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Fermiology of Chiral Cadmium Diarsenide CdAs2, a Candidate for Hosting Kramers–Weyl Fermions

  • Federico Mazzola
    Federico Mazzola
    Istituto Officina dei Materiali (IOM)−CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
    Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, I-30172 Venice, Italy
  • Yanxue Zhang
    Yanxue Zhang
    Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China
    More by Yanxue Zhang
  • Natalia Olszowska
    Natalia Olszowska
    National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, PL-30392 Kraków, Poland
  • Marcin Rosmus
    Marcin Rosmus
    National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, PL-30392 Kraków, Poland
  • Gianluca D’Olimpio
    Gianluca D’Olimpio
    Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, I-67100 L’Aquila (AQ), Italy
  • Marian Cosmin Istrate
    Marian Cosmin Istrate
    National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
  • Grazia Giuseppina Politano
    Grazia Giuseppina Politano
    Department of Information Engineering, Infrastructures and Sustainable Energy (DIIES), University “Mediterranea” of Reggio Calabria, Loc. Feo di Vito, I-89122 Reggio Calabria, Italy
  • Ivana Vobornik
    Ivana Vobornik
    Istituto Officina dei Materiali (IOM)−CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, Italy
  • Raman Sankar
    Raman Sankar
    Institute of Physics, Academia Sinica Nankang, Taipei 11529, Taiwan
    More by Raman Sankar
  • Corneliu Ghica
    Corneliu Ghica
    National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
  • Junfeng Gao*
    Junfeng Gao
    Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China
    *[email protected]
    More by Junfeng Gao
  • , and 
  • Antonio Politano*
    Antonio Politano
    Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, I-67100 L’Aquila (AQ), Italy
    *[email protected]
Cite this: J. Phys. Chem. Lett. 2023, 14, 13, 3120–3125
Publication Date (Web):March 23, 2023
https://doi.org/10.1021/acs.jpclett.3c00005

Copyright © 2022 The Authors. Published by American Chemical Society. This publication is licensed under

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Supporting Info (1)»

Abstract

Nonmagnetic chiral crystals are a new class of systems hosting Kramers–Weyl Fermions, arising from the combination of structural chirality, spin–orbit coupling (SOC), and time-reversal symmetry. These materials exhibit nontrivial Fermi surfaces with SOC-induced Chern gaps over a wide energy range, leading to exotic transport and optical properties. In this study, we investigate the electronic structure and transport properties of CdAs2, a newly reported chiral material. We use synchrotron-based angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT) to determine the Fermiology of the (110)-terminated CdAs2 crystal. Our results, together with complementary magnetotransport measurements, suggest that CdAs2 is a promising candidate for novel topological properties protected by the structural chirality of the system. Our work sheds light on the details of the Fermi surface and topology for this chiral quantum material, providing useful information for engineering novel spintronic and optical devices based on quantized chiral charges, negative longitudinal magnetoresistance, and nontrivial Chern numbers.

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Crystal symmetries play a pivotal role in determining the electronic properties of various quantum systems, and their study has garnered substantial interest for both fundamental research and technological applications. (1−9) Crystals exhibiting well-defined handedness, due to the breaking of inversion, mirror, or any other roto-inversion symmetries, are referred to as chiral crystals. (10−12) Even in their nonmagnetic state, these chiral crystals show universal topological electronic properties due to their spin–orbit coupling and crystalline chirality, resulting in the presence of Kramers–Weyl Fermions in their spectrum. (13,14) These Fermions are pinned to Kramers degenerate points, leading to the appearance of topological gaps, which are significantly larger than those observed in Weyl semimetals. (13) Within such gaps, ubiquitous topological properties, such as quantized chiral charges, (15) negative longitudinal magnetoresistance, (16) and nontrivial Chern numbers (17) can arise, opening up exciting avenues for engineering exotic transport phenomena and applications. Furthermore, Kramers–Weyl Fermions differ from conventional Weyl Fermions as they occur at time-reversal invariant points in momentum space. SOC, structural chirality, and time-reversal symmetry combine to produce these unique properties, which can also enable additional exotic phenomena such as magneto-chiral dichroism, (18,19) large optical activity, (20,21) and even the emergence of skyrmions with the lifting of time-reversal symmetry. (22,23) As such, understanding the electronic structure of these compounds is of paramount importance, especially given the evident potential for technological applications in spintronics and optics. (11)
In this study, we investigate the electronic structure of the newly reported (24,25) chiral material CdAs2 using synchrotron-based angle-resolved photoelectron spectroscopy (ARPES), density functional theory (DFT), and transport experiments, shedding light on the details of the Fermi surface and topology for this chiral quantum material. Our findings suggest that CdAs2 is a promising candidate for enabling novel topological properties protected by its structural chirality, offering useful information for the development of disruptive spintronic and optical devices based on quantized chiral charges, negative longitudinal magnetoresistance, and nontrivial Chern numbers.
CdAs2 exhibits trigonal symmetry belonging to the space group n. 98, I4122(see Figure 1). The lattice parameters a = b = 8.152 Å and c = 4.771 Å were determined from our X-ray diffraction (XRD) measurements (Figure 2c). The crystal structure reflects the chirality of the system, with atoms forming spiral chains of covalent As–As and Cd–As bonds (Figure 1a), which influence both the optical and electronic properties.

