdZnTe, and thus should have a higher gamma-ray detection efficiency, particularly for moderate and high energy gamma-rays. Unfortunately, not much is known about bismuth tri-iodide, and the general properties of the material need to be investigated. Bismuth tri-iodide does not suffer from some of the material issues, such as a solid state phase transition and dissocn. in air, that mercuric iodide (another high-Z, wide band-gap semiconductor) does. Thus, bismuth tri-iodide is both easier to grow and handle than mercuric iodide. A modified vertical Bridgman growth technique is being used to grow large, single bismuth tri-iodide crystals. Zone refining is being performed to purify the starting material and increase the resistivity of the crystals. The single crystals being grown are typically several hundred mm3. The larger crystals grown are approx. 2 cm3. Initial detectors are being fabricated using both gold and palladium electrodes and palladium wire. The electron mobility measured using an alpha source was detd. to be 260±50 cm2/Vs. An alpha spectrum was recorded with one of the devices; however the detector appears to suffer from polarization.
- 69Standard Tables for Reference Solar Spectral Irradiances: Direct Normal and Hemispherical on 37°C; Tilted Surface; ASTM International: 2012.Google ScholarThere is no corresponding record for this reference.
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Abstract
Figure 1
Figure 1. (a) Quarter of the Bi–Ag–I phase diagram showing SEM EDX compositional measurements of Ag1–3xBi1+xI4 powder (black), polycrystalline film (green), plate crystal with CdCl2 structure (red), and octahedral-faceted crystal (blue) on the Ag1–3xBi1+xI4 charge balance line with previously reported compositions (orange). (b) Dashed zone enlarged around the AgBiI4x = 0 point showing additional octahedral-faceted (blue) and plate (red) crystal measurements. Also shown is the nominal x = 0.07 composition used for sealed tube synthesis (orange). Circles represent average compositions, and hashed areas represent the 1σ statistical spread. Areas labeled A and B are the plate and octahedral-faceted crystals used for the structural study (Section 3.2). Areas labeled 1 and 2 correspond to the polycrystalline films used for absorption coefficient measurements (Section 3.3).
Figure 2
Figure 2. PXRD and Rietveld refinements of AgBiI4 synchrotron data for (a) CdCl2-type and (b) defect-spinel structures, with the structures inset. Tick marks in (b) show the absence of expected Bragg intensity due to the increased cell size of the cubic cell.
Figure 3
Figure 3. (a) Reported crystal structure of BiI3, (51) showing its layered structure in which layers of edge-sharing octahedra are occupied by 2/3 Bi3+ cations and 1/3 vacancies and alternate with entirely vacant layers. The iodide packing is hexagonally close-packed (ABA). (b) Cubic defect-spinel structure of AgBiI4 is shown in its trigonal setting, for comparison to BiI3 and the CdCl2 structure. The interstitial octahedral sites are occupied by mixed silver and bismuth in alternating layers of 3/4 and 1/4 occupancy. (c) CdCl2-type structure of AgBiI4 with doubled a and b directions showing layered structure with alternating fully occupied and entirely vacant layers. In both (b) and (c) the iodide packing is cubic close-packed (ABC). The dimensions of a CdCl2 single cell are shown in blue in all panels to show the relationship between the different unit cells.
Figure 4
Figure 4. Reconstructed SCXRD pattern from the ⟨011̅⟩ plane of the Fd3̅m cubic cell. Indexing this pattern to the cubic Fd3̅m cell reveals several allowed Bragg peaks with zero intensity (e.g., the expected [220] reflection is indicated by a green circle and arrow). Alternatively, the pattern can be indexed to two rhombohedral R3̅m twins (red and blue circles), with the [001] axis of the rhombohedral cell aligned along the [111] axis of the cubic cell. Uncircled peaks arise from the rock salt sublattice and are common to all twins. This solution has no zero-intensity allowed Bragg peaks. Note that while two rhombohedral R3̅m twins are required to fit this particular region of reciprocal space, by extension four rhombohedral R3̅m twins are required to fit the full data set.
Figure 5
Figure 5. (a) UV–visible spectroscopy optical absorbance data for sealed tube synthesized powder (red), polycrystalline films 1 (blue) and 2 (green), and BiI3 powder (black) plotted against the AM1.5 solar spectrum (gray). (69) (b) Tauc plot for indirect band gaps calculated using the Kubelka–Munk function F(R) obtained via diffuse reflectance measurements for the sealed tube synthesized powder (red), polycrystalline films 1 (blue) and film 2 (green), and BiI3 powder (black). (c) Absorption coefficient of films 1 (blue) and 2 (green). The shaded areas in (c) indicate the error limits, derived from the standard deviations of the measured film thicknesses.
Figure 6
Figure 6. (a) XPS spectra of the valence band of pellets of AgBiI4 (red) and BiI3 (black) showing the main Ag 4d contribution is to the bottom of the valence band. DOS calculations for the lowest energy defect-spinel and CdCl2 structures are shown in (b) and (c), respectively.
Figure 7
Figure 7. (a) Seebeck coefficient measured from 210 to 300 K on bulk AgBiI4. (b) Resistivity of bulk AgBiI4 measured from 190 to 300 K.
Figure 8
Figure 8. Halide (green) connectivity (red) is shown for AgBiI4 and the bismuth halide semiconductors with previously reported optical gaps. Bismuth is shown in purple and cations in yellow. BiI3 shows uninterrupted hexagonal close packed iodide sublattice, and both the CdCl2 and defect-spinel structures of AgBiI4 show uninterrupted cubic close packed iodide sublattices. In the double perovskites Cs2AgBiX6 (X = Br, Cl), one-fourth of the anions in the close packed iodide sublattice are replaced by large Cs+ cations, in the perovskite-type structure. The same level of cation substitution is observed in hexagonal iodide layers within (CH3NH3)BiI4, (NH4)3Bi2I9, A3Bi2I9 (A = K, Rb, Cs), and (CH3NH3)2KBiCl6. All compounds with structures where cations replace I– anions within the hexagonal layers have optical gaps above 1.9 eV, (26-30, 32) where those with pure iodide layers have optical gaps of 1.6–1.8 eV.
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- 1Shockley, W.; Queisser, H. J. Detailed Balance Limit of Efficiency of p-n Junction Solar Cells J. Appl. Phys. 1961, 32, 510– 519 DOI: 10.1063/1.1736034Google Scholar1https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaF3MXpslGqsQ%253D%253D&md5=bfba68acf98577c50912406e2cd24c13Detailed balance limit of efficiency of p-n junction solar cellsShockley, William; Queisser, Hans J.Journal of Applied Physics (1961), 32 (), 510-19CODEN: JAPIAU; ISSN:0021-8979.In order to find an upper theoretical limit for the efficiency of p-n junction solar energy converters, a limiting efficiency, called the detailed balance limit of efficiency, has been calcd. for an ideal case in which the only recombination mechanism of hole-electron pairs is radiative, as required by the principle of detailed balance. The efficiency is also calcd. for the case in which radiative recombination is only a fixed fraction fc of the total recombination, the rest being nonradiative. Efficiencies at the matched loads were calcd. with band gap and fc as parameters, the sun and cell being assumed to be black bodies with temps. of 6000°K. and 300°K., resp. The max. efficiency is 30% for an energy gap of 1.1 e.v. and fc = 1. Actual junctions do not obey the predicted current-voltage relation, and reasons for the difference and its relevance to efficiency are discussed.
- 2Yakunin, S.; Sytnyk, M.; Kriegner, D.; Shrestha, S.; Richter, M.; Matt, G. J.; Azimi, H.; Brabec, C. J.; Stangl, J.; Kovalenko, M. V.; Heiss, W. Detection of X-ray Photons by Solution-Processed Lead Halide Perovskites Nat. Photonics 2015, 9, 444– 449 DOI: 10.1038/nphoton.2015.82Google Scholar2https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhtFeis7%252FF&md5=00458e565c900fcdc547ce9bfe58534dDetection of X-ray photons by solution-processed lead halide perovskitesYakunin, Sergii; Sytnyk, Mykhailo; Kriegner, Dominik; Shrestha, Shreetu; Richter, Moses; Matt, Gebhard J.; Azimi, Hamed; Brabec, Christoph J.; Stangl, Julian; Kovalenko, Maksym V.; Heiss, WolfgangNature Photonics (2015), 9 (7), 444-449CODEN: NPAHBY; ISSN:1749-4885. (Nature Publishing Group)The evolution of real-time medical diagnostic tools such as angiog. and computer tomog. from radiog. based on photog. plates was enabled by the development of integrated solid-state X-ray photon detectors made from conventional solid-state semiconductors. Recently, for optoelectronic devices operating in the visible and near-IR spectral regions, soln.-processed org. and inorg. semiconductors have also attracted a great deal of attention. Here, we demonstrate a possibility to use such inexpensive semiconductors for the sensitive detection of X-ray photons by direct photon-to-current conversion. In particular, methylammonium lead iodide perovskite (CH3NH3PbI3) offers a compelling combination of fast photoresponse and a high absorption cross-section for X-rays, owing to the heavy Pb and I atoms. Soln.-processed photodiodes as well as photoconductors are presented, exhibiting high values of X-ray sensitivity (up to 25 μC mGyair-1 cm-3) and responsivity (1.9 × 104 carriers/photon), which are commensurate with those obtained by the current solid-state technol.
- 3Wehrenfennig, C.; Eperon, G. E.; Johnston, M. B.; Snaith, H. J.; Herz, L. M. High Charge Carrier Mobilities and Lifetimes in Organolead Trihalide Perovskites Adv. Mater. (Weinheim, Ger.) 2014, 26, 1584– 1589 DOI: 10.1002/adma.201305172Google Scholar3https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvFOlsLrL&md5=4e4bbd6966147225a8c37fcf25a01ccfHigh Charge Carrier Mobilities and Lifetimes in Organolead Trihalide PerovskitesWehrenfennig, Christian; Eperon, Giles E.; Johnston, Michael B.; Snaith, Henry J.; Herz, Laura M.Advanced Materials (Weinheim, Germany) (2014), 26 (10), 1584-1589CODEN: ADVMEW; ISSN:0935-9648. (Wiley-VCH Verlag GmbH & Co. KGaA)The authors find that methylammonium lead trihalide perovskites are particularly well-suited as light absorbers and charge transporters in photovoltaic cells because they allow for an unexpected combination of both low charge recombination rates and high charge-carrier mobilities. The authors establish lower bounds of-10 cm2 V-1 s'1 for the high-frequency charge mobility, which is remarkably high for a soln.-processed material. The planar heterojunction photovoltaic cells may only be achieved because the ratio of bimol. charge recombination rate to charge mobility is over four orders of magnitude lower than that predicted from Langevin theory. Such effects are likely to arise from spatial sepn. of opposite charge carriers within the metal-halide structure or across a cryst. domain. Modeling and tuning recombination channels, e.g. through halide and metal substitutions, or crystallite size, will hold the clue to raising material performance.
- 4Ponseca, C. S.; Savenije, T. J.; Abdellah, M.; Zheng, K.; Yartsev, A.; Pascher, T.; Harlang, T.; Chabera, P.; Pullerits, T.; Stepanov, A.; Wolf, J.-P.; Sundström, V. Organometal Halide Perovskite Solar Cell Materials Rationalized: Ultrafast Charge Generation, High and Microsecond-Long Balanced Mobilities, and Slow Recombination J. Am. Chem. Soc. 2014, 136, 5189– 5192 DOI: 10.1021/ja412583tGoogle Scholar4https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXkslals7o%253D&md5=12d502ed7624c85547fe3b29c98ca7faOrganometal halide perovskite solar cell materials rationalized: ultrafast charge generation, high and microsecond-long balanced mobilities, and slow recombinationPonseca, Carlito S.; Savenije, Tom J.; Abdellah, Mohamed; Zheng, Kaibo; Yartsev, Arkady; Pascher, Tobjoern; Harlang, Tobias; Chabera, Pavel; Pullerits, Tonu; Stepanov, Andrey; Wolf, Jean-Pierre; Sundstroem, VillyJournal of the American Chemical Society (2014), 136 (14), 5189-5192CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)Organometal halide perovskite-based solar cells have recently been reported to be highly efficient, giving an overall power conversion efficiency of up to 15%. However, much of the fundamental photophys. properties underlying this performance has remained unknown. Here, we apply photoluminescence, transient absorption, time-resolved terahertz and microwave cond. measurements to det. the time scales of generation and recombination of charge carriers as well as their transport properties in soln.-processed CH3NH3PbI3 perovskite materials. We found that electron-hole pairs are generated almost instantaneously after photoexcitation and dissoc. in 2 ps forming highly mobile charges (25 cm2 V-1 s-1) in the neat perovskite and in perovskite/alumina blends; almost balanced electron and hole mobilities remain very high up to the microsecond time scale. When the perovskite is introduced into a TiO2 mesoporous structure, electron injection from perovskite to the metal oxide is efficient in less than a picosecond, but the lower intrinsic electron mobility of TiO2 leads to unbalanced charge transport. Microwave cond. measurements showed that the decay of mobile charges is very slow in CH3NH3PbI3, lasting up to tens of microseconds. These results unravel the remarkable intrinsic properties of CH3NH3PbI3 perovskite material if used as light absorber and charge transport layer. Moreover, finding a metal oxide with higher electron mobility may further increase the performance of this class of solar cells.
