The Effect of Photoinduced Surface Oxygen Vacancies on the Charge Carrier Dynamics in TiO2 FilmsClick to copy article linkArticle link copied!
- Omur E. Dagdeviren*Omur E. Dagdeviren*[email protected]Department of Mechanical Engineering, École de technologie supérieure, University of Quebec, Montreal H3C 1K3, Quebec, CanadaMore by Omur E. Dagdeviren
- Daniel GlassDaniel GlassThe Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K.Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.More by Daniel Glass
- Riccardo SapienzaRiccardo SapienzaThe Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K.More by Riccardo Sapienza
- Emiliano CortésEmiliano CortésChair in Hybrid Nanosystems, Faculty of Physics, Ludwig Maximilians Universität München, München 80539, GermanyMore by Emiliano Cortés
- Stefan A. MaierStefan A. MaierThe Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, U.K.Chair in Hybrid Nanosystems, Faculty of Physics, Ludwig Maximilians Universität München, München 80539, GermanyMore by Stefan A. Maier
- Ivan. P. ParkinIvan. P. ParkinDepartment of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.More by Ivan. P. Parkin
- Peter GrütterPeter GrütterDepartment of Physics, McGill University, Montreal H3A 2T8, Quebec, CanadaMore by Peter Grütter
- Raul Quesada-Cabrera*Raul Quesada-Cabrera*[email protected]Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.Fotoelectrocatálisis para Aplicaciones Medioambientales, Departamento de Química, Universidad de Las Palmas de Gran Canaria, Edificio Polivalente I, Campus de Tafira, Las Palmas de Gran Canaria 35017, SpainMore by Raul Quesada-Cabrera
Abstract

Metal-oxide semiconductors (MOS) are widely utilized for catalytic and photocatalytic applications in which the dynamics of charged carriers (e.g., electrons, holes) play important roles. Under operation conditions, photoinduced surface oxygen vacancies (PI-SOV) can greatly impact the dynamics of charge carriers. However, current knowledge regarding the effect of PI-SOV on the dynamics of hole migration in MOS films, such as titanium dioxide, is solely based upon volume-averaged measurements and/or vacuum conditions. This limits the basic understanding of hole-vacancy interactions, as they are not capable of revealing time-resolved variations during operation. Here, we measured the effect of PI-SOV on the dynamics of hole migration using time-resolved atomic force microscopy. Our findings demonstrate that the time constant associated with hole migration is strongly affected by PI-SOV, in a reversible manner. These results will nucleate an insightful understanding of the physics of hole dynamics and thus enable emerging technologies, facilitated by engineering hole-vacancy interactions.
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