Figure 1

Figure 1. Crystal structure and electronic band structure of bulk CdAs2. (a) Optimized primitive (left) and conventional (right) unit cells of CdAs2. (b) First Brillouin zone of the primitive cell. (c) Calculated electronic band structure without SOC effects. (d) Calculated electronic band structure including SOC effects. The Fermi level is set to zero and marked by a horizontal red dashed line. Cd and As atoms are represented by yellow and purple balls, respectively. The Kramers–Weyl nodes (d) are marked by yellow circles.

Figure 2

Figure 2. Characterization of the CdAs2 single crystal. (a) High-resolution transmission electron microscopy (HR-TEM) image showing the crystalline structure of CdAs2. (b) Small-area electron diffraction (SAED) pattern confirming the single crystal nature of CdAs2, although the existence of elongated spots is a fingerprint of a slight mosaicity. (c) X-ray diffraction (XRD) pattern revealing the high quality of the crystal with sharp Bragg peaks. (d) Temperature-dependent magnetoresistance curve of CdAs2 single crystal showing a linear dependence at low temperatures and a saturation behavior at high temperatures.

The electronic structure of the bulk, along the high-symmetry directions (for Brillouin zone, BZ, see Figure 1b), shows a small indirect energy gap (∼0.13 eV) as displayed in Figure 1c, indicating the semiconducting nature of the bulk crystal. The inclusion of SOC reduces the gap by approximately 20 meV, as shown in Figure 1d, but the semiconducting character is retained. With the inclusion of SOC, the band structure of CdAs2 displays a 2-fold splitting, whereas in its absence, it exhibits a 2-fold spin degeneracy. However, at time-reversal-invariant-momenta, 2-fold spin degeneracy is retained even in the presence of SOC, which is crucial for the emergence of Kramers–Weyl Fermions. (11,12)
We calculated the Wannier charge centers for six time reversal invariant planes: k1 = (0.0, 0.5), k2 = (0.0, 0.5), k3 = (0.0, 0.5) of primitive CdAs2, as shown in Figure S4 in the Supporting Information. The results indicate that the k2k3 plane and the k1k3 plane have a reverse topological number Z2, i.e., Z2(k1 = 0) = Z2(k2 = 0.5) = 0, Z2(k1 = 0.5) = Z2(k2 = 0.0) = 1. We hypothesized that this may be attributed to the structural chirality of CdAs2. It is worth noting that the surface electronic structure may differ significantly from the bulk. In this study, we examine four possible surface terminations along the (110) plane: As–S1, As–S2, Cd–S1, and Cd–S2 (refer to Figure S1 in the Supporting Information). Using DFT calculations, we found that the As–S1 and Cd–S1 surfaces are notably more stable than the others, without any observed distortions. Conversely, the As–S2 and Cd–S2 surfaces exhibit reconstruction, where the topmost Cd atoms in Cd–S2 sink into the As-sublayer. This behavior is comparable to a self-passivation mechanism reported in three-dimensional Dirac semimetal Cd3As2. (26)
To determine the most realistic configuration for comparison to the experiment, we relaxed the (2 × 1) and (3 × 1) supercells of As–S1, As–S2, Cd–S1, and Cd–S2 terminated (110) surface to simulate their electronic structure (Figure 3). The surface formation energy as a function of the chemical potential of As atoms (μAs) for the four types of surfaces (with a thickness of 17 Å) is illustrated in Figure S2a. The Cd–S1 termination exhibits the lowest surface energy for lower μAs (blue line in Figure S2a in the Supporting Information), following a linear trend. Conversely, the As–S1 termination yields the lowest surface energy in a richer As environment. This trend holds for various thicknesses; the surface energy appears unaffected by slab thickness (refer to Figure S2a–d in the Supporting Information for calculations from 17 to 35 Å). Therefore, we focus on the As–S1 and Cd–S1 surfaces, which exhibit the lowest and most favorable surface energy configurations, in our further analysis of (110)-oriented crystals.