- 5Brenner, T. M.; Egger, D. A.; Kronik, L.; Hodes, G.; Cahen, D. Hybrid Organic—Inorganic Perovskites: Low-Cost Semiconductors with Intriguing Charge-Transport Properties Nature Reviews Materials 2016, 1, 15007 DOI: 10.1038/natrevmats.2015.7Google Scholar5https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXhtVertrs%253D&md5=8c0f4b72ff043b7b8d289e54bd4ea954Hybrid organic-inorganic perovskites: low-cost semiconductors with intriguing charge-transport propertiesBrenner, Thomas M.; Egger, David A.; Kronik, Leeor; Hodes, Gary; Cahen, DavidNature Reviews Materials (2016), 1 (1), 15007CODEN: NRMADL; ISSN:2058-8437. (Nature Publishing Group)Soln.-processed hybrid org.-inorg. perovskites (HOIPs) exhibit long electronic carrier diffusion lengths, high optical absorption coeffs. and impressive photovoltaic device performance. Recent results allow us to compare and contrast HOIP charge-transport characteristics to those of III-V semiconductors - benchmarks of photovoltaic (and light-emitting and laser diode) performance. In this Review, we summarize what is known and unknown about charge transport in HOIPs, with particular emphasis on their advantages as photovoltaic materials. Exptl. and theor. findings are integrated into one narrative, in which we highlight the fundamental questions that need to be addressed regarding the charge-transport properties of these materials and suggest future research directions.
- 6Xing, G.; Mathews, N.; Sun, S.; Lim, S. S.; Lam, Y. M.; Grätzel, M.; Mhaisalkar, S.; Sum, T. C. Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH3NH3PbI3 Science 2013, 342, 344– 347 DOI: 10.1126/science.1243167Google Scholar6https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhs1Wltr3F&md5=9dc3f04cc33feed170cdda46bb0c31afLong-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH3NH3PbI3Xing, Guichuan; Mathews, Nripan; Sun, Shuangyong; Lim, Swee Sien; Lam, Yeng Ming; Graetzel, Michael; Mhaisalkar, Subodh; Sum, Tze ChienScience (Washington, DC, United States) (2013), 342 (6156), 344-347CODEN: SCIEAS; ISSN:0036-8075. (American Association for the Advancement of Science)Low-temp. soln.-processed photovoltaics suffer from low efficiencies because of poor exciton or electron-hole diffusion lengths (typically ∼10 nm). Recent reports of highly efficient CH3NH3PbI3-based solar cells in a broad range of configurations raise a compelling case for understanding the fundamental photophys. mechanisms in these materials. By applying femtosecond transient optical spectroscopy to bilayers that interface this perovskite with either selective-electron or selective-hole extn. materials, the authors have uncovered concrete evidence of balanced long-range electron-hole diffusion lengths of at least 100 nm in soln.-processed CH3NH3PbI3. The high photoconversion efficiencies of these systems stem from the comparable optical absorption length and charge-carrier diffusion lengths, transcending the traditional constraints of soln.-processed semiconductors.
- 7Stranks, S. D.; Eperon, G. E.; Grancini, G.; Menelaou, C.; Alcocer, M. J. P.; Leijtens, T.; Herz, L. M.; Petrozza, A.; Snaith, H. J. Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber Science 2013, 342, 341– 344 DOI: 10.1126/science.1243982Google Scholar7https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhs1Wltr3K&md5=778d36c5248252123f92469b69be0426Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite AbsorberStranks, Samuel D.; Eperon, Giles E.; Grancini, Giulia; Menelaou, Christopher; Alcocer, Marcelo J. P.; Leijtens, Tomas; Herz, Laura M.; Petrozza, Annamaria; Snaith, Henry J.Science (Washington, DC, United States) (2013), 342 (6156), 341-344CODEN: SCIEAS; ISSN:0036-8075. (American Association for the Advancement of Science)Org.-inorg. perovskites showed promise as high-performance absorbers in solar cells, 1st as a coating on a mesoporous metal oxide scaffold and more recently as a solid layer in planar heterojunction architectures. Here, the authors report transient absorption and photoluminescence-quenching measurements to det. the electron-hole diffusion lengths, diffusion consts., and lifetimes in mixed halide (MeNH3PbI3-xClx) and triiodide (MeNH3PbI3) perovskite absorbers. The diffusion lengths are >1 μm in the mixed halide perovskite, which is an order of magnitude greater than the absorption depth. But the triiodide absorber has electron-hole diffusion lengths of about 100 nm. These results justify the high efficiency of planar heterojunction perovskite solar cells and identify a crit. parameter to optimize for future perovskite absorber development.
- 8Sharenko, A.; Toney, M. F. Relationships between Lead Halide Perovskite Thin-Film Fabrication, Morphology, and Performance in Solar Cells J. Am. Chem. Soc. 2016, 138, 463– 470 DOI: 10.1021/jacs.5b10723Google Scholar8https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XmtFKjtA%253D%253D&md5=92f927297bc19383f00294df8333a571Relationships between Lead Halide Perovskite Thin-Film Fabrication, Morphology, and Performance in Solar CellsSharenko, Alexander; Toney, Michael F.Journal of the American Chemical Society (2016), 138 (2), 463-470CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)A review. Soln.-processed lead halide perovskite thin-film solar cells have achieved power conversion efficiencies comparable to those obtained with several com. photovoltaic technologies in a remarkably short period of time. This rapid rise in device efficiency is largely the result of the development of fabrication protocols capable of producing continuous, smooth perovskite films with micrometer-sized grains. Further developments in film fabrication and morphol. control are necessary, however, in order for perovskite solar cells to reliably and reproducibly approach their thermodn. efficiency limit. This Perspective discusses the fabrication of lead halide perovskite thin films, while highlighting the processing-property-performance relationships that have emerged from the literature, and from this knowledge, suggests future research directions.
- 9Liu, M.; Johnston, M. B.; Snaith, H. J. Efficient Planar Heterojunction Perovskite Solar Cells by Vapour Deposition Nature 2013, 501, 395– 398 DOI: 10.1038/nature12509Google Scholar9https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhsVWrurbE&md5=a434d6ef282dbee9448991f9887261efEfficient planar heterojunction perovskite solar cells by vapour depositionLiu, Mingzhen; Johnston, Michael B.; Snaith, Henry J.Nature (London, United Kingdom) (2013), 501 (7467), 395-398CODEN: NATUAS; ISSN:0028-0836. (Nature Publishing Group)Many different photovoltaic technologies are being developed for large-scale solar energy conversion. The wafer-based 1st-generation photovoltaic devices have been followed by thin-film solid semiconductor absorber layers sandwiched between 2 charge-selective contacts and nanostructured (or mesostructured) solar cells that rely on a distributed heterojunction to generate charge and to transport pos. and neg. charges in spatially sepd. phases. Although many materials have been used in nanostructured devices, the goal of attaining high-efficiency thin-film solar cells in such a way has yet to be achieved. Organometal halide perovskites have recently emerged as a promising material for high-efficiency nanostructured devices. Nanostructuring is not necessary to achieve high efficiencies with this material: a simple planar heterojunction solar cell incorporating vapor-deposited perovskite as the absorbing layer can have solar-to-elec. power conversion efficiencies of over 15 per cent (as measured under simulated full sunlight). Perovskite absorbers can function at the highest efficiencies in simplified device architectures, without the need for complex nanostructures.
- 10Habisreutinger, S. N.; Leijtens, T.; Eperon, G. E.; Stranks, S. D.; Nicholas, R. J.; Snaith, H. J. Carbon Nanotube/Polymer Composites as a Highly Stable Hole Collection Layer in Perovskite Solar Cells Nano Lett. 2014, 14, 5561– 5568 DOI: 10.1021/nl501982bGoogle Scholar10https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXhsFKgu7bO&md5=4ca359c64931ba6e858c5b3e5569747bCarbon Nanotube/Polymer Composites as a Highly Stable Hole Collection Layer in Perovskite Solar CellsHabisreutinger, Severin N.; Leijtens, Tomas; Eperon, Giles E.; Stranks, Samuel D.; Nicholas, Robin J.; Snaith, Henry J.Nano Letters (2014), 14 (10), 5561-5568CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)Org.-inorg. perovskite solar cells have recently emerged at the forefront of photovoltaics research. Power conversion efficiencies have experienced an unprecedented increase to reported values exceeding 19% within just four years. With the focus mainly on efficiency, the aspect of stability has so far not been thoroughly addressed. In this paper, the thermal stability is identified as a fundamental weak point of perovskite solar cells, and an elegant approach is demonstrated to mitigating thermal degrdn. by replacing the org. hole transport material with polymer-functionalized single-walled carbon nanotubes (SWNTs) embedded in an insulating polymer matrix. With this composite structure, JV scanned power-conversion efficiencies are obtained of up to 15.3% with an av. efficiency of 10 ± 2%. Moreover, strong retardation is obsd. in thermal degrdn. as compared to cells employing state-of-the-art org. hole-transporting materials. In addn., the resistance to water ingress is remarkably enhanced. These are crit. developments for achieving long-term stability of high-efficiency perovskite solar cells.
- 11Bag, M.; Renna, L. A.; Adhikari, R. Y.; Karak, S.; Liu, F.; Lahti, P. M.; Russell, T. P.; Tuominen, M. T.; Venkataraman, D. Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer Stability J. Am. Chem. Soc. 2015, 137, 13130– 13137 DOI: 10.1021/jacs.5b08535Google Scholar11https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhsFKru7nM&md5=0ee3245ac65b7d7f11295139ffb6c607Kinetics of Ion Transport in Perovskite Active Layers and Its Implications for Active Layer StabilityBag, Monojit; Renna, Lawrence A.; Adhikari, Ramesh Y.; Karak, Supravat; Liu, Feng; Lahti, Paul M.; Russell, Thomas P.; Tuominen, Mark T.; Venkataraman, D.Journal of the American Chemical Society (2015), 137 (40), 13130-13137CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)Solar cells fabricated using alkyl ammonium metal halides as light absorbers have the right combination of high power conversion efficiency and ease of fabrication to realize inexpensive but efficient thin film solar cells. However, they degrade under prolonged exposure to sunlight. Herein, we show that this degrdn. is quasi-reversible, and that it can be greatly lessened by simple modifications of the solar cell operating conditions. We studied perovskite devices using electrochem. impedance spectroscopy (EIS) with methylammonium (MA)-, formamidinium (FA)-, and MAxFA1-x lead triiodide as active layers. From variable temp. EIS studies, we found that the diffusion coeff. using MA ions was greater than when using FA ions. Structural studies using powder X-ray diffraction (PXRD) show that for MAPbI3 a structural change and lattice expansion occurs at device operating temps. On the basis of EIS and PXRD studies, we postulate that in MAPbI3 the predominant mechanism of accelerated device degrdn. under sunlight involves thermally activated fast ion transport coupled with a lattice-expanding phase transition, both of which are facilitated by absorption of the IR component of the solar spectrum. Using these findings, we show that the devices show greatly improved operation lifetimes and stability under white-light emitting diodes, or under a solar simulator with an IR cutoff filter or with cooling.
- 12Aristidou, N.; Sanchez-Molina, I.; Chotchuangchutchaval, T.; Brown, M.; Martinez, L.; Rath, T.; Haque, S. A. The Role of Oxygen in the Degradation of Methylammonium Lead Trihalide Perovskite Photoactive Layers Angew. Chem., Int. Ed. 2015, 54, 8208– 8212 DOI: 10.1002/anie.201503153Google Scholar12https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXptFeqsr4%253D&md5=9d2eecabe3032b9dea8f33ef842d2a61The Role of Oxygen in the Degradation of Methylammonium Lead Trihalide Perovskite Photoactive LayersAristidou, Nicholas; Sanchez-Molina, Irene; Chotchuangchutchaval, Thana; Brown, Michael; Martinez, Luis; Rath, Thomas; Haque, Saif A.Angewandte Chemie, International Edition (2015), 54 (28), 8208-8212CODEN: ACIEF5; ISSN:1433-7851. (Wiley-VCH Verlag GmbH & Co. KGaA)In this paper we report on the influence of light and oxygen on the stability of CH3NH3PbI3 perovskite-based photoactive layers. When exposed to both light and dry air the mp-Al2O3/CH3NH3PbI3 photoactive layers rapidly decomp. yielding methylamine, PbI2, and I2 as products. We show that this degrdn. is initiated by the reaction of superoxide (O2-) with the methylammonium moiety of the perovskite absorber. Fluorescent mol. probe studies indicate that the O2- species is generated by the reaction of photoexcited electrons in the perovskite and mol. oxygen. We show that the yield of O2- generation is significantly reduced when the mp-Al2O3 film is replaced with an mp-TiO2 electron extn. and transport layer. The present findings suggest that replacing the methylammonium component in CH3NH3PbI3 to a species without acid protons could improve tolerance to oxygen and enhance stability.
- 13Panda, P. K. Review: Environmental Friendly Lead-Free Piezoelectric Materials J. Mater. Sci. 2009, 44, 5049– 5062 DOI: 10.1007/s10853-009-3643-0Google Scholar13https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXotF2msrY%253D&md5=aa033dbe025b8fdc09c818790372e4faReview: environmental friendly lead-free piezoelectric materialsPanda, P. K.Journal of Materials Science (2009), 44 (19), 5049-5062CODEN: JMTSAS; ISSN:0022-2461. (Springer)A review. Lead zirconate titanate (PZT)-based piezoelec. materials are well known for their excellent piezoelec. properties. However, considering the toxicity of lead and its compds., there is a general awareness for the development of environmental friendly lead-free materials as evidenced from the legislation passed by the European Union to this effect. Several classes of materials are now being considered as potentially attractive alternatives to PZTs for specific applications. In this paper, attempts have been made to review the recent developments on lead-free piezo materials emphasizing on their prepn., structure-property correlation, etc. In this context, perovskite systems such as bismuth sodium titanate, alkali niobates (ANbO3), etc. and non-perovskites such as bismuth layer-structured ferroelecs. are reviewed in detail. From the above study, it is concluded that some lead-free compns. show stable piezoelec. responses even though they do not match the overall performance of PZT. This has been the stimulant for growing research on this subject. This topic is of current interest to the researchers worldwide as evidenced from the large no. of research publications. This has motivated us to come out with a review article with a view that it would give further impetus to the researchers already working in this area and also draw the attention of others.
