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Substitutional Tin Acceptor States in Black Phosphorus
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    C: Physical Properties of Materials and Interfaces

    Substitutional Tin Acceptor States in Black Phosphorus
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    • Mark Wentink
      Mark Wentink
      Department of Electronic and Electrical Engineering, University College London, WC1E 7JE London, U.K.
      London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.
      More by Mark Wentink
    • Julian Gaberle
      Julian Gaberle
      Department of Physics and Astronomy, University College London, WC1E 6BT London, U.K.
    • Martik Aghajanian
      Martik Aghajanian
      Departments of Materials and Physics and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, SW7 2AZ London, U.K.
    • Arash A. Mostofi
      Arash A. Mostofi
      Departments of Materials and Physics and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, SW7 2AZ London, U.K.
    • Neil J. Curson
      Neil J. Curson
      Department of Electronic and Electrical Engineering, University College London, WC1E 7JE London, U.K.
      London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.
    • Johannes Lischner
      Johannes Lischner
      Departments of Materials and Physics and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, SW7 2AZ London, U.K.
    • Steven R. Schofield
      Steven R. Schofield
      Department of Physics and Astronomy, University College London, WC1E 6BT London, U.K.
      London Centre for Nanotechnology, University College London, WC1H 0AH London, U.K.
    • Alexander L. Shluger
      Alexander L. Shluger
      Department of Physics and Astronomy, University College London, WC1E 6BT London, U.K.
    • Anthony J. Kenyon*
      Anthony J. Kenyon
      Department of Electronic and Electrical Engineering, University College London, WC1E 7JE London, U.K.
      *Email: [email protected] (A.K.).
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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2021, 125, 41, 22883–22889
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.jpcc.1c07115
    Published October 10, 2021
    Copyright © 2021 American Chemical Society

    Abstract

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    Nominally pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunneling microscopy (STM) images of black phosphorus reveal the presence of long-range double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP and the defect features observed in STM images can be attributed to substitutional tin impurities. We show that black phosphorus samples produced through two common synthesis pathways contain tin impurities, and we demonstrate that the ground state of substitutional tin impurities is negatively charged for a wide range of Fermi level positions within the BP band gap. The localized negative charge of the tin impurities induces hydrogenic states in the band gap, and it is the 2p level that sits at the valence band edge that gives rise to the double-lobed features observed in STM images.

    Copyright © 2021 American Chemical Society

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    This article is cited by 7 publications.

    1. Nguyen Viet Chien, Hyun Min Park, Hosun Shin, Jae Yong Song. Multiscale Defect-Assisted Enhancement of Thermoelectric Transport in Sn-Doped Black Phosphorus Polycrystals. ACS Omega 2025, 10 (15) , 15621-15628. https://doi.org/10.1021/acsomega.5c00918
    2. Rishav Harsh, Sourav Mondal, Devina Sharma, Mehdi Bouatou, Cyril Chacon, Maxim Ilyn, Celia Rogero, Vincent Repain, Amandine Bellec, Yann Girard, Sylvie Rousset, Raman Sankar, Woei Wu Pai, Shobhana Narasimhan, Jérôme Lagoute. Identification and Manipulation of Defects in Black Phosphorus. The Journal of Physical Chemistry Letters 2022, 13 (27) , 6276-6282. https://doi.org/10.1021/acs.jpclett.2c01370
    3. Carsten Speckmann, Andrea Angeletti, Lukáš Kývala, David Lamprecht, Felix Herterich, Clemens Mangler, Lado Filipovic, Christoph Dellago, Cesare Franchini, Jani Kotakoski. Electron‐Beam‐Induced Adatom‐Vacancy‐Complexes in Mono‐ and Bilayer Phosphorene. Advanced Materials Interfaces 2025, 12 (9) https://doi.org/10.1002/admi.202400784
    4. Xuan Zhang, Wei Zhang. Synthesis of black phosphorus and its applications. Materials Today Physics 2024, 43 , 101396. https://doi.org/10.1016/j.mtphys.2024.101396
    5. Yongjie Wang, Qiang Yu, Jie Li, Junyong Wang, Kai Zhang. Insight into the growth mechanism of black phosphorus. Frontiers of Physics 2023, 18 (4) https://doi.org/10.1007/s11467-023-1265-7
    6. Quanjie Zhong. Intrinsic and engineered properties of black phosphorus. Materials Today Physics 2022, 28 , 100895. https://doi.org/10.1016/j.mtphys.2022.100895
    7. Martik Aghajanian, Arash A. Mostofi, Johannes Lischner. Electronic structure of monolayer and bilayer black phosphorus with charged defects. Physical Review Materials 2022, 6 (4) https://doi.org/10.1103/PhysRevMaterials.6.044002

    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2021, 125, 41, 22883–22889
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.jpcc.1c07115
    Published October 10, 2021
    Copyright © 2021 American Chemical Society

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