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High-Performance Field-Effect Transistors Fabricated with Donor–Acceptor Copolymers Containing S···O Conformational Locks Supplied by Diethoxydithiophenethenes

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Institute of Chemistry, Beijing National Laboratory for Molecular Sciences, Chinese Academy of Sciences, Beijing 100190, P. R. China
*E-mail: [email protected] (G.Y.).
Cite this: Macromolecules 2016, 49, 17, 6401–6410
Publication Date (Web):September 1, 2016
https://doi.org/10.1021/acs.macromol.6b01510
Copyright © 2016 American Chemical Society
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Abstract

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Constructing planar π-conjugated backbone is of critical importance for polymeric semiconductors to obtain high charge carrier mobility. In this regard, suitable introduction of noncovalent interactions is one of useful approaches. Herein, we report a series of donor–acceptor copolymers based on diethoxydithiophenethene (EDTE), namely PEDTEn (n = 1, 2, and 3), containing multiple O···H–C and S···O conformational locks, where the latter ones are supplied by the EDTE units. PEDTEn owns planar conjugated backbones with suitable HOMO energy levels (ca. – 5.20 eV) and strong absorption behaviors along with enhanced solution processability. High-performance field-effect transistors based on the copolymers exhibited a high hole mobility of up to 5.37 cm2 V–1 s–1, which is among the highest values of semiconducting polymers based on the concept of conformational locks. AFM and GIXRD experiments reveal that PEDTEn could form crystalline and close packing thin films with a π–π stacking distance of down to 3.78 Å.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.macromol.6b01510.

  • TGA traces, optimized structures of the DPP–EDTE and DPP–DTE repeat units, CV traces of PEDTEn, output and transfer plots of PEDTE1, mobility data, NMR spectra of EDTE-based intermediates 3 and 4 and the copolymers, and AFM and GIXRD images of the PEDTEn as-spun films (PDF)

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