Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETsClick to copy article linkArticle link copied!
- Sang Sub HanSang Sub HanNanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United StatesMore by Sang Sub Han
- Shahid SattarShahid SattarDepartment of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, SwedenMore by Shahid Sattar
- Dmitry KireevDmitry KireevDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesDepartment of Biomedical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United StatesMore by Dmitry Kireev
- June-Chul ShinJune-Chul ShinNanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United StatesDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of KoreaMore by June-Chul Shin
- Tae-Sung BaeTae-Sung BaeCenter for Research Equipment, Korea Basic Science Institute, Daejeon 34133, Republic of KoreaMore by Tae-Sung Bae
- Hyeon Ih RyuHyeon Ih RyuAnalytical Research Division, Korea Basic Science Institute, Jeonju 54907, Republic of KoreaMore by Hyeon Ih Ryu
- Justin CaoJustin CaoDepartment of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United StatesMore by Justin Cao
- Alex Ka ShumAlex Ka ShumDepartment of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida 32826, United StatesMore by Alex Ka Shum
- Jung Han KimJung Han KimDepartment of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of KoreaMore by Jung Han Kim
- Carlo Maria CanaliCarlo Maria CanaliDepartment of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, SwedenMore by Carlo Maria Canali
- Deji AkinwandeDeji AkinwandeDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United StatesMicroelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United StatesMore by Deji Akinwande
- Gwan-Hyoung LeeGwan-Hyoung LeeDepartment of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of KoreaMore by Gwan-Hyoung Lee
- Hee-Suk Chung*Hee-Suk Chung*Email: [email protected]Electron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon 34133, Republic of KoreaMore by Hee-Suk Chung
- Yeonwoong Jung*Yeonwoong Jung*Email: [email protected]NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United StatesDepartment of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United StatesMore by Yeonwoong Jung
Abstract

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of ∼50.30 cm2 V–1 s–1 at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.
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This article is cited by 7 publications.
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