Gate-Tunable Bound Exciton Manifolds in Monolayer MoSe2Click to copy article linkArticle link copied!
- Yuan ChenYuan ChenDepartment of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, SingaporeMore by Yuan Chen
- Haidong LiangHaidong LiangCentre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542, SingaporeDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, SingaporeMore by Haidong Liang
- Leyi LohLeyi LohDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, SingaporeDepartment of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, SingaporeMore by Leyi Loh
- Yiwei HoYiwei HoDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, SingaporeMore by Yiwei Ho
- Ivan VerzhbitskiyIvan VerzhbitskiyDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, SingaporeMore by Ivan Verzhbitskiy
- Kenji WatanabeKenji WatanabeResearch Centre for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, JapanMore by Kenji Watanabe
- Takashi TaniguchiTakashi TaniguchiInternational Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, JapanMore by Takashi Taniguchi
- Michel BosmanMichel BosmanDepartment of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, SingaporeInstitute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, SingaporeMore by Michel Bosman
- Andrew A. BettiolAndrew A. BettiolCentre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542, SingaporeDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, SingaporeMore by Andrew A. Bettiol
- Goki Eda*Goki Eda*Email for G.E.: [email protected]).Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, SingaporeDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, SingaporeCentre for Advanced 2D Materials, National University of Singapore, 117542, Singapore, SingaporeMore by Goki Eda
Abstract
Two-dimensional (2D) semiconductors with point defects are predicted to host a variety of bound exciton complexes analogous to trions and biexcitons due to strong many-body effects. However, despite the common observation of defect-mediated subgap emission, the existence of such complexes remains elusive. Here, we report the observation of bound exciton (BX) complex manifolds in monolayer MoSe2 with intentionally created monoselenium vacancies (VSe) using proton beam irradiation. The emission intensity of different BX peaks is found to exhibit contrasting dependence on electrostatic doping near the onset of free electron injection. The observed trend is consistent with the model in which free excitons exist in equilibrium with excitons bound to neutral and charged VSe defects, which act as deep acceptors. These complexes are more strongly bound than trions and biexcitons, surviving up to around 180 K, and exhibit moderate valley polarization memory, indicating partial free exciton character.
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