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Increased Carrier Mobility and Lifetime in CdSe Quantum Dot Thin Films through Surface Trap Passivation and Doping

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    Increased Carrier Mobility and Lifetime in CdSe Quantum Dot Thin Films through Surface Trap Passivation and Doping
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    † ‡ § †Department of Chemistry, ‡Department of Materials Science and Engineering, and §Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
    ∥ National Institute of Standards and Technology, Gaithersburg, Maryland 20899-1070, United States
    *E-mail: [email protected]
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    The Journal of Physical Chemistry Letters

    Cite this: J. Phys. Chem. Lett. 2015, 6, 22, 4605–4609
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    https://doi.org/10.1021/acs.jpclett.5b02251
    Published November 4, 2015
    Copyright © 2015 American Chemical Society
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    Abstract

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    Passivating surface defects and controlling the carrier concentration and mobility in quantum dot (QD) thin films is prerequisite to designing electronic and optoelectronic devices. We investigate the effect of introducing indium in CdSe QD thin films on the dark mobility and the photogenerated carrier mobility and lifetime using field-effect transistor (FET) and time-resolved microwave conductivity (TRMC) measurements. We evaporate indium films ranging from 1 to 11 nm in thickness on top of approximately 40 nm thick thiocyanate-capped CdSe QD thin films and anneal the QD films at 300 °C to densify and drive diffusion of indium through the films. As the amount of indium increases, the FET and TRMC mobilities and the TRMC lifetime increase. The increase in mobility and lifetime is consistent with increased indium passivating midgap and band-tail trap states and doping the films, shifting the Fermi energy closer to and into the conduction band.

    Copyright © 2015 American Chemical Society

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.jpclett.5b02251.

    • Synthetic methods and characterization of QDs, additional FET data, representative TRMC transients, TRMC mobility versus photoexcitation density, and TRMC signal processing details (PDF)

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    The Journal of Physical Chemistry Letters

    Cite this: J. Phys. Chem. Lett. 2015, 6, 22, 4605–4609
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.jpclett.5b02251
    Published November 4, 2015
    Copyright © 2015 American Chemical Society
    Request reuse permissions

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