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    Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
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    † JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany
    ‡ Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
    § National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
    *E-mail: [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2016, 16, 2, 1387–1391
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    https://doi.org/10.1021/acs.nanolett.5b04840
    Published January 13, 2016
    Copyright © 2016 American Chemical Society
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    Abstract

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    We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

    Copyright © 2016 American Chemical Society

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    Cite this: Nano Lett. 2016, 16, 2, 1387–1391
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    https://doi.org/10.1021/acs.nanolett.5b04840
    Published January 13, 2016
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