- 14Stoumpos, C. C.; Malliakas, C. D.; Kanatzidis, M. G. Semiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent Properties Inorg. Chem. 2013, 52, 9019– 9038 DOI: 10.1021/ic401215xGoogle Scholar14https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhtVGqsL3N&md5=94c35d645dcd9770b4097d0bd440269bSemiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent PropertiesStoumpos, Constantinos C.; Malliakas, Christos D.; Kanatzidis, Mercouri G.Inorganic Chemistry (2013), 52 (15), 9019-9038CODEN: INOCAJ; ISSN:0020-1669. (American Chemical Society)A broad org.-inorg. series of hybrid metal iodide perovskites AMI3, where A is the methylammonium (MeNH3+) or formamidinium (HC(NH2)2+) cation and M is Sn (1 and 2) or Pb (3 and 4) are reported. The compds. were prepd. through a variety of synthetic approaches, and the nature of the resulting materials is discussed in terms of their thermal stability and optical and electronic properties. The chem. and phys. properties of these materials strongly depend on the prepn. method. Single crystal x-ray diffraction anal. of 1-4 classifies the compds. in the perovskite structural family. Structural phase transitions were obsd. and studied by temp.-dependent single crystal x-ray diffraction in the 100-400 K range. The charge transport properties of the materials are discussed in conjunction with diffuse reflectance studies in the mid-IR region that display characteristic absorption features. Temp.-dependent studies show a strong dependence of the resistivity as a function of the crystal structure. Optical absorption measurements indicate that 1-4 behave as direct-gap semiconductors with energy band gaps distributed at 1.25-1.75 eV. The compds. exhibit an intense near-IR luminescence (PL) emission in the 700-1000 nm range (1.1-1.7 eV) at room temp. Solid solns. between the Sn and Pb compds. are readily accessible throughout the compn. range. The optical properties such as energy band gap, emission intensity, and wavelength can be readily controlled for the isostructural series of solid solns. MeNH3Sn1-xPbxI3 (5). The charge transport type in these materials was characterized by Seebeck coeff. and Hall-effect measurements. The compds. behave as p- or n-type semiconductors depending on the prepn. method. The samples with the lowest carrier concn. are prepd. from soln. and are n-type; p-type samples can be obtained through solid state reactions exposed in air in a controllable manner. In the case of Sn compds., there is a facile tendency toward oxidn. which causes the materials to be doped with Sn4+ and thus behave as p-type semiconductors displaying metal-like cond. The compds. appear to possess very high estd. electron and hole mobilities that exceed 2000 cm2/(V s) and 300 cm2/(V s), resp., as shown in the case of MeNH3SnI3 (1). The authors also compare the properties of the title hybrid materials with those of the all-inorg. CsSnI3 and CsPbI3 prepd. using identical synthetic methods.
- 15Koh, T. M.; Fu, K.; Fang, Y.; Chen, S.; Sum, T. C.; Mathews, N.; Mhaisalkar, S. G.; Boix, P. P.; Baikie, T. Formamidinium-Containing Metal-Halide: An Alternative Material for Near-IR Absorption Perovskite Solar Cells J. Phys. Chem. C 2014, 118, 16458– 16462 DOI: 10.1021/jp411112kGoogle Scholar15https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhvFejtrzO&md5=66986587231dfe5b1e2b4589e83bf677Formamidinium-Containing Metal-Halide: An Alternative Material for Near-IR Absorption Perovskite Solar CellsKoh, Teck Ming; Fu, Kunwu; Fang, Yanan; Chen, Shi; Sum, T. C.; Mathews, Nripan; Mhaisalkar, Subodh G.; Boix, Pablo P.; Baikie, TomJournal of Physical Chemistry C (2014), 118 (30), 16458-16462CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)Solid-state, soln. processed solar-cells based on org.-inorg. Me ammonium lead halide absorbers have achieved efficiencies >15%, which has superseded liq. dye sensitized cells, as well as various thin film-based photovoltaics. This report introduces a new metal-halide perovskite, based on the formamidinium cation (HC-(NH2)2+), that displays a favorable band gap (1.47 eV) and represents a broader absorption compared to previously reported absorbers that contained the methylammonium cation (MeNH3+). The high open-circuit voltage (Voc = 0.97 V) and promising fill-factor (FF = 68.7%) yield an efficiency of 4.3%, which make this material an excellent candidate for this new class of perovskite solar cell. This report also studies the formation of a black trigonal (P3m1) perovskite polymorph and a yellow hexagonal non-perovskite (P63mc) polymorph. Further solar cell development would entail the stabilization of the black trigonal (P3m1) perovskite polymorph over the yellow hexagonal nonperovskite (P63mc) polymorph.
- 16Eperon, G. E.; Stranks, S. D.; Menelaou, C.; Johnston, M. B.; Herz, L. M.; Snaith, H. J. Formamidinium Lead Trihalide: a Broadly Tunable Perovskite for Efficient Planar Heterojunction Solar Cells Energy Environ. Sci. 2014, 7, 982– 988 DOI: 10.1039/c3ee43822hGoogle Scholar16https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXjtlKisLo%253D&md5=d9cfd92daf4fbbb092bfdbe4eed1fba4Formamidinium lead trihalide: a broadly tunable perovskite for efficient planar heterojunction solar cellsEperon, Giles E.; Stranks, Samuel D.; Menelaou, Christopher; Johnston, Michael B.; Herz, Laura M.; Snaith, Henry J.Energy & Environmental Science (2014), 7 (3), 982-988CODEN: EESNBY; ISSN:1754-5706. (Royal Society of Chemistry)Perovskite-based solar cells have attracted significant recent interest, with power conversion efficiencies in excess of 15% already superceding a no. of established thin-film solar cell technologies. Most work has focused on a methylammonium lead trihalide perovskites, with a bandgaps of ∼1.55 eV and greater. Here, we explore the effect of replacing the methylammonium cation in this perovskite, and show that with the slightly larger formamidinium cation, we can synthesize formamidinium lead trihalide perovskites with a bandgap tunable between 1.48 and 2.23 eV. We take the 1.48 eV-bandgap perovskite as most suited for single junction solar cells, and demonstrate long-range electron and hole diffusion lengths in this material, making it suitable for planar heterojunction solar cells. We fabricate such devices, and due to the reduced bandgap we achieve high short-circuit currents of >23 mA cm-2, resulting in power conversion efficiencies of up to 14.2%, the highest efficiency yet for soln. processed planar heterojunction perovskite solar cells. Formamidinium lead triiodide is hence promising as a new candidate for this class of solar cell.
- 17Kulbak, M.; Cahen, D.; Hodes, G. How Important Is the Organic Part of Lead Halide Perovskite Photovoltaic Cells? Efficient CsPbBr3 Cells J. Phys. Chem. Lett. 2015, 6, 2452– 2456 DOI: 10.1021/acs.jpclett.5b00968Google Scholar17https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhtVaksb3I&md5=2c21efab962ecdbecd4dfe43526d22cfHow Important Is the Organic Part of Lead Halide Perovskite Photovoltaic Cells? Efficient CsPbBr3 CellsKulbak, Michael; Cahen, David; Hodes, GaryJournal of Physical Chemistry Letters (2015), 6 (13), 2452-2456CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)Hybrid org.-inorg. lead halide perovskite photovoltaic cells have already surpassed 20% conversion efficiency in the few years that they have been seriously studied. However, many fundamental questions still remain unanswered as to why they are so good. One of these is "Is the org. cation really necessary to obtain high quality cells" In this study, we show that an all-inorg. version of the lead bromide perovskite material works equally well as the org. one, in particular generating the high open circuit voltages that are an important feature of these cells.
- 18Noel, N. K.; Stranks, S. D.; Abate, A.; Wehrenfennig, C.; Guarnera, S.; Haghighirad, A.-A.; Sadhanala, A.; Eperon, G. E.; Pathak, S. K.; Johnston, M. B.; Petrozza, A.; Herz, L. M.; Snaith, H. J. Lead-Free Organic-Inorganic Tin Halide Perovskites for Photovoltaic Applications Energy Environ. Sci. 2014, 7, 3061– 3068 DOI: 10.1039/C4EE01076KGoogle Scholar18https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXht1CltLvI&md5=4006ad5e9f014b5055c710294d3708cdLead-free organic-inorganic tin halide perovskites for photovoltaic applicationsNoel, Nakita K.; Stranks, Samuel D.; Abate, Antonio; Wehrenfennig, Christian; Guarnera, Simone; Haghighirad, Amir-Abbas; Sadhanala, Aditya; Eperon, Giles E.; Pathak, Sandeep K.; Johnston, Michael B.; Petrozza, Annamaria; Herz, Laura M.; Snaith, Henry J.Energy & Environmental Science (2014), 7 (9), 3061-3068CODEN: EESNBY; ISSN:1754-5706. (Royal Society of Chemistry)Already exhibiting solar to elec. power conversion efficiencies of over 17%, org.-inorg. lead halide perovskite solar cells are one of the most promising emerging contenders in the drive to provide a cheap and clean source of energy. One concern however, is the potential toxicol. issue of lead, a key component in the archetypical material. The most likely substitute is tin, which like lead, is also a group 14 metal. While org.-inorg. tin halide perovskites have shown good semiconducting behavior, the instability of tin in its 2+ oxidn. state has thus far proved to be an overwhelming challenge. Here, we report the first completely lead-free, CH3NH3SnI3 perovskite solar cell processed on a mesoporous TiO2 scaffold, reaching efficiencies of over 6% under 1 sun illumination. Remarkably, we achieve open circuit voltages over 0.88 V from a material which has a 1.23 eV band gap.
- 19Baikie, T.; Fang, Y.; Kadro, J. M.; Schreyer, M.; Wei, F.; Mhaisalkar, S. G.; Graetzel, M.; White, T. J. Synthesis and Crystal Chemistry of the Hybrid Perovskite (CH3NH3)PbI3 for Solid-State Sensitised Solar Cell Applications J. Mater. Chem. A 2013, 1, 5628– 5641 DOI: 10.1039/c3ta10518kGoogle Scholar19https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXmtF2isb8%253D&md5=aa26f1e37df912912faed0c8b37f757bSynthesis and crystal chemistry of the hybrid perovskite (CH3NH3)PbI3 for solid-state sensitised solar cell applicationsBaikie, Tom; Fang, Yanan; Kadro, Jeannette M.; Schreyer, Martin; Wei, Fengxia; Mhaisalkar, Subodh G.; Graetzel, Michael; White, Tim J.Journal of Materials Chemistry A: Materials for Energy and Sustainability (2013), 1 (18), 5628-5641CODEN: JMCAET; ISSN:2050-7496. (Royal Society of Chemistry)The hybrid org.-inorg. perovskite (CH3NH3)PbI3 may find application in next generation solid-state sensitized solar cells. Although this material and related perovskites were discovered many decades ago, questions remain concerning their diverse structural chem. and unusual properties. The article presents a review of previous work and provides a detailed description of the prepn., structural characterization and phys. characteristics of (CH3NH3)PbI3. The phase changes exhibited by (CH3NH3)PbI3 have been probed using variable temp. powder and single crystal x-ray diffraction, combined with differential scanning calorimetry, thermogravimetric anal. and phase contrast transmission electron microscopy. The optical band gap for (CH3NH3)PbI3 detd. by UV-visible spectroscopy was compared to values obtained from d.-of-state simulation of the electronic band structure.
- 20Stoumpos, C. C.; Frazer, L.; Clark, D. J.; Kim, Y. S.; Rhim, S. H.; Freeman, A. J.; Ketterson, J. B.; Jang, J. I.; Kanatzidis, M. G. Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical Properties J. Am. Chem. Soc. 2015, 137, 6804– 6819 DOI: 10.1021/jacs.5b01025Google Scholar20https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXotVSntr4%253D&md5=e24612098507e68ca1143b5e805adaa2Hybrid Germanium Iodide Perovskite Semiconductors: Active Lone Pairs, Structural Distortions, Direct and Indirect Energy Gaps, and Strong Nonlinear Optical PropertiesStoumpos, Constantinos C.; Frazer, Laszlo; Clark, Daniel J.; Kim, Yong Soo; Rhim, Sonny H.; Freeman, Arthur J.; Ketterson, John B.; Jang, Joon I.; Kanatzidis, Mercouri G.Journal of the American Chemical Society (2015), 137 (21), 6804-6819CODEN: JACSAT; ISSN:0002-7863. (American Chemical Society)The synthesis and properties of the hybrid org./inorg. Ge perovskite compds., AGeI3, are reported (A = Cs, org. cation). The systematic study of this reaction system gave 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compd., methylammonium, MeNH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, Me3NHGeI3 (6), and isopropylammonium, Me2C(H)NH3GeI3 (7) analogs were prepd. The crystal structures of the compds. are classified based on their dimensionality with 1-4 forming 3D perovskite frameworks and 5-7 1D infinite chains. Compds. 1-7, with the exception of compds. 5 (centrosym.) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compds. have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compds. have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). The 2nd harmonic generation (SHG) properties are reported of the compds., which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm2). The 2nd-order nonlinear susceptibility, χ(2)S, is 125.3 ± 10.5 pm/V (1), (161.0 ± 14.5) pm/V (2), 143.0 ± 13.5 pm/V (3), and 57.2 ± 5.5 pm/V (4). First-principles d. functional theory electronic structure calcns. indicate that the large SHG response is attributed to the high d. of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation. Crystallog. data are given.
