Correction to “Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires”
In our original article, the assignments of the Eu3+ intrashell lines for the implanted GaN NWs and layers were published incorrectly in Table 2 (page 17958) and in the Table 3 title (page 17959), as well as in Figure 3 (page 17957) and Figure 5 (page 17960). Corrected versions of Table 2 (corrections in bold) and Figures 3 and 5 are given here. In the Table 3 title, 5D1 → 7F2 should be read as 5D0 → 7F2.
| peak positions (±0.1 nm) | ||||
|---|---|---|---|---|
| transitions | fluence (ions cm–2) | angle (deg) | GaN NWs | GaN layers |
| 5D0 → 7F1 | 5 × 1013 | 20 | 598.8 | 600.5 |
| 601.2 | ||||
| 600.4 | 602.2 | |||
| 601.1 | ||||
| 602.2 | ||||
| 3 × 1015 | 20 | 598.7 | 601.0 | |
| 601.1 | ||||
| 602.2 | ||||
| 30 | 598.8 | 598.7 | ||
| 601.1 | ||||
| 601.1 | ||||
| 602.3 | ||||
| 5D0 → 7F2 | 5 × 1013 | 20 | 618.8 | 621.0 |
| 620.8 | 622.0 | |||
| 622.9 | ||||
| 621.7 | ||||
| 622.6 | ||||
| 3 × 1015 | 20 | 618.7 | 620.9 | |
| 621.9 | ||||
| 620.7 | 622.8 | |||
| 621.6 | ||||
| 622.6 | ||||
| 30 | 618.8 | 621.0 | ||
| 621.9 | ||||
| 619.4 | ||||
| 622.8 | ||||
| 620.9 | ||||
| 621.7 | ||||
| 622.7 | ||||
| 5D0 → 7F2 | 5 × 1013 | 20 | 632.8 | 634.6 |
| or5D1 → 7F4 | 634.1 | |||
| 3 × 1015 | 20 | 632.8 | 634.8 | |
| 634.1 | ||||
| 30 | 632.8 | 632.8 | ||
| 634.2 | 634.3 | |||
| 5D0 → 7F3 | 5 × 1013 | 20 | 660.5 | 662.3 |
| 662.1 | 664.3 | |||
| 664.0 | 665.4 | |||
| 665.2 | ||||
| 3 × 1015 | 20 | 656.5 | 664.0 | |
| 660.5 | ||||
| 662.1 | ||||
| 665.4 | ||||
| 664.0 | ||||
| 665.1 | ||||
| 30 | 656.5 | 662.2 | ||
| 662.1 | 664.1 | |||
| 664.1 | 665.3 | |||
| 665.2 | ||||
Figure 3
Figure 3. (a), (b), and (c) Low temperature PL spectra of the selected NWs and layers implanted with Eu3+ ions, acquired with above bandgap excitation (He–Cd, 325 nm). (b) High resolution spectra of the ion-related emission lines. (c) PL spectra of the visible spectral region (green/yellow luminescence spectral region). The asterisk denotes the second order of the D0X emission.
Figure 5
Figure 5. Temperature dependent PL of the lines of the Eu3+ ion for the (a) NWs and (b) layer samples implanted with 3 × 1015 Eu/cm2 and an angle of 30°. The spectra were obtained upon 325 nm excitation. (c) and (d) Integrated intensity of the 5D0 → 7F2 transition as a function of temperature for all the NWs and layers, respectively.
This erratum does not affect any discussion and conclusions reported in the paper; however, this correction is necessary for comparison with reported works in the subject, e.g., refs 1 and 2.
References
This article references 2 other publications.
- 1Monteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A.; Sa; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E. Photoluminescence and lattice location of Eu and Pr implanted GaN samples Phys. B 2001, 308–310, 22– 25 DOI: 10.1016/S0921-4526(01)00656-1[Crossref], [CAS], Google Scholar1https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XisVWksA%253D%253D&md5=a931c22242e9fae2cf6327148392cd96Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Sa Ferreira, R. A.; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.Physica B: Condensed Matter (Amsterdam, Netherlands) (2001), 308-310 (), 22-25CODEN: PHYBE3; ISSN:0921-4526. (Elsevier Science B.V.)Rare earth (RE) ions implanted GaN films were studied by optical spectroscopy and RBS techniques. Sharp emission lines due to intra-4fn shell transitions can be obsd. even at room temp. for the Eu3+ and Pr3+. The photoluminescence spectra recorded by the above band gap excitation reveal dominant transitions due to the 5D0 7F1,2,3 lines at 6004, 6211 and 6632 A for the Eu3+ and 3P0,1 3F2,3 at 6450 and 6518 A, resp., for the Pr3+. We report on the temp. dependence of the intra-ionic emissions as well as on the lattice site location of the RE detailed angular scans through the 〈0 0 0 1〉 and 〈1 0 1 1〉 axial directions; which indicates that for Pr, complete substitutionality on the Ga sites was achieved while for Eu a Ga displaced site was found.
