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Single Step Solution Processed GaAs Thin Films from GaMe3 and tBuAsH2 under Ambient Pressure

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Materials Chemistry Centre, Department of Chemistry, and Kathleen Lonsdale Materials Chemistry, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
§ Applied Materials Inc., 3225 Oakmead Village Drive, M/S 1240, P.O. Box 58039, Santa Clara, California 95052-8039, United States
*E-mail [email protected]; Tel +44 (0)207 679 6528; Fax +44 (0)207 679 7463 (C.J.C.).
Cite this: J. Phys. Chem. C 2016, 120, 13, 7013–7019
Publication Date (Web):March 18, 2016
https://doi.org/10.1021/acs.jpcc.6b00850
Copyright © 2016 American Chemical Society

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    Abstract

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    This article reports on the possibility of low-cost GaAs formed under ambient pressure via a single step solution processed route from only readily available precursors, tBuAsH2 and GaMe3. The thin films of GaAs on glass substrates were found to have good crystallinity with crystallites as large as 150 nm and low contamination with experimental results matching well with theoretical density of states calculations. These results open up a route to efficient and cost-effective scale up of GaAs thin films with high material properties for widespread industrial use. Confirmation of film quality was determined using XRD, Raman, EDX mapping, SEM, HRTEM, XPS, and SIMS.

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