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Low-Voltage Domain-Wall LiNbO3 Memristors

  • P. Chaudhary
    P. Chaudhary
    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
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  • , 
  • H. Lu
    H. Lu
    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
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  • , 
  • A. Lipatov
    A. Lipatov
    Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States
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    Orcidhttp://orcid.org/0000-0001-5043-1616
  • , 
  • Z. Ahmadi
    Z. Ahmadi
    Department of Mechanical & Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
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  • , 
  • J. P. V. McConville
    J. P. V. McConville
    Centre for Nanostructured Media, School of Mathematics and Physics, Queen’s University Belfast, Belfast BT7 1NN, U.K.
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  • , 
  • A. Sokolov
    A. Sokolov
    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
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  • , 
  • J. E. Shield
    J. E. Shield
    Department of Mechanical & Materials Engineering, University of Nebraska, Lincoln, Nebraska 68588, United States
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  • , 
  • A. Sinitskii
    A. Sinitskii
    Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States
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    Orcidhttp://orcid.org/0000-0002-8688-3451
  • , 
  • J. M. Gregg
    J. M. Gregg
    Centre for Nanostructured Media, School of Mathematics and Physics, Queen’s University Belfast, Belfast BT7 1NN, U.K.
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    Orcidhttp://orcid.org/0000-0002-6451-7768
  • , and 
  • A. Gruverman*
    A. Gruverman
    Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, United States
    *Email: [email protected]
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    Orcidhttp://orcid.org/0000-0003-0492-2750
Cite this: Nano Lett. 2020, 20, 8, 5873–5878
Publication Date (Web):June 23, 2020
https://doi.org/10.1021/acs.nanolett.0c01836
Copyright © 2020 American Chemical Society
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    Abstract

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    Application of conducting ferroelectric domain walls (DWs) as functional elements may facilitate development of conceptually new resistive switching devices. In a conventional approach, several orders of magnitude change in resistance can be achieved by controlling the DW density using supercoercive voltage. However, a deleterious characteristic of this approach is high-energy cost of polarization reversal due to high leakage current. Here, we demonstrate a new approach based on tuning the conductivity of DWs themselves rather than on domain rearrangement. Using LiNbO3 capacitors with graphene, we show that resistance of a device set to a polydomain state can be continuously tuned by application of subcoercive voltage. The tuning mechanism is based on the reversible transition between the conducting and insulating states of DWs. The developed approach allows an energy-efficient control of resistance without the need for domain structure modification. The developed memristive devices are promising for multilevel memories and neuromorphic computing applications.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.0c01836.

    • Figure S1, AFM topographic images; Figure S2, PFM images; and Figure S3, time dependence of conductance of polydomain graphene/LNO/Pt capacitor (PDF)

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