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Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2018, 18, 8, 4861-4865
    Letter

    Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium
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    Nano Letters

    Cite this: Nano Lett. 2018, 18, 8, 4861–4865
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    https://doi.org/10.1021/acs.nanolett.8b01457
    Published July 11, 2018
    Copyright © 2018 American Chemical Society
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    Abstract

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    We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors with absolute values below 1 in the quantum-well plane, and exceeding 10 out-of-plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, which is in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step toward the realization of novel devices for applications in quantum spintronics.

    Copyright © 2018 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.8b01457.

    • Additional experimental data from a gated Hall-bar device, providing information on the transport properties of the two-dimensional hole gas. Additional data from another 1D-wire device (D3). Description of the procedure to extract energy spacings in a 1D channel (PDF)

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    Cited By

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    This article is cited by 24 publications.

    1. Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz, Xuhai Huang, Susheng Tan, Romain Maurand, Sergey Frolov, Amir Sammak, Giordano Scappucci, Francois Lefloch, Silvano De Franceschi. Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers. Nano Letters 2019, 19 (2) , 1023-1027. https://doi.org/10.1021/acs.nanolett.8b04275
    2. Han Gao, Zhen-Zhen Kong, Po Zhang, Yi Luo, Haitian Su, Xiao-Fei Liu, Gui-Lei Wang, Ji-Yin Wang, H. Q. Xu. Gate-defined quantum point contacts in a germanium quantum well. Nanoscale 2024, 16 (21) , 10333-10339. https://doi.org/10.1039/D4NR00712C
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    4. Zhanning Wang, Abhikbrata Sarkar, S. D. Liles, Andre Saraiva, A. S. Dzurak, A. R. Hamilton, Dimitrie Culcer. Electrical operation of hole spin qubits in planar MOS silicon quantum dots. Physical Review B 2024, 109 (7) https://doi.org/10.1103/PhysRevB.109.075427
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    11. M. Lodari, O. Kong, M. Rendell, A. Tosato, A. Sammak, M. Veldhorst, A. R. Hamilton, G. Scappucci. Lightly strained germanium quantum wells with hole mobility exceeding one million. Applied Physics Letters 2022, 120 (12) https://doi.org/10.1063/5.0083161
    12. Zhanning Wang, Elizabeth Marcellina, Alex. R. Hamilton, James H. Cullen, Sven Rogge, Joe Salfi, Dimitrie Culcer. Optimal operation points for ultrafast, highly coherent Ge hole spin-orbit qubits. npj Quantum Information 2021, 7 (1) https://doi.org/10.1038/s41534-021-00386-2
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    14. N. W. Hendrickx, W. I. L. Lawrie, L. Petit, A. Sammak, G. Scappucci, M. Veldhorst. A single-hole spin qubit. Nature Communications 2020, 11 (1) https://doi.org/10.1038/s41467-020-17211-7
    15. Y. Gul, M. Myronov, S.N. Holmes, M. Pepper. Activated and Metallic Conduction in p -Type Modulation-Doped Ge - Sn Devices. Physical Review Applied 2020, 14 (5) https://doi.org/10.1103/PhysRevApplied.14.054064
    16. Florian Stäbler, Alexei M. Tsvelik, Oleg M. Yevtushenko. Protected helical transport in magnetically doped quantum wires: Beyond the one-dimensional paradigm. Physical Review B 2020, 102 (16) https://doi.org/10.1103/PhysRevB.102.161102
    17. P. Del Vecchio, M. Lodari, A. Sammak, G. Scappucci, O. Moutanabbir. Vanishing Zeeman energy in a two-dimensional hole gas. Physical Review B 2020, 102 (11) https://doi.org/10.1103/PhysRevB.102.115304
    18. A M Tsvelik, O M Yevtushenko. Transport in magnetically doped one-dimensional wires: can the helical protection emerge without the global helicity?. New Journal of Physics 2020, 22 (5) , 053013. https://doi.org/10.1088/1367-2630/ab82bb
    19. A. M. Tsvelik, O. M. Yevtushenko. Physics of arbitrarily doped Kondo lattices: From a commensurate insulator to a heavy Luttinger liquid and a protected helical metal. Physical Review B 2019, 100 (16) https://doi.org/10.1103/PhysRevB.100.165110
    20. Will J Hardy, C Thomas Harris, Yi-Hsin Su, Yen Chuang, Jonathan Moussa, Leon N Maurer, Jiun-Yun Li, Tzu-Ming Lu, Dwight R Luhman. Single and double hole quantum dots in strained Ge/SiGe quantum wells. Nanotechnology 2019, 30 (21) , 215202. https://doi.org/10.1088/1361-6528/ab061e
    21. Amir Sammak, Diego Sabbagh, Nico W. Hendrickx, Mario Lodari, Brian Paquelet Wuetz, Alberto Tosato, LaReine Yeoh, Monica Bollani, Michele Virgilio, Markus Andreas Schubert, Peter Zaumseil, Giovanni Capellini, Menno Veldhorst, Giordano Scappucci. Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology. Advanced Functional Materials 2019, 29 (14) https://doi.org/10.1002/adfm.201807613
    22. Fang Wang, Dengji Yu, Jun Dai. Photoelectrochemical characteristics of ZnO/ TiO2 nanoheterojunctions. AIP Advances 2019, 9 (3) https://doi.org/10.1063/1.5090306
    23. N. W. Hendrickx, M. L. V. Tagliaferri, M. Kouwenhoven, R. Li, D. P. Franke, A. Sammak, A. Brinkman, G. Scappucci, M. Veldhorst. Ballistic supercurrent discretization and micrometer-long Josephson coupling in germanium. Physical Review B 2019, 99 (7) https://doi.org/10.1103/PhysRevB.99.075435
    24. Hiske Overweg, Angelika Knothe, Thomas Fabian, Lukas Linhart, Peter Rickhaus, Lucien Wernli, Kenji Watanabe, Takashi Taniguchi, David Sánchez, Joachim Burgdörfer, Florian Libisch, Vladimir I. Fal’ko, Klaus Ensslin, Thomas Ihn. Topologically Nontrivial Valley States in Bilayer Graphene Quantum Point Contacts. Physical Review Letters 2018, 121 (25) https://doi.org/10.1103/PhysRevLett.121.257702
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    Nano Letters

    Cite this: Nano Lett. 2018, 18, 8, 4861–4865
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.8b01457
    Published July 11, 2018
    Copyright © 2018 American Chemical Society
    Request reuse permissions

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