High In-Plane Seebeck Coefficients of Bi–Sb–Te Alloy Thin Films with Growth Texture and Their Field-Controlled Seebeck Coefficients
- No-Won ParkNo-Won ParkDepartment of Physics, Chung-Ang University, Seoul 06974, Republic of KoreaMore by No-Won Park
- Won-Yong Lee
- Gil-Sung KimGil-Sung KimDepartment of Physics, Chung-Ang University, Seoul 06974, Republic of KoreaMore by Gil-Sung Kim
- Young-Gui YoonYoung-Gui YoonDepartment of Physics, Chung-Ang University, Seoul 06974, Republic of KoreaMore by Young-Gui Yoon
- Takashi KikkawaTakashi KikkawaDepartment of Applied Physics, The University of Tokyo, Tokyo 113-8656, JapanMore by Takashi Kikkawa
- Eiji SaitohEiji SaitohInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanWPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, JapanDepartment of Applied Physics, The University of Tokyo, Tokyo 113-8656, JapanMore by Eiji Saitoh
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- Sang-Kwon Lee*
Bismuth antimony telluride (BixSb2–xTe3, BST) is an alloy that has widely been used over the past 5 decades for excellent p-type thermoelectric (TE) materials that operate around 300 K, for example, for electronic refrigeration and generators with other n-type TE materials, including Bi2Te3 alloy materials. However, despite significant progress in bulk materials, there has been less progress and less detailed TE information on Seebeck coefficients in the thin-film form. Here, we report reliable in-plane Seebeck coefficients of p-type Bi0.5Sb1.5Te3 (BST) films and Bi2Te3/Bi0.5Sb1.5Te3 (BT/BST) multilayer films at 300 K using a promising measurement technique with a precisely controlled temperature difference and excellent linearity. Due to the growth texture of the films, a high in-plane Seebeck coefficient of ∼298 μV/K was achieved in 100 nm thick BST films at 300 K, which is an increase of ∼224% compared to that in 200 nm thick BT/BST multilayer films. Moreover, we demonstrate field-controlled Seebeck coefficients of p-BST films by a backside gate configuration in a field-effect transistor. Our results demonstrate the importance of providing a promising measurement technique and reliable information on the in-plane Seebeck coefficients of Bi–Sb–Te alloy thin films for further TE device applications.
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