Figure 3

Figure 3. Top (left panel) and side (right panel) view of (2 × 1) (top panel) and (3 × 1) (bottom panel) supercell of (a) As–S1, (b) As–S2, (c) Cd–S1, and (d) Cd–S2, respectively. Lighter colors represent lower atoms for better visualization of surface atoms.

CdAs2 single crystals with (110) orientation were analyzed using high-resolution transmission electron microscopy (HR-TEM, Figure 2a,b). The unit cell parameters, determined to be a = b = 0.795 nm and c = 0.467 nm, were found to be consistent with previous reports (27) and XRD results (Figure 2c). Temperature-dependent magnetoresistance measurements were carried out on the same crystals, revealing a semiconductor-metal transition that is quenched with increasing magnetic field. The data in Figure 2d demonstrate that the semiconducting behavior persists below 150 K and becomes metallic above this threshold. (28) The experimental results support the conclusion that CdAs2 undergoes a transition from semiconductor to metal with increasing temperature.
The electronic structure of CdAs2 was probed using synchrotron-based ARPES. Consistent with the bulk semiconducting nature of the material, the ARPES spectra showed an energy gap separating the valence and conduction bands (Figure 4 and 5). The constant energy maps (Figure 4a–c) revealed a complex Fermiology, particularly for the valence band manifold, with small metallic conduction band pockets comprising the Fermi surface (Figure 4a). The energy-momentum dispersion along high-symmetry directions (Figure 5) indicated the presence of strongly dispersing bands with broad features, suggestive of the three-dimensional nature of the material, which introduces a significant kz contribution in ARPES measurements.

Figure 4

Figure 4. (a) Fermi surface of CdAs2 showing the electron pockets of the conduction band at the Fermi level, covering several Brillouin zones. (b) Constant energy surface at 1 eV and (c) 2.35 eV below the Fermi level illustrating the valence band structure evolution at higher k-values. The measurements were carried out at 40 K using hν = 100 eV photons in horizontal polarization setups. On the constant energy cuts, the projection of the Wigner–Seitz cells were overlaid and high-symmetry points were marked.

Figure 5

Figure 5. Experimental band structure of bulk CdAs2 along various high-symmetry directions. (a) ARPES repeated along the X–M–X path, showing a large view of the valence band structure. (b) Second derivative plot to aid the visualization of the states. (c) Zoomed-in view of part a near the Fermi level, highlighting the pockets belonging to the conduction band manifold. (d) ARPES valence band structure measured along the Z–M–Z path (negative kx values). (e) Corresponding second derivative plot. The Z–M–Z path was also collected at positive kx values and shown in part f along with the (g) second derivative. The valence band was also measured along the (h, i) P–X–P path and (j, k) Z–P direction.

