Replacing Metals with Oxides in Metal-Assisted Chemical Etching Enables Direct Fabrication of Silicon Nanowires by Solution Processing
- Maxime GayrardMaxime GayrardLaboratoire Chimie de la Matière Condensée de Paris (LCMCP), Collège de France, CNRS, Sorbonne Université, F-75005 Paris, FranceMore by Maxime Gayrard
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- Justine VoronkoffJustine VoronkoffLaboratoire Chimie de la Matière Condensée de Paris (LCMCP), Collège de France, CNRS, Sorbonne Université, F-75005 Paris, FranceMore by Justine Voronkoff
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- Cédric BoissièreCédric BoissièreLaboratoire Chimie de la Matière Condensée de Paris (LCMCP), Collège de France, CNRS, Sorbonne Université, F-75005 Paris, FranceMore by Cédric Boissière
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- David MonteroDavid MonteroInstitut des Matériaux de Paris Centre (IMPC FR 2482), Sorbonne Université, UFR de Chimie Campus Jussieu, 75252 Paris, FranceMore by David Montero
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- Laurence RozesLaurence RozesLaboratoire Chimie de la Matière Condensée de Paris (LCMCP), Collège de France, CNRS, Sorbonne Université, F-75005 Paris, FranceMore by Laurence Rozes
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- Andrea CattoniAndrea CattoniCentre de Nanosciences et de Nanotechnologies (C2N), CNRS UMR 9001, Université Paris-Saclay, 91120 Palaiseau, FranceMore by Andrea Cattoni
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- Jennifer PeronJennifer PeronITODYS, CNRS, UMR 7086, Université de Paris, 15 Rue J-A de Baïf, F-75013 Paris, FranceMore by Jennifer Peron
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- Marco Faustini*Marco Faustini*E-mail: [email protected]Laboratoire Chimie de la Matière Condensée de Paris (LCMCP), Collège de France, CNRS, Sorbonne Université, F-75005 Paris, FranceMore by Marco Faustini
Abstract
Metal-assisted chemical etching (MACE) has emerged as an effective method to fabricate high aspect ratio nanostructures. This method requires a catalytic mask that is generally composed of a metal. Here, we challenge the general view that the catalyst needs to be a metal by introducing oxide-assisted chemical etching (OACE). We perform etching with metal oxides such as RuO2 and IrO2 by transposing materials used in electrocatalysis to nanofabrication. These oxides can be solution-processed as polymers exhibiting similar capabilities of metals for MACE. Nanopatterned oxides can be obtained by direct nanoimprint lithography or block-copolymer lithography from chemical solution on a large scale. High aspect ratio silicon nanostructures were obtained at the sub-20 nm scale exclusively by cost-effective solution processing by halving the number of fabrication steps compared to MACE. In general, OACE is expected to stimulate new fundamental research on chemical etching assisted by other materials, providing new possibilities for device fabrication.
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