Intermediate Band Material of Titanium-Doped Tin Disulfide for Wide Spectrum Solar Absorption
- Keyan HuKeyan HuCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaSchool of Mechanical and Electrical Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333403, PR ChinaMore by Keyan Hu,
- Dong WangDong WangCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaMore by Dong Wang,
- Wei ZhaoWei ZhaoCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaMore by Wei Zhao,
- Yuhao GuYuhao GuBeijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaMore by Yuhao Gu,
- Kejun BuKejun BuCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaMore by Kejun Bu,
- Jie PanJie PanCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaMore by Jie Pan,
- Peng QinPeng QinCAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaMore by Peng Qin,
- Xian Zhang*Xian Zhang*E-mail: [email protected]CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaBeijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaMore by Xian Zhang, and
- Fuqiang Huang*Fuqiang Huang*E-mail: [email protected]CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, PR ChinaBeijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, PR ChinaMore by Fuqiang Huang
Abstract
Intermediate band (IB) materials are of great significance due to their superior solar absorption properties. Here, two IBs peaking at 0.88 and 1.33 eV are reported to be present in the forbidden gap of semiconducting SnS2 (Eg = 2.21 eV) by doping titanium up to 6 atom % into the Sn site via a solid-state reaction at 923 K. The solid solution of Sn1–xTixS2 is able to be formed, which is attributed to the isostructural structure of SnS2 and TiS2. These two IBs were detected in the UV–vis–NIR absorption spectra with the appearance of two additional absorption responses at the respective regions, which in good agreement with the conclusion of first-principles calculations. The valence band maximum (VBM) consists mostly of the S 3p state, and the conduction band minimum (CBM) is the hybrid state composing of Ti 3d (eg), S 3p, and Sn 5s, and the IBs are mainly the nondegenerate t2g states of Ti 3d orbitals. The electronic states of Ti 3d reveal a good ability to transfer electrons between metal and S atoms. These wide-spectrum absorption IBs bring about more solar energy utilization to enhance solar thermal collection and photocatalytic degradation of methyl orange.
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