Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced JunctionsClick to copy article linkArticle link copied!
- Dmitry A. Mylnikov*Dmitry A. Mylnikov*Email: [email protected]Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaMore by Dmitry A. Mylnikov
- Elena I. TitovaElena I. TitovaCenter for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaProgrammable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, RussiaMore by Elena I. Titova
- Mikhail A. KashchenkoMikhail A. KashchenkoProgrammable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, RussiaCenter for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaMore by Mikhail A. Kashchenko
- Ilya V. SafonovIlya V. SafonovCenter for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaProgrammable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, RussiaMore by Ilya V. Safonov
- Sergey S. ZhukovSergey S. ZhukovCenter for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaMore by Sergey S. Zhukov
- Valentin A. SemkinValentin A. SemkinCenter for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaMore by Valentin A. Semkin
- Kostya S. NovoselovKostya S. NovoselovInstitute for Functional Intelligent Materials, National University of Singapore, Singapore117575, SingaporeProgrammable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, RussiaMore by Kostya S. Novoselov
- Denis A. BandurinDenis A. BandurinDepartment of Materials Science and Engineering, National University of Singapore, Singapore117575, SingaporeMore by Denis A. Bandurin
- Dmitry A. SvintsovDmitry A. SvintsovCenter for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, RussiaMore by Dmitry A. Svintsov
Abstract
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials having been studied both theoretically and experimentally, the same is not true for 2d p–n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically induced p–n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient, and photoresistivity at cryogenic temperatures T ∼ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps of ∼10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intraband thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
Cited By
This article is cited by 2 publications.
- Valentin A. Semkin, Aleksandr V. Shabanov, Dmitry A. Mylnikov, Mikhail A. Kashchenko, Ivan K. Domaratskiy, Sergey S. Zhukov, Dmitry A. Svintsov. Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts. Nano Letters 2023, 23
(11)
, 5250-5256. https://doi.org/10.1021/acs.nanolett.3c01259
- Elena Titova, Dmitry Mylnikov, Mikhail Kashchenko, Ilya Safonov, Sergey Zhukov, Kirill Dzhikirba, Kostya S. Novoselov, Denis A. Bandurin, Georgy Alymov, Dmitry Svintsov. Ultralow-noise Terahertz Detection by p–n Junctions in Gapped Bilayer Graphene. ACS Nano 2023, 17
(9)
, 8223-8232. https://doi.org/10.1021/acsnano.2c12285
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