- 21Clark, S. J.; Donaldson, J. D.; Harvey, J. A. Evidence for the Direct Population of Solid-State Bands by Non-Bonding Electron Pairs in Compounds of the Type CsMX3(M= Ge, Sn, Pb; X = Cl, Br, I) J. Mater. Chem. 1995, 5, 1813– 1818 DOI: 10.1039/jm9950501813Google ScholarThere is no corresponding record for this reference.
- 22Aharon, S.; Cohen, B. E.; Etgar, L. Hybrid Lead Halide Iodide and Lead Halide Bromide in Efficient Hole Conductor Free Perovskite Solar Cell J. Phys. Chem. C 2014, 118, 17160– 17165 DOI: 10.1021/jp5023407Google Scholar22https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXmtlSgtbo%253D&md5=3316d8c67b945ce90dee962ba1bfe2beHybrid Lead Halide Iodide and Lead Halide Bromide in Efficient Hole Conductor Free Perovskite Solar CellAharon, Sigalit; Cohen, Bat El; Etgar, LiozJournal of Physical Chemistry C (2014), 118 (30), 17160-17165CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)In this work we used CH3NH3PbInBr3-n (where 0 ≤ n ≤ 3) as hole conductor and light harvester is used in the solar cell. Various concns. of methylammonium iodide and methylammonium bromide were studied which reveal that any compn. of the hybrid CH3NH3PbInBr3-n can conduct holes. The hybrid perovskite was deposited in two steps, sepg. it to two precursors to allow better control of the perovskite compn. and efficient tuning of its band gap. The X-ray diffraction reveals the change in the lattice parameter due to the introduction of the Br- ions. The hybrid iodide/bromide perovskite hole conductor free solar cells show very good stability, their power conversion efficiency achieved 8.54% under 1 sun illumination with c.d. of 16.2 mA/cm2. The results of this work open the possibility for graded structure of perovskite solar cells without the need for hole conductor.
- 23Noh, J. H.; Im, S. H.; Heo, J. H.; Mandal, T. N.; Seok, S. I. Chemical Management for Colorful, Efficient, and Stable Inorganic–Organic Hybrid Nanostructured Solar Cells Nano Lett. 2013, 13, 1764– 1769 DOI: 10.1021/nl400349bGoogle Scholar23https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXksVyit7w%253D&md5=6279f57e41e3bc9eb469af9b0baa3149Chemical Management for Colorful, Efficient, and Stable Inorganic-Organic Hybrid Nanostructured Solar CellsNoh, Jun Hong; Im, Sang Hyuk; Heo, Jin Hyuck; Mandal, Tarak N.; Seok, Sang IlNano Letters (2013), 13 (4), 1764-1769CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)Chem. tuned inorg.-org. hybrid materials, based on MeNH3(=MA)Pb(I1-xBrx)3 perovskites, have been studied using UV-visible absorption and x-ray diffraction patterns and applied to nanostructured solar cells. The band gap engineering brought about by the chem. management of MAPb(I1-xBrx)3 perovskites can be controllably tuned to cover almost the entire visible spectrum, enabling the realization of colorful solar cells. The authors demonstrate highly efficient solar cells exhibiting 12.3% in a power conversion efficiency of under std. AM 1.5, for the most efficient device, as a result of tunable compn. for the light harvester in conjunction with a mesoporous TiO2 film and a hole conducting polymer. Probably the works highlighted in this paper represent one step toward the realization of low-cost, high-efficiency, and long-term stability with colorful solar cells.
- 24Kitazawa, N.; Watanabe, Y.; Nakamura, Y. Optical Properties of CH3NH3PbX3 (X = Halogen) and their Mixed-Halide Crystals J. Mater. Sci. 2002, 37, 3585– 3587 DOI: 10.1023/A:1016584519829Google Scholar24https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XlsFKnt7s%253D&md5=7b58cdad8c496308359e5ea44c881eb5Optical properties of CH3NH3PbX3 (X = halogen) and their mixed-halide crystalsKitazawa, N.; Watanabe, Y.; Nakamura, Y.Journal of Materials Science (2002), 37 (17), 3585-3587CODEN: JMTSAS; ISSN:0022-2461. (Kluwer Academic Publishers)Thin films of microcryst. CH3NH3PbX3 (X = halogen) as well as their mixed-halide crystals were fabricated by the spin-coating technique, and their optical properties were investigated. X-ray diffraction investigation revealed that CH3NH3PbBr3-xClx (x = 0-3) were successfully formed on glass substrate self-assembly and oriented with the a-axis. Owing to due to their large exciton binding energy, these materials showed clear exciton absorption and free-exciton emission in the visible region at room temp. Replacing Br with Cl made it possible to control the band structure of these materials. As a result, the peak position of the exciton band shifted continuously towards blue region with increasing the Cl content in the films.
- 25Protesescu, L.; Yakunin, S.; Bodnarchuk, M. I.; Krieg, F.; Caputo, R.; Hendon, C. H.; Yang, R. X.; Walsh, A.; Kovalenko, M. V. Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut Nano Lett. 2015, 15, 3692– 3696 DOI: 10.1021/nl5048779Google Scholar25https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhvVOjt74%253D&md5=9285d37903f27d4b4b602c17ddbdce03Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color GamutProtesescu, Loredana; Yakunin, Sergii; Bodnarchuk, Maryna I.; Krieg, Franziska; Caputo, Riccarda; Hendon, Christopher H.; Yang, Ruo Xi; Walsh, Aron; Kovalenko, Maksym V.Nano Letters (2015), 15 (6), 3692-3696CODEN: NALEFD; ISSN:1530-6984. (American Chemical Society)Metal halides perovskites, such as hybrid org.-inorg. MeNH3PbI3, are newcomer optoelectronic materials that have attracted enormous attention as soln.-deposited absorbing layers in solar cells with power conversion efficiencies reaching 20%. A new avenue for halide perovskites was demonstrated by designing highly luminescent perovskite-based colloidal quantum dot materials. Monodisperse colloidal nanocubes (4-15 nm edge lengths) of fully inorg. perovskites (CsPbX3, X = Cl, Br, and I or mixed halide systems Cl/Br and Br/I) were synthesized using inexpensive com. precursors. Through compositional modulations and quantum size-effects, the bandgap energies and emission spectra are readily tunable over the entire visible spectral region of 410-700 nm. The luminescence of CsPbX3 nanocrystals is characterized by narrow emission line-widths of 12-42 nm, wide color gamut covering up to 140% of the NTSC color std., high quantum yields of ≤90%, and radiative lifetimes at 1-29 ns. The compelling combination of enhanced optical properties and chem. robustness makes CsPbX3 nanocrystals appealing for optoelectronic applications, particularly for blue and green spectral regions (410-530 nm), where typical metal chalcogenide-based quantum dots suffer from photodegrdn.
- 26Wei, F.; Deng, Z.; Sun, S.; Xie, F.; Kieslich, G.; Evans, D. M.; Carpenter, M. A.; Bristowe, P. D.; Cheetham, A. K. The Synthesis, Structure and Electronic Properties of a Lead-Free Hybrid Inorganic-Organic Double Perovskite (MA)2KBiCl6 (MA = Methylammonium) Mater. Horiz. 2016, 3, 328– 332 DOI: 10.1039/C6MH00053CGoogle Scholar26https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28Xms1Kls70%253D&md5=be5cf12edb715a8ce626a325a3a5c8bdThe synthesis, structure and electronic properties of a lead-free hybrid inorganic-organic double perovskite (MA)2KBiCl6 (MA = methylammonium)Wei, Fengxia; Deng, Zeyu; Sun, Shijing; Xie, Fei; Kieslich, Gregor; Evans, Donald M.; Carpenter, Michael A.; Bristowe, Paul D.; Cheetham, Anthony K.Materials Horizons (2016), 3 (4), 328-332CODEN: MHAOBM; ISSN:2051-6355. (Royal Society of Chemistry)In a search for lead-free materials that could be used as alternatives to the hybrid perovskites, (MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows strong similarities to the lead analogs. Spectroscopic measurements and nanoindentation studies are combined with d. functional calcns. to reveal the properties of this interesting system.
- 27Hoye, R. L. Z.; Brandt, R. E.; Osherov, A.; Stevanović, V.; Stranks, S. D.; Wilson, M. W. B.; Kim, H.; Akey, A. J.; Perkins, J. D.; Kurchin, R. C.; Poindexter, J. R.; Wang, E. N.; Bawendi, M. G.; Bulović, V.; Buonassisi, T. Methylammonium Bismuth Iodide as a Lead-Free, Stable Hybrid Organic–Inorganic Solar Absorber Chem. - Eur. J. 2016, 22, 2605– 2610 DOI: 10.1002/chem.201505055Google Scholar27https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtFOnsrY%253D&md5=419363f3fc4fe5c98466af8b3a217c5cMethylammonium Bismuth Iodide as a Lead-Free, Stable Hybrid Organic-Inorganic Solar AbsorberHoye, Robert L. Z.; Brandt, Riley E.; Osherov, Anna; Stevanovic, Vladan; Stranks, Samuel D.; Wilson, Mark W. B.; Kim, Hyunho; Akey, Austin J.; Perkins, John D.; Kurchin, Rachel C.; Poindexter, Jeremy R.; Wang, Evelyn N.; Bawendi, Moungi G.; Bulovic, Vladimir; Buonassisi, TonioChemistry - A European Journal (2016), 22 (8), 2605-2610CODEN: CEUJED; ISSN:0947-6539. (Wiley-VCH Verlag GmbH & Co. KGaA)Methylammonium lead halide (MAPbX3) perovskites exhibit exceptional carrier transport properties. But their com. deployment as solar absorbers is currently limited by their intrinsic instability in the presence of humidity and their lead content. Guided by our theor. predictions, we explored the potential of methylammonium bismuth iodide (MBI) as a solar absorber through detailed materials characterization. We synthesized phase-pure MBI by soln. and vapor processing. In contrast to MAPbX3, MBI is air stable, forming a surface layer that does not increase the recombination rate. We found that MBI luminesces at room temp., with the vapor-processed films exhibiting superior photoluminescence (PL) decay times that are promising for photovoltaic applications. The thermodn., electronic, and structural features of MBI that are amenable to these properties are also present in other hybrid ternary bismuth halide compds. Through MBI, we demonstrate a lead-free and stable alternative to MAPbX3 that has a similar electronic structure and nanosecond lifetimes.
- 28Sun, S.; Tominaka, S.; Lee, J.-H.; Xie, F.; Bristowe, P. D.; Cheetham, A. K. Synthesis, Crystal Structure, and Properties of a Perovskite-Related Bismuth Phase, (NH4)3Bi2I9 APL Mater. 2016, 4, 031101 DOI: 10.1063/1.4943680Google Scholar28https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XktlChs70%253D&md5=88e8dae6b061215c891d0550f5588f00Synthesis, crystal structure, and properties of a perovskite-related bismuth phase, (NH4)3Bi2I9Sun, Shijing; Tominaka, Satoshi; Lee, Jung-Hoon; Xie, Fei; Bristowe, Paul D.; Cheetham, Anthony K.APL Materials (2016), 4 (3), 031101/1-031101/7CODEN: AMPADS; ISSN:2166-532X. (American Institute of Physics)Org.-inorg. halide perovskites, esp. methylammonium lead halide, have recently led to remarkable advances in photovoltaic devices. However, due to environmental and stability concerns around the use of lead, research into lead-free perovskite structures has been attracting increasing attention. In this study, a layered perovskite-like architecture, (NH4)3Bi2I9, is prepd. from soln. and the structure solved by single crystal X-ray diffraction. The band gap, which is estd. to be 2.04 eV using UV-visible spectroscopy, is lower than that of CH3NH3PbBr3. The energy-minimized structure obtained from first principles calcns. is in excellent agreement with the X-ray results and establishes the locations of the hydrogen atoms. The calcns. also point to a significant lone pair effect on the bismuth ion. Single crystal and powder cond. measurements are performed to examine the potential application of (NH4)3Bi2I9 as an alternative to the lead contg. perovskites. (c) 2016 American Institute of Physics.