DFT calculations predicted the presence of metallic in-gap surface states that cross the Fermi level for the most stable As-terminated surface, where the presence of dangling bonds is expected to generate these states. Band structures were calculated for As–S1 (110) and Cd–S1 (110) surfaces with thicknesses of 17–35 Å (Figure S3 in the Supporting Information), revealing that the surface states of As–S1 (110) and Cd–S1 (110) surfaces are metallic and cross the Fermi energy level (Figure S5 in the Supporting Information). The As–S1 (110) surface showed decreasing conduction bands at the Γ point as thickness increased from 17 to 35 Å, while the conduction band at Γ from the topmost As atoms of As–S1 (110) surface decreased from 0.43 to 0.34 eV. The Cd–S1 (110) surface, on the other hand, showed surface states that crossed the Fermi energy level regardless of the slab thickness, indicating that the Cd–S1 surface is more active and less stable than the As–S1 surface. To further investigate the surface state of As–S1 and Cd–S1 (110) surfaces, Wannier90 code (29) and Wannier Tools (30) package were used (Figure S4 in the Supporting Information). A tight-binding model generated by Wannier90 code confirmed that the surface state of As–S1 (110) surface slightly crosses the Fermi energy level in the direction of Γ to X, while the Cd–S1 (110) surface has several surface states crossing the Fermi energy level.
Although the identification of surface states in ARPES spectra was challenging due to their broad and intense spectral features, derivative plots of the bands (Figure 5) facilitated a more detailed comparison between theory and experiment, revealing additional dispersing features in the gap region, potentially attributed to the surface states. The comparison of theoretical band structure in Figure 1d with the experimental results in Figure 5 showed a maximum of the valence band at the M point, where Kramers–Weyl Fermions are imposed by the T symmetry.
The chirality and lack of mirror (inversion) symmetry in CdAs2 are of great significance, as they give rise to topological gaps that are much larger than those found in conventional Weyl semimetals. These gaps are clearly evident in our ARPES experiment and make CdAs2 an ideal platform for studying a range of unique phenomena. Notably, the topological properties of this material enable the existence of Kramers–Weyl Fermions, which have been suggested as promising candidates for developing novel spin-torque devices and quantum solenoids. (31)
In summary, our study has provided a comprehensive investigation of the electronic properties of CdAs2. Our results demonstrate that CdAs2 is a semiconducting chiral material with a small gap that can be overcome by thermal activation, leading to a semiconducting-metal transition. We found that the topological properties of this material are mediated by SOC, although it has a minor effect in reducing the gap size. Furthermore, we showed that the presence of metallic states on the material’s surface is crucial in enabling additional metallic states. Although identifying these surface states by ARPES is complicated due to the broadening of the spectra, our experimental results are consistent with our theoretical model.
Our findings have significant implications for the development of optical and spintronic devices based on quantized chiral charges, negative longitudinal magnetoresistance, and nontrivial Chern numbers associated with this chiral quantum material and its Kramers–Weyl Fermions.

Methods

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Theory. First-principles calculations were performed by using the Vienna ab initio simulation package (VASP). (32) The exchange-correlation interaction was described using the Perdew–Burke–Ernzerhof (PBE) functional (33) in the generalized gradient approximation (GGA), with core electrons described by the Projector-augmented wave (PAW) technology. (34) A plane-wave basis kinetic energy cutoff of 500 eV and a convergence criterion of 10–5 eV were used in the calculations. All configurations were fully relaxed until the force was lower than 0.02 eV/Å, with a k-point sampling of 0.02 1/Å used for structural relaxation.
Crystal Growth. CdAs2 single crystals were grown by the Chemical Vapor Transport (CVT) method, using Cd metal chunks (purity 99.99%), As chunks (purity 99.999%), and I2 transport agent (purity 99.999% analytical grade) purchased from Alfa Aesar Chemical in a weight ratio of 43:57. The growth process was carried out in a carbon-coated quartz tube, sealed under an Ar gas atmosphere using a glovebox. A horizontal two-zone furnace with programmable temperature and time was used to maintain the furnace hot and cold zones at 600 and 550 °C, respectively, for 2 weeks. The grown crystals were collected, washed in a glovebox to protect them from surface oxidation, and further washed with ethanol to remove any surface contamination from I2.
TEM. HR-TEM investigation of the grain surface was performed on crystal grains hanging freely in carbon membrane holes with no support underneath. We selected grains tilted to the nearest available zone axis orientation, as shown in the selected area electron diffraction (SAED) patterns in Figure 2b. HR-TEM micrographs were acquired from the thinnest regions at the grain border.
ARPES. ARPES measurements were carried out at the National Synchrotron Radiation Centre SOLARIS in Cracow, Poland, using the variable polarization and high-resolution URANOS beamline depicted in Figure S6 in the Supporting Information. Samples were glued with epoxy resin to a sample holder and cleaved in an ultrahigh vacuum by a metal post. The experiment was conducted using a quasiperiodic elliptically polarizing undulator APPLE II type as a photon source. Experimental data were collected by a VGScienta DA30L electron spectrometer, with an energy and angle resolution better than 3 meV and 0.1°, respectively. Data measurements were performed at T = 40 K and for an energy range from 20 to 140 eV. The spot size on the sample was 250 × 250 μm.
Transport Experiments. The temperature-dependent transport properties were investigated using a 4-probe measurement with the magnetic field varying from 0 to 2 T in a Quantum Design (QD) based Physical Property Measurement System (PPMS).

Supporting Information

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The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.jpclett.3c00005.

