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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field-Effect Transistors

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    Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field-Effect Transistors
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    • Filippo Giubileo*
      Filippo Giubileo
      CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      *E-mail: [email protected]. Phone: +39.089.969329 (F.G.).
      More by Filippo Giubileo
    • Laura Iemmo
      Laura Iemmo
      CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      Physics Department, University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      More by Laura Iemmo
    • Maurizio Passacantando
      Maurizio Passacantando
      CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      Department of Physical and Chemical Science, University of L’Aquila, and CNR-SPIN L’Aquila, via Vetoio, L’Aquila 67100, Coppito, Italy
      More by Maurizio Passacantando
      Orcidhttp://orcid.org/0000-0002-3680-5295
    • Francesca Urban
      Francesca Urban
      CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      Physics Department, University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      More by Francesca Urban
    • Giuseppe Luongo
      Giuseppe Luongo
      CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      Physics Department, University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
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    • Linfeng Sun
      Linfeng Sun
      Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
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    • Giampiero Amato
      Giampiero Amato
      Istituto Nazionale di Ricerca Metrologica, INRIM—Strada delle Cacce, Torino 10135, Italy
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    • Emanuele Enrico
      Emanuele Enrico
      Istituto Nazionale di Ricerca Metrologica, INRIM—Strada delle Cacce, Torino 10135, Italy
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    • Antonio Di Bartolomeo*
      Antonio Di Bartolomeo
      CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      Physics Department, University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy
      *E-mail: [email protected]. Phone: +39.089.969189 (A.D.B.).
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      Orcidhttp://orcid.org/0000-0002-3629-726X
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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2019, 123, 2, 1454–1461
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    https://doi.org/10.1021/acs.jpcc.8b09089
    Published December 25, 2018
    Copyright © 2018 American Chemical Society
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    Abstract

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    Electrical characterization of few-layer MoS2-based field-effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron-beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement are observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to 3 orders of magnitudes after the exposure to an irradiation dose of 100 e–/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of ≈20 V/μm with a field enhancement factor of about 500 at an anode–cathode distance of ∼1.5 μm, demonstrates the suitability of few-layer MoS2 as a two-dimensional emitting surface for cold-cathode applications.

    Copyright © 2018 American Chemical Society

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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2019, 123, 2, 1454–1461
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.jpcc.8b09089
    Published December 25, 2018
    Copyright © 2018 American Chemical Society
    Request reuse permissions

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