Ultrasharp Lateral p–n Junctions in Modulation-Doped Graphene
- Jesse BalgleyJesse BalgleyDepartment of Physics, Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, United StatesMore by Jesse Balgley
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- Jackson ButlerJackson ButlerDepartment of Physics, Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, United StatesMore by Jackson Butler
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- Sananda BiswasSananda BiswasInstitut für Theoretische Physik, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, GermanyMore by Sananda Biswas
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- Zhehao GeZhehao GePhysics Department, UC Santa Cruz, 1156 High Street, Santa Cruz, California 95064, United StatesMore by Zhehao Ge
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- Samuel LagasseSamuel LagasseElectronics Science and Technology Division, United States Naval Research Laboratory, Washington, D.C. 20375, United StatesMore by Samuel Lagasse
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- Takashi TaniguchiTakashi TaniguchiInternational Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, JapanMore by Takashi Taniguchi
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- Kenji WatanabeKenji WatanabeResearch Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, JapanMore by Kenji Watanabe
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- Matthew CothrineMatthew CothrineMaterial Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesMore by Matthew Cothrine
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- David G. MandrusDavid G. MandrusMaterial Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United StatesDepartment of Material Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United StatesMore by David G. Mandrus
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- Jairo Velasco Jr.Jairo Velasco, Jr.Physics Department, UC Santa Cruz, 1156 High Street, Santa Cruz, California 95064, United StatesMore by Jairo Velasco, Jr.
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- Roser ValentíRoser ValentíInstitut für Theoretische Physik, Goethe-Universität Frankfurt, 60438 Frankfurt am Main, GermanyMore by Roser Valentí
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- Erik A. Henriksen*Erik A. Henriksen*Email for E.A.H.: [email protected]Department of Physics, Washington University in St. Louis, 1 Brookings Drive, St. Louis, Missouri 63130, United StatesMore by Erik A. Henriksen
Abstract
We demonstrate ultrasharp (≲10 nm) lateral p–n junctions in graphene using electronic transport, scanning tunneling microscopy, and first-principles calculations. The p–n junction lies at the boundary between differentially doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of α-RuCl3 across a thin insulating barrier. We extract the p–n junction contribution to the device resistance to place bounds on the junction width. We achieve an ultrasharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of α-RuCl3 located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and α-RuCl3 shows potential variations on a sub 10 nm length scale. First-principles calculations reveal that the charge-doping of graphene decays sharply over just nanometers from the edge of the α-RuCl3 flake.
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