- 29Lehner, A. J.; Fabini, D. H.; Evans, H. A.; Hébert, C.-A.; Smock, S. R.; Hu, J.; Wang, H.; Zwanziger, J. W.; Chabinyc, M. L.; Seshadri, R. Crystal and Electronic Structures of Complex Bismuth Iodides A3Bi2I9 (A = K, Rb, Cs) Related to Perovskite: Aiding the Rational Design of Photovoltaics Chem. Mater. 2015, 27, 7137– 7148 DOI: 10.1021/acs.chemmater.5b03147Google Scholar29https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhs1CqsbbJ&md5=bd495797b4a2fc36821095c0614ef3b8Crystal and Electronic Structures of Complex Bismuth Iodides A3Bi2I9 (A = K, Rb, Cs) Related to Perovskite: Aiding the Rational Design of PhotovoltaicsLehner, Anna J.; Fabini, Douglas H.; Evans, Hayden A.; Hebert, Claire-Alice; Smock, Sara R.; Hu, Jerry; Wang, Hengbin; Zwanziger, Josef W.; Chabinyc, Michael L.; Seshadri, RamChemistry of Materials (2015), 27 (20), 7137-7148CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)Ternary bismuth halides form an interesting functional materials class in the context of the closely related Pb halide perovskite photovoltaics, esp. given the significantly reduced toxicity of Bi when compared with Pb. The compds. A3Bi2I9 (A = K, Rb, Cs) examd. here crystallize in two different structure types: the layered defect-perovskite K3Bi2I9 type, and the Cs3Cr2Cl9 type. The latter structure type features isolated Bi2I93- anions. Here, the crystal structures of the ternary iodides are redetd. and a cor. structural model for Rb3Bi2I9, as established by single crystal x-ray diffraction and solid state 87Rb NMR spectroscopy and supported by d. functional theory (DFT) calcns. is presented. A variety of facile prepn. techniques for single crystals, bulk materials, as well as soln.-processed thin films are described. The optical properties and electronic structures were studied exptl. by optical absorption and UPS and computationally by DFT calcns. Abs. band positions of the valence and conduction bands of these semiconductors, with excellent agreement of exptl. and calcd. values, are reported, constituting a useful input for the rational interface design of efficient electronic and optoelectronic devices. The different structural connectivity in the two different structure types, somewhat surprisingly, appears to not impact band positions or band gaps in a significant manner. Computed dielec. properties, including the finding of anomalously large Born effective charge tensors on Bi3+, suggest proximal structural instabilities arising from the Bi3+ 6s2 lone pair. These anomalous Born effective charges are promising for defect screening and effective charge carrier transport. The structural, electronic, and optical properties of the complex bismuth iodides are to some extent similar to the related lead iodide perovskites. The deeper valence band positions in the complex bismuth iodides point to the need for different choices of hole transport materials for Bi-iodide based solar cell architectures.
- 30McClure, E. T.; Ball, M. R.; Windl, W.; Woodward, P. M. Cs2AgBiX6 (X = Br, Cl): New Visible Light Absorbing, Lead-Free Halide Perovskite Semiconductors Chem. Mater. 2016, 28, 1348– 1354 DOI: 10.1021/acs.chemmater.5b04231Google Scholar30https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28Xitleqtb8%253D&md5=5863054486fde8f7011cda716e381d66Cs2AgBiX6 (X = Br, Cl): New Visible Light Absorbing, Lead-Free Halide Perovskite SemiconductorsMcClure, Eric T.; Ball, Molly R.; Windl, Wolfgang; Woodward, Patrick M.Chemistry of Materials (2016), 28 (5), 1348-1354CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)The double perovskites Cs2AgBiBr6 and Cs2AgBiCl6 have been synthesized from both solid state and soln. routes. X-ray diffraction measurements show that both compds. adopt the cubic double perovskite structure, space group Fm‾3m, with lattice parameters of 11.2711(1) Å (X = Br) and 10.7774(2) Å (X = Cl). Diffuse reflectance measurements reveal band gaps of 2.19 eV (X = Br) and 2.77 eV (X = Cl) that are slightly smaller than the band gaps of the analogous lead halide perovskites, 2.26 eV for CH3NH3PbBr3 and 3.00 eV for CH3NH3PbCl3. Band structure calcns. indicate that the interaction between the Ag 4d-orbitals and the 3p/4p-orbitals of the halide ion modifies the valence band leading to an indirect band gap. Both compds. are stable when exposed to air, but Cs2AgBiBr6 degrades over a period of weeks when exposed to both ambient air and light. These results show that halide double perovskite semiconductors are potentially an environmentally friendly alternative to the lead halide perovskite semiconductors.
- 31Lehner, A. J.; Wang, H.; Fabini, D. H.; Liman, C. D.; Hébert, C.-A.; Perry, E. E.; Wang, M.; Bazan, G. C.; Chabinyc, M. L.; Seshadri, R. Electronic Structure and Photovoltaic Application of BiI3 Appl. Phys. Lett. 2015, 107, 131109 DOI: 10.1063/1.4932129Google Scholar31https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhsFOrsLzO&md5=694fc03fe8c04f033b3bd081b5853a0cElectronic structure and photovoltaic application of BiI3Lehner, Anna J.; Wang, Hengbin; Fabini, Douglas H.; Liman, Christopher D.; Hebert, Claire-Alice; Perry, Erin E.; Wang, Ming; Bazan, Guillermo C.; Chabinyc, Michael L.; Seshadri, RamApplied Physics Letters (2015), 107 (13), 131109/1-131109/4CODEN: APPLAB; ISSN:0003-6951. (American Institute of Physics)Rapid recent improvement in photovoltaic efficiency in hybrid lead halide perovskite materials provided the impetus for understanding other, related main-group halide systems. Here, the closely related but less toxic BiI3 can show promising optoelectronic properties. Layered binary BiI3 is used here as the active layer in planar solar cell architectures (efficiency ∼0.3%). Exptl. and computational studies of abs. band positions of BiI3 are also presented, to help in the rational design of device architectures that would allow efficient charge transfer at the interfaces. (c) 2015 American Institute of Physics.
- 32Brandt, R. E.; Kurchin, R. C.; Hoye, R. L. Z.; Poindexter, J. R.; Wilson, M. W. B.; Sulekar, S.; Lenahan, F.; Yen, P. X. T.; Stevanović, V.; Nino, J. C.; Bawendi, M. G.; Buonassisi, T. Investigation of Bismuth Triiodide (BiI3) for Photovoltaic Applications J. Phys. Chem. Lett. 2015, 6, 4297– 4302 DOI: 10.1021/acs.jpclett.5b02022Google Scholar32https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhs1ChsL3E&md5=af07e453a1e90e6c8c6ad518bfe22efaInvestigation of Bismuth Triiodide (BiI3) for Photovoltaic ApplicationsBrandt, Riley E.; Kurchin, Rachel C.; Hoye, Robert L. Z.; Poindexter, Jeremy R.; Wilson, Mark W. B.; Sulekar, Soumitra; Lenahan, Frances; Yen, Patricia X. T.; Stevanovic, Vladan; Nino, Juan C.; Bawendi, Moungi G.; Buonassisi, TonioJournal of Physical Chemistry Letters (2015), 6 (21), 4297-4302CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)Guided by predictive discovery framework, the authors study bismuth triiodide (BiI3) as a candidate thin-film photovoltaic (PV) absorber. BiI3 was chosen for its optical properties and the potential for defect-tolerant charge transport properties, which the authors test exptl. by measuring optical absorption and recombination lifetimes. The authors synthesize phase-pure BiI3 thin films by phys. vapor transport and soln. processing and single-crystals by an electrodynamic gradient vertical Bridgman method. The bandgap of these materials is ∼1.8 eV, and they demonstrate room-temp. band-edge photoluminescence. The authors measure monoexponential recombination lifetimes at 180-240 ps for thin films, and longer, multiexponential dynamics for single crystals, with time consts. up to 1.3 to 1.5 ns. The outstanding challenges to developing BiI3 PVs, including mech. and elec. properties, which can also inform future selection of candidate PV absorbers are discussed.
- 33Podraza, N. J.; Qiu, W.; Hinojosa, B. B.; Xu, H.; Motyka, M. A.; Phillpot, S. R.; Baciak, J. E.; Trolier-McKinstry, S.; Nino, J. C. Band Gap and Structure of Single Crystal BiI3: Resolving Discrepancies in Literature J. Appl. Phys. 2013, 114, 033110 DOI: 10.1063/1.4813486Google Scholar33https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXhtFCjurjF&md5=775ec1681c8864a8d4ba90085858fce5Band gap and structure of single crystal BiI3: Resolving discrepancies in literaturePodraza, Nikolas J.; Qiu, Wei; Hinojosa, Beverly B.; Xu, Haixuan; Motyka, Michael A.; Phillpot, Simon R.; Baciak, James E.; Trolier-McKinstry, Susan; Nino, Juan C.Journal of Applied Physics (Melville, NY, United States) (2013), 114 (3), 033110/1-033110/8CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)Bismuth tri-iodide (BiI3) is an intermediate band gap semiconductor with potential for room temp. gamma-ray detection applications. Remarkably, very different band gap characteristics and values of BiI3 have been reported in literature, which may be attributed to its complicated layered structure with strongly bound BiI6 octahedra held together by weak van der Waals interactions. Here, to resolve this discrepancy, the band gap of BiI3 was characterized through optical and computational methods and differences among previously reported values are discussed. Unpolarized transmittance and reflectance spectra in the visible to near UV (UV-Vis) range at room temp. yielded an indirect band gap of 1.67 ± 0.09 eV, while spectroscopic ellipsometry detected a direct band gap at 1.96 ± 0.05 eV and higher energy crit. point features. The discrepancy between the UV-Vis and ellipsometry results originates from the low optical absorption coeffs. (α ∼ 102 cm-1) of BiI3 that renders reflection-based ellipsometry insensitive to the indirect gap for this material. Further, electronic-structure calcns. of the band structure by d. functional theory methods are also consistent with the presence of an indirect band gap of 1.55 eV in BiI3. Based on this, an indirect band gap with a value of 1.67 ± 0.09 eV is considered to best represent the band gap structure and value for single crystal BiI3. (c) 2013 American Institute of Physics.
- 34Kim, Y.; Yang, Z.; Jain, A.; Voznyy, O.; Kim, G.-H.; Liu, M.; Quan, L. N.; García de Arquer, F. P.; Comin, R.; Fan, J. Z.; Sargent, E. H. Pure Cubic-Phase Hybrid Iodobismuthates AgBi2I7 for Thin-Film Photovoltaics Angew. Chem., Int. Ed. 2016, 55, 9586– 9590 DOI: 10.1002/anie.201603608Google Scholar34https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhtV2itLbL&md5=736dd3a819f56732fdf50df8c23ef3b0Pure Cubic-Phase Hybrid Iodobismuthates AgBi2I7 for Thin-Film PhotovoltaicsKim, Younghoon; Yang, Zhenyu; Jain, Ankit; Voznyy, Oleksandr; Kim, Gi-Hwan; Liu, Min; Quan, Li Na; Garcia de Arquer, F. Pelayo; Comin, Riccardo; Fan, James Z.; Sargent, Edward H.Angewandte Chemie, International Edition (2016), 55 (33), 9586-9590CODEN: ACIEF5; ISSN:1433-7851. (Wiley-VCH Verlag GmbH & Co. KGaA)Bismuth-based hybrid perovskites are candidates for lead-free and air-stable photovoltaics, but poor surface morphologies and a high band-gap energy have previously limited these hybrid perovskites. A new materials processing strategy to produce enhanced bismuth-based thin-film photovoltaic absorbers by incorporation of monovalent silver cations into iodobismuthates is presented. Soln.-processed AgBi2I7 thin films are prepd. by spin-coating silver and bismuth precursors dissolved in n-butylamine and annealing under an N2 atmosphere. X-ray diffraction anal. reveals the pure cubic structure (Fd3m) with lattice parameters of a=b=c=12.223 Å. The resultant AgBi2I7 thin films exhibit dense and pinhole-free surface morphologies with grains ranging in size from 200-800 nm and a low band gap of 1.87 eV suitable for photovoltaic applications. Initial studies produce solar power conversion efficiencies of 1.22 % and excellent stability over at least 10 days under ambient conditions.
- 35Xiao, Z.; Meng, W.; Mitzi, D. B.; Yan, Y. Crystal Structure of AgBi2I7 Thin Films J. Phys. Chem. Lett. 2016, 7, 3903– 3907 DOI: 10.1021/acs.jpclett.6b01834Google Scholar35https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XhsFWqsbvF&md5=3b9803db5e3c0faf00f59ffc63ab625dCrystal Structure of AgBi2I7 Thin FilmsXiao, Zewen; Meng, Weiwei; Mitzi, David B.; Yan, YanfaJournal of Physical Chemistry Letters (2016), 7 (19), 3903-3907CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)Synthesis of cubic-phase AgBi2I7 iodobismuthate films and fabrication of air-stable Pb-free solar cells using the AgBi2I7 absorber have recently been reported. From XRD anal. and nominal compn., probably the synthesized films have a cubic ThZr2H7 crystal structure with AgBi2I7 stoichiometry. Through careful examn. of the proposed structure and computational evaluation of the phase stability and bandgap, the reported AgBi2I7 films cannot be forming with the ThZr2H7-type structure, but rather more likely adopt an Ag-deficient AgBiI4 type. Both the exptl. x-ray diffraction pattern and bandgap can be better explained by the AgBiI4 structure. The proposed AgBiI4 structure, with octahedral Bi coordination, removes unphys. short Bi-I bonding within the [BiI8] hexahedra of the ThZr2I7 model. The results provide crit. insights for assessing the photovoltaic properties of AgBi2I7 iodobismuthate materials.
