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Crystalline, Phononic, and Electronic Properties of Heterostructured Polytypic Ge Nanowires by Raman Spectroscopy

  • Claudia Fasolato*
    Claudia Fasolato
    Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
    *E-mail: [email protected]
  • Marta De Luca
    Marta De Luca
    Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
  • Doriane Djomani
    Doriane Djomani
    Centre de Nanosciences et Nanotechnologies (C2N), CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât 220, rue André Ampère, Centre scientifique d’Orsay, F91405 Orsay cedex, France
  • Laetitia Vincent
    Laetitia Vincent
    Centre de Nanosciences et Nanotechnologies (C2N), CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât 220, rue André Ampère, Centre scientifique d’Orsay, F91405 Orsay cedex, France
  • Charles Renard
    Charles Renard
    Centre de Nanosciences et Nanotechnologies (C2N), CNRS, Univ. Paris-Sud, Université Paris-Saclay, Bât 220, rue André Ampère, Centre scientifique d’Orsay, F91405 Orsay cedex, France
  • Giulia Di Iorio
    Giulia Di Iorio
    Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
  • Vincent Paillard
    Vincent Paillard
    CEMES, University of Toulouse, CNRS, 31055 Toulouse, France
  • Michele Amato
    Michele Amato
    Laboratoire de Physique des Solides (LPS), CNRS, Univ. Paris-Sud, Université Paris-Saclay, Centre scientifique d’Orsay, F-91405 Orsay cedex, France
  • Riccardo Rurali
    Riccardo Rurali
    Institut de Ciència de Materials de Barcelona (ICMAB−CSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona, Spain
  • , and 
  • Ilaria Zardo*
    Ilaria Zardo
    Departement Physik, Universität Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
    *E-mail: [email protected]
    More by Ilaria Zardo
Cite this: Nano Lett. 2018, 18, 11, 7075–7084
Publication Date (Web):September 5, 2018
https://doi.org/10.1021/acs.nanolett.8b03073
Copyright © 2018 American Chemical Society

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    Abstract

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    Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different crystal phases in a nanostructure, which enables the formation of polytypic heterostructures where the material composition is unchanged. This characteristic boosts the potential of polytypic heterostructured NWs for optoelectronic and phononic applications. In this work, we investigate cubic Ge NWs where small (∼20 nm) hexagonal domains are formed due to a strain-induced phase transformation. By combining a nondestructive optical technique (Raman spectroscopy) with density-functional theory (DFT) calculations, we assess the phonon properties of hexagonal Ge, determine the crystal phase variations along the NW axis, and, quite remarkably, reconstruct the relative orientation of the two polytypes. Moreover, we provide information on the electronic band alignment of the heterostructure at points of the Brillouin zone different from the one (Γ) where the direct band gap recombination in hexagonal Ge takes place. We demonstrate the versatility of Raman spectroscopy and show that it can be used to determine the main crystalline, phononic, and electronic properties of the most challenging type of heterostructure (a polytypic, nanoscale heterostructure with constant material composition). The general procedure that we establish can be applied to several types of heterostructures.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.8b03073.

    • Detailed description of the calculations of Raman selection rules and Raman spectroscopy analysis and computational methods presented in detail (PDF)

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