Room-Temperature, Low-Barrier Boron Doping of Graphene
- Lida Pan
- Yande Que
- Hui Chen
- Dongfei Wang
- Jun Li
- Chengmin Shen
- Wende Xiao
- Shixuan Du
- Hongjun Gao
- Sokrates T. Pantelides
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† Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
‡ Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
§ Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States
∥ Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
*E-mail: [email protected] (S.D.).
*E-mail: [email protected] (S.T.P.).
Abstract
Doping graphene with boron has been difficult because of high reaction barriers. Here, we describe a low-energy reaction route derived from first-principles calculations and validated by experiments. We find that a boron atom on graphene on a ruthenium(0001) substrate can replace a carbon by pushing it through, with substrate attraction helping to reduce the barrier to only 0.1 eV, implying that the doping can take place at room temperature. High-quality graphene is grown on a Ru(0001) surface and exposed to B2H6. Scanning tunneling microscopy/spectroscopy and X-ray photoelectron spectroscopy confirmed that boron is indeed incorporated substitutionally without disturbing the graphene lattice.
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