- 36Oldag, T.; Aussieker, T.; Keller, H.-L.; Preitschaft, C.; Pfitzner, A. Solvothermale Synthese und Bestimmung der Kristallstrukturen von AgBiI4 und Ag3BiI6 Z. Anorg. Allg. Chem. 2005, 631, 677– 682 DOI: 10.1002/zaac.200400508Google Scholar36https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2MXit1Sgsrg%253D&md5=86d8047e764e92b569a14cdd1775f9d6Solvothermal synthesis and crystal structure determination of AgBiI4 and Ag3BiI6Oldag, Thorsten; Aussieker, Thomas; Keller, Hans-Lothar; Preitschaft, Christian; Pfitzner, ArnoZeitschrift fuer Anorganische und Allgemeine Chemie (2005), 631 (4), 677-682CODEN: ZAACAB; ISSN:0044-2313. (Wiley-VCH Verlag GmbH & Co. KGaA)AgBiI4 and Ag3BiI6 were synthesized by solvothermal reaction from AgI and BiI3 in dild. HI-soln. (20%) at a temp. of 160°. The grayish-black crystals grow as octahedra (Ag-BiI4) or hexagonal/trigonal platelets (Ag3BiI6). AgBiI4 crystallizes in space group Fd‾3m with a = 1222.3(1) pm (300 K), Z = 8, R1 = 0.0151, wR2 = 0.0226, whereas Ag3BiI6 shows the space group R‾3m with a = 435.37(6) pm, c = 2081.0(4) pm (300 K), Z = 1, 154 independent reflections, 8 refined parameters, R1 = 0.0220, wR2 = 0.0573. Both crystal structures show stacking sequence abcabc... of hexagonal layers contg. I. Bi and Ag are sharing octahedral sites with different mass ratio in both structures. The part of Ag which could be localized varies with temp. This behavior indicates mobility of Ag within the crystal structure. The ionic cond. of AgBiI4 is explored. AgBiI4 and Ag3BiI6 show close structural relationship, with AgBiI4 as a variant with a higher degree of order.
- 37Fourcroy, P. H.; Palazzi, M.; Rivet, J.; Flahaut, J.; Céolin, R. Etude du Systeme AgIBiI3 Mater. Res. Bull. 1979, 14, 325– 328 DOI: 10.1016/0025-5408(79)90096-5Google Scholar37https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaE1MXhslGnsb0%253D&md5=cb593f032b7e15501bc77bb97b402f67Study of the silver iodide-bismuth(III) iodide systemFourcroy, P. H.; Palazzi, M.; Rivet, J.; Flahaut, J.; Ceolin, R.Materials Research Bulletin (1979), 14 (3), 325-8CODEN: MRBUAC; ISSN:0025-5408.The pseudo-binary system AgI-BiI3 was studied by DTA and by microcalorimetry. An eutectic point was found at 389° at the compn. 85 mol. % BiI3. Two new phases Ag2BiI5 and AgBi2I7 were identified, and their existence confirmed by x-ray diffraction. Ag2BiI5 is rhombohedral, with hexagonal a 4.34 and c 20.77 Å. AgBi2I7 is cubic with a 3.05 Å.
- 38Dzeranova, K. B.; Kaloev, N. I.; Bukhalova, G. A. The BiI3 - AgI System Russ. J. Inorg. Chem. 1985, 30, 1700– 1701Google ScholarThere is no corresponding record for this reference.
- 39Mashadieva, L. F.; Aliev, Z. S.; Shevelkov, A. V.; Babanly, M. B. Experimental Investigation of the Ag–Bi–I Ternary System and Thermodynamic Properties of the Ternary Phases J. Alloys Compd. 2013, 551, 512– 520 DOI: 10.1016/j.jallcom.2012.11.033Google Scholar39https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3sXntFOksA%253D%253D&md5=ba71d0b553101e5f94286517d6fda296Experimental investigation of the Ag-Bi-I ternary system and thermodynamic properties of the ternary phasesMashadieva, Leyla F.; Aliev, Ziya S.; Shevelkov, Andrei V.; Babanly, Mahammad B.Journal of Alloys and Compounds (2013), 551 (), 512-520CODEN: JALCEU; ISSN:0925-8388. (Elsevier B.V.)The phase equil. in the Ag-Bi-I ternary system and thermodn. properties of the ternary phases were exptl. detd. by using DTA and x-ray diffraction techniques and EMF measurements with the Ag4RbI5 solid electrolyte. According to the obtained exptl. results, the polythermal sections of the ternary phase diagram, its isothermal section at 300 K as well as the projection of the liqs. surface were revised. The fields of the primary crystn. and types and coordinates of non-variant and mono-variant equil. were detd. The partial molar functions of silver iodide and silver in the alloys as well as the std. thermodn. functions of formation and the std. entropies of Ag2BiI5 and AgBi2I7 were calcd. based on EMF measurements.
- 40Degen, T.; Sadki, M.; Bron, E.; König, U.; Nénert, G. The HighScore Suite Powder Diffr. 2014, 29, S13– S18 DOI: 10.1017/S0885715614000840Google Scholar40https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXitFWiu7bL&md5=b9b94fe92322ae53c50b4094dc4d5d89The HighScore suiteDegen, Thomas; Sadki, Mustapha; Bron, Egbert; Koenig, Uwe; Nenert, GwilhermPowder Diffraction (2014), 29 (S2), S13-S18CODEN: PODIE2; ISSN:0885-7156. (Cambridge University Press)HighScore with the Plus option (HighScore Plus) is the com. powder diffraction anal. software from PAnal. It has been in const. development over the last 13 years and has evolved into a very complete and mature product. In this paper, we present a brief overview of the suite focusing on the latest addns. and its user-friendliness. The introduction briefly touches some basic ideas behind HighScore and the Plus option.
- 41TOPAS, version 5; Bruker AXS: Karlsruhe, Germany, 2011.Google ScholarThere is no corresponding record for this reference.
- 42Momma, K.; Izumi, F. VESTA: a Three-Dimensional Visualization System for Electronic and Structural Analysis J. Appl. Crystallogr. 2008, 41, 653– 658 DOI: 10.1107/S0021889808012016Google Scholar42https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1cXlvFKgu78%253D&md5=0e9d075bd3ff51aa0f34e09a2ddb1f04VESTA: a three-dimensional visualization system for electronic and structural analysisMomma, Koichi; Izumi, FujioJournal of Applied Crystallography (2008), 41 (3), 653-658CODEN: JACGAR; ISSN:0021-8898. (International Union of Crystallography)A cross-platform program, VESTA, has been developed to visualize both structural and volumetric data in multiple windows with tabs. VESTA represents crystal structures by ball-and-stick, space-filling, polyhedral, wire frame, stick, dot-surface and thermal-ellipsoid models. A variety of crystal-chem. information is extractable from fractional coordinates, occupancies and oxidn. states of sites. Volumetric data such as electron and nuclear densities, Patterson functions, and wavefunctions are displayed as isosurfaces, bird's-eye views and two-dimensional maps. Isosurfaces can be colored according to other phys. quantities. Translucent isosurfaces and/or slices can be overlapped with a structural model. Collaboration with external programs enables the user to locate bonds and bond angles in the 'graphics area', simulate powder diffraction patterns, and calc. site potentials and Madelung energies. Electron densities detd. exptl. are convertible into their Laplacians and electronic energy densities.
- 43CrysAlisPro, version 171.38.48; Agilent Technologies: Yarton, Oxfordshire, U.K., 2013.Google ScholarThere is no corresponding record for this reference.
- 44Sheldrick, G. A Short History of SHELX Acta Crystallogr., Sect. A: Found. Crystallogr. 2008, 64, 112– 122 DOI: 10.1107/S0108767307043930Google Scholar44https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhsVGhurzO&md5=8f91f10be4a9df74b2a9dad522c71e6eA short history of SHELXSheldrick, George M.Acta Crystallographica, Section A: Foundations of Crystallography (2008), 64 (1), 112-122CODEN: ACACEQ; ISSN:0108-7673. (International Union of Crystallography)An account is given of the development of the SHELX system of computer programs from SHELX-76 to the present day. In addn. to identifying useful innovations that have come into general use through their implementation in SHELX, a crit. anal. is presented of the less-successful features, missed opportunities and desirable improvements for future releases of the software. An attempt is made to understand how a program originally designed for photog. intensity data, punched cards and computers over 10000 times slower than an av. modern personal computer has managed to survive for so long. SHELXL is the most widely used program for small-mol. refinement and SHELXS and SHELXD are often employed for structure soln. despite the availability of objectively superior programs. SHELXL also finds a niche for the refinement of macromols. against high-resoln. or twinned data; SHELXPRO acts as an interface for macromol. applications. SHELXC, SHELXD and SHELXE are proving useful for the exptl. phasing of macromols., esp. because they are fast and robust and so are often employed in pipelines for high-throughput phasing. This paper could serve as a general literature citation when one or more of the open-source SHELX programs (and the Bruker AXS version SHELXTL) are employed in the course of a crystal-structure detn.
- 45Dolomanov, O. V.; Bourhis, L. J.; Gildea, R. J.; Howard, J. A. K.; Puschmann, H. OLEX2: a Complete Structure Solution, Refinement and Analysis Program J. Appl. Crystallogr. 2009, 42, 339– 341 DOI: 10.1107/S0021889808042726Google Scholar45https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD1MXjsFSnsbg%253D&md5=7a2f9697b13b8e76de0e7dc5074ab229OLEX2: a complete structure solution, refinement and analysis programDolomanov, Oleg V.; Bourhis, Luc J.; Gildea, Richard J.; Howard, Judith A. K.; Puschmann, HorstJournal of Applied Crystallography (2009), 42 (2), 339-341CODEN: JACGAR; ISSN:0021-8898. (International Union of Crystallography)New software, OLEX2, was developed for the detn., visualization and anal. of mol. crystal structures. The software has a portable mouse-driven workflow-oriented and fully comprehensive graphical user interface for structure soln., refinement and report generation, as well as novel tools for structure anal. OLEX2 seamlessly links all aspects of the structure soln., refinement and publication process and presents them in a single workflow-driven package, with the ultimate goal of producing an application which will be useful to both chemists and crystallographers.
- 46Whittles, T. J.; Burton, L. A.; Skelton, J. M.; Walsh, A.; Veal, T. D.; Dhanak, V. R. Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory Chem. Mater. 2016, 28, 3718– 3726 DOI: 10.1021/acs.chemmater.6b00397Google Scholar46https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC28XnsVWjtbk%253D&md5=5bb8191e00705a156651310943a6ab70Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and TheoryWhittles, Thomas J.; Burton, Lee A.; Skelton, Jonathan M.; Walsh, Aron; Veal, Tim D.; Dhanak, Vin R.Chemistry of Materials (2016), 28 (11), 3718-3726CODEN: CMATEX; ISSN:0897-4756. (American Chemical Society)Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic properties, and there is difficulty in identifying sep. phases, which are also known to form during Cu2ZnSnS4 depositions. The authors present x-ray photoemission spectroscopy (XPS) and inverse photoemission spectroscopy measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calcns. from d. functional theory (DFT). Differences in the XPS spectra of the three phases, including a large 0.9 eV shift between the 3d5/2 peak for SnS and SnS2, make this technique useful when identifying phase-pure or mixed-phase systems. Comparison of the valence band spectra from XPS and DFT reveals extra states at the top of the valence bands of SnS and Sn2S3, arising from the hybridization of lone pair electrons in Sn(II), which are not present for Sn(IV), as found in SnS2. This results in relatively low ionization potentials for SnS (4.71 eV) and Sn2S3 (4.66 eV), giving a more comprehensive explanation as to the origin of the poor efficiencies. The authors also demonstrate, by a band alignment, the large band offsets of SnS and Sn2S3 from other photovoltaic materials and highlight the detrimental effect on cell performance of secondary tin sulfide phase formation in SnS and CZTS films.
- 47Moulder, J. F.; Stickle, W. F.; Sobol, P. E.; Bomben, K. D.; Chastain, J.; King, R. C. Handbook of X-ray Photoelectron Spectroscopy; Physical Electronics, Inc.: Eden Prairie, MN, 1995.Google ScholarThere is no corresponding record for this reference.
- 48Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations using a Plane-Wave Basis Set Phys. Rev. B: Condens. Matter Mater. Phys. 1996, 54, 11169– 11186 DOI: 10.1103/PhysRevB.54.11169Google Scholar48https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28Xms1Whu7Y%253D&md5=9c8f6f298fe5ffe37c2589d3f970a697Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis setKresse, G.; Furthmueller, J.Physical Review B: Condensed Matter (1996), 54 (16), 11169-11186CODEN: PRBMDO; ISSN:0163-1829. (American Physical Society)The authors present an efficient scheme for calcg. the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set. In the first part the application of Pulay's DIIS method (direct inversion in the iterative subspace) to the iterative diagonalization of large matrixes will be discussed. This approach is stable, reliable, and minimizes the no. of order Natoms3 operations. In the second part, we will discuss an efficient mixing scheme also based on Pulay's scheme. A special "metric" and a special "preconditioning" optimized for a plane-wave basis set will be introduced. Scaling of the method will be discussed in detail for non-self-consistent and self-consistent calcns. It will be shown that the no. of iterations required to obtain a specific precision is almost independent of the system size. Altogether an order Natoms2 scaling is found for systems contg. up to 1000 electrons. If we take into account that the no. of k points can be decreased linearly with the system size, the overall scaling can approach Natoms. They have implemented these algorithms within a powerful package called VASP (Vienna ab initio simulation package). The program and the techniques have been used successfully for a large no. of different systems (liq. and amorphous semiconductors, liq. simple and transition metals, metallic and semiconducting surfaces, phonons in simple metals, transition metals, and semiconductors) and turned out to be very reliable.
- 49Kresse, G.; Joubert, D. From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 59, 1758– 1775 DOI: 10.1103/PhysRevB.59.1758Google Scholar49https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK1MXkt12nug%253D%253D&md5=78a73e92a93f995982fc481715729b14From ultrasoft pseudopotentials to the projector augmented-wave methodKresse, G.; Joubert, D.Physical Review B: Condensed Matter and Materials Physics (1999), 59 (3), 1758-1775CODEN: PRBMDO; ISSN:0163-1829. (American Physical Society)The formal relationship between ultrasoft (US) Vanderbilt-type pseudopotentials and Blochl's projector augmented wave (PAW) method is derived. The total energy functional for US pseudopotentials can be obtained by linearization of two terms in a slightly modified PAW total energy functional. The Hamilton operator, the forces, and the stress tensor are derived for this modified PAW functional. A simple way to implement the PAW method in existing plane-wave codes supporting US pseudopotentials is pointed out. In addn., crit. tests are presented to compare the accuracy and efficiency of the PAW and the US pseudopotential method with relaxed-core all-electron methods. These tests include small mols. (H2, H2O, Li2, N2, F2, BF3, SiF4) and several bulk systems (diamond, Si, V, Li, Ca, CaF2, Fe, Co, Ni). Particular attention is paid to the bulk properties and magnetic energies of Fe, Co, and Ni.