- 2Peng, H.; Lee, C.-W.; Everitt, H. O.; Munasinghe, C.; Lee, D. S.; Steckl, A. J. Spectroscopic and energy transfer studies of Eu3+ centers in GaN J. Appl. Phys. 2007, 102, 073520 DOI: 10.1063/1.2783893[Crossref], [CAS], Google Scholar2https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhtF2lsLrN&md5=f448bbf8cb07d0a6ae1052400fa7dcadSpectroscopic and energy transfer studies of Eu3+ centers in GaNPeng, Hongying; Lee, Chang-Won; Everitt, Henry O.; Munasinghe, Chanaka; Lee, D. S.; Steckl, Andrew J.Journal of Applied Physics (2007), 102 (7), 073520/1-073520/9CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)Photoluminescence (PL), photoluminescence excitation (PLE), and time-resolved PL spectroscopies have been carried out at room temp. and 86 K on transitions from 5D2, 5D1, and 5D0 excited states to numerous 7FJ ground states of Eu-doped GaN films grown by conventional solid-source mol. beam epitaxy (MBE) and interrupted growth epitaxy MBE. Within the visible spectral range of 1.8-2.7 eV, 42 spectral features were obsd. and assignments were attempted for each transition. PL and PLE indicate that four Eu3+ centers exist in the GaN lattice whose relative concn. can be controlled by the duration of growth interruption. The energy levels for these four sites are self-consistently obtained, and time-resolved photoluminescence measurements reveal details about the radiative and nonradiative relaxations of excitation among these levels. The data indicate a near-resonant cross relaxation among these sites. The 5D2 and 5D1 states are obsd. to decay nonradiatively by filling the 5D0 state with characteristic times of 2.4 and 2.8 μs, resp. The 5D0 state is found to relax in a manner that depends slightly on the final state and dopant site.
Cited By
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- N. Ben Sedrine, J. Rodrigues, D. Nd. Faye, A. J. Neves, E. Alves, M. Bockowski, V. Hoffmann, M. Weyers, K. Lorenz, M. R. Correia, T. Monteiro. Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites. ACS Applied Nano Materials 2018, 1 (8) , 3845-3858. https://doi.org/10.1021/acsanm.8b00612
- M. Peres, E. Nogales, B. Mendez, K. Lorenz, M. R. Correia, T. Monteiro, N. Ben Sedrine. Eu Activation in β -Ga 2 O 3 MOVPE Thin Films by Ion Implantation. ECS Journal of Solid State Science and Technology 2019, 8 (7) , Q3097-Q3102. https://doi.org/10.1149/2.0191907jss
- N. Ben Sedrine, J. Rodrigues, J. Cardoso, D.Nd. Faye, M. Fialho, S. Magalhães, A.F. Martins, A.J. Neves, E. Alves, M. Bockowski, V. Hoffmann, M. Weyers, K. Lorenz, M.R. Correia, T. Monteiro. Optical investigations of europium ion implanted in nitride-based diode structures. Surface and Coatings Technology 2018, 355 , 40-44. https://doi.org/10.1016/j.surfcoat.2018.02.004
- J. Cardoso, N. Ben Sedrine, A. Alves, M. A. Martins, M. Belloeil, B. Daudin, D. Nd. Faye, E. Alves, K. Lorenz, A. J. Neves, M. R. Correia, T. Monteiro. Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications. Applied Physics Letters 2018, 113 (20) , 201905. https://doi.org/10.1063/1.5048772
Figure 3
Figure 3. (a), (b), and (c) Low temperature PL spectra of the selected NWs and layers implanted with Eu3+ ions, acquired with above bandgap excitation (He–Cd, 325 nm). (b) High resolution spectra of the ion-related emission lines. (c) PL spectra of the visible spectral region (green/yellow luminescence spectral region). The asterisk denotes the second order of the D0X emission.
