High-Performance Ultra-Short Channel Field-Effect Transistor Using Solution-Processable Colloidal NanocrystalsClick to copy article linkArticle link copied!
- Xuelin Fan
- David KneppeDavid KneppeDresden Integrated Center for Applied Photophysics and Photonic Materials, TU Dresden, Nöthnitzer Strasse 61, 01187 Dresden, GermanyMore by David Kneppe
- Vladimir SayevichVladimir SayevichPhysical Chemistry, TU Dresden, Bergstrasse 66b, 01062 Dresden, GermanyMore by Vladimir Sayevich
- Hans Kleemann*Hans Kleemann*E-mail: [email protected]Dresden Integrated Center for Applied Photophysics and Photonic Materials, TU Dresden, Nöthnitzer Strasse 61, 01187 Dresden, GermanyMore by Hans Kleemann
- Alexander TahnAlexander TahnDresden Center for Nanoanalysis, TU Dresden, Helmholtzstrasse 18, 01069 Dresden, GermanyMore by Alexander Tahn
- Karl LeoKarl LeoDresden Integrated Center for Applied Photophysics and Photonic Materials, TU Dresden, Nöthnitzer Strasse 61, 01187 Dresden, GermanyMore by Karl Leo
- Vladimir Lesnyak*Vladimir Lesnyak*E-mail: [email protected]Physical Chemistry, TU Dresden, Bergstrasse 66b, 01062 Dresden, GermanyMore by Vladimir Lesnyak
- Alexander EychmüllerAlexander EychmüllerPhysical Chemistry, TU Dresden, Bergstrasse 66b, 01062 Dresden, GermanyMore by Alexander Eychmüller
Abstract
We demonstrate high-mobility solution-processed inorganic field-effect transistors (FETs) with ultra-short channel (USC) length using semiconductor CdSe nanocrystals (NCs). Capping of the NCs with hybrid inorganic–organic CdCl3––butylamine ligands enables coarsening of the NCs during annealing at a moderate temperature, resulting in the devices having good transport characteristics with electron mobilities in the saturation regime reaching 8 cm2 V–1 s–1. Solution-based processing of the NCs and fabrication of thin films involve neither harsh conditions nor the use of hydrazine. Employing photolithographic methods, we fabricated FETs with a vertical overlap of source and drain electrodes to achieve a submicrometer channel length. To the best of our knowledge, this is the first report on an USC FET based on colloidal semiconductor NCs. Because of a short channel length, the FETs show a normalized transconductance of 4.2 m V–1 s–1 with a high on/off ratio of 105.
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