Elucidating Piezoelectricity and Strain in Monolayer MoS2 at the Nanoscale Using Kelvin Probe Force MicroscopyClick to copy article linkArticle link copied!
- Alex C. De PalmaAlex C. De PalmaMaterials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United StatesMore by Alex C. De Palma
- Xinyue PengXinyue PengDepartment of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United StatesMore by Xinyue Peng
- Saba ArashSaba ArashDepartment of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United StatesMore by Saba Arash
- Frank Y. GaoFrank Y. GaoDepartment of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United StatesMore by Frank Y. Gao
- Edoardo BaldiniEdoardo BaldiniDepartment of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United StatesMore by Edoardo Baldini
- Xiaoqin LiXiaoqin LiDepartment of Physics and Center for Complex Quantum Systems, University of Texas at Austin, Austin, Texas 78712, United StatesMore by Xiaoqin Li
- Edward T. Yu*Edward T. Yu*Email: [email protected]Materials Science and Engineering Program, Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712, United StatesMicroelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78758, United StatesMore by Edward T. Yu
Abstract
Strain engineering modifies the optical and electronic properties of atomically thin transition metal dichalcogenides. Highly inhomogeneous strain distributions in two-dimensional materials can be easily realized, enabling control of properties on the nanoscale; however, methods for probing strain on the nanoscale remain challenging. In this work, we characterize inhomogeneously strained monolayer MoS2 via Kelvin probe force microscopy and electrostatic gating, isolating the contributions of strain from other electrostatic effects and enabling the measurement of all components of the two-dimensional strain tensor on length scales less than 100 nm. The combination of these methods is used to calculate the spatial distribution of the electrostatic potential resulting from piezoelectricity, presenting a powerful way to characterize inhomogeneous strain and piezoelectricity that can be extended toward a variety of 2D materials.
Cited By
This article is cited by 2 publications.
- Sheng Han, Jiong Liu, Ana I. Pérez-Jiménez, Zhou Lei, Pei Yan, Yu Zhang, Xiangyu Guo, Rongxu Bai, Shen Hu, Xuefeng Wu, David W. Zhang, Qingqing Sun, Deji Akinwande, Edward T. Yu, Li Ji. Visualizing and Controlling of Photogenerated Electron–Hole Pair Separation in Monolayer WS2 Nanobubbles under Piezoelectric Field. ACS Applied Materials & Interfaces 2024, 16
(28)
, 36735-36744. https://doi.org/10.1021/acsami.4c00092
- Claire M. Ganski, Alex C. De Palma, Edward T. Yu. Enhanced Electromechanical Response Due to Inhomogeneous Strain in Monolayer MoS2. Nano Letters 2024, 24
(26)
, 7903-7910. https://doi.org/10.1021/acs.nanolett.4c01126
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