Figure 5
Figure 5. Temperature dependent PL of the lines of the Eu3+ ion for the (a) NWs and (b) layer samples implanted with 3 × 1015 Eu/cm2 and an angle of 30°. The spectra were obtained upon 325 nm excitation. (c) and (d) Integrated intensity of the 5D0 → 7F2 transition as a function of temperature for all the NWs and layers, respectively.
References
ARTICLE SECTIONSThis article references 2 other publications.
- 1Monteiro, T.; Boemare, C.; Soares, M. J.; Ferreira, R. A.; Sa; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E. Photoluminescence and lattice location of Eu and Pr implanted GaN samples Phys. B 2001, 308–310, 22– 25 DOI: 10.1016/S0921-4526(01)00656-1[Crossref], [CAS], Google Scholar1https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD38XisVWksA%253D%253D&md5=a931c22242e9fae2cf6327148392cd96Photoluminescence and lattice location of Eu and Pr implanted GaN samplesMonteiro, T.; Boemare, C.; Soares, M. J.; Sa Ferreira, R. A.; Carlos, L. D.; Lorenz, K.; Vianden, R.; Alves, E.Physica B: Condensed Matter (Amsterdam, Netherlands) (2001), 308-310 (), 22-25CODEN: PHYBE3; ISSN:0921-4526. (Elsevier Science B.V.)Rare earth (RE) ions implanted GaN films were studied by optical spectroscopy and RBS techniques. Sharp emission lines due to intra-4fn shell transitions can be obsd. even at room temp. for the Eu3+ and Pr3+. The photoluminescence spectra recorded by the above band gap excitation reveal dominant transitions due to the 5D0 7F1,2,3 lines at 6004, 6211 and 6632 A for the Eu3+ and 3P0,1 3F2,3 at 6450 and 6518 A, resp., for the Pr3+. We report on the temp. dependence of the intra-ionic emissions as well as on the lattice site location of the RE detailed angular scans through the 〈0 0 0 1〉 and 〈1 0 1 1〉 axial directions; which indicates that for Pr, complete substitutionality on the Ga sites was achieved while for Eu a Ga displaced site was found.
- 2Peng, H.; Lee, C.-W.; Everitt, H. O.; Munasinghe, C.; Lee, D. S.; Steckl, A. J. Spectroscopic and energy transfer studies of Eu3+ centers in GaN J. Appl. Phys. 2007, 102, 073520 DOI: 10.1063/1.2783893[Crossref], [CAS], Google Scholar2https://chemport.cas.org/services/resolver?origin=ACS&resolution=options&coi=1%3ACAS%3A528%3ADC%252BD2sXhtF2lsLrN&md5=f448bbf8cb07d0a6ae1052400fa7dcadSpectroscopic and energy transfer studies of Eu3+ centers in GaNPeng, Hongying; Lee, Chang-Won; Everitt, Henry O.; Munasinghe, Chanaka; Lee, D. S.; Steckl, Andrew J.Journal of Applied Physics (2007), 102 (7), 073520/1-073520/9CODEN: JAPIAU; ISSN:0021-8979. (American Institute of Physics)Photoluminescence (PL), photoluminescence excitation (PLE), and time-resolved PL spectroscopies have been carried out at room temp. and 86 K on transitions from 5D2, 5D1, and 5D0 excited states to numerous 7FJ ground states of Eu-doped GaN films grown by conventional solid-source mol. beam epitaxy (MBE) and interrupted growth epitaxy MBE. Within the visible spectral range of 1.8-2.7 eV, 42 spectral features were obsd. and assignments were attempted for each transition. PL and PLE indicate that four Eu3+ centers exist in the GaN lattice whose relative concn. can be controlled by the duration of growth interruption. The energy levels for these four sites are self-consistently obtained, and time-resolved photoluminescence measurements reveal details about the radiative and nonradiative relaxations of excitation among these levels. The data indicate a near-resonant cross relaxation among these sites. The 5D2 and 5D1 states are obsd. to decay nonradiatively by filling the 5D0 state with characteristic times of 2.4 and 2.8 μs, resp. The 5D0 state is found to relax in a manner that depends slightly on the final state and dopant site.