  • Further information on the theoretical model and geometry of ARPES experiments (PDF)

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Author Information

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  • Corresponding Authors
  • Authors
    • Federico Mazzola - Istituto Officina dei Materiali (IOM)−CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, ItalyDepartment of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, I-30172 Venice, Italy
    • Yanxue Zhang - Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, School of Physics, Dalian University of Technology, Dalian 116024, China
    • Natalia Olszowska - National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, PL-30392 Kraków, Poland
    • Marcin Rosmus - National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, PL-30392 Kraków, PolandOrcidhttps://orcid.org/0000-0002-4314-9601
    • Gianluca D’Olimpio - Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, I-67100 L’Aquila (AQ), ItalyOrcidhttps://orcid.org/0000-0002-6367-3945
    • Marian Cosmin Istrate - National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania
    • Grazia Giuseppina Politano - Department of Information Engineering, Infrastructures and Sustainable Energy (DIIES), University “Mediterranea” of Reggio Calabria, Loc. Feo di Vito, I-89122 Reggio Calabria, Italy
    • Ivana Vobornik - Istituto Officina dei Materiali (IOM)−CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, I-34149 Trieste, ItalyOrcidhttps://orcid.org/0000-0001-9957-3535
    • Raman Sankar - Institute of Physics, Academia Sinica Nankang, Taipei 11529, TaiwanOrcidhttps://orcid.org/0000-0003-4702-2517
    • Corneliu Ghica - National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, RomaniaOrcidhttps://orcid.org/0000-0001-7110-1544
  • Author Contributions

    F.M., Y.Z., N.O., and M.R. contributed equally.

  • Notes
    The authors declare no competing financial interest.

Acknowledgments

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This work was supported by the National Natural Science Foundation of China (Grant No. 12074053, 91961204, 12004064), and National Foreign Expert Project (G2022127004L). A.P. thanks CERIC-ERIC for the access to the TEM facility. M.C.I. and C.G. acknowledge funding through contract POC 332/390008/29.12.2020-SMIS 109522. R.S. acknowledges the financial support provided by the Ministry of Science and Technology in Taiwan under project numbers NSC-111-2124-M-001-009; NSC-110-2112-M-001-065-MY3; AS-iMATE-111-12.

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  • Abstract

    Figure 1

    Figure 1. Crystal structure and electronic band structure of bulk CdAs2. (a) Optimized primitive (left) and conventional (right) unit cells of CdAs2. (b) First Brillouin zone of the primitive cell. (c) Calculated electronic band structure without SOC effects. (d) Calculated electronic band structure including SOC effects. The Fermi level is set to zero and marked by a horizontal red dashed line. Cd and As atoms are represented by yellow and purple balls, respectively. The Kramers–Weyl nodes (d) are marked by yellow circles.

    Figure 2

    Figure 2. Characterization of the CdAs2 single crystal. (a) High-resolution transmission electron microscopy (HR-TEM) image showing the crystalline structure of CdAs2. (b) Small-area electron diffraction (SAED) pattern confirming the single crystal nature of CdAs2, although the existence of elongated spots is a fingerprint of a slight mosaicity. (c) X-ray diffraction (XRD) pattern revealing the high quality of the crystal with sharp Bragg peaks. (d) Temperature-dependent magnetoresistance curve of CdAs2 single crystal showing a linear dependence at low temperatures and a saturation behavior at high temperatures.

    Figure 3

    Figure 3. Top (left panel) and side (right panel) view of (2 × 1) (top panel) and (3 × 1) (bottom panel) supercell of (a) As–S1, (b) As–S2, (c) Cd–S1, and (d) Cd–S2, respectively. Lighter colors represent lower atoms for better visualization of surface atoms.

    Figure 4

    Figure 4. (a) Fermi surface of CdAs2 showing the electron pockets of the conduction band at the Fermi level, covering several Brillouin zones. (b) Constant energy surface at 1 eV and (c) 2.35 eV below the Fermi level illustrating the valence band structure evolution at higher k-values. The measurements were carried out at 40 K using hν = 100 eV photons in horizontal polarization setups. On the constant energy cuts, the projection of the Wigner–Seitz cells were overlaid and high-symmetry points were marked.

    Figure 5

    Figure 5. Experimental band structure of bulk CdAs2 along various high-symmetry directions. (a) ARPES repeated along the X–M–X path, showing a large view of the valence band structure. (b) Second derivative plot to aid the visualization of the states. (c) Zoomed-in view of part a near the Fermi level, highlighting the pockets belonging to the conduction band manifold. (d) ARPES valence band structure measured along the Z–M–Z path (negative kx values). (e) Corresponding second derivative plot. The Z–M–Z path was also collected at positive kx values and shown in part f along with the (g) second derivative. The valence band was also measured along the (h, i) P–X–P path and (j, k) Z–P direction.

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