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Large-Gap Magnetic Topological Heterostructure Formed by Subsurface Incorporation of a Ferromagnetic Layer

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    Large-Gap Magnetic Topological Heterostructure Formed by Subsurface Incorporation of a Ferromagnetic Layer
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    † Department of Physics, Tokyo Institute of Technology, Tokyo 152-8551, Japan
    ‡ Institute of Strength Physics and Materials Science, Tomsk 634055, Russia
    Tomsk State University, Tomsk 634050, Russia
    § Saint Petersburg State University, Saint Petersburg 198504, Russia
    ∥ Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal, 4, 20018 San Sebastián/Donostia, Basque Country, Spain
    ⊥ Institute for Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan
    # Department of Physics, University of Tokyo, Tokyo 113-0033, Japan
    ○ UVSOR Facility, Institute for Molecular Science, Okazaki 444-8585, Japan
    △ Graduate School of Science, Hiroshima University, Higashi-Hiroshima 739-8526, Japan
    ∇ Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-8526, Japan
    ◆ Department of Materials Molecular Science, Institute for Molecular Science, Okazaki 444-8585, Japan
    ▲ Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, Apdo. 1072, 20080 San Sebastián, Basque Country, Spain
    □ Centro de Física de Materiales, CFM-MPC, Centro Mixto CSIC-UPV/EHU, Apdo.1072, 20080 San Sebastián/Donostia, Basque Country, Spain
    *E-mail: [email protected]. Phone: +81 (0)3 5734 2365. Fax: +81 (0)3 5734 2365.
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    Nano Letters

    Cite this: Nano Lett. 2017, 17, 6, 3493–3500
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    https://doi.org/10.1021/acs.nanolett.7b00560
    Published May 26, 2017
    Copyright © 2017 American Chemical Society
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    Abstract

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    Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4/Bi2Se3 heterostructure, which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the codeposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4/Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac cone gap opening of ∼100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = −1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for developing future “topotronics” devices.

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    Cite this: Nano Lett. 2017, 17, 6, 3493–3500
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    https://doi.org/10.1021/acs.nanolett.7b00560
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