- 50Klimeš, J.; Bowler, D. R.; Michaelides, A. Van der Waals Density Functionals Applied to Solids Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 83, 195131 DOI: 10.1103/PhysRevB.83.195131Google Scholar50https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXotVOlsbY%253D&md5=0e3350e5db3aa6fee4eadea9c6582255Van der Waals density functionals applied to solidsKlimes, Jiri; Bowler, David R.; Michaelides, AngelosPhysical Review B: Condensed Matter and Materials Physics (2011), 83 (19), 195131/1-195131/13CODEN: PRBMDO; ISSN:1098-0121. (American Physical Society)The van der Waals d. functional (vdW-DF) of M. Dion et al. [Phys. Rev. Lett. 92, 246401 (2004)] is a promising approach for including dispersion in approx. d. functional theory exchange-correlation functionals. Indeed, an improved description of systems held by dispersion forces has been demonstrated in the literature. However, despite many applications, std. general tests on a broad range of materials including traditional "hard" matter such as metals, ionic compds., and insulators are lacking. Such tests are important not least because many of the applications of the vdW-DF method focus on the adsorption of atoms and mols. on the surfaces of solids. Here we calc. the lattice consts., bulk moduli, and atomization energies for a range of solids using the original vdW-DF and several of its offspring. We find that the original vdW-DF overestimates lattice consts. in a similar manner to how it overestimates binding distances for gas-phase dimers. However, some of the modified vdW functionals lead to av. errors which are similar to those of PBE or better. Likewise, atomization energies that are slightly better than from PBE are obtained from the modified vdW-DFs. Although the tests reported here are for hard solids, not normally materials for which dispersion forces are thought to be important, we find a systematic improvement in cohesive properties for the alkali metals and alkali halides when nonlocal correlations are accounted for.
- 51Trotter, J.; Zobel, T. The Crystal Structure of Sbl3 and Bil3 Z. Kristallogr. 1966, 123, 67Google Scholar51https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaF28XktFKkt70%253D&md5=5548c851883a9d05fe069d3ee5101857The crystal structure of SbI3 and BiI3Trotter, J.; Zobel, T.Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (1966), 123 (1), 67-72CODEN: ZKKKAJ; ISSN:0044-2968.Crystals of antimony triiodide, SbI3, are rhombohedral, with aH 7.48, cH 20.90 A., Z = 6, and space group R‾3. The structure was detd. from Patterson, Fourier and difference projections, by using F(h0.l) data, the final discrepancy factor being 0.131. The Sb atoms are significantly displaced from the centers of I octahedra, and have 3 near-neighbor I atoms at 2.686 ± 0.0010 A., with I-Sb-I 95.8 ± 0.3°, and 3 farther at 3.316 ± 0.010 A. The structure is thus intermediate between that of a mol. crystal, as in AsI3, and an ionic arrangement. Crystals of BiI3 have aH 7.52, and cH 20.72 A. A comparison of measured and calcd. powder intensities suggests that Bi is situated at the center of an I octahedron, so that the nonbonded electron pair is not sterically active and the structure is probably largely ionic.
- 52Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996, 77, 3865– 3868 DOI: 10.1103/PhysRevLett.77.3865Google Scholar52https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaK28XmsVCgsbs%253D&md5=55943538406ee74f93aabdf882cd4630Generalized gradient approximation made simplePerdew, John P.; Burke, Kieron; Ernzerhof, MatthiasPhysical Review Letters (1996), 77 (18), 3865-3868CODEN: PRLTAO; ISSN:0031-9007. (American Physical Society)Generalized gradient approxns. (GGA's) for the exchange-correlation energy improve upon the local spin d. (LSD) description of atoms, mols., and solids. We present a simple derivation of a simple GGA, in which all parameters (other than those in LSD) are fundamental consts. Only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked. Improvements over PW91 include an accurate description of the linear response of the uniform electron gas, correct behavior under uniform scaling, and a smoother potential.
- 53Pauling, L.; Hoard, J. XXXVII. The Crystal Structure of Cadmium Chloride Z. Kristallogr. - Cryst. Mater. 1930, 74, 546– 551 DOI: 10.1524/zkri.1930.74.1.546Google Scholar53https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaA3cXltFOhtw%253D%253D&md5=79dd995e9f07c53eb51baf8bd958c670The crystal structure of cadmium chloridePauling, Linus; Hoard, J. L.Zeitschrift fuer Kristallographie, Kristallgeometrie, Kristallphysik, Kristallchemie (1930), 74 (), 546-51CODEN: ZKKKAJ; ISSN:0044-2968.The unit of structure for CdCl2 is a rhombohedron with α = 36°02' and a = 6.23 A. U. contg. 1 mol. There is a layer structure along [0001], closely related to that of Cdl2. The Cl atoms are in approximate cubic closepacking. The relation of the CdCl2 and the Cdl2 structures is discussed, and a list of similar compds. which crystallize in each type is given.
- 54Bordas, J.; Robertson, J.; Jakobsson, A. Ultraviolet Properties and Band Structure of SnS2, SnSe2, CdI2, PbI2, BiI3 and BiOI Crystals J. Phys. C: Solid State Phys. 1978, 11, 2607 DOI: 10.1088/0022-3719/11/12/021Google Scholar54https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADyaE1MXnvVGrug%253D%253D&md5=4e1694e1c994d4a5ed738edafe25b2c4Ultraviolet properties and band structure of tin disulfide, tin diselenide, cadmium diiodide, lead diiodide, bismuth triiodide, and bismuth iodide oxide crystalsBordas, J.; Robertson, J.; Jakobsson, A.Journal of Physics C: Solid State Physics (1978), 11 (12), 2607-21CODEN: JPSOAW; ISSN:0022-3719.The UV reflectivity spectra of the layer materials SnS2, SnSe2, CdI2, PbI2, BiI3, and BiOI were detd. at 8-40 eV. The band structures for SnS2, CdI2, and PbI2 were calcd. using an LCAO approach and the partial and total d. of states for the valence and conduction bands were compared with the optical consts. detd. from Kramers-Kronig anal. of the exptl. data. The obsd. optical transitions from the metal d-core states were discussed in terms of an at.-like picture.
- 55Leguy, A. M. A.; Azarhoosh, P.; Alonso, M. I.; Campoy-Quiles, M.; Weber, O. J.; Yao, J.; Bryant, D.; Weller, M. T.; Nelson, J.; Walsh, A.; van Schilfgaarde, M.; Barnes, P. R. F. Experimental and Theoretical Optical Properties of Methylammonium Lead Halide Perovskites Nanoscale 2016, 8, 6317– 6327 DOI: 10.1039/C5NR05435DGoogle Scholar55https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXhs1SiurnP&md5=6150ead374052ea3ec95f7d16b767dc8Experimental and theoretical optical properties of methylammonium lead halide perovskitesLeguy, Aurelien M. A.; Azarhoosh, Pooya; Alonso, M. Isabel; Campoy-Quiles, Mariano; Weber, Oliver J.; Yao, Jizhong; Bryant, Daniel; Weller, Mark T.; Nelson, Jenny; Walsh, Aron; van Schilfgaarde, Mark; Barnes, Piers R. F.Nanoscale (2016), 8 (12), 6317-6327CODEN: NANOHL; ISSN:2040-3372. (Royal Society of Chemistry)The optical consts. of methylammonium lead halide single crystals CH3NH3PbX3 (X = I, Br, Cl) are interpreted with high level ab initio calcns. using the relativistic quasiparticle self-consistent GW approxn. (QSGW). Good agreement between the optical consts. derived from QSGW and those obtained from spectroscopic ellipsometry enables the assignment of the spectral features to their resp. inter-band transitions. We show that the transition from the highest valence band (VB) to the lowest conduction band (CB) is responsible for almost all the optical response of MAPbI3 between 1.2 and 5.5 eV (with minor contributions from the second highest VB and the second lowest CB). The calcns. indicate that the orientation of [CH3NH3]+ cations has a significant influence on the position of the bandgap suggesting that collective orientation of the org. moieties could result in significant local variations of the optical properties. The optical consts. and energy band diagram of CH3NH3PbI3 are then used to simulate the contributions from different optical transitions to a typical transient absorption spectrum (TAS).
- 56Sankapal, B.; Baviskar, P.; Salunkhe, D. Synthesis and Characterization of AgI Thin Films at Low Temperature J. Alloys Compd. 2010, 506, 268– 270 DOI: 10.1016/j.jallcom.2010.06.190Google Scholar56https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXhtVyqsrfN&md5=94a0ad31086db98586d107cd90418525Synthesis and characterization of AgI thin films at low temperatureSankapal, Babasaheb; Baviskar, Prashant; Salunkhe, DipakJournal of Alloys and Compounds (2010), 506 (1), 268-270CODEN: JALCEU; ISSN:0925-8388. (Elsevier B.V.)The growth of AgI (silver iodide) thin films has been performed in aq. medium using simple chem. method at room temp. (25 °C). Silver nitrate and potassium iodide have been used as source materials. Thin films were characterized by X-ray diffraction (XRD), SEM, at. force microscopy (AFM), surface photovoltage (SPV) and optical absorption spectroscopy. Glass and indium doped tin oxide (ITO) coated glass was used as substrates. The thin films were surface homogeneous with mixed β and γ-phases with surface roughness value of 21 nm. Optical transmission on glass exceeds 80% for 150 nm thick film with the direct band gap value of 2.85 eV. The change in crystal phases after transition temp. is studied by SPV measurements.
- 57Godby, R. W.; Schlüter, M.; Sham, L. J. Self-Energy Operators and Exchange-Correlation Potentials in Semiconductors Phys. Rev. B: Condens. Matter Mater. Phys. 1988, 37, 10159– 10175 DOI: 10.1103/PhysRevB.37.10159Google Scholar57https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A280%3ADC%252BC2sfhtFahsw%253D%253D&md5=311041734988d8d2986689e4a2f1effcSelf-energy operators and exchange-correlation potentials in semiconductorsGodby; Schluter; ShamPhysical review. B, Condensed matter (1988), 37 (17), 10159-10175 ISSN:0163-1829.There is no expanded citation for this reference.
- 58Pisoni, A.; Jaćimović, J.; Barišić, O. S.; Spina, M.; Gaál, R.; Forró, L.; Horváth, E. Ultra-Low Thermal Conductivity in Organic–Inorganic Hybrid Perovskite CH3NH3PbI3 J. Phys. Chem. Lett. 2014, 5, 2488– 2492 DOI: 10.1021/jz5012109Google Scholar58https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXhtFSmsLrE&md5=5557212c144e57caf4cb172ae64e6850Ultra-Low Thermal Conductivity in Organic-Inorganic Hybrid Perovskite CH3NH3PbI3Pisoni, Andrea; Jacimovic, Jacim; Barisic, Osor S.; Spina, Massimo; Gaal, Richard; Forro, Laszlo; Horvath, EndreJournal of Physical Chemistry Letters (2014), 5 (14), 2488-2492CODEN: JPCLCD; ISSN:1948-7185. (American Chemical Society)The authors report on the temp. dependence of thermal cond. of single cryst. and polycryst. organometallic perovskite CH3NH3PbI3. The comparable abs. values and temp. dependence of the two samples' morphologies indicate the minor role of the grain boundaries on the heat transport. Theor. modeling demonstrates the importance of the resonant scattering in both specimens. The interaction between phonon waves and rotational degrees of freedom of CH3NH3+ sublattice emerges as the dominant mechanism for attenuation of heat transport and for ultralow thermal cond. of 0.5 W/(Km) at room temp.
- 59Mettan, X.; Pisoni, R.; Matus, P.; Pisoni, A.; Jaćimović, J.; Náfrádi, B.; Spina, M.; Pavuna, D.; Forró, L.; Horváth, E. Tuning of the Thermoelectric Figure of Merit of CH3NH3MI3 (M = Pb,Sn) Photovoltaic Perovskites J. Phys. Chem. C 2015, 119, 11506– 11510 DOI: 10.1021/acs.jpcc.5b03939Google Scholar59https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2MXnsFOgu70%253D&md5=acb76244c75e00b064d6e5021eb07386Tuning of the Thermoelectric Figure of Merit of CH3NH3MI3 (M= Pb, Sn) Photovoltaic PerovskitesMettan, Xavier; Pisoni, Riccardo; Matus, Peter; Pisoni, Andrea; Jacimovic, Jacim; Nafradi, Balint; Spina, Massimo; Pavuna, Davor; Forro, Laszlo; Horvath, EndreJournal of Physical Chemistry C (2015), 119 (21), 11506-11510CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)The hybrid halide perovskites, the very performant compds. in photovoltaic applications, possess large Seebeck coeff. and low thermal cond., making them potentially interesting high figure of merit (ZT) materials. For this purpose, one needs to tune the elec. cond. of these semiconductors to higher values. The authors have studied the CH3NH3MI3 (M = Pb,Sn) samples in pristine form showing very low ZT values for both materials; however, photoinduced doping (in M = Pb) and chem. doping (in M = Sn) indicate that, by further doping optimization, ZT can be enhanced toward unity and reach the performance level of the presently most efficient thermoelec. materials.
