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Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2016, 16, 3, 1754-1759
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    Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film
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    † ‡ †IBS Center for Integrated Nanostructure Physics, Institute for Basic Science, ‡Department of Energy Science, and §Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea
    *E-mail: [email protected]
    *E-mail: [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2016, 16, 3, 1754–1759
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    https://doi.org/10.1021/acs.nanolett.5b04748
    Published February 8, 2016
    Copyright © 2016 American Chemical Society
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    Abstract

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    Electrical transport in monolayer graphene on SrTiO3 (STO) thin film is examined in order to promote gate-voltage scaling using a high-k dielectric material. The atomically flat surface of thin STO layer epitaxially grown on Nb-doped STO single-crystal substrate offers good adhesion between the high-k film and graphene, resulting in nonhysteretic conductance as a function of gate voltage at all temperatures down to 2 K. The two-terminal conductance quantization under magnetic fields corresponding to quantum Hall states survives up to 200 K at a magnetic field of 14 T. In addition, the substantial shift of charge neutrality point in graphene seems to correlate with the temperature-dependent dielectric constant of the STO thin film, and its effective dielectric properties could be deduced from the universality of quantum phenomena in graphene. Our experimental data prove that the operating voltage reduction can be successfully realized due to the underlying high-k STO thin film, without any noticeable degradation of graphene device performance.

    Copyright © 2016 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b04748.

    • Estimation of contact resistance from two-terminal quantum Hall conductance; estimation of the effective dielectric constant of STO from two-terminal quantum Hall conductance and its temperature dependence; leakage current pathway of the graphene device on STO thin film.=; carrier-density-dependent conductance of graphene; comparison of this work with other literature (PDF)

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    Cited By

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    This article is cited by 15 publications.

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    Nano Letters

    Cite this: Nano Lett. 2016, 16, 3, 1754–1759
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.5b04748
    Published February 8, 2016
    Copyright © 2016 American Chemical Society
    Request reuse permissions

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