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Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs
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    Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs
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    • Sang Sub Han
      Sang Sub Han
      NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
      More by Sang Sub Han
    • Shahid Sattar
      Shahid Sattar
      Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden
    • Dmitry Kireev
      Dmitry Kireev
      Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
      Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
      Department of Biomedical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
    • June-Chul Shin
      June-Chul Shin
      NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
      Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
    • Tae-Sung Bae
      Tae-Sung Bae
      Center for Research Equipment, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
      More by Tae-Sung Bae
    • Hyeon Ih Ryu
      Hyeon Ih Ryu
      Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, Republic of Korea
      More by Hyeon Ih Ryu
    • Justin Cao
      Justin Cao
      Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States
      More by Justin Cao
    • Alex Ka Shum
      Alex Ka Shum
      Department of Mechanical and Aerospace Engineering, University of Central Florida, Orlando, Florida 32826, United States
      More by Alex Ka Shum
    • Jung Han Kim
      Jung Han Kim
      Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea
      More by Jung Han Kim
    • Carlo Maria Canali
      Carlo Maria Canali
      Department of Physics and Electrical Engineering, Linnaeus University, Kalmar SE-39231, Sweden
    • Deji Akinwande
      Deji Akinwande
      Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, United States
      Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
    • Gwan-Hyoung Lee
      Gwan-Hyoung Lee
      Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
    • Hee-Suk Chung*
      Hee-Suk Chung
      Electron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
      *Email: [email protected]
    • Yeonwoong Jung*
      Yeonwoong Jung
      NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
      Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States
      *Email: [email protected]
    Other Access OptionsSupporting Information (1)

    Nano Letters

    Cite this: Nano Lett. 2024, 24, 6, 1891–1900
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.3c03666
    Published December 27, 2023
    Copyright © 2023 American Chemical Society

    Abstract

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    Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of ∼50.30 cm2 V–1 s–1 at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.

    Copyright © 2023 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.3c03666.

    • Experimental section, STEM images and grain boundary analysis, electrical characteristics of 2D PtTe2 layers presenting metallic transports, EDS spectra obtained from 2D PtSe2 layers and 2D t-PtTe2 layers, cross-sectional EDS mapping images, plot of FET performance comparison, total resistance slopes as a function of FET channel lengths for edge- and surface-contacted FETs, and details of TLM for the contact resistance extraction (PDF)

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    Cited By

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    This article is cited by 7 publications.

    1. Seokjin Ko, Dongryul Lee, Jeongmin Kim, Chang-Koo Kim, Jihyun Kim. Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors. ACS Nano 2024, 18 (36) , 25009-25017. https://doi.org/10.1021/acsnano.4c06159
    2. Sang Sub Han, June-Chul Shin, Alireza Ghanipour, Ji-Hyun Lee, Sang-Gil Lee, Jung Han Kim, Hee-Suk Chung, Gwan-Hyoung Lee, Yeonwoong Jung. High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers. ACS Applied Materials & Interfaces 2024, 16 (28) , 36599-36608. https://doi.org/10.1021/acsami.4c06540
    3. M. Awais Aslam, Simon Leitner, Shubham Tyagi, Alexandros Provias, Vadym Tkachuk, Egon Pavlica, Martina Dienstleder, Daniel Knez, Kenji Watanabe, Takashi Taniguchi, Dayu Yan, Youguo Shi, Theresia Knobloch, Michael Waltl, Udo Schwingenschlögl, Tibor Grasser, Aleksandar Matković. All van der Waals Semiconducting PtSe2 Field Effect Transistors with Low Contact Resistance Graphite Electrodes. Nano Letters 2024, 24 (22) , 6529-6537. https://doi.org/10.1021/acs.nanolett.4c00956
    4. Sang Sub Han, Chung Won Lee, Changhyeon Yoo, Sang-Gil Lee, Tae-Sung Bae, Jung Han Kim, Hee-Suk Chung, Yeonwoong Jung. Wafer-scale flexible 2D PtSe2 layers with bi-directional wavelength tunability for fully optical synaptic operations. Nano Energy 2025, 139 , 110943. https://doi.org/10.1016/j.nanoen.2025.110943
    5. Xinyi Guan, Yu Chen, Yuhang Ma, Huanrong Liang, Zhaoqiang Zheng, Churong Ma, Chun Du, Jiandong Yao, Guowei Yang. New paradigms of 2D layered material self-driven photodetectors. Nanoscale 2024, 16 (45) , 20811-20841. https://doi.org/10.1039/D4NR03543G
    6. Jingyi Liang, Wen Huang, Zimei Zhang, Xin Li, Pin Lu, Wei Li, Miaomiao Liu, Ying Huangfu, Rong Song, Ruixia Wu, Bo Li, Zhang Lin, Liyuan Chai, Xidong Duan, Jia Li. Laser Patterning for 2D Lateral and Vertical VS 2 /MoS 2 Metal/Semiconducting Heterostructures. Advanced Functional Materials 2024, 34 (45) https://doi.org/10.1002/adfm.202407636
    7. Hao Qiu, Zhihao Yu, Tiange Zhao, Qi Zhang, Mingsheng Xu, Peifeng Li, Taotao Li, Wenzhong Bao, Yang Chai, Shula Chen, Yiqi Chen, Hui-Ming Cheng, Daoxin Dai, Zengfeng Di, Zhuo Dong, Xidong Duan, Yuhan Feng, Yu Fu, Jingshu Guo, Pengwen Guo, Yue Hao, Jun He, Xiao He, Jingyi Hu, Weida Hu, Zehua Hu, Xinyue Huang, Ziyang Huang, Ali Imran, Ziqiang Kong, Jia Li, Qian Li, Weisheng Li, Lei Liao, Bilu Liu, Can Liu, Chunsen Liu, Guanyu Liu, Kaihui Liu, Liwei Liu, Sheng Liu, Yuan Liu, Donglin Lu, Likuan Ma, Feng Miao, Zhenhua Ni, Jing Ning, Anlian Pan, Tian-Ling Ren, Haowen Shu, Litao Sun, Yue Sun, Quanyang Tao, Zi-Ao Tian, Dong Wang, Hao Wang, Haomin Wang, Jialong Wang, Junyong Wang, Wenhui Wang, Xingjun Wang, Yeliang Wang, Yuwei Wang, Zhenyu Wang, Yao Wen, Haidi Wu, Hongzhao Wu, Jiangbin Wu, Yanqing Wu, Longfei Xia, Baixu Xiang, Luwen Xing, Qihua Xiong, Xiong Xiong, Jeffrey Xu, Tao Xu, Yang Xu, Liu Yang, Yi Yang, Yuekun Yang, Lei Ye, Yu Ye, Bin Yu, Ting Yu, Hui Zeng, Guangyu Zhang, Hongyun Zhang, Jincheng Zhang, Kai Zhang, Tao Zhang, Xinbo Zhang, Yanfeng Zhang, Chunsong Zhao, Yuda Zhao, Ting Zheng, Peng Zhou, Shuyun Zhou, Yuxuan Zhu, Deren Yang, Yi Shi, Han Wang, Xinran Wang. Two-dimensional materials for future information technology: status and prospects. Science China Information Sciences 2024, 67 (6) https://doi.org/10.1007/s11432-024-4033-8

    Nano Letters

    Cite this: Nano Lett. 2024, 24, 6, 1891–1900
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.3c03666
    Published December 27, 2023
    Copyright © 2023 American Chemical Society

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