- 60Han, H.; Hong, M.; Gokhale, S. S.; Sinnott, S. B.; Jordan, K.; Baciak, J. E.; Nino, J. C. Defect Engineering of BiI3 Single Crystals: Enhanced Electrical and Radiation Performance for Room Temperature Gamma-Ray Detection J. Phys. Chem. C 2014, 118, 3244– 3250 DOI: 10.1021/jp411201kGoogle Scholar60https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXpt1Ortw%253D%253D&md5=29475039d22fb1a2ce206ae477b863d9Defect Engineering of BiI3 Single Crystals: Enhanced Electrical and Radiation Performance for Room Temperature Gamma-Ray DetectionHan, HyukSu; Hong, Minki; Gokhale, Sasmit S.; Sinnott, Susan B.; Jordan, Kelly; Baciak, James E.; Nino, Juan C.Journal of Physical Chemistry C (2014), 118 (6), 3244-3250CODEN: JPCCCK; ISSN:1932-7447. (American Chemical Society)Undoped and Sb-doped BiI3 (SBI) single crystals are grown via the vertical Bridgman growth technique. Elec. properties, such as resistivity and leakage current, in addn. to radiation response measurements were performed on both BiI3 and SBI single crystal detectors. The resistivity of SBI (2.63109 Ω cm) increases by an order of magnitude compared to that of BiI3 (1.45 × 108 Ω cm). Also, leakage currents of SBI (10-2 μA/cm2) decrease by four orders magnitude relative to BiI3. The radiation response of the SBI indicates that less polarization exists under bias for prolonged periods of time, making SBI a promising material for use in gamma-ray detector applications. D. functional theory (DFT) calcns. predict that Sb forms strong covalent bonds with neighboring iodine ions and that the Sb-I dimer can be formed when Sb is doped into the BiI3 lattice. Defect modeling verifies that substitution of Bi ions with Sb and incorporation of Sb in iodine vacancy sites can effectively decrease the formation and migration of iodine vacancies, which significantly improves radiation detection performance of the material.
- 61Devidas, T. R.; Shekar, N. V. C.; Sundar, C. S.; Chithaiah, P.; Sorb, Y. A.; Bhadram, V. S.; Chandrabhas, N.; Pal, K.; Waghmare, U. V.; Rao, C. N. R. Pressure-Induced Structural Changes and Insulator-Metal Transition in Layered Bismuth Triiodide, BiI3: a Combined Experimental and Theoretical Study J. Phys.: Condens. Matter 2014, 26, 275502 DOI: 10.1088/0953-8984/26/27/275502Google Scholar61https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2cXht1alsbnL&md5=d2233284fc9ca2e68a358fbac67d8ce6Pressure-induced structural changes and insulator-metal transition in layered bismuth triiodide, BiI3: a combined experimental and theoretical studyDevidas, T. R.; Chandra Shekar, N. V.; Sundar, C. S.; Chithaiah, P.; Sorb, Y. A.; Bhadram, V. S.; Chandrabhas, N.; Pal, K.; Waghmare, U. V.; Rao, C. N. R.Journal of Physics: Condensed Matter (2014), 26 (27), 275502/1-275502/9, 9 pp.CODEN: JCOMEL; ISSN:0953-8984. (IOP Publishing Ltd.)Noting that BiI3 and the known topol. insulator (TI) Bi2Se3 have the same high symmetry parent structures, and that it is desirable to find a wide-band gap TI, the authors det. here the effects of pressure on the structure, phonons and electronic properties of rhombohedral BiI3. The authors report a pressure-induced insulator-metal transition near 1.5 GPa, using high pressure elec. resistivity and Raman measurements. X-ray diffraction studies, as a function of pressure, reveal a structural peculiarity of the BiI3 crystal, with a drastic drop in c/a ratio at 1.5 GPa, and a structural phase transition from rhombohedral to monoclinic structure at 8.8 GPa. The metallic phase, at relatively low pressures, exhibits minimal resistivity at low temps., similar to that in Bi2Se3. The authors corroborate these findings with 1st-principles calcns. and suggest that the drop in the resistivity of BiI3 in the 1-3 GPa range of pressure arises possibly from the appearance of an intermediate crystal phase with a lower band-gap and hexagonal crystal structure. Calcd. Born effective charges reveal metallic states in the structural vicinity of rhombohedral BiI3. Changes in the topol. of the electronic bands of BiI3 with pressure, and a sharp decrease in the c/a ratio <2 GPa, give rise to changes in the slope of phonon frequencies near that pressure.
- 62Castro-Hermosa, S.; Yadav, S. K.; Vesce, L.; Guidobaldi, A.; Reale, A.; Di Carlo, A. D.; Brown, T. M. Stability Issues Pertaining Large Area Perovskite and Dye-Sensitized Solar Cells and Modules J. Phys. D: Appl. Phys. 2017, 50, 033001 DOI: 10.1088/1361-6463/50/3/033001Google Scholar62https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC2sXpslKnu7o%253D&md5=65555e8925515c8fe78155721e13e336Stability issues pertaining large area perovskite and dye-sensitized solar cells and modulesCastro-Hermosa, S.; Yadav, S. K.; Vesce, L.; Guidobaldi, A.; Reale, A.; Di Carlo, A.; Brown, T. M.Journal of Physics D: Applied Physics (2017), 50 (3), 033001/1-033001/31CODEN: JPAPBE; ISSN:0022-3727. (IOP Publishing Ltd.)Perovskite and dye-sensitized solar cells are PV technologies which hold promise for PV application. Arguably, the biggest issue facing these technologies is stability. The vast majority of studies have been limited to small area lab. cells. Moisture, oxygen, UV light, thermal and elec. stresses are leading the degrdn. causes. There remains a shortage of stability investigations on large area devices, in particular modules. At the module level there exist particular challenges which can be different from those at the small cell level such as encapsulation (not only of the unit cells but of interconnections and contacts), non-uniformity of the layer stacks and unit cells, reverse bias stresses, which are important to investigate for technologies that aim for industrial acceptance. Herein we present a review of stability investigations published in the literature pertaining large area perovskite and dye-sensitized solar devices fabricated both on rigid (glass) and flexible substrates.
- 63Campbell, B. J.; Stokes, H. T.; Tanner, D. E.; Hatch, D. M. ISODISPLACE: a Web-Based Tool for Exploring Structural Distortions J. Appl. Crystallogr. 2006, 39, 607– 614 DOI: 10.1107/S0021889806014075Google Scholar63https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD28XntFGlt7c%253D&md5=358251d9c9f5b623b43c2bbcd4492901ISODISPLACE. A web-based tool for exploring structural distortionsCampbell, Branton J.; Stokes, Harold T.; Tanner, David E.; Hatch, Dorian M.Journal of Applied Crystallography (2006), 39 (4), 607-614CODEN: JACGAR; ISSN:0021-8898. (Blackwell Publishing Ltd.)ISODISPLACE is a new internet-server tool for exploring structural phase transitions. Given parent-phase structural information, it generates at. displacement patterns induced by irreducible representations of the parent space-group symmetry and allows a user to visualize and manipulate the amplitude of each distortion mode interactively. ISODISPLACE is freely accessible at http://stokes.byu.edu/isodisplace.html via common internet browsers.
- 64Perez-Mato, J. M.; Orobengoa, D.; Aroyo, M. I. Mode Crystallography of Distorted Structures Acta Crystallogr., Sect. A: Found. Crystallogr. 2010, 66, 558– 590 DOI: 10.1107/S0108767310016247Google Scholar64https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3cXhtVeku7vP&md5=f8ae814ab6bed111332487e7bfc77860Mode crystallography of distorted structuresPerez-Mato, J. M.; Orobengoa, D.; Aroyo, M. I.Acta Crystallographica, Section A: Foundations of Crystallography (2010), 66 (5), 558-590CODEN: ACACEQ; ISSN:0108-7673. (International Union of Crystallography)A review. The description of displacive distorted structures in terms of symmetry-adapted modes is reviewed. A specific parameterization of the symmetry-mode decompn. of these pseudosym. structures defined on the setting of the exptl. space group is proposed. This approach closely follows crystallog. conventions and permits a straightforward transformation between symmetry-mode and conventional descriptions of the structures. Multiple examples are presented showing the insight provided by the symmetry-mode approach. The methodol. is shown at work, illustrating its various possibilities for improving the characterization of distorted structures, for example: detection of hidden structural correlations, identification of fundamental and marginal degrees of freedom, redn. of the effective no. of at. positional parameters, quant. comparison of structures with the same or different space group, detection of false refinement min., systematic characterization of thermal behavior, rationalization of phase diagrams and various symmetries in families of compds. etc. The close relation of the symmetry-mode description with the superspace formalism applied to commensurate superstructures is also discussed. Finally, the application of this methodol. in the field of ab initio or first-principles calcns. is outlined. At present, there are several freely available user-friendly computer tools for performing automatic symmetry-mode analyses. The use of these programs does not require a deep knowledge of group theory and can be applied either a posteriori to analyze a given distorted structure or a priori to parameterize the structure to be detd. It is hoped that this article will encourage the use of these tools. All the examples presented here have been worked out using the program AMPLIMODES.
- 65Patterson, A. L. Homometric Structures Nature 1939, 143, 939– 940 DOI: 10.1038/143939b0Google ScholarThere is no corresponding record for this reference.
- 66van Smaalen, S.; Lam, E. J.; Lüdecke, J. Structure of the Charge-Density Wave in(TaSe4)2I J. Phys.: Condens. Matter 2001, 13, 9923– 9936 DOI: 10.1088/0953-8984/13/44/308Google Scholar66https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD3MXovVent7w%253D&md5=b9891810b61f0689387db4051d62d510Structure of the charge-density wave in (TaSe4)2IVan Smaalen, Sander; Lam, Erwin J.; Ludecke, JensJournal of Physics: Condensed Matter (2001), 13 (44), 9923-9936CODEN: JCOMEL; ISSN:0953-8984. (Institute of Physics Publishing)(TaSe4)2I is a quasi-one-dimensional (1D) elec. conductor. It exhibits a phase transition at TCDW = 263 K towards a charge-d.-wave (CDW) state at low temps. We report a full structure refinement of the incommensurately modulated structure in the CDW state at T = 110 K against synchrotron radiation, single-crystal x-ray diffraction data. At room temp. the crystal structure has tetragonal symmetry with space group I422. In the CDW state each main reflection in the x-ray scattering is surrounded by eight incommensurate satellites at (±0.064, ±0.064, ±0.151). The CDW state is found to comprise four domains, and it is characterized by one modulation wavevector. With respect to a 2 × 2 × 1 supercell it has the symmetry of the superspace group F2(0, β, γ) with β = 0.128 and γ = 0.151. The first part of the modulation is found to be a transverse acoustic wave, involving amplitudes of similar magnitudes of about 0.13 Å on all atoms. The second part of the modulation involves displacements of the Ta atoms of about 0.03 Å, that are parallel to the 1D chains. These are interpreted as reflecting the CDW. A Landau free-energy model is developed, that shows that symmetry arguments allow the phase transition to be second order.
- 67Fourcroy, P. H.; Carre, D.; Thevet, F.; Rivet, J. Structure du Tetraiodure de Cuivre(I) et de Bismuth(III), CuBiI4 Acta Crystallogr., Sect. C: Cryst. Struct. Commun. 1991, 47, 2023– 2025 DOI: 10.1107/S0108270191005309Google ScholarThere is no corresponding record for this reference.
- 68Lintereur, A. T.; Qiu, W.; Nino, J. C.; Baciak, J. Characterization of Bismuth Tri-Iodide Single Crystals for Wide Band-Gap Semiconductor Radiation Detectors Nucl. Instrum. Methods Phys. Res., Sect. A 2011, 652, 166– 169 DOI: 10.1016/j.nima.2010.12.013Google Scholar68https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BC3MXhtF2jtbfM&md5=c7daaa87d5593062f6341ba36ce710b4Characterization of bismuth tri-iodide single crystals for wide band-gap semiconductor radiation detectorsLintereur, Azaree T.; Qiu, Wei; Nino, Juan C.; Baciak, JamesNuclear Instruments & Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment (2011), 652 (1), 166-169CODEN: NIMAER; ISSN:0168-9002. (Elsevier B.V.)Bismuth tri-iodide is a wide band-gap semiconductor material that may be able to operate as a radiation detector without any cooling mechanism. This material has a higher effective at. no. than germanium and CdZnTe, and thus should have a higher gamma-ray detection efficiency, particularly for moderate and high energy gamma-rays. Unfortunately, not much is known about bismuth tri-iodide, and the general properties of the material need to be investigated. Bismuth tri-iodide does not suffer from some of the material issues, such as a solid state phase transition and dissocn. in air, that mercuric iodide (another high-Z, wide band-gap semiconductor) does. Thus, bismuth tri-iodide is both easier to grow and handle than mercuric iodide. A modified vertical Bridgman growth technique is being used to grow large, single bismuth tri-iodide crystals. Zone refining is being performed to purify the starting material and increase the resistivity of the crystals. The single crystals being grown are typically several hundred mm3. The larger crystals grown are approx. 2 cm3. Initial detectors are being fabricated using both gold and palladium electrodes and palladium wire. The electron mobility measured using an alpha source was detd. to be 260±50 cm2/Vs. An alpha spectrum was recorded with one of the devices; however the detector appears to suffer from polarization.
- 69Standard Tables for Reference Solar Spectral Irradiances: Direct Normal and Hemispherical on 37°C; Tilted Surface; ASTM International: 2012.Google ScholarThere is no corresponding record for this reference.
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