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Reconfigurable Al2O3-Based Memristor for All-in-One Artificial Synapse and Nociceptor Neurons
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    Physical Insights into Materials and Molecular Properties

    Reconfigurable Al2O3-Based Memristor for All-in-One Artificial Synapse and Nociceptor Neurons
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    • Hongshun Du
      Hongshun Du
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by Hongshun Du
    • Fang Wang
      Fang Wang
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by Fang Wang
    • ZeWen Li
      ZeWen Li
      School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by ZeWen Li
    • Song Li
      Song Li
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by Song Li
    • Yu Luo
      Yu Luo
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by Yu Luo
    • XingBo Chen
      XingBo Chen
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by XingBo Chen
    • Lei Zheng
      Lei Zheng
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by Lei Zheng
    • Yemei Han
      Yemei Han
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      More by Yemei Han
    • Yan Cheng
      Yan Cheng
      Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, East China Normal University, Shanghai 200241, China
      More by Yan Cheng
    • Qing Luo
      Qing Luo
      State Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    • Kailiang Zhang*
      Kailiang Zhang
      School of Intergrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China
      *E-mail: [email protected]
    Other Access OptionsSupporting Information (1)

    The Journal of Physical Chemistry Letters

    Cite this: J. Phys. Chem. Lett. 2025, 16, 11, 2722–2730
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    https://doi.org/10.1021/acs.jpclett.5c00184
    Published March 6, 2025
    Copyright © 2025 American Chemical Society

    Abstract

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    Multifunctional bionic devices have widespread applications in neuromorphic computing, intelligent sensors, and robotics. The inherent properties of memristors make them suitable for these emerging applications, but different applications require either volatile or nonvolatile operations in a unique device. In this work, we have developed a novel reconfigurable Ag/Al2O3/ITO memristor, which achieves adjustable switching behavior between volatile switching and nonvolatile switching by modulating the compliance current. A proposed mechanism controls the state of the conductive filaments in the device by adjusting compliance current, elucidating the adjustable switching process between volatile and nonvolatile states. Additionally, the synaptic functionality and nociceptor characteristics, including threshold, relaxation, inadaptation, and sensitization, have been successfully simulated. This integration of artificial synaptic and nociceptor functions into a single device is achieved, with the single-pulse power consumption of the nociceptor reaching as low as 0.912 nJ when the threshold is reached. These results provide insights into the construction of multifunctional bionic devices and demonstrate significant potential for future neuromorphic network applications.

    Copyright © 2025 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.jpclett.5c00184.

    • XPS survey scan of Al2O3 thin film, Voltage–current characteristics of Ag/Al2O3/ITO memristors prepared from alumina films with stoichiometric ratios, forming characteristic of the Ag/Al2O3/ITO memristor, excitation pulse settings for device states with different compliance current, The figure of the single pulse data when the device attains the threshold of the nociceptor (PDF)

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    The Journal of Physical Chemistry Letters

    Cite this: J. Phys. Chem. Lett. 2025, 16, 11, 2722–2730
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.jpclett.5c00184
    Published March 6, 2025
    Copyright © 2025 American Chemical Society

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