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Coincidence Lattices of 2D Crystals: Heterostructure Predictions and Applications

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Grupo de Materiais Semicondutores e Nanotecnologia, Instituto Tecnológico de Aeronáutica, DCTA, 12228-900 São José dos Campos, Brazil
Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, D-07743 Jena, Germany
*D.S.K.: e-mail, [email protected]
*F.B.: e-mail, [email protected]
*M.M.: e-mail, [email protected]
*L.K.T.: e-mail, [email protected]; phone, +55 12 3947-5849.
Cite this: J. Phys. Chem. C 2016, 120, 20, 10895–10908
Publication Date (Web):April 26, 2016
Copyright © 2016 American Chemical Society

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    Abstract Image

    van der Waals heterostructures provide many novel applications due to a combination of properties. However, their experimental construction and theoretical simulation suffer from the incommensurability of 2D crystals with respect to their symmetry and their lattice constants. In this work, we present a simplified method to predict favorable combinations of 2D crystals based on the coincidence lattice method. We present a huge set of possible heterostructures made from transition-metal dichalcogenides, group IV dichalcogenides, graphene, and hexagonal boron nitride. The method is then validated for theoretically and experimentally studied 2D crystals and van der Waals-bonded heterostructures. The power of the approach is demonstrated by comparison of resulting supercell sizes, strain, and relative orientation with experimental and theoretical data available. To display the prospects of this approach, we simulate three heterostructures and analyze the resulting structural and electronic properties, finding favorable stackings and small changes in band alignments in the weakly interacting heterojunction.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.jpcc.6b01496.

    • Full table containing predictions of coincidence lattices based on TMDCs, group IV dichalcogenides, graphene, and group III–V compounds studied in this work (PDF)

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