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Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2018, 18, 8, 4878-4884
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    Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts
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    • Min-Hyun Lee
      Min-Hyun Lee
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
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    • Yeonchoo Cho
      Yeonchoo Cho
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
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    • Kyung-Eun Byun
      Kyung-Eun Byun
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
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    • Keun Wook Shin
      Keun Wook Shin
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
      More by Keun Wook Shin
    • Seong-Geol Nam
      Seong-Geol Nam
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
      More by Seong-Geol Nam
    • Changhyun Kim
      Changhyun Kim
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
      More by Changhyun Kim
    • Haeryong Kim
      Haeryong Kim
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
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    • Sang-A Han
      Sang-A Han
      School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea
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    • Sang-Woo Kim
      Sang-Woo Kim
      School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 440-746, Republic of Korea
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      Orcidhttp://orcid.org/0000-0002-0079-5806
    • Hyeon-Jin Shin*
      Hyeon-Jin Shin
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
      *E-mail: [email protected]
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      Orcidhttp://orcid.org/0000-0002-6992-6341
    • Seongjun Park
      Seongjun Park
      Samsung Advanced Institute of Technology, Suwon 443-803, Republic of Korea
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    Nano Letters

    Cite this: Nano Lett. 2018, 18, 8, 4878–4884
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    https://doi.org/10.1021/acs.nanolett.8b01509
    Published July 23, 2018
    Copyright © 2018 American Chemical Society
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    Abstract

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    Metal–semiconductor junctions are indispensable in semiconductor devices, but they have recently become a major limiting factor precluding device performance improvement. Here, we report the modification of a metal/n-type Si Schottky contact barrier by the introduction of two-dimensional (2D) materials of either graphene or hexagonal boron nitride (h-BN) at the interface. We realized the lowest specific contact resistivities (ρc) of 3.30 nΩ cm2 (lightly doped n-type Si, ∼ 1015/cm3) and 1.47 nΩ cm2 (heavily doped n-type Si, ∼ 1021/cm3) via 2D material insertion are approaching the theoretical limit of 1.3 nΩ cm2. We demonstrated the role of the 2D materials at the interface in achieving a low ρc value by the following mechanisms: (a) 2D materials effectively form dipoles at the metal–2D material (M/2D) interface, thereby reducing the metal work function and changing the pinning point, and (b) the fully metalized M/2D system shifts the pinning point toward the Si conduction band, thus decreasing the Schottky barrier. As a result, the fully metalized M/2D system using atomically thin and well-defined 2D materials shows a significantly reduced ρc. The proposed 2D material insertion technique can be used to obtain extremely low contact resistivities in metal/n-type Si systems and will help to achieve major performance improvements in semiconductor technologies.

    Copyright © 2018 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.8b01509.

    • Experimental details of fabrication, measurement methods for specific contact resistivity, work function, and Schottky barrier height, analysis of multilayered graphene by transfer, and effect of a few-nanometer-thick native oxide in M/Si contact (PDF)

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    Nano Letters

    Cite this: Nano Lett. 2018, 18, 8, 4878–4884
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.8b01509
    Published July 23, 2018
    Copyright © 2018 American Chemical Society
    Request reuse permissions

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