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Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions
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    Terahertz Photoconductivity in Bilayer Graphene Transistors: Evidence for Tunneling at Gate-Induced Junctions
    Click to copy article linkArticle link copied!

    • Dmitry A. Mylnikov*
      Dmitry A. Mylnikov
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
      *Email: [email protected]
    • Elena I. Titova
      Elena I. Titova
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
      Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, Russia
    • Mikhail A. Kashchenko
      Mikhail A. Kashchenko
      Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, Russia
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
    • Ilya V. Safonov
      Ilya V. Safonov
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
      Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, Russia
    • Sergey S. Zhukov
      Sergey S. Zhukov
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
    • Valentin A. Semkin
      Valentin A. Semkin
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
    • Kostya S. Novoselov
      Kostya S. Novoselov
      Institute for Functional Intelligent Materials, National University of Singapore, Singapore117575, Singapore
      Programmable Functional Materials Lab, Brain and Consciousness Research Center, Moscow121205, Russia
    • Denis A. Bandurin
      Denis A. Bandurin
      Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore
    • Dmitry A. Svintsov
      Dmitry A. Svintsov
      Center for Photonics and 2D Materials, Moscow Institute of Physics and Technology, Dolgoprudny141700, Russia
    Other Access OptionsSupporting Information (1)

    Nano Letters

    Cite this: Nano Lett. 2023, 23, 1, 220–226
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    https://doi.org/10.1021/acs.nanolett.2c04119
    Published December 22, 2022
    Copyright © 2022 American Chemical Society

    Abstract

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    Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials having been studied both theoretically and experimentally, the same is not true for 2d p–n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically induced p–n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient, and photoresistivity at cryogenic temperatures T ∼ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps of ∼10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intraband thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.

    Copyright © 2022 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.2c04119.

    • (I) Device fabrication, (II) carrier concentration and bandgap in BLG, (III) carrier mobility extraction, (IV) device behavior under inverted back gate, (V) NEP calculation, and (VI) calculation of the junction tunneling resistance (PDF)

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    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!

    This article is cited by 2 publications.

    1. Valentin A. Semkin, Aleksandr V. Shabanov, Dmitry A. Mylnikov, Mikhail A. Kashchenko, Ivan K. Domaratskiy, Sergey S. Zhukov, Dmitry A. Svintsov. Zero-Bias Photodetection in 2D Materials via Geometric Design of Contacts. Nano Letters 2023, 23 (11) , 5250-5256. https://doi.org/10.1021/acs.nanolett.3c01259
    2. Elena Titova, Dmitry Mylnikov, Mikhail Kashchenko, Ilya Safonov, Sergey Zhukov, Kirill Dzhikirba, Kostya S. Novoselov, Denis A. Bandurin, Georgy Alymov, Dmitry Svintsov. Ultralow-noise Terahertz Detection by p–n Junctions in Gapped Bilayer Graphene. ACS Nano 2023, 17 (9) , 8223-8232. https://doi.org/10.1021/acsnano.2c12285

    Nano Letters

    Cite this: Nano Lett. 2023, 23, 1, 220–226
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.2c04119
    Published December 22, 2022
    Copyright © 2022 American Chemical Society

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