Memristive Device Characteristics Engineering by Controlling the Crystallinity of Switching Layer Materials
- Hao YangHao YangMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Hao Yang
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- Buyun ChenBuyun ChenMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Buyun Chen
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- Boxiang SongBoxiang SongMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Boxiang Song
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- Deming MengDeming MengMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Deming Meng
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- Subodh TiwariSubodh TiwariCollaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United StatesMore by Subodh Tiwari
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- Aravind KrishnamoorthyAravind KrishnamoorthyCollaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United StatesMore by Aravind Krishnamoorthy
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- Xiaodong YanXiaodong YanMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Xiaodong Yan
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- Zerui LiuZerui LiuMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Zerui Liu
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- Yunxiang WangYunxiang WangMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Yunxiang Wang
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- Pan HuPan HuMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Pan Hu
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- Tse-Hsien OuTse-Hsien OuMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Tse-Hsien Ou
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- Paulo BranicioPaulo BranicioCollaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United StatesMore by Paulo Branicio
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- Rajiv KaliaRajiv KaliaCollaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United StatesMore by Rajiv Kalia
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- Aiichiro NakanoAiichiro NakanoCollaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United StatesMore by Aiichiro Nakano
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- Priya VashishtaPriya VashishtaCollaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, California 90089, United StatesMore by Priya Vashishta
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- Fanxin LiuFanxin LiuCollaborative Innovation Center for Information Technology in Biological and Medical Physics, and College of Science, Zhejiang University of Technology, Hangzhou, Zhejiang 310023, ChinaMore by Fanxin Liu
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- Han WangHan WangMing Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Han Wang
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- Wei Wu*Wei Wu*Email: [email protected]Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United StatesMore by Wei Wu
Abstract
Memristive devices (i.e., memristors) can be highly beneficial in many emerging applications that may play important roles in the future generations of electronic systems, such as bio-inspired neuromorphic computing, high density nonvolatile memory, and field programmable gate arrays. Therefore, the memristor characteristics (such as operation voltage, on/off ratio, and the number of conductance states) must be engineered carefully for different applications. Here, we demonstrate a method to modify the memristor characteristics specifically by controlling the crystallinity of the switching layer material. Through setting the temperature of atomic layer deposition, the crystallinity of deposited Al2O3 can be controlled. Using different crystalline Al2O3 as the memristor switching layer, the characteristics of the corresponding Pt/Al2O3/Ta/Pt cross-point memristors can be modified precisely. The high I-V linearity, high on/off ratio (around 108), low pulse operation voltage (2.5 V), and multilevel conductance states (314 states) of the Pt/Al2O3/Ta/Pt cross-point memristor are demonstrated. More importantly, the mechanism behind this phenomenon is studied. This work deepens our understanding of the working mechanism of memristors and paves the way for using memristors in a broad